PD- 97931 IRFM140 JANTX2N7218 JANTXV2N7218 100V, N-CHANNEL POWER MOSFET THRU-HOLE (TO-254AA) REF: MIL-PRF-19500/596 HEXFET MOSFET TECHNOLOGY (R) Product Summary Part Number RDS(on) ID IRFM140 0.077 28A TO-254AA Description Features HEXFET(R) MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Simple Drive Requirements Hermetically Sealed Dynamic dv/dt Rating Light Weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter Symbol ID1 @ VGS = 10V, TC = 25C Value Continuous Drain Current 28 ID2 @ VGS = 10V, TC = 100C Continuous Drain Current 20 Units A IDM @TC = 25C Pulsed Drain Current 112 PD @TC = 25C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 250 mJ IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 12.5 mJ dv/dt Peak Diode Recovery 5.5 V/ns TJ Operating Junction and TSTG Storage Temperature Range Lead Temperature Weight -55 to + 150 C 300 (for 5seconds) 9.3 (Typical) g For footnotes refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ RDS(on) Min. Typ. Max. Units Drain-to-Source Breakdown Voltage 100 --- --- V Breakdown Voltage Temp. Coefficient --- 0.13 --- V/C VGS = 0V, ID = 1.0mA --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.077 0.125 4.0 --- 25 250 100 -100 59 16 30.7 21 105 64 65 VGS(th) Gfs IDSS Gate Threshold Voltage Forward Transconductance IGSS QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- 2.0 9.1 --- --- --- --- --- --- --- --- --- --- --- Ls +LD Total Inductance --- 6.8 --- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1600 550 120 --- --- --- pF Static Drain-to-Source On-Resistance Zero Gate Voltage Drain Current Test Conditions V S A nA nC ns Reference to 25C, ID = 1.0mA VGS = 10V, ID2 = 20A VGS = 10V, ID1 = 28A VDS = VGS, ID = 250A VDS = 15V, ID2 = 20A VDS = 80V, VGS = 0V VDS = 80V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V ID1 = 28A VDS = 50V VGS = 10V VDD = 50V ID1 = 20A RG = 9.1 VGS = 10V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) VGS = 0V VDS = 25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 28 112 1.5 400 2.9 Test Conditions A V ns C TJ = 25C,IS = 28A, VGS = 0V TJ = 25C ,IF = 28A,VDD 30V di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Min. Typ. Max. RJC Symbol Junction-to-Case Parameter --- --- 1.0 RCS Case -to-Sink --- 0.21 --- RJA Junction-to-Ambient (Typical socket mount) --- --- 48 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L = 0.64mH, Peak IL = 28A, VGS = 10V. ISD 28A, di/dt 170A/s, VDD 100V, TJ 150C. Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current Vs.Case Temperature Fig 8. Maximum Safe Operating Area Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 V(BR)DSS tp I AS Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 Case Outline and Dimensions - Low-Ohmic TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOTES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2019-05-09 IRFM140 JANTX2N7218/JANTXV2N7218 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 International Rectifier HiRel Products, Inc. 2019-05-09