SRF4427
SRF4427G
Advanced Power Technology reserves the ri ght to change, without noti ce, the speci
ficati ons and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
* G Denot es RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION:
Designed for general-purpose RF am plifier applications, such as pre-drivers and oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 18 Vdc
VCBO Collector-Base Voltage 36 Vdc
VEBO Emitter-Base Vol tage 4.0 Vdc
IC Collector Current 400 mA
Thermal Data
PDTotal Device Dissipation @ TC = 25ºC
Derate abo ve 25ºC
1.5
12.5 Watts
mW/ ºC
TSTG Storage Temperature -65 to + 150 ºC
RθJA T hermal Resistance, Junction to Ambient 125 ºC/W
Features
•Low Cost SO-8 Plastic Surface Mount Package.
•S-Parameter Characterization
•Tape and Reel Pack aging Options Available
•Max imum Available Gain – 20dB(typ) @ 200MHz
RF AND MICROWAVE DISCRETE LOW
POWER TRANSISTORS
GENERAL RF AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-98 40
FA X: (215) 631 -98 55
SRF4427
SRF4427G
Advanced Power Technology reserves the ri ght to change, without noti ce, the speci
ficati ons and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (of f) Value
Symbol Test Conditions Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) 18 --Vdc
BVCES Collector-Base Breakdown Voltage
(IC = 5 mAdc, IE = 0) 36 --Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 5 mAdc, IC = 0) 4 - -Vdc
ICBO Collector Cutoff Current
(VCB = 12.5 Vdc) - - 800 uA
STATIC (on) Value
Symbol Test Conditions Min. Typ. Max. Units
HFE DC Current Gain
(VCE = 5 Vdc, IC = 150 mAdc) 20 200
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
FTAU Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) 1.3 GHz
COB Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz) 3.4 GHz
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GPE Power Gain
VCE = 12 Vdc, f = 175 MHz, Pin = 15 mW 17 18 -dB
|S21|2Inser tion Gain
VCE = 12 Vdc , IC = 50 mAdc, f = 200 MHz 12 14 -dB
SRF4427
SRF4427G
Advanced Power Technology reserves the ri ght to change, without noti ce, the speci
ficati ons and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
PACKAGE MECHANICAL DATA
1. 4.
8. 5.
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
