HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003. 11.28
Page No. : 1/4
HBT139XE HSMC Product Specification
HBT139XE
Three Quadrant Triac
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in
general purpose bidirectional switching and phase control applications,
where high sensitivity is requ ir ed in all four quadrants.
Quick Reference Data
Part No. VDRM(V) IT(RMS)(A) ITSM (A) Quadrant
HBT139DE 600 16 140 I - II - III
Pin Configur ation
Pin Description
1 Main terminal 1
2 Main terminal 2
3Gate
tab Main terminal 2
123
tab
Symbol
T2 T1
G
Limtiing Values
Symbol Parameter Min. Max. Units
VDRM Repetitive peak off-state voltages - 600 V
IT(RMS) RMS on-state current - 16 A
ITSM Non-repetitive peak on-state current - 140 A
I2tI
2t for fusing - 98 A2S
Repetitive rat e of rise of on-state current after triggering
T2+ G+ -50A/us
T2+ G- - 50 A/us
T2- G- - 50 A/us
dIT/dt
T2- G+ - - A/us
IGM Peak gate current - 2 A
VGM Peak gate voltage - 10 V
PGM Peak gate power - 5 W
PG(AV) Av erage gate power - 0.5 W
Tstg S torage Temperature Range - 150 °C
Tj Operating junction temperature -40 125 °C
TO-220AB
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003. 11.28
Page No. : 2/4
HBT139XE HSMC Product Specification
Static Characteristics (Ta=25°C)
Rank
Symbol Parameter Conditions VUnit
VD=6V, RL=10Ω, T2+ G+ 25 mA
VD=6V, RL=10Ω, T2+ G- 25 mA
VD=6V, RL=10Ω, T2- G- 25 mA
IGT Gate Trigger Current
VD=6V, RL=10Ω, T2- G+ -mA
VD=6V, RL=10Ω, T2+ G+ 20 mA
VD=6V, RL=10Ω, T2+ G- 30 mA
VD=6V, RL=10Ω, T2- G- 30 mA
ILLatching Current
VD=6V, RL=10Ω, T2- G+ -mA
IHHolding Current VD=12V, IGT=0.1A 30 mA
VTOn-state Voltage IT=25A 1.5 V
VD=6V, RL=10Ω, T2 + G+ 1.5 V
VD=6V, RL=10Ω, T2 + G- 1.5 V
VD=6V, RL=10Ω, T2 - G- 1.5 V
VGT Gate Tri gger Vol tage
VD=6V, RL=10Ω, T2 - G+ -V
IDOff-state Leakage Current VD=VDRM 500 uA
Static Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
dVD/dt Critical rate of rise of
off-state vo ltage
VDM=67% VDRM(max);
Tj= 125°C; exponential
waveform; gate open circuit -50-V/us
tgt Gate controlled turn-on
time ITM=6A; VD=VDRM(max);
IG=0.1A; dIG/dt=5A/us -2-us
Thermal Resistances
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth j-mb Thermal resistance junction to
mounting base
Rth j-a Thermal resistance junction to
ambient
Full cycle
Half cycle
In free air
-
-
-
-
-
60
1.2
1.7
-
K/W
K/W
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003. 11.28
Page No. : 3/4
HBT139XE HSMC Product Specification
Characteristics Curve
Ty pical & Mmax imum On -State Characteristic
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VT/V
IT/A
typ 25ºC 125ºC
N ormal ised G a t e Trigger Curr ent IGT(Ta)/ IG T(25
o
C),
Versus Junction Temperature Ta
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140
Ta(
o
C)
IGT/IGT(25
o
C)
T2+/G+
T2+/G-
T2-/G-
N ormal ised G a t e Trigger Voltag e VG T(Ta)/VGT(25
o
C),
Versus Junction Temperature Ta
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Ta(
o
C)
VGT/VGT(25
o
C)
T2+/G+ T2-/G-
N ormal ised Hol din g Curr ent IH ( Ta)/IH ( 25
o
C),
Versus Junc t ion T em peratur e Ta
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140
Ta/(
o
C)
IL/IL(25
o
C)
N ormal ised L at chin g Curren t IL(Ta) / IL(25
o
C),
Versus Junction Temperature Ta
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Ta(
o
C)
IL/IL(25
o
C)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003. 11.28
Page No. : 4/4
HBT139XE HSMC Product Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 All oy; solder pl ating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A B
E
G
IK
M
OP
3
2
1
C
N
H
D
Tab
Style: Pin 1. Main terminal 1
2. Main terminal 2
3. Gate
Tab connected to main terminal 2
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
H
1BT
39 Rank
Serial Code
