TPS16630RGET - TEXAS INSTRUMENTS

January, 2019 − Rev. 3

1Publication Order Number:

FCP190N65S3/D

FCP190N65S3

Power MOSFET, N-Channel,

SUPERFET) III, Easy Drive,

650 V, 17 A, 190 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provides superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

Features

•700 V @ TJ = 150°C

•Typ. RDS(on) = 159 mW

•Ultra Low Gate Charge (Typ. Qg = 33 nC)

•Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

•100% Avalanche Tested

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Computing / Display Power Supplies

•Telecom / Server Power Supplies

•Industrial Power Supplies

•Lighting / Charger / Adapter

TO−220

CASE 340AT

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FCP190N65S3 = Specific Device Code

MARKING DIAGRAM

VDSS RDS(ON) MAX ID MAX

650 V 190 mW @ 10 V 17 A

POWER MOSFET

$Y&Z&3&K

FCP

190N65S3

FCP190N65S3

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

VGSS Gate to Source Voltage − DC ±30 V

− AC (f > 1 Hz) ±30

IDDrain Current − Continuous (TC = 25°C) 17 A

− Continuous (TC = 100°C) 11

IDM Drain Current − Pulsed (Note 1) 42.5 A

EAS Single Pulsed Avalanche Energy (Note 2) 76 mJ

IAS Avalanche Current (Note 2) 2.5 A

EAR Repetitive Avalanche Energy (Note 1) 1.44 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PDPower Dissipation (TC = 25°C) 144 W

− Derate Above 25°C 1.15 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. IAS = 2.5 A, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 8.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

RqJC Thermal Resistance, Junction to Case, Max. 0.87 _C/W

RqJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FCP190N65S3 FCP190N65S3 TO−220 Tube N/A N/A 50 Units

FCP190N65S3

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage VGS =0V, I

D= 1 mA, TJ=25_C650 V

VGS =0V, I

D= 1 mA, TJ= 150_C700 V

DBVDSS / DTJBreakdown Voltage Temperature

Coefficient

ID= 1 mA, Referenced to 25_C0.6 V/_C

IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V 1mA

VDS = 520 V, TC= 125_C0.89

IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V ±100 nA

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage VGS =V

DS, ID= 1.7 mA 2.5 4.5 V

RDS(on) Static Drain to Source On Resistance VGS =10V, I

D= 8.5 A 159 190 mW

gFS Forward Transconductance VDS =20V, I

D= 8.5 A 10 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz 1350 pF

Coss Output Capacitance 30 pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V 300 pF

Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V 43 pF

Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID= 8.5 A, VGS =10V

(Note 4)

33 nC

Qgs Gate to Source Gate Charge 7.9 nC

Qgd Gate to Drain “Miller” Charge 14 nC

ESR Equivalent Series Resistance f = 1 MHz 7W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD = 400 V, ID= 8.5 A, VGS =10V,

Rg= 4.7 W

(Note 4)

20 ns

trTurn-On Rise Time 22 ns

td(off) Turn-Off Delay Time 57 ns

tfTurn-Off Fall Time 16 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

ISMaximum Continuous Source to Drain Diode Forward Current 17 A

ISM Maximum Pulsed Source to Drain Diode Forward Current 42.5 A

VSD Source to Drain Diode Forward Voltage VGS = 0V, I

SD = 8.5 A 1.2 V

trr Reverse Recovery Time VDD = 400 V, ISD = 8.5 A,

dIF/dt = 100 A/ms

313 ns

Qrr Reverse Recovery Charge 4.9 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

FCP190N65S3

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

467

VGS, Gate−Source Voltage (V)

ID, Drain Current (A)

00.0 1.0 1.5

ID, Drain Current (A)

RDS(ON), Drain−Source

On−Resistance (W)

VSD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A)

VDS, Drain−Source Voltage (V)

Capacitances (pF)

Qg, Total Gate Charge (nC)

VGS, Gate−Source Voltage (V)

0.1 1 10

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, Drain−Source Voltage (V)

ID, Drain Current (A)

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3010

0.1

100

1000

10000

100000

0.1 1 10 100 1000 10 15 20

0.5

25 30 35

0.1

0.001

0.01

0.1

100 VGS = 0 V

250 ms Pulse Test

25°C

150°C

−55°C

250 ms Pulse Test

TC = 25°C

VGS = 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VDS = 20 V

250 ms Pulse Test

25°C

−55°C

150°C

0.0

0.2

0.4

0.6 TC = 25°C

VGS = 10 V

VGS = 20 V

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Coss

VGS = 0 V

f = 1 MHz

Ciss

Crss

ID = 8.5 A

VDS = 130 V

VDS = 400 V

FCP190N65S3

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

1 10 100 1000

0.01

0.1

100

VDS, Drain−Source Voltage (V)

ID, Drain Current (A)

TC, Case Temperature (5C)

ID, Drain Current (A)

50 75 100 125 150

VDS, Drain to Source Voltage (V)

EOSS, (mJ)

130 260 520 6500

−50

0.8

0.9

1.0

1.1

1.2

0.0

0.5

1.0

1.5

2.0

2.5

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On−Resistance Variation

vs. Temperature

TJ, Junction Temperature (5C)

BVDSS, Drain−Source

Breakdown Voltage (Normalized)

050 100 150

TJ, Junction Temperature (5C)

RDS(on), Drain−Source

On−Resistance (Normalized)

−50 0 50 100 150

3.0

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. EOSS vs. Drain to Source Voltage

390

VGS = 0 V

ID = 10 mA

VGS = 10 V

ID = 8.5 A

TC = 25°C

TJ = 150°C

Single Pulse

Operation in this Area

is Limited by RDS(on)

100 ms

1 ms

30 ms

10 ms

FCP190N65S3

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

t, Rectangular Pulse Duration (sec)

r(t), Normalized Effective Transient

Thermal Resistance

Figure 12. Transient Thermal Response Curve

0.001

0.01

0.1

10−510−410−310−210−1100101

ZqJC(t) = r(t) x RqJC

RqJC = 0.87°C/W

Peak TJ = PDM x ZqJC(t) + TC

Duty Cycle, D = t1 / t2

D = 0.5

0.2

0.1

0.05

0.02

0.01

DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

PDM

FCP190N65S3

www.onsemi.com

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

VGS

DUT

VDD

VDS

VGS

10%

90%

10%

90% 90%

ton toff

trtf

td(on) td(off)

Qgd

Qgs

VGS

Charge

VDS

VGS

DUT

IG = Const.

VDD

VDS

DUT

VGS

VDD

Time

IAS

BVDSS

ID(t)

VDS(t)

EAS +1

@LIAS

FCP190N65S3

www.onsemi.com

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDD

ISD

VDS

−

VGS

Same Type

as DUT

− dv/dt controlled by RG

− ISD controlled by pulse period

Driver

VGS

(Driver)

ISD

(DUT)

VDS

(DUT) VSD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

D+

Gate Pulse Width

Gate Pulse Period

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

TO−220−3LD

CASE 340AT

ISSUE A DATE 03 OCT 201

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0 Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON13818G

ON SEMICONDUCTOR STANDARD

TO−220−3LD

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

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PAGE 1 OF 2

DOCUMENT7NUMBER:

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ISSUE REVISION DATE

ORELEASED FOR PRODUCTION FROM FAIRCHILD TO220B03 TO ON SEMICON-

DUCTOR. REQ. BY B. NG. 30 SEP 2016

ACHANGED NOTE I LABEL TO NOTE H IN BACK VIEW. REQ. BY H. ALLEN. 03 OCT 2017

October, 2017 − Rev. A Case Outline Number

340AT

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