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AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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8 - 1
HMC479MP86 / 479MP86E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
v03.0810
General DescriptionFunctional Diagram
The HMC479MP86 & HMC479MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT ampli ers covering DC to 5 GHz. This
Micro-P packaged ampli er can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a LO
or PA driver with up to +21 dBm output power. The
HMC479MP86(E) offers 15 dB of gain with a +34 dBm
output IP3 at 850 MHz while requiring only 72 mA from
a single positive supply. The Darlington feedback pair
used results in reduced sensitivity to normal process
variations and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +34 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Included in the HMC-DK001 Designer’s Kit
Typical Applications
The HMC479MP86 / HMC479MP86E is an ideal RF/
IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Electrical Speci cations, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C
Note: Data taken with broadband bias tee on device output.
Parameter Min. Typ. Max. Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11.5
10.5
9
7. 5
14.5
13
12
11
9.5
dB
dB
dB
dB
dB
Gain Variation Over Temperature DC - 5 GHz 0.008 0.012 dB/ °C
Input Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
12
16
18
15
dB
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 3.5 GHz
3.5 - 5.0 GHz
18
25
15
dB
dB
dB
Reverse Isolation DC - 5 GHz 18 dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
16
13
11
9
18.5
17
14
12
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
34
32
28
25
dBm
dBm
dBm
dBm
Noise Figure DC - 2.0 GHz
2.0 - 5.0 GHz
4.0
4.8
dB
dB
Supply Current (Icq) 72 100 mA
Features