HEXFET® MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry design
achieves very low on-state resistance combined with high
transconductance. HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage
control, very fast switching and electrical parameter temperature
stability. They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and virtually any
application where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need for
additional isolating material between the device and the
heatsink. This improves thermal efficiency and reduces drain
capacitance.
Absolute Maximum Ratings
Symbol Parameter Value Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current 28
A
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current 20
IDM @TC = 25°C Pulsed Drain Current 112
PD @TC = 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 250 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery 5.5 V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (for 5seconds)
Weight 9.3 (Typical) g
-55 to + 150
PD- 97931
IRFM140
JANTX2N7218
JANTXV2N7218
1 2019-05-09
Product Summary
Part Number RDS(on) I
D
IRFM140 0.077 28A
POWER MOSFET
THRU-HOLE (TO-254AA)
Description
For footnotes refer to the page 2.
International Rectifier HiRel Products, Inc.
100V, N-CHANNEL
REF: MIL-PRF-19500/596
HEXFET® MOSFET TECHNOLOGY
Features
Simple Drive Requirements
Hermetically Sealed
Dynamic dv/dt Rating
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
TO-254AA
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 28
ISM Pulsed Source Current (Body Diode) ––– ––– 112
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– ––– 400 ns TJ = 25°C ,IF = 28A,VDD 30V
Qrr Reverse Recovery Charge ––– ––– 2.9 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 0.64mH, Peak IL = 28A,VGS = 10V.
ISD 28A, di/dt 170A/µs, VDD 100V, TJ 150°C.
Pulse width 300 µs; Duty Cycle 2%
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.077 VGS = 10V, ID2 = 20A
––– ––– 0.125 VGS = 10V, ID1 = 28A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Gfs Forward Transconductance 9.1 ––– ––– S VDS = 15V, ID2 = 20A
IDSS Zero Gate Voltage Drain Current ––– ––– 25 µA VDS = 80V, VGS = 0V
––– ––– 250 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 59
nC
ID1 = 28A
QGS Gate-to-Source Charge ––– ––– 16 VDS = 50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 30.7 VGS = 10V
td(on) Turn-On Delay Time ––– ––– 21
ns
VDD = 50V
tr Rise Time ––– ––– 105 ID1 = 20A
td(off) Turn-Off Delay Time ––– ––– 64 RG = 9.1
tf Fall Time ––– ––– 65 VGS = 10V
Ls +LD Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25
in from package) to Source lead
(6mm/ 0.25 in from package)
Ciss Input Capacitance ––– 1600 –––
pF
VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.0
°C/W
RCS Case -to-Sink 0.21 –––
RJA Junction-to-Ambient (Typical socket mount) ––– 48
Min.
–––
–––
–––
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current Vs.Case Temperature Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 8. Maximum Safe Operating Area
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
tp
V
(BR)DSS
I
AS
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - Low-Ohmic TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C
14.48 [.570]
12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2X
3.81 [.150]
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOTES:
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
0.84 [ .033]
MAX.
B
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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IRFM140
JANTX2N7218/JANTXV2N7218
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
