KEL semiconpuctor BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES * Complementary to BC638. B Cc rd <= MAXIMUM RATINGS (Ta=25C) | I l 1 N DIM | MILLIMETERS CHARACTERISTIC SYMBOL | RATING | UNIT K 1 { am uf A 4.70 MAX G B 4.80 MAX Collector-Base Voltage Vero 60 V D . . E 1.00 Collector-Emitter Voltage Vero 60 Vv F 1.27 G 0.85 Emitter-Base Voltage VeEBO 5 Vv elle_H 7 4001050 F F K 0.55 MAX Collector Current Te 500 mA L 2.30 M 0.45 MAX Collector Power Dissipation Po 625 mW | a oe o N 1.00 . , = 1. EMITTER Junction Temperature Tj 150 C 2. COLLECTOR 3. BASE Storage Temperature Tstg -55 ~ 150 Cc TO-92 ELECTRICAL CHARACTERISTICS (Ta=25'C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Tczo Vcs=30V, In=0 - - 100 nA Collector-Emitter * Vinpcro Ic=1l0mA, Ip=0 60 ~ - Vv Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain hrr Vcr=2V, Ic=150mA AO - 160 Vawcso Tc=100QHA, In=0 60 - - Vv V@e~weso Ie=10uA, Ic=0 5.0 - - Vv Collector-Emitter Saturation Voltage Vecusan Ic=500mA, I3=50mA - - 0.5 Vv Base-Emitter Voltage Var Vcr=2V, Ic=500mA - - 1.0 Vv Transition Frequency fr Vcr=2V, Ic=50mA, f=100MHz - 200 - MHz Input Capacitance Cip Ven=0.5V, Ic=0, f=lMHz - 50 - pF Collector Output Capacitance Cop Vcn=l0V, In=0, f=1MHz - 7.0 - pF * Pulse Test : Pulse Width<300uS, Duty Cycle 2.0% 2000. 10. 2 Revision No : 0 KEC 1/1