TSOP322..SJ1F
Document Number 81402
Rev. 1.0, 19-Sep-06
Vishay Semiconductors
www.vishay.com
1
12318300
IR Receiver Modules for Remote Control Systems
Description
The TSOP322..SJ1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP322..SJ1F is the
standard IR remote control receiver series for 3 V
supply voltage, supporting all major transmission
codes.
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Enhanced suppression of disturbance by special
filtering
Mechanical Data
Pinning:
1 = OUT, 2 = VS, 3 = GND
Parts Table
Block Diagram Application Circuit
Part Carrier Frequency
TSOP32230SJ1F 30 kHz
TSOP32233SJ1F 33 kHz
TSOP32236SJ1F 36 kHz
TSOP32237SJ1F 36.7 kHz
TSOP32238SJ1F 38 kHz
TSOP32240SJ1F 40 kHz
TSOP32256SJ1F 56 kHz
30 kΩ
2
3
1
VS
OUT
Demo-
GND
Pass
AG
C
Input
PIN
Band
dulator
Control Circuit
16835
C1=
4.7 µF
TSOPxxxx
GND
Circuit
µC
R1= 100 Ω
+ VS
GND
Transmitte r
with
TSALxxxx V
S
R
1
and C
1
recommended to suppress power supply
disturbances. The output voltage should not be
hold continuously at a voltage below V
O
= 2.0 V
by the external circuit.
V
O
17170
OUT
e3
www.vishay.com
2
Document Number 81402
Rev. 1.0, 19-Sep-06
TSOP322..SJ1F
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 2) VS- 0.3 to + 6.0 V
Supply Current (Pin 2) IS3mA
Output Voltage (Pin 1) VO- 0.3 to
(VS + 0.3)
V
Output Current (Pin 1) IO10 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW
Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 2) Ev = 0 ISD 0.7 1.2 1.5 mA
Ev = 40 klx, sunlight ISH 1.3 mA
Supply Voltage VS2.7 5.5 V
Transmission Distance Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 250 mA
d35m
Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL 250 mV
Minimum Irradiance
(30 - 40 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min 0.2 0.4 mW/m2
Minimum Irradiance (56 kHz) VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min 0.3 0.5 mW/m2
Minimum Irradiance
(30 - 40 kHz)
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min 0.35 0.5 mW/m2
Minimum Irradiance (56 kHz) VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min 0.45 0.6 mW/m2
Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ± 45 deg
TSOP322..SJ1F
Document Number 81402
Rev. 1.0, 19-Sep-06
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d1)
t
po2)
1)
7/f
0
<t
d
<15/f
0
2)
t
pi
- 5/f
0
<t
po
< t
pi
+ 6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
E
e
- Irradiance (mW/m²)
16908
Input Burst Duration
= 950 nm,
optical test signal, fig. 1
Output Pulse
t - Output Pulse Width (ms)
po
Ee
t
VO
VOH
VOL t
600 µs 600 µs
T = 60 ms
Ton Toff
94 8134
Optical Test Signal
Output Signal, (see fig. 4)
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T - Output Pulse Width (ms)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
E
e
- Irradiance (mW/m²)
16909
To ff
= 950 nm,
optical test signal, fig. 3
To n
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f0 - Relative Frequency16925
f = f0± 5 %
f (3 dB) = f0/10
E /E - Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E - Ambient DC Irradiance (W/m2)16911
Correlation with ambient light sources:
10 W/m
2
1.4 klx (Std.illum.A, T= 2855 K)
10 W/m
2
8.2 klx (Daylight, T= 5900 K)
Ambient, = 950 nm
E - Threshold Irradiance (mW/m )
e min
2
www.vishay.com
4
Document Number 81402
Rev. 1.0, 19-Sep-06
TSOP322..SJ1F
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1 1.0 10.0 100.0 1000.0
VsRMS - AC Voltage on DC Supply Voltage (mV)
16912
f = fo
f = 10 kHz
E - Threshold Irradiance (mW/m²)
e min
f = 1 kHz
f = 100 Hz
E - Threshold Irradiance (mW/m²)
0.0 0.4 0.81.2 1.6
0.0
0.4
0.8
1.2
2.0
E - Field Strength of Disturbance (kV/m)
2.0
94 8147
1.6
e min
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
020406080 100 120
Burst Length (number of cycles/burst)
16913
f = 38 kHz, Ee = 2 mW/m2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
- 30 - 15 0 15 30 45 60 75 90
Tamb- Ambient Temperature (°C)
16918
Sensitivity in dark ambient
E - Threshold Irradiance (mW/m²)
e min
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
.
0
750 850 950 1050 1150
18998λ - Wavelength (nm)
S( ) - Relative Spectral Sensitivity
λ rel
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°
30°
10°
20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
drel - Relative Transmission Distance
TSOP322..SJ1F
Document Number 81402
Rev. 1.0, 19-Sep-06
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP322..SJ1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is neces-
sary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP322..SJ1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP322..SJ1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
Figure 13. Sensitivity vs. Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
S
- Supply Voltage (V)
17185
E - Sensitivity (mW/m )
2
e min
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
0101520
Time (ms)
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
5
0101520
Time (ms)
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation
10
www.vishay.com
6
Document Number 81402
Rev. 1.0, 19-Sep-06
TSOP322..SJ1F
Vishay Semiconductors
Package Dimensions in mm
18278
TSOP322..SJ1F
Document Number 81402
Rev. 1.0, 19-Sep-06
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
