Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry's broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM products are found in computers--from ultra-mobile portables to powerful servers-- and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industry's widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products. Markets DRAM SRAM FLASH Mobile/Wireless Notebook PCs Desktop PCs/Workstations Servers Networking/ Communications Consumer Electronics www.samsung.com/us/business/components ASIC LOGIC TFT/LCD ODD/HDD DRAM FLASH Pages 14-16 FLASH www.samsung.com/semi/flash * SLC Flash * MLC Flash * SD and microSD Cards * Flash Ordering Information HIGH SPEED SRAM Pages 17-20 SR AM www.samsung.com/semi/sram * Asychronous * Synchronous * NtRAMTM * Late-Write R-R SRAM * DDR / II / II+ SRAM * QDR / II / II+ SRAM MULTI-CHIP PACKAGE Pages 21-22 * NOR & UtRAM * NOR & DRAM Fusion Memory MCP www.samsung.com/semi/mcp * NAND & DRAM * OneNAND & DRAM * Flex-OneNAND & DRAM * OneNAND & DRAM & OneDRAM * moviNAND & NAND & DRAM Pages 23 FU SION www.samsung.com/semi/fusion * moviNANDTM * OneDRAMTM STORAGE HaManufacturers repsr* Flash SSD Solid State Drives www.samsungssd.com Optical Disk Drives * SATA SSD www.samsungodd.com Hard Drive * External DVD www.samsung.com/hdd * Internal DVD * Internal COMBO DRAM * Graphics DDR SDRAM * DRAM Ordering Information Pages 24-27 *Optical InternalDisc CD www.samsungodd.com STOR A GE www.samsung.com/semi/dram * DDR3 SDRAM * DDR2 SDRAM * DDR SDRAM * SDRAM * Mobile SDRAM * RDRAM Pages 4-13 DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx72 M393B2873FH0-C(F8/H9/K0*)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now 2GB 1.5V 256Mx72 M393B5673FH0-C(F8/H9/K0*)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M393B5670FH0-C(F8/H9/K0*)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5173FH0-CF8(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B5170FH0-C(F8/H9/K0*)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now M393B5273CH0-C(F8/H9/K0*)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M393B5270CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B1K73CH0-CF8(04/05) 4GB 1.5V 512Mx72 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now 2Gx72 M393B2K70CM0-CF8(04/05) 4Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now 4Gx72 M393B4G70AM0-CF8(04/05) 8Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now 128Mx72 M393B2873FH0-Y(F8/H9/K0*)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now M393B5673FH0-Y(F8/H9/K0*)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M393B5670FH0-Y(F8/H9/K0*)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5173FH0-YF8(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B5170FH0-Y(F8/H9/K0*)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now M393B5273CH0-Y(F8/H9/K0*)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M393B5270CH0-Y(F8/H9/K0*)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B1K73CH0-YF8(04/05) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-Y(F8/H9/K0*)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now M393B2K70CM0-YF8(04/05) 4Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B4G70AM0-YF8(04/05) 8Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now 8GB 1.5V 1Gx72 16GB 1.5V 32GB 1.5V 1GB 1.35V 2GB 4GB 1.35V 1.35V 256Mx72 512Mx72 8GB 1.35V 1Gx72 16GB 1.35V 2Gx72 32GB 1.35V 4Gx72 Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) 4 DDR3 SDRAM 04 = IDT B0 register 05 = Inphi C0 register * K0 (1600Mbps) available in ES only 2H 2010 www.samsung.com/semi/dram Density Voltage Organization 1GB 1.5V 128Mx72 2GB 4GB 8GB 1.5V 1.5V 1.5V 256Mx72 512Mx72 1Gx72 Part Number Composition Compliance Speed (Mbps) Ranks Production M392B2873FH0-C(F8/H9)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now M392B5673FH0-C(F8/H9)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5670FH0-C(F8/H9)(04/05) 1Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 1 Now M392B5170FM0-C(F8/H9)(04/05) 2Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5273CH0-C(F8/H9)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5270CH0-C(F8/H9)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M392B1K73CM0-CF8(04/05) 4Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1K70CM0-C(F8/H9)(04/05) 4Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now 16GB 1.5V 2Gx72 M392B2G70AM0-C(F8/H9)(04/05) 8Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now 1GB 1.35V 128Mx72 M392B2873FH0-Y(F8/H9)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now 2GB 1.35V 256Mx72 4GB 1.35V 512Mx72 8GB 1.35V 1Gx72 16GB 1.35V 2Gx72 Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) M392B5673FH0-Y(F8/H9)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5670FH0-Y(F8/H9)(04/05) 1Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 1 Now M392B5170FM0-Y(F8/H9)(04/05) 2Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5273CH0-Y(F8/H9)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B5270CH0-Y(F8/H9)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M392B1K73CM0-YF8(04/05) 4Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1K70CM0-Y(F8/H9)(04/05) 4Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B2G70AM0-Y(F8/H9)(04/05) 8Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now 04 = IDT B0 register 05 = Inphi C0 register DDR3 SDRAM UNBUFFERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx64 M378B2873FH0-C(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 2GB 1.5V 256Mx64 Now M378B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now M378B5773FH0-C(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now 4GB 1.5V 512Mx64 M378B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now 8GB 1.5V 1024Mx64 M378B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now DDR3 SDRAM UNBUFFERED MODULES (ECC) Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx72 M391B2873FH0-C(F8/H9/K0*) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 2GB 1.5V 256Mx72 Now M391B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M391B5773FH0-C(F8/H9/K0*) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now 4GB 1.5V 512Mx72 M391B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now 8GB 1.5V 1024Mx72 M391B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now 1GB 1.35V 128Mx72 M391B2873FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M391B5673FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now 2GB 1.35V 256Mx72 M391B5773FH0-Y(F8/H9/K0*) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now 4GB 1.35V 512Mx72 M391B5273CH0-Y(F8/H9/K0*) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now 8GB 1.35V 1024Mx72 M391B1G73AH0-Y(F8/H9/K0*) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) * K0 (1600Mbps) available in ES only www.samsung.com/semi/dram 2H 2010 DDR3 SDRAM 5 DRAM DDR3 SDRAM VLP REGISTERED MODULES DDR3 SDRAM SODIMM MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx64 M471B2873FHS-C(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 2GB 1.5V 256Mx64 Now M471B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now M471B5773FHS-C(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now 4GB 1.5V 512Mx64 M471B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now 8GB 1.5V 1024Mx64 M471B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now 1GB 1.35V 128Mx64 M471B2873FHS-Y(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now M471B5673FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now 2GB 1.35V 256Mx64 M471B5773FHS-Y(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now 4GB 1.35V 512Mx64 M471B5273CH0-Y(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now 8GB 1.35V 1024Mx64 M471B1G73AH0-Y(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) * K0 (1600Mbps) available in ES only DDR3 SDRAM COMPONENTS Density Voltage 1Gb 1.5V 2Gb 1.5V Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production 256M x4 K4B1G0446F-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now 128M x8 K4B1G0846F-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 512M x4 K4B2G0446C-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now 256M x8 K4B2G0846C-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 128M x16 K4B2G1646C-HC(F8/H9/K0*/MA*/NB*) 96 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x13.3mm Now 256M x4 K4B1G0446F-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now 128M x8 K4B1G0846F-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 512M x4 K4B2G0446C-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now 256M x8 K4B2G0846C-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 1Gb 1.35V 2Gb 1.35V Notes: F7 = DDR3-800 (6-6-6) MA = DDR3-1866 (13-13-13) F8 = DDR3-1066 (7-7-7) NB = DDR3-2133 (14-14-14) H9 = DDR3-1333 (9-9-9) * K0, MA, and NB are available in ES only K0 = DDR3-1600 (11-11-11) DDR2 SDRAM REGISTERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Register Rank Production 1GB 128Mx72 M393T2863FBA-C(E6/F7) (128M x8)*9 Lead free 667/800 Y 1 Now 2GB 256Mx72 M393T5660FBA-C(E6/F7) (256M x4)*18 Lead free 667/800 Y 1 Now M393T5663FBA-C(E6/E7) (128M x8)*18 Lead free 667/800 Y 2 Now M393T5160FBA-C(E6/F7) (256M x4)*36 Lead free 667/800 Y 2 Now Compliance Speed (Mbps) Register Rank Production Lead free 667 Y 1 4GB 512Mx72 Notes: E6=PC2-5300 (DDR2-667 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) E7=PC2-6400 (DDR2-800 @ CL=5) Voltage = 1.8V DDR2 SDRAM VLP REGISTERED MODULES Density Organization Part Number Composition 2GB 256Mx72 M392T5660FBA-CE6 (256M x4)*18 6 DDR3 & DDR2 SDRAM 2H 2010 www.samsung.com/semi/dram Density Organization Part Number Composition Compliance Speed (Mbps) Voltage Rank Production 2GB 256Mx72 M395T5663FB4-CE68 (128M x8)*18 Lead free 667 1.8V 2 Now 512Mx72 M395T5160FB4-CE68 (256M x4)*36 Lead free 667 1.8V 2 Now 512Mx72 M395T5163FB4-CE68 (128M x8)*36 Lead free 667 1.8V 4 Now 4GB Notes: DRAM DDR2 SDRAM FULLY BUFFERED MODULES E6 = PC2-5300 (DDR2-667 @ CL=5) AMB = IDT L4 Voltage = 1.8V (AMB Voltage = 1.5V) DDR2 SDRAM UNBUFFERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 128Mx64 M378T2863FBS-C(E6/F7/E7) (128M x8)*8 Lead free 667/800 1 Now 2GB 256Mx64 M378T5663FB3-C(E6/F7/E7) (128M x8)*16 Lead free 667/800 2 Now Notes: E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM UNBUFFERED MODULES (ECC) Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 128Mx72 M391T2863FB3-C(E6/F7) (128Mx8)*9 Lead free 667/800 1 Now 2GB 256Mx64 M391T5663FB3-C(E6/F7) (128Mx8)*18 Lead free 667/800 2 Now Notes: E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM SODIMM MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 128Mx64 M470T2863FB3-C(E6/F7/E7) (64Mx16)*8 Lead free 667/800 2 Now 2GB 256Mx64 M470T5663FB3-C(E6/F7/E7) (128M x8)*8 Lead free 667/800 2 Now Notes: E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM COMPONENTS Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production 256Mb 16Mx16 K4T56163QN-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now 128M x4 K4T51043QI-HC(E6/F7/E7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now 64M x8 K4T51083QI-HC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now 32M x16 K4T51163QI-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now 128M x4 K4T51043QJ-HC(E6/F7/E7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Q3 64M x8 K4T51083QJ-HC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Q3 32M x16 K4T51163QJ-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Q3 256M x4 K4T1G044QF-BC(E6/F7/E7) 68-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now 128M x8 K4T1G084QF-BC(E6/F7/E7/F8) 68-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now 64M x16 K4T1G164QF-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now 512Mb 1Gb Notes: E6=DDR2-667 (5-5-5) F7=DDR2-800 (6-6-6) E7=DDR2-800 (5-5-5) F8=DDR2-1066 (7-7-7) Voltage = 1.8V www.samsung.com/semi/dram 2H 2010 DDR2 SDRAM 7 DDR SDRAM 1U REGISTERED MODULES Density Organization Part Number Composition Speed (Mbps) 1GB 128Mx72 M312L2920GH3-CB3 (128Mx4)*18 333/400 2GB 256Mx72 M312L5720GH3-CB3 (128Mx4)*36 333/400 Notes: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3) Type: 184-pin DDR DRAM SODIMM MODULES Density Organization Part Number Composition Speed (Mbps) 512MB 64Mx64 M470L6524GL0-CB300 (32M x 16)*8 333 Notes: B0 = DDR266 (133MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3) B3 = DDR333 (166MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) Organization Part Number # Pins - Package Speed (Mbps) 64Mx4 K4H560438N-LCB3/B0 66-TSOP 266/333 32Mx8 K4H560838N-LCCC/B3 66-TSOP 333/400 16Mx16 K4H561638N-LCCC/B3 66-TSOP 333/400 K4H510438G-LCB3/B0 66-TSOP 266/333 K4H510438G-HCCC/B3 60-FBGA 333/400 K4H510838G-LCCC/B3 66-TSOP 333/400 K4H510838G-HCCC/B3 60-FBGA 333/400 DDR SDRAM COMPONENTS Density 256Mb 128Mx4 512Mb 64Mx8 32Mx16 K4H511638G-LCCC/B3 66-TSOP 333/400 128Mb 8Mx16 K4H281638O-LCCC 66-TSOP 400 Notes: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3) 8 DDR 2H 2010 www.samsung.com/semi/dram Density 64Mb 128Mb 256Mb 512Mb Notes: Organization Part Number # Pins - Package Speed (Mbps) Refresh Remarks 8Mx8 K4S640832N-LC75000 54-TSOP 133 4K EOL with no replacement 4Mx16 K4S641632N-LC(L)(75/60)000 54-TSOP 133/166 4K EOL with no replacement 16Mx8 K4S280832O-LC(L)75000 54-TSOP 133 4K 8Mx16 K4S281632O-LC(L)(75/60)000 54-TSOP 133/166 4K 64Mx4 K4S560432N-LC(L)75000 54-TSOP 133 8K 32Mx8 K4S560832N-LC(L)75000 54-TSOP 133 8K 16Mx16 K4S561632N-LC(L)(75/60)000 54-TSOP 133/166 8K 128Mx4 K4S510432D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement 64Mx8 K4S510832D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement 32Mx16 K4S511632D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement L = Commercial Temp., Low Power For Industrial Temperature, check with SSI Marketing Banks: 4 DRAM SDRAM COMPONENTS All products are Lead Free Voltage: 3.3V Speed: PC133 (133MHz CL=3/PC100 CL2) RDRAM COMPONENTS Density Organization Part Number Speed (Mbps) # Pins-Package Refresh Note 288M x18 K4R881869I-DCT9000 1066 92-FBGA 16K/32ms EOL in Aug'10 Notes: All products are lead free GRAPHICS DRAM COMPONENTS Type Density Organization Part Number Package VDD/VDDQ Speed Bin (MHz) GDDR5 1Gb 32Mx32 K4G10325FE-HC(1) 170-FBGA 1.5/1.5V 1800/2000/2500 1Gb 32Mx32 GDDR3 GDDR2 Status K4J10324KE-HC(1) 136-FBGA 1.8V/1.8V 700/800/1000/1200 K4J52324QH-HC(1) 136-FBGA 1.8/1.8V 700/800 EOL Mar '10 K4J52324QH-HJ(1) 136-FBGA 1.9/1.9V 1000 EOL Mar '10 512Mb 16Mx32 K4J52324QH-HJ(1) 136-FBGA 2.05/2.05V 1200 EOL Mar '10 1Gb 64Mx16 K4N1G164QE-HC(1) 84-FBGA 1.8/1.8V 400/500 EOL Mar '10 512Mb 32Mx16 K4N51163QG-HC(1) 84-FBGA 1.8/1.8V 400/500 EOL Mar '10 K4D263238K-VC(1) 144-FBGA 2.5/2.5V 200/250 CuSmpl Oct '09 K4D263238K-UC(1) 100-TQFP 2.5/2.5V 200/250 K4D261638K-LC(1) 66-TSOPII 2.5/2.5V 200/250 4Mx32 GDDR1 128Mb Notes: Package: (1) Speeds (clock cycle - speed bin): Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA (Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA (Lead Free) H: FBGA (Halogen Free & Lead Free) E: 100 FBGA (Halogen Free & Lead Free) 04: 0.4ns (2500MHz) 05: 0.5ns (2000MHz) 5C: 0.555 (1800MHz) 07: 0.71ns (1400MHz) 08: 0.83ns (1200MHz) 09: 0.90ns (1100MHz) 8Mx16 www.samsung.com/semi/dram 2H 2010 1A: 1ns (1000MHz) 11: 1.1ns (900MHz) 12: 1.25ns (800MHz) 14: 1.429ns (700MHz) 16: 1.667ns (600MHz) 20: 2.0ns (500MHz) EOL Sep '10 22: 2.2ns (450MHz) 25: 2.5ns (400MHz) 2A: 2.86ns (350MHz) 33: 3.3ns (300MHz) 40: 4.0ns (240MHz) 50: 5.0ns (200MHz) SDRAM, RDRAM & Graphics DRAM Components 9 Mobile-SDR/DDR Density Type MSDR 256Mb MDDR MSDR 512Mb MDDR 1Gb 2Gb 4Gb MDDR MDDR MDDR Organization Part Number Package Power Production 16Mx16 K4M56163PN-BG(1) 54-FBGA 1.8V Now 8Mx32 K4M56323PN-HG(1) 90-FBGA 1.8V Now 16Mx16 K4X56163PN-FG(1) 60-FBGA 1.8V Now 8Mx32 K4X56323PN-8G(1) 90-FBGA 1.8V Now 32Mx16 K4M51163PI-BG(1) 54-FBGA 1.8V Now 16Mx32 K4M51323PI-HG(1) 90-FBGA 1.8V Now 32Mx16 K4X51163PI-FG(1) 60-FBGA 1.8V Now 16Mx32 K4X51323PI-8G(1) 90-FBGA 1.8V Now 64Mx16 K4X1G163PE-FG(1) 60-FBGA 1.8V Now 32Mx32 K4X1G323PE-8G(1) 90-FBGA 1.8V Now 64Mx16 K4X1G163PF-FG(1) 60-FBGA 1.8V MP Q1'11 32Mx32 K4X1G323PF-8G(1) 90-FBGA 1.8V MP Q1'11 128Mx16 K4X2G163PC-FG(1) 60-FBGA 1.8V Now 64Mx32 K4X2G323PC-8G(1) 90-FBGA 1.8V Now x32 (2CS, 2CKE) K4X4G303PB-AG(1) 168-FBGA, 12x12 PoP, DDP 1.8V Now x32 (2CS, 2CKE) K4X4G303PB-AG(1) 168-FBGA, 12x12 PoP, DDP 1.8V Now x32 (2CS, 2CKE) K4X4G303PB-7G(1) 240-FBGA, 14x14 PoP, DDP 1.8V Now LPDDR2 Density Type Organization Part Number Package Power Production 512Mb LPDDR2 1CH x32 K4P51323EI-AG(1) 168-FBGA, 12x12 PoP 1.8V Now 1Gb LPDDR2 1CH x32 K4P1G324EE-AG(1) 168-FBGA, 12x12 PoP 1.2V Now 1CH x32 K4P2G324EC-AG(1) 168-FBGA, 12x12 PoP 1.2V Now K3PE3E300M-XG(1) 216-FBGA, 12x12 PoP 1.2V Now K3PE3E300A-XG(1) 240-FBGA, 14x14 PoP 1.2V Now K4P4G304EC-AG(1) 168-FBGA, 12x12 PoP, DDP 1.2V Now K3PE4E400M-XG(1) 216-FBGA, 12x12 PoP, DDP 1.2V Now K3PE4E400M-XG(1) 216-FBGA, 12x12 PoP, DDP 1.2V Now K3PE4E400A-XG(1) 240-FBGA, 14x14 PoP, DDP 1.2V Now 2Gb LPDDR2 2CH x32/ch 1CH x32 4Gb Notes: LPDDR2 2CH x32/ch (1) Speed: All products offered at Extended, Low, i-TCSR & PASR & DS (Temp, Power) Mobile-SDR 60: 166MHz, CL3 75: 133MHz, CL3 Mobile-DDR D8: 200MHz, CL3 C6: 166MHz, CL3 LPDDR2 C0: 667Mbps C1: 800Mbps 10 Mobile SDR/DDR & LPDDR2 2H 2010 www.samsung.com/semi/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3. DRAM Type B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: SDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: SDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 4. Density 10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 5. Bit Organization 02: x2 04: x4 06: x4 Stack (Flexframe) 07: x8 Stack (Flexframe) www.samsung.com/semi/dram DRAM COMPONENT DRAM ORDERING INFORMATION 08: x8 15: x16 (2CS) 16: x16 26: x4 Stack (JEDEC Standard) 27: x8 Stack (JEDEC Standard) 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32 6. # of Internal Banks 2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks 7. Interface ( VDD, VDDQ) 2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V 8. Revision A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation 2H 2010 9. Package Type DDR SDRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA(Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA(Lead Free) H: FBGA(Hologen Free & Lead Free) E: 100 FBGA(Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free) DRAM Ordering Information 11 COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP 10. Temp & Power - COMMON (Temp, Power) C: Commercial, Normal (0'C - 95'C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70'C), Normal Power J: Commercial, Medium L: Commercial, Low (0'C - 95'C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85'C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40'C - 85'C) & Normal Power P: Industrial, Low (-40'C - 85'C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS 11. Speed (Wafer/Chip Biz/BGD: 00) DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) Note 1: "B3" has compatibility with "A2" and "B0" 12 DRAM Ordering Information DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) 1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 2H 2010 SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 Note: All of Lead-free or Halogen-free product are in compliance with RoHS www.samsung.com/semi/dram 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Component Revision SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3. Data bits 12: x72 184pin Low Profile Registered DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin Unbuffered SODIMM 71: x64 204pin Unbuffered SODIMM 74: x72 /ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x72 /ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x64 240pin Unbuffered DIMM 81: x72 184pin ECC unbuffered DIMM 83: x72 184pin Registered DIMM 90: x72 /ECC PLL + Register DIMM 91: x72 240pin ECC unbuffered DIMM 92: x72 240pin VLP Registered DIMM 93: x72 240pin Registered DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T: DDR2 SDRAM (1.8V VDD) 5. Depth 09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb) 6. # of Banks in Comp. & Interface 1: 4K/64mxRef., 4Banks & SSTL-2 2 : 8K/ 64ms Ref., 4Banks & SSTL-2 2: 4K/ 64ms Ref., 4Banks & LVTTL (SDR Only) 5: 8K/ 64ms Ref., 4Banks & LVTTL (SDR Only) 5: 4Banks & SSTL-1.8V 6: 8Banks & SSTL-1.8V 7. Bit Organization 0: x 4 3: x 8 4: x16 6: x 4 Stack (JEDEC Standard) 7: x 8 Stack (JEDEC Standard) 8: x 4 Stack 9: x 8 Stack 8. Component Revision A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. M: 1st Gen. Q: 17th Gen. www.samsung.com/semi/dram DRAM Module DRAM Ordering Information 2H 2010 9. Package E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA(Lead-free) 10. PCB Revision 0: Mother PCB 1: 1st Rev 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. A: Parity DIMM S: Reduced PCB U: Low Profile DIMM 11. Temp & Power C: Commercial Temp. (0C ~ 95C) & Normal Power L: Commercial Temp. (0C ~ 95C) & Low Power 12. Speed CC: (200MHz @ CL=3, tRCD=3, tRP=3) D5: (266MHz @ CL=4, tRCD=4, tRP=4) E6: (333MHz @ CL=5, tRCD=5, tRP=5) F7: (400MHz @ CL=6, tRCD=6, tRP=6) E7: (400MHz @ CL=5, tRCD=5, tRP=5) F8: (533MHz @ CL=7, tRCD=7, tRP=7) G8: (533MHz @ CL=8, tRCD=8, tRP=8) H9: (667MHz @ CL=9, tRCD=9, tRP=9) K0: (800MHz @ CL=10, tRCD=10, tRP=10) 7A: (133MHz CL=3/PC100 CL2) 13. AMB Vendor for FBDIMM 0, 5: Intel 1, 6, 8: IDT 9: Montage Note: All of Lead-free or Halogen-free product are in compliance with RoHS DRAM Ordering Information 13 SLC Flash MOQ Family Density 16Gb Mono 32Gb DDP 16Gb Based 64Gb QDP 128Gb ODP 64Gb DSP 32Gb QDP 8Gb Based 16Gb DDP 8Gb Mono 16Gb QDP 8Gb DDP 4Gb Based 4Gb Mono 2Gb Based 2Gb Mono 1Gb Based 1Gb Mono 512Mb Based 256Mb Based 512Mb Mono 256Mb Mono Part Number Package Type SLC Flash Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status K9FAG08U0M-HCB0 BGA X8 3.3 960 1000 E/S K9FAG08S0M-HCB0 BGA X8 1.8 960 1000 E/S K9KBG08U1M-HCB0 BGA X8 3.3 960 1000 E/S K9KBG08S1M-HCB0 BGA X8 1.8 960 1000 E/S K9WCG08U5M-HCB0 BGA X8 3.3 960 1000 E/S K9WCG08S5M-HCB0 BGA X8 1.8 960 1000 E/S K9QDG08U5M-HCB0 BGA X8 3.3 960 1000 E/S K9QDG08S5M-HCB0 BGA X8 1.8 960 1000 E/S K9NCG08U5M-PCK0 TSOP1 x8 3.3 960 1000 M/P K9WBG08U1M-PCB0 TSOP1 x8 3.3 960 1000 M/P K9WBG08U1M-PIB0 TSOP1 x8 3.3 960 1000 M/P K9KAG08U0M-PCB0 TSOP1 x8 3.3 960 1000 M/P K9KAG08U0M-PIB0 TSOP1 x8 3.3 960 1000 M/P K9F8G08U0M-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F8G08U0M-PIB0 TSOP1 x8 3.3 960 1000 M/P K9WAG08U1D-SCB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9WAG08U1D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9WAG08U1B-PCB0 TSOP1 x8 3.3 960 1000 M/P K9WAG08U1B-PIB0 TSOP1 x8 3.3 960 1000 M/P K9WAG08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P K9K8G08U0D-SCB0 TSOP1 HF&LF X8 3.3 960 1000 C/S K9K8G08U0D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9K8G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P K9K8G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P K9K8G08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P K9F4G08U0D-SCB0 TSOP1 HF & LF x8 3.3 960 1000 C/S K9F4G08U0D-SIB0 TSOP1 HF& LF X8 3.3 960 1000 C/S K9F4G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F4G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P K9F4G08U0B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P K9F2G08U0C-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F2G08U0C-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F2G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F2G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P K9F1G08U0D-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F1G08U0D-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F1G08U0C-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F1G08U0C-PIB0 TSOP1 x8 3.3 960 1000 M/P K9F1208U0C-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F1208U0C-PIB0 TSOP1 x8 3.3 960 1000 M/P K9F1208R0C-JIB0 63 FBGA(8.5x13) x8 1.8 1120 - M/P K9F1208U0C-JIB0 63 FBGA(8.5x13) x8 3.3 1120 - M/P K9F5608U0D-PCB0 TSOP1 x8 3.3 960 1000 M/P K9F5608U0D-PIB0 TSOP1 x8 3.3 1000 1000 M/P K9F5608R0D-JIB0 63 FBGA(9x11) x8 1.8 1280 2000 M/P K9F5608U0D-JIB0 63 FBGA(9x11) x8 3.3 1280 2000 M/P Please contact your local Samsung sales representative for latest product offerings. 14 Org. Note: All parts are lead free 2H 2010 www.samsung.com/semi/flash MLC Flash Family 32Gb Based 2bit 16Gb Based 8Gb Based 3bit 32Gb Based Density Technology Part Number Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx 32Gb Mono 27nm K9HDG08U1A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 64Gb DDP 27nm K9LCG08U0A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 128Gb QDP 27nm K9GBG08U0A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 16Gb Mono 32nm K9GAG08U0E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 Comments 32Gb DDP 32nm K9LBG08U0E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 64Gb QDP 32nm K9HCG08U1E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 8Gb Mono 32nm K9G8G08U0C-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000 32Gb mono 32nm K9CDG08U5A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to 2xnm Q3'10 64Gb DDP 32nm K9BCG08U1A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to 2xnm Q3'10 128Gb QDP 32nm K9ABG08U0A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to 2xnm Q3'10 Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free SD and MicroSD FLASH CARDS Application Density Controller 2GB SD Card 4GB Contact your local Samsung rep for availability and ordering information 8GB 16GB 2GB 4GB MicroSD Card 8GB Contact your local Samsung rep for availability and ordering information 16GB 32GB Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free Solid State Drives (SSD) Interface SATA II (Native) SATA II (Native) Size 2.5" mSATA Connector Thin SATA mSATA Controller Comp. MAX 16Gb TMDDR Controller 32Gb Toggle-Mode DDR NAND MAX 16Gb Capacity Part Number 64GB MZ5PA064HMCD-0A000 128GB MZ5PA128HMCD-0A000 256GB MZ5PA256HMDR-0A000 512GB Contact Sales 32GB MZMPA032HMCD-00000 64GB MZMPA064HMDR-00000 128GB MZMPA128HMFU-00000 Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free www.samsung.com/semi/flash 2H 2010 MLC Flash, SD/MicroSD Flash Cards & SSD 15 FLASH Type MOQ Package Type FLASH Product Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X Pre-Program Version Customer Bad Block Temp Package --Generation Mode SAMSUNG Memory NAND Flash Small Classification Density Density Organization Organization Vcc 1. Memory (K) 2. NAND Flash : 9 3. Small Classification (SLC : Single Level Cell, MLC : Multi Level Cell) 7 : SLC moviNAND 8 : MLC moviNAND F : SLC Normal G : MLC Normal H : MLC QDP K : SLC DDP L : MLC DDP M : MLC DSP N : SLC DSP P : MLC 8 Die Stack Q : SLC 8 Die Stack S : SLC Single SM T : SLC SINGLE (S/B) U : 2 Stack MSP W : SLC 4 Die Stack 4~5. Density 12 : 512M 56 : 256M 1G : 1G 2G : 2G 4G : 4G 8G : 8G AG : 16G BG : 32G CG : 64G DG : 128G EG : 256G LG : 24G NG : 96G ZG : 48G 00 : NONE 6~7. Organization 00 : NONE 08 : x8 16 : x16 16 Flash Ordering Information 8. Vcc 13. Temp A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) E : 2.3V~3.6V R : 1.8V (1.65V~1.95V) Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V U : 2.7V~3.6V V : 3.3V (3.0V~3.6V) W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE 9. Mode 0 : Normal 1 : Dual nCE & Dual R/nB 3 : Tri /CE & Tri R/B 4 : Quad nCE & Single R/nB 5 : Quad nCE & Quad R/nB 9 : 1st block OTP A : Mask Option 1 L : Low grade C : Commercial I : Industrial 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code) 14. Customer Bad Block B : Include Bad Block D : Daisychain Sample L : 1~5 Bad Block N : ini. 0 blk, add. 10 blk S : All Good Block 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code) 15. Pre-Program Version 0 : None Serial (1~9, A~Z) 10. Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation D : 5th Generation 11. " ----" 12. Package A : COB B : FBGA (Halogen-Free, Lead-Free) C : CHIP BIZ D : 63-TBGA F : WSOP (Lead-Free) G : FBGA H : TBGA (Lead-Free) I : ULGA (Lead-Free) (12*17) J : FBGA (Lead-Free) L : ULGA (Lead-Free) (14*18) M : TLGA N : TLGA2 P : TSOP1 (Lead-Free) Q : TSOP2 (Lead-Free) S : TSOP1 (Halogen-Free, Lead-Free) T : TSOP2 U : COB (MMC) V : WSOP W : Wafer Y : TSOP1 Z : WELP (Lead-Free) 2H 2010 www.samsung.com/semi/flash Type Density 72Mb 36Mb 18Mb NtRAM 8Mb 4Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 2Mx36 K7N643645M 100-TQFP, 165FBGA SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 4Mx18 K7N641845M 100-TQFP, 165FBGA SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 1Mx36 K7N323635C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2Mx18 K7N321835C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 1Mx36 K7M323635C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production 2Mx18 K7M321835C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production 1Mx18 K7N161831B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 512Kx36 K7N163631B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 1Mx18 K7M161835B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production 512Kx36 K7M163635B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production 256Kx36 K7N803601B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 512Kx18 K7N801801B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 256Kx36 K7N803609B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 512Kx18 K7N801809B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 256Kx36 K7N803645B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs 512Kx18 K7N801845B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs 256Kx36 K7N803649B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs 512Kx18 K7N801849B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs 512Kx18 K7M801825B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs 256Kx36 K7M803625B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs 128Kx36 K7N403609B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs 256Kx18 K7N401809B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs 256Kx18 K7B401825B 100-TQFP SB 3.3 6.5 133 3.3, 2.5 Not for new designs SPB and FT 4Mb NOTES: All TQFP products are lead free NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns Late-Write RR SRAM Density 32Mb 8Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 1Mx36 K7P323674C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production 2Mx18 K7P321874C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production 256Kx36 K7P803611B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production 512Kx18 K7P801811B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production 256Kx36 K7P803666B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production 512Kx18 K7P801866B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production www.samsung.com/semi/flash 2H 2010 NtRAM & Late Write RR SRAM 17 SR AM NtRAM DDR SYNCHRONOUS SRAM Type Density 16Mb DDR 8Mb Organization Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time (MHz) I/O Voltage (V) Production Status 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs 512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B 4Mx18 K7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B K7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B 72Mb 2Mx36 2Mx18 DDR II CIO/ SIO 36Mb 1Mx36 1Mx18 18Mb 512Kx36 K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B K7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7I321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B K7I321884C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B K7J321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B K7I323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B K7I323684C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B K7J323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B K7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B K7K3218T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K3218U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5 clocks latancy K7K3236T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K3236U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5 clocks latancy K7K1618T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K1618U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5 clocks latancy K7K1636T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K1636U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5 clocks latancy 2Mx18 36Mb 1Mx36 DDR II+ CIO 1Mx18 18Mb 512Kx36 NOTES: Comments 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz 18 DDR I / II / II+ 2H 2010 www.samsung.com/semi/sram Type Density Organization 1Mx18 QDR I 18Mb 512Kx36 8Mx9 72Mb 4Mx18 2Mx36 4Mx9 QDR II 36Mb 2Mx18 1Mx36 2Mx9 18Mb 1Mx18 Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status Comments K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7R640982M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R641882M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B K7R320982C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R321882C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R321884C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B K7R323682C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R323684C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B K7R160982B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R161882B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B K7R163682B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B K7S3236T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2 clocks latancy K7S3236U4C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production QDR II + 4B, 2.5 clocks latancy K7S3218T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2 clocks latancy K7S3218U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2.5 clocks latancy 1Mx18 K7S1618T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2 clocks latancy 512Kx36 K7S1636U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2.5 clocks latancy 512Kx36 1Mx36 36Mb QDR II+ 2Mx18 18Mb NOTES: For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed www.samsung.com/semi/sram 2H 2010 QDR I / II / II+ 19 SR AM QDR SYNCHRONOUS SRAM Synchronous SRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 K 7 X X X X X X X X - X X X X X Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode SAMSUNG Memory Sync SRAM Small Classification Density Density Organization Organization Vcc, Interface, Mode 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 80: 8M 40: 4M 64: 72M 16: 18M 32: 36M 09: x9 32: x32 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 20 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation 11. "--" 6~7. Organization 08: x8 18: x18 36: x36 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 74: 1.8V,2.5V,HSTL,All 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 88: 1.8V,HSTL,R-R T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 SRAM Ordering Information WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC, selected AC sort 14~15. Speed Sync Burst,Sync Burst + NtRAM < Mode is R-L > (Clock Accesss Time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 16: 166MHz 20: 200MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz (except Sync Pipe) 16. Packing Type (16 digit) 12. Package H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power COMMON (Temp,Power) 0: NONE,NONE (Containing of error handling code) C: Commercial,Normal E: Extended,Normal I: Industrial,Normal 2H 2010 - Common to all products, except of Mask ROM - Divided into TAPE & REEL (In Mask ROM, divided into TRAY, AMMO packing separately) Type Component Packing Type TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing New Marking T 0 (Number) S Y A P M www.samsung.com/semi/sram MCP: NAND/DRAM Memory NAND Density 1Gb NAND & DRAM 2Gb 4Gb DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package 256Mb (x16,x32) 3.0V/1.8V - 1.8V 107/137FBGA 152FBGA 512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA 119/152FBGA 1Gb (x32) 1.8V - 1.8V 137FBGA - 512Mb (x16,x32) 1.8V - 1.8V 107/137FBGA 119/152FBGA 1Gb (x16,x32) 1.8V - 1.8V 107/137FBGA 152/160/168FBGA 1Gb (x32) 2.7V - 1.8V 137FBGA - DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package 256Mb (x32) 3.3V/1.8V - 1.8V 188FBGA 152FBGA 512Mb (x16,x32) 1.8V - 1.8V 167/202FBGA 152FBGA MCP: OneNAND/DRAM Memory OneNAND Density 512Mb 1Gb OneNAND & DRAM 2Gb 4Gb 512Mb (x16,x32) 1.8V - 1.8V 167/202FBGA 168FBGA 1Gb (x32) 1.8V - 1.8V - 168FBGA 512Mb (x16,x32) 1.8V - 1.8V - 152/160/168FBGA 1Gb (x16,x32) 1.8V - 1.8V 167/202FBGA 152/160/168FBGA 2Gb (x32) 1.8V - 1.8V - 152/168FBGA 1Gb (x16) 1.8V - 1.8V 202FBGA - MCP: Flex-OneNAND/DRAM Memory Flex-OneNAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package Flex-OneNAND & DRAM 8Gb 2Gb (x32) 1.8V - 1.8V 202FBGA - MCP Package PoP Package Memory Flex-OneNAND Density DRAM Density (Org.) Voltages (NAND-DRAM) OneNAND & DRAM & OneDRAM 2Gb 1Gb (x16) 1.8V - 1.8V www.samsung.com/semi/mcp 2H 2010 MCP MCP: OneNAND/DRAM/OneNAND 216FBGA MCP 21 MCP: moviNAND/NAND/DRAM Memory movi & NAND Density 512Mb moviNAND & NAND & DRAM 1Gb 2Gb 4Gb DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package 256Mb(x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA 512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA 256Mb (x16,x32) 3.0V/1.8V - 1.8V 107/137FBGA 512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA 1Gb (x32) 1.8V - 1.8V 137FBGA 512Mb (x16,x32) 1.8V - 1.8V 107/137FBGA 1Gb (x16,x32) 1.8V - 1.8V 107/137FBGA 1Gb (x32) 2.7V - 1.8V 137FBGA UtRAM Density (Org.) Voltages (NOR-UtRAM) MCP Package Remark MCP: NOR/UtRAM Memory NOR Density 512Mb NOR & UtRAM 256Mb 128Mb 128Mb 1.8V - 1.8V 107FBGA 128Mb 1.8V - 1.8V 107FBGA 1.8V - 1.8V 56FBGA 64Mb 1.8V - 1.8V 84/88FBGA 32Mb 1.8V - 1.8V 84/88FBGA DRAM Density (Org.) Voltages (NOR-DRAM) Package 128Mb (x16) 1.8V - 1.8V 103FBGA 256Mb (x16) 1.8V - 1.8V 103FBGA Remark MCP: NOR/DRAM Memory NOR Density NOR & DRAM 512Mb Remark Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free 22 MCP 2H 2010 www.samsung.com/semi/mcp moviNANDTM moviNAND combines high-density MLC NAND Flash with an MMC controller in a single chip that has an MMC interface. moviNAND delivers dense, cost-effectice storage for embedded applications. Density Package Type Org. Vol (V) Remarks 2GB FBGA x8 1.8/3.3 MMC 4.3 & MMC 4.4 4GB FBGA x8 1.8/3.3 8GB FBGA x8 1.8/3.3 16GB FBGA x8 1.8/3.3 32GB FBGA x8 1.8/3.3 64GB FBGA x8 1.8/3.3 Contact your local Samsung rep for availability and ordering information. Please contact your local Samsung sales representative for the latest product offerings. Note: All parts are lead free OneDRAMTM OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. Density Part Number Package Type KJA51Z23PC-AAO 216FBGA (14x14) 512Mb KJA51Y23PC-AAO 152FBGA (14x14) Vol (V) Temp. Speed 1.8V extended 133MHz 1.8V extended 166MHz A-port: x16 (SDR/DDR) B-port: x16 (SDR/DDR) A-port: x16 (SDR/DDR) B-port: x16 (SDR/DDR) A-port: x32SDR KJA1GW25PD-EAO B-port: x32DDR" A-port: x16DDR KJA1GZ45PD-EAO 1Gb Org. 240FBGA (14x14) KJA1GZ45PD-EAO B-port: x32DDR" A-port: x16DDR B-port: x16DDR" A-port: x16SDR KJA1GY25PD-EAO B-port: x32DDR" FU SION Please contact your local Samsung sales representative for the latest product offerings. Note: All parts are lead free www.samsung.com/semi/fusion 2H 2010 Fusion Memory 23 3.5" Hard Disk Drives Family F1DT F2EG F3 F3EG F4 24 Capacity (GB) RPM Interface Buffer Sector Model 80 7200 SATA 3.0 Gbps 8 512 HD083GJ 80 7200 SATA 3.0 Gbps 16 512 HD084GJ 160 7200 SATA 3.0 Gbps 8 512 HD161GJ 160 7200 SATA 3.0 Gbps 16 512 HD162GJ 250 7200 SATA 3.0 Gbps 8 512 HD251HJ 250 7200 SATA 3.0 Gbps 16 512 HD252HJ 320 7200 SATA 3.0 Gbps 8 512 HD321HJ 320 7200 SATA 3.0 Gbps 16 512 HD322HJ 500 7200 SATA 3.0 Gbps 8 512 HD501IJ 500 7200 SATA 3.0 Gbps 16 512 HD502IJ 640 7200 SATA 3.0 Gbps 16 512 HD642JJ 750 7200 SATA-2 16 512 HD752LJ 750 7200 SATA 3.0 Gbps 32 512 HD753LJ 1 TB 7200 SATA 3.0 Gbps 16 512 HD102UJ 1 TB 7200 SATA 3.0 Gbps 32 512 HD103UJ 500 5400 SATA 3.0 Gbps 16 512 HD502HI 1 TB 5400 SATA 3.0 Gbps 32 512 HD103SI 1.5 TB 5400 SATA 3.0 Gbps 32 512 HD154UI 160 7200 SATA 3.0 Gbps 8 512 HD164GJ 250 7200 SATA 3.0 Gbps 8 512 HD254GJ 320 7200 SATA 3.0 Gbps 8 512 HD324HJ 160 7200 SATA 3.0 Gbps 16 512 HD163GJ 250 7200 SATA 3.0 Gbps 16 512 HD253GJ 320 7200 SATA 3.0 Gbps 16 512 HD323HJ 500 7200 SATA 3.0 Gbps 16 512 HD502HJ 750 7200 SATA 3.0 Gbps 32 512 HD754JJ 1TB 7200 SATA 3.0 Gbps 32 512 HD103SJ 250 - SATA 3.0 Gbps 16 512 HD253GI 320 - SATA 3.0 Gbps 16 512 HD324HI 500 - SATA 3.0 Gbps 16 512 HD503HI 750 - SATA 3.0 Gbps 32 512 HD754JI 1TB - SATA 3.0 Gbps 32 512 HD105SI 1.5 TB - SATA 3.0 Gbps 32 512 HD153WI 2 TB - SATA 3.0 Gbps 32 512 HD203WI 160 7200 SATA 3.0 Gbps 8 512 HD165GJ 160 7200 SATA 3.0 Gbps 16 512 HD166GJ 250 7200 SATA 3.0 Gbps 8 512 HD255GJ 250 7200 SATA 3.0 Gbps 16 512 HD255GJ 320 7200 SATA 3.0 Gbps 16 512 HD323HJ Hard Disk Drives 2H 2010 www.samsung.com/semi/hdd 3.5" Enterprise RAID Drives Family F1R F3R Capacity (GB) RPM Interface Buffer Sector Model 250 7200 SATA 3.0 Gbps 16 512 HE252HJ 320 7200 SATA 3.0 Gbps 16 512 HE322HJ 500 7200 SATA 3.0 Gbps 16 512 HE502IJ 640 7200 SATA 3.0 Gbps 16 512 HE642JJ 750 7200 SATA 3.0 Gbps 32 512 HE753LJ 1 TB 7200 SATA 3.0 Gbps 32 512 HE103UJ 250 7200 SATA 3.0 Gbps 16 512 HE253GJ 500 7200 SATA 3.0 Gbps 16 512 HE502HJ 750 7200 SATA 3.0 Gbps 32 512 HE754JJ 1 TB 7200 SATA 3.0 Gbps 32 512 HE103SJ Capacity (GB) RPM Interface Buffer Sector Model 160 5400 SATA 3.0 Gbps 8 512 HM161GI 250 5400 SATA 3.0 Gbps 8 512 HM251HI 320 5400 SATA 3.0 Gbps 8 512 HM321HI 500 5400 SATA 3.0 Gbps 8 512 HM501JI 640 5400 SATA 3.0 Gbps 8 512 HM641JI 120 5400 SATA 3.0 Gbps 8 512 HM120JI 160 5400 SATA 3.0 Gbps 8 512 HM161JI 250 5400 SATA 3.0 Gbps 8 512 HM250II 320 5400 SATA 3.0 Gbps 8 512 HM320HI 400 5400 SATA 3.0 Gbps 8 512 HM400HI 500 5400 SATA 3.0 Gbps 8 512 HM500GI 250 7200 SATA 3.0 Gbps 16 512 HM250HJ 320 7200 SATA 3.0 Gbps 16 512 HM320HJ 500 7200 SATA 3.0 Gbps 16 512 HM500JJ 640 7200 SATA 3.0 Gbps 16 512 HM640JJ 750 5400 SATA 3.0 Gbps 8 512 HM750LI 1 TB 5400 SATA 3.0 Gbps 8 512 HM100UI 2.5" Hard Disk Drives Family M7E M7 MP4 STOR A GE MT2 www.samsung.com/hdd 2H 2010 Hard Disk Drives 25 BD-COMBO Interface Speed Type Loading BD ROM READ 8X H/H Tray BD ROM READ 12X H/H Tray Lightscribe Medel X TS-HB33A / SH-B083A O TS-HB33L / SH-B083L X TS-HB43A / SH-B123A O TS-HB43L / SH-B123L TS-LB23A / SN-B043A SATA X BD-ROM READ 4X Slim TS-LB23B TS-LB23D Tray O TS-LB23L / SN-B043L TS-LB23P Slot O TS-TB23L DVD-W Interface Speed Type Loading Lightscribe Medel DVD Write 22X H/H Tray X TS-H653G SATA DVD Write 20X H/H Tray X TS-H653H DVD Write 20X H/H Tray X TS-H653J DVD Write 22X H/H Tray X TS-H662A / SH-S222A PATA SATA PATA SATA DVD Write 22X H/H Tray X TS-H663C / SH-S223C DVD Write 24X H/H Tray X TS-H663D / SH-S243D DVD Write 22X H/H Tray O TS-H653R DVD Write 16X H/H Tray O TS-H653T DVD Write 22X H/H Tray O TS-H662L / SH-S222L DVD Write 22X H/H Tray O TS-H663L / SH-S223L DVD Write 24X H/H Tray O TS-H663N / SH-S243N TS-L633B / SN-S083B X Tray TS-L633N / SN-S083N O TS-L633R / SN-S083R X TS-T633C / SN-T083C DVD Write 8X TS-L633Y Slot Tray O X Ultra Slim Slot 26 Optical Disk Drives TS-L633F / SN-S083F TS-L633J Slim SATA TS-L633C / SH-S083C 2H 2010 X TS-T633P TS-U633F TS-U633J / SU-S083J TS-D633A TS-D633C www.samsung.com/hdd DVD-W Slim External Interface USB 2.0 Speed DVD Write 8X Type Loading Lightscribe Medel Slim Tray X SE-S084C Ultra Slim Tray X SE-S084D Slim Tray X SE-S084F Slot O SE-T084P DVD-ROM Interface SATA Speed Type Loading Lightscribe Medel DVD 16X H/H Tray X TS-H353C / SH-D163J DVD 8X Slim Tray X DVD 8X Utra Slim Tray X TS-L333B TS-L333D TS-U333A DVD-W Loader Speed Type Loading Lightscribe Medel DVD 8X H/H Tray X TS-P632F STOR A GE Interface PATA www.samsungodd.com 2H 2010 Optical Disk Drives 27 Memory System LSI DRAM Flash SRAM MCP Fusion ASICs APs Display Drivers Imaging ICs Foundry Storage Solid State Drives Hard Drives Optical Disc Drives LCD Panels TV Monitors Notebook PC Mobile Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713 www.samsung.com/us/business/components Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2010. 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