2H 2010
PRODUCT SELECTION GUIDE
Samsung Semiconductor, Inc.
MEMORY & STORAGE
Samsung Semiconductor, Inc.
Samsung offers the industry’s broadest memory portfolio and has maintained its
leadership in memory technology for 16 straight years. Its DRAM, ash and SRAM
products are found in computers—from ultra-mobile portables to powerful servers—
and in a wide range of handheld devices such as smartphones and MP3 players.
Samsung also delivers the industry’s widest line of storage products. These include
optical and hard disk drives as well as ash storage, such as the all-ash Solid State
Drive and a range of embedded and removable ash storage products.
www.samsung.com/us/business/components
Mobile/Wireless
Notebook PCs
Desktop
PCs/Workstations
Servers
Networking/
Communications
Consumer
Electronics
Markets DRAM SRAM FLASH ASIC LOGIC TFT/LCD ODD/HDD
STORAGE FUSION MCP SRAM FL ASH DRAM
DRAM
www.samsung.com/semi/dram
• DDR3 SDRAM
• DDR2 SDRAM
• DDR SDRAM
• SDRAM
• Mobile SDRAM
• RDRAM
• Graphics DDR SDRAM
• DRAM Ordering Information
Pages 4-13
MULTI-CHIP PACKAGE
www.samsung.com/semi/mcp
• NAND & DRAM
• OneNAND & DRAM
• Flex-OneNAND & DRAM
• OneNAND & DRAM & OneDRAM
• moviNAND & NAND & DRAM
• NOR & UtRAM
• NOR & DRAM
Pages 21-22
Fusion Memory
www.samsung.com/semi/fusion
• moviNAND™
• OneDRAM™
HaManufacturers repsr• Flash
Solid State Drives
Optical Disk Drives
www.samsungodd.com
• External DVD
• Internal DVD
• Internal COMBO
• Internal CD
Pages 23
STORAGE Pages 24-27
HIGH SPEED SRAM
www.samsung.com/semi/sram
• Asychronous
• Synchronous
• NtRAM™
• Late-Write R-R SRAM
• DDR / II / II+ SRAM
• QDR / II / II+ SRAM
Pages 17-20
FLASH
www.samsung.com/semi/flash
• SLC Flash
• MLC Flash
• SD and microSD Cards
• Flash Ordering Information
Pages 14-16
SSD
www.samsungssd.com
• SATA SSD
Hard Drive
www.samsung.com/hdd
Optical Disc
www.samsungodd.com
42H 2010
DDR3 SDRAM REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
1GB 1.5V 128Mx72 M393B2873FH0-C(F8/H9/K0*)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now
2GB 1.5V 256Mx72 M393B5673FH0-C(F8/H9/K0*)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M393B5670FH0-C(F8/H9/K0*)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
4GB 1.5V 512Mx72
M393B5173FH0-CF8(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now
M393B5170FH0-C(F8/H9/K0*)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now
M393B5273CH0-C(F8/H9/K0*)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M393B5270CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
8GB 1.5V 1Gx72 M393B1K73CH0-CF8(04/05) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now
M393B1K70CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now
16GB 1.5V 2Gx72 M393B2K70CM0-CF8(04/05) 4Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now
32GB 1.5V 4Gx72 M393B4G70AM0-CF8(04/05) 8Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now
1GB 1.35V 128Mx72 M393B2873FH0-Y(F8/H9/K0*)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now
2GB 1.35V 256Mx72 M393B5673FH0-Y(F8/H9/K0*)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M393B5670FH0-Y(F8/H9/K0*)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
4GB 1.35V 512Mx72
M393B5173FH0-YF8(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now
M393B5170FH0-Y(F8/H9/K0*)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now
M393B5273CH0-Y(F8/H9/K0*)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M393B5270CH0-Y(F8/H9/K0*)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
8GB 1.35V 1Gx72 M393B1K73CH0-YF8(04/05) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now
M393B1K70CH0-Y(F8/H9/K0*)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now
16GB 1.35V 2Gx72 M393B2K70CM0-YF8(04/05) 4Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now
32GB 1.35V 4Gx72 M393B4G70AM0-YF8(04/05) 8Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now
NOTES: F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
04 = IDT B0 register
05 = Inphi C0 register
* K0 (1600Mbps) available in ES only
www.samsung.com/semi/dramDDR3 SDRAM
52H 2010
DDR3 SDRAM VLP REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
1GB 1.5V 128Mx72 M392B2873FH0-C(F8/H9)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now
2GB 1.5V 256Mx72 M392B5673FH0-C(F8/H9)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5670FH0-C(F8/H9)(04/05) 1Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 1 Now
4GB 1.5V 512Mx72
M392B5170FM0-C(F8/H9)(04/05) 2Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5273CH0-C(F8/H9)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5270CH0-C(F8/H9)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
8GB 1.5V 1Gx72 M392B1K73CM0-CF8(04/05) 4Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now
M392B1K70CM0-C(F8/H9)(04/05) 4Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
16GB 1.5V 2Gx72 M392B2G70AM0-C(F8/H9)(04/05) 8Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
1GB 1.35V 128Mx72 M392B2873FH0-Y(F8/H9)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333 1 Now
2GB 1.35V 256Mx72 M392B5673FH0-Y(F8/H9)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5670FH0-Y(F8/H9)(04/05) 1Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 1 Now
4GB 1.35V 512Mx72
M392B5170FM0-Y(F8/H9)(04/05) 2Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5273CH0-Y(F8/H9)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now
M392B5270CH0-Y(F8/H9)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
8GB 1.35V 1Gx72 M392B1K73CM0-YF8(04/05) 4Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now
M392B1K70CM0-Y(F8/H9)(04/05) 4Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
16GB 1.35V 2Gx72 M392B2G70AM0-Y(F8/H9)(04/05) 8Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now
NOTES: F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
04 = IDT B0 register
05 = Inphi C0 register
DDR3 SDRAM UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
1GB 1.5V 128Mx64 M378B2873FH0-C(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
2GB 1.5V 256Mx64 M378B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
M378B5773FH0-C(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
4GB 1.5V 512Mx64 M378B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
8GB 1.5V 1024Mx64 M378B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
www.samsung.com/semi/dram DDR3 SDRAM
DRAM
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
1GB 1.5V 128Mx72 M391B2873FH0-C(F8/H9/K0*) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now
2GB 1.5V 256Mx72 M391B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
M391B5773FH0-C(F8/H9/K0*) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now
4GB 1.5V 512Mx72 M391B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
8GB 1.5V 1024Mx72 M391B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
1GB 1.35V 128Mx72 M391B2873FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now
2GB 1.35V 256Mx72 M391B5673FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
M391B5773FH0-Y(F8/H9/K0*) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now
4GB 1.35V 512Mx72 M391B5273CH0-Y(F8/H9/K0*) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
8GB 1.35V 1024Mx72 M391B1G73AH0-Y(F8/H9/K0*) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now
NOTES: F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
* K0 (1600Mbps) available in ES only
62H 2010 www.samsung.com/semi/dramDDR3 & DDR2 SDRAM
DDR2 SDRAM REGISTERED MODULES
Density Organization Part Number Composition Compliance Speed (Mbps) Register Rank Production
1GB 128Mx72 M393T2863FBA-C(E6/F7) (128M x8)*9 Lead free 667/800 Y 1 Now
2GB 256Mx72 M393T5660FBA-C(E6/F7) (256M x4)*18 Lead free 667/800 Y 1 Now
M393T5663FBA-C(E6/E7) (128M x8)*18 Lead free 667/800 Y 2 Now
4GB 512Mx72 M393T5160FBA-C(E6/F7) (256M x4)*36 Lead free 667/800 Y 2 Now
NOTES: E6=PC2-5300 (DDR2-667 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
E7=PC2-6400 (DDR2-800 @ CL=5)
Voltage = 1.8V
DDR2 SDRAM VLP REGISTERED MODULES
Density Organization Part Number Composition Compliance Speed (Mbps) Register Rank Production
2GB 256Mx72 M392T5660FBA-CE6 (256M x4)*18 Lead free 667 Y 1
DDR3 SDRAM COMPONENTS
Density Voltage Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production
1Gb 1.5V 256M x4 K4B1G0446F-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now
128M x8 K4B1G0846F-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now
2Gb 1.5V
512M x4 K4B2G0446C-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now
256M x8 K4B2G0846C-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now
128M x16 K4B2G1646C-HC(F8/H9/K0*/MA*/NB*) 96 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x13.3mm Now
1Gb 1.35V 256M x4 K4B1G0446F-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now
128M x8 K4B1G0846F-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now
2Gb 1.35V 512M x4 K4B2G0446C-HC(F8/H9) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333 7.5x11mm Now
256M x8 K4B2G0846C-HC(F8/H9/K0*) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now
NOTES: F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
MA = DDR3-1866 (13-13-13)
NB = DDR3-2133 (14-14-14)
* K0, MA, and NB are available in ES only
DDR3 SDRAM SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
1GB 1.5V 128Mx64 M471B2873FHS-C(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
2GB 1.5V 256Mx64 M471B5673FH0-C(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
M471B5773FHS-C(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
4GB 1.5V 512Mx64 M471B5273CH0-C(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
8GB 1.5V 1024Mx64 M471B1G73AH0-C(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
1GB 1.35V 128Mx64 M471B2873FHS-Y(F8/H9/K0*) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
2GB 1.35V 256Mx64 M471B5673FH0-Y(F8/H9/K0*) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
M471B5773FHS-Y(F8/H9/K0*) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now
4GB 1.35V 512Mx64 M471B5273CH0-Y(F8/H9/K0*) 2Gb (256M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
8GB 1.35V 1024Mx64 M471B1G73AH0-Y(F8/H9/K0*) 4Gb (512M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now
NOTES: F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
* K0 (1600Mbps) available in ES only
72H 2010www.samsung.com/semi/dram DDR2 SDRAM
DRAM
DDR2 SDRAM FULLY BUFFERED MODULES
Density Organization Part Number Composition Compliance Speed (Mbps) Voltage Rank Production
2GB 256Mx72 M395T5663FB4-CE68 (128M x8)*18 Lead free 667 1.8V 2 Now
4GB 512Mx72 M395T5160FB4-CE68 (256M x4)*36 Lead free 667 1.8V 2 Now
512Mx72 M395T5163FB4-CE68 (128M x8)*36 Lead free 667 1.8V 4 Now
NOTES: E6 = PC2-5300 (DDR2-667 @ CL=5)
AMB = IDT L4
Voltage = 1.8V (AMB Voltage = 1.5V)
DDR2 SDRAM UNBUFFERED MODULES
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx64 M378T2863FBS-C(E6/F7/E7) (128M x8)*8 Lead free 667/800 1 Now
2GB 256Mx64 M378T5663FB3-C(E6/F7/E7) (128M x8)*16 Lead free 667/800 2 Now
NOTES: E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM UNBUFFERED MODULES (ECC)
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx72 M391T2863FB3-C(E6/F7) (128Mx8)*9 Lead free 667/800 1 Now
2GB 256Mx64 M391T5663FB3-C(E6/F7) (128Mx8)*18 Lead free 667/800 2 Now
NOTES: E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM SODIMM MODULES
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx64 M470T2863FB3-C(E6/F7/E7) (64Mx16)*8 Lead free 667/800 2 Now
2GB 256Mx64 M470T5663FB3-C(E6/F7/E7) (128M x8)*8 Lead free 667/800 2 Now
NOTES: E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM COMPONENTS
Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production
256Mb 16Mx16 K4T56163QN-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
512Mb
128M x4 K4T51043QI-HC(E6/F7/E7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now
64M x8 K4T51083QI-HC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now
32M x16 K4T51163QI-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
128M x4 K4T51043QJ-HC(E6/F7/E7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Q3
64M x8 K4T51083QJ-HC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Q3
32M x16 K4T51163QJ-HC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Q3
1Gb
256M x4 K4T1G044QF-BC(E6/F7/E7) 68-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now
128M x8 K4T1G084QF-BC(E6/F7/E7/F8) 68-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now
64M x16 K4T1G164QF-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
NOTES: E6=DDR2-667 (5-5-5)
F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5)
F8=DDR2-1066 (7-7-7)
Voltage = 1.8V
82H 2010 www.samsung.com/semi/dramDDR
DDR SDRAM COMPONENTS
Density Organization Part Number # Pins - Package Speed (Mbps)
256Mb
64Mx4 K4H560438N-LCB3/B0 66-TSOP 266/333
32Mx8 K4H560838N-LCCC/B3 66-TSOP 333/400
16Mx16 K4H561638N-LCCC/B3 66-TSOP 333/400
512Mb
128Mx4 K4H510438G-LCB3/B0 66-TSOP 266/333
K4H510438G-HCCC/B3 60-FBGA 333/400
64Mx8 K4H510838G-LCCC/B3 66-TSOP 333/400
K4H510838G-HCCC/B3 60-FBGA 333/400
32Mx16 K4H511638G-LCCC/B3 66-TSOP 333/400
128Mb 8Mx16 K4H281638O-LCCC 66-TSOP 400
NOTES: B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
DDR SDRAM 1U REGISTERED MODULES
Density Organization Part Number Composition Speed (Mbps)
1GB 128Mx72 M312L2920GH3-CB3 (128Mx4)*18 333/400
2GB 256Mx72 M312L5720GH3-CB3 (128Mx4)*36 333/400
NOTES: B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
Type: 184-pin
DDR DRAM SODIMM MODULES
Density Organization Part Number Composition Speed (Mbps)
512MB 64Mx64 M470L6524GL0-CB300 (32M x 16)*8 333
NOTES: B0 = DDR266 (133MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
92H 2010www.samsung.com/semi/dram SDRAM, RDRAM & Graphics DRAM Components
DRAM
SDRAM COMPONENTS
Density Organization Part Number # Pins - Package Speed (Mbps) Refresh Remarks
64Mb 8Mx8 K4S640832N-LC75000 54-TSOP 133 4K EOL with no replacement
4Mx16 K4S641632N-LC(L)(75/60)000 54-TSOP 133/166 4K EOL with no replacement
128Mb 16Mx8 K4S280832O-LC(L)75000 54-TSOP 133 4K
8Mx16 K4S281632O-LC(L)(75/60)000 54-TSOP 133/166 4K
256Mb
64Mx4 K4S560432N-LC(L)75000 54-TSOP 133 8K
32Mx8 K4S560832N-LC(L)75000 54-TSOP 133 8K
16Mx16 K4S561632N-LC(L)(75/60)000 54-TSOP 133/166 8K
512Mb
128Mx4 K4S510432D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement
64Mx8 K4S510832D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement
32Mx16 K4S511632D-UC(L)(75)000 54-TSOP 133 8K EOL with no replacement
NOTES: L = Commercial Temp., Low Power
For Industrial Temperature, check with SSI Marketing
Banks: 4
All products are Lead Free
Voltage: 3.3V
Speed: PC133 (133MHz CL=3/PC100 CL2)
RDRAM COMPONENTS
Density Organization Part Number Speed (Mbps) # Pins-Package Refresh Note
288M x18 K4R881869I-DCT9000 1066 92-FBGA 16K/32ms EOL in Aug'10
NOTES: All products are lead free
GRAPHICS DRAM COMPONENTS
Type Density Organization Part Number Package VDD/VDDQ Speed Bin (MHz) Status
GDDR5 1Gb 32Mx32 K4G10325FE-HC(1) 170-FBGA 1.5/1.5V 1800/2000/2500
GDDR3
1Gb 32Mx32 K4J10324KE-HC(1) 136-FBGA 1.8V/1.8V 700/800/1000/1200
512Mb 16Mx32
K4J52324QH-HC(1) 136-FBGA 1.8/1.8V 700/800 EOL Mar '10
K4J52324QH-HJ(1) 136-FBGA 1.9/1.9V 1000 EOL Mar '10
K4J52324QH-HJ(1) 136-FBGA 2.05/2.05V 1200 EOL Mar '10
GDDR2 1Gb 64Mx16 K4N1G164QE-HC(1) 84-FBGA 1.8/1.8V 400/500 EOL Mar '10
512Mb 32Mx16 K4N51163QG-HC(1) 84-FBGA 1.8/1.8V 400/500 EOL Mar '10
GDDR1 128Mb 4Mx32 K4D263238K-VC(1) 144-FBGA 2.5/2.5V 200/250 CuSmpl Oct '09
K4D263238K-UC(1) 100-TQFP 2.5/2.5V 200/250
8Mx16 K4D261638K-LC(1) 66-TSOPII 2.5/2.5V 200/250 EOL Sep '10
NOTES: Package:
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA (Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA (Lead Free)
H: FBGA (Halogen Free & Lead Free)
E: 100 FBGA (Halogen Free & Lead Free)
(1) Speeds (clock cycle - speed bin):
04: 0.4ns (2500MHz)
05: 0.5ns (2000MHz)
5C: 0.555 (1800MHz)
07: 0.71ns (1400MHz)
08: 0.83ns (1200MHz)
09: 0.90ns (1100MHz)
1A: 1ns (1000MHz)
11: 1.1ns (900MHz)
12: 1.25ns (800MHz)
14: 1.429ns (700MHz)
16: 1.667ns (600MHz)
20: 2.0ns (500MHz)
22: 2.2ns (450MHz)
25: 2.5ns (400MHz)
2A: 2.86ns (350MHz)
33: 3.3ns (300MHz)
40: 4.0ns (240MHz)
50: 5.0ns (200MHz)
10 2H 2010 www.samsung.com/semi/dram Mobile SDR/DDR & LPDDR2
MOBILE-SDR/DDR
Density Type Organization Part Number Package Power Production
256Mb
MSDR 16Mx16 K4M56163PN-BG(1) 54-FBGA 1.8V Now
8Mx32 K4M56323PN-HG(1) 90-FBGA 1.8V Now
MDDR 16Mx16 K4X56163PN-FG(1) 60-FBGA 1.8V Now
8Mx32 K4X56323PN-8G(1) 90-FBGA 1.8V Now
512Mb
MSDR 32Mx16 K4M51163PI-BG(1) 54-FBGA 1.8V Now
16Mx32 K4M51323PI-HG(1) 90-FBGA 1.8V Now
MDDR 32Mx16 K4X51163PI-FG(1) 60-FBGA 1.8V Now
16Mx32 K4X51323PI-8G(1) 90-FBGA 1.8V Now
1Gb MDDR
64Mx16 K4X1G163PE-FG(1) 60-FBGA 1.8V Now
32Mx32 K4X1G323PE-8G(1) 90-FBGA 1.8V Now
64Mx16 K4X1G163PF-FG(1) 60-FBGA 1.8V MP Q1'11
32Mx32 K4X1G323PF-8G(1) 90-FBGA 1.8V MP Q1'11
2Gb MDDR 128Mx16 K4X2G163PC-FG(1) 60-FBGA 1.8V Now
64Mx32 K4X2G323PC-8G(1) 90-FBGA 1.8V Now
4Gb MDDR
x32 (2CS, 2CKE) K4X4G303PB-AG(1) 168-FBGA, 12x12 PoP, DDP 1.8V Now
x32 (2CS, 2CKE) K4X4G303PB-AG(1) 168-FBGA, 12x12 PoP, DDP 1.8V Now
x32 (2CS, 2CKE) K4X4G303PB-7G(1) 240-FBGA, 14x14 PoP, DDP 1.8V Now
LPDDR2
Density Type Organization Part Number Package Power Production
512Mb LPDDR2 1CH x32 K4P51323EI-AG(1) 168-FBGA, 12x12 PoP 1.8V Now
1Gb LPDDR2 1CH x32 K4P1G324EE-AG(1) 168-FBGA, 12x12 PoP 1.2V Now
2Gb LPDDR2
1CH x32 K4P2G324EC-AG(1) 168-FBGA, 12x12 PoP 1.2V Now
2CH x32/ch K3PE3E300M-XG(1) 216-FBGA, 12x12 PoP 1.2V Now
K3PE3E300A-XG(1) 240-FBGA, 14x14 PoP 1.2V Now
4Gb LPDDR2
1CH x32 K4P4G304EC-AG(1) 168-FBGA, 12x12 PoP, DDP 1.2V Now
2CH x32/ch
K3PE4E400M-XG(1) 216-FBGA, 12x12 PoP, DDP 1.2V Now
K3PE4E400M-XG(1) 216-FBGA, 12x12 PoP, DDP 1.2V Now
K3PE4E400A-XG(1) 240-FBGA, 14x14 PoP, DDP 1.2V Now
NOTES: All products offered at Extended, Low, i-TCSR & PASR & DS (Temp, Power) (1) Speed:
Mobile-SDR
60: 166MHz, CL3
75: 133MHz, CL3
Mobile-DDR
D8: 200MHz, CL3
C6: 166MHz, CL3
LPDDR2
C0: 667Mbps
C1: 800Mbps
112H 2010www.samsung.com/semi/dram DRAM Ordering Information
DRAM
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: SDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: SDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x2
04: x4
06: x4 Stack (Flexframe)
07: x8 Stack (Flexframe)
08: x8
15: x16 (2CS)
16: x16
26: x4 Stack (JEDEC Standard)
27: x8 Stack (JEDEC Standard)
30: x32 (2CS, 2CKE)
31: x32 (2CS)
32: x32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
8. Revision
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
9. Package Type
DDR SDRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogen-free)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA(Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA(Lead Free)
H: FBGA(Hologen Free & Lead Free)
E: 100 FBGA(Hologen Free & Lead Free)
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
12 2H 2010 www.samsung.com/semi/dramDRAM Ordering Information
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded / Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
132H 2010 DRAM Ordering Informationwww.samsung.com/semi/dram
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x72 184pin Low Profile Registered DIMM
63: x63 PC100 / PC133 μSODIMM with SPD for
144pin
64: x64 PC100 / PC133 SODIMM with SPD for
144pin (Intel/JEDEC)
66: x64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x64 184pin Unbuffered DIMM
70: x64 200pin Unbuffered SODIMM
71: x64 204pin Unbuffered SODIMM
74: x72 /ECC Unbuffered DIMM with SPD for
168pin (Intel/JEDEC)
77: x72 /ECC PLL + Register DIMM with SPD for
168pin (Intel PC100)
78: x64 240pin Unbuffered DIMM
81: x72 184pin ECC unbuffered DIMM
83: x72 184pin Registered DIMM
90: x72 /ECC PLL + Register DIMM
91: x72 240pin ECC unbuffered DIMM
92: x72 240pin VLP Registered DIMM
93: x72 240pin Registered DIMM
95: x72 240pin Fully Buffered DIMM with SPD for
168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/ 64ms Ref., 4Banks & SSTL-2
2: 4K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8. Component Revision
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
9. Package
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA(Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
MODULE DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12 13
M X XX T XX X X X X X X XX X
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Component Revision
DRAM
14 2H 2010 www.samsung.com/semi/ashSLC Flash
SLC FLASH
Family Density Part Number Package Type Org. Vol(V)
MOQ
StatusTray T/R
-xxxx0xx -xxx0Txx
16Gb Based
16Gb Mono K9FAG08U0M-HCB0 BGA X8 3.3 960 1000 E/S
K9FAG08S0M-HCB0 BGA X8 1.8 960 1000 E/S
32Gb DDP K9KBG08U1M-HCB0 BGA X8 3.3 960 1000 E/S
K9KBG08S1M-HCB0 BGA X8 1.8 960 1000 E/S
64Gb QDP K9WCG08U5M-HCB0 BGA X8 3.3 960 1000 E/S
K9WCG08S5M-HCB0 BGA X8 1.8 960 1000 E/S
128Gb ODP K9QDG08U5M-HCB0 BGA X8 3.3 960 1000 E/S
K9QDG08S5M-HCB0 BGA X8 1.8 960 1000 E/S
8Gb Based
64Gb DSP K9NCG08U5M-PCK0 TSOP1 x8 3.3 960 1000 M/P
32Gb QDP K9WBG08U1M-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9WBG08U1M-PIB0 TSOP1 x8 3.3 960 1000 M/P
16Gb DDP K9KAG08U0M-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9KAG08U0M-PIB0 TSOP1 x8 3.3 960 1000 M/P
8Gb Mono K9F8G08U0M-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F8G08U0M-PIB0 TSOP1 x8 3.3 960 1000 M/P
4Gb Based
16Gb QDP
K9WAG08U1D-SCB0 TSOP1 HF&LF x8 3.3 960 1000 C/S
K9WAG08U1D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S
K9WAG08U1B-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9WAG08U1B-PIB0 TSOP1 x8 3.3 960 1000 M/P
K9WAG08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P
8Gb DDP
K9K8G08U0D-SCB0 TSOP1 HF&LF X8 3.3 960 1000 C/S
K9K8G08U0D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S
K9K8G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9K8G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P
K9K8G08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P
4Gb Mono
K9F4G08U0D-SCB0 TSOP1 HF & LF x8 3.3 960 1000 C/S
K9F4G08U0D-SIB0 TSOP1 HF& LF X8 3.3 960 1000 C/S
K9F4G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F4G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P
K9F4G08U0B-KIB0 ULGA HF & LF x8 3.3 960 2000 M/P
2Gb Based 2Gb Mono
K9F2G08U0C-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S
K9F2G08U0C-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S
K9F2G08U0B-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F2G08U0B-PIB0 TSOP1 x8 3.3 960 1000 M/P
1Gb Based 1Gb Mono
K9F1G08U0D-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S
K9F1G08U0D-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S
K9F1G08U0C-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F1G08U0C-PIB0 TSOP1 x8 3.3 960 1000 M/P
512Mb Based 512Mb Mono
K9F1208U0C-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F1208U0C-PIB0 TSOP1 x8 3.3 960 1000 M/P
K9F1208R0C-JIB0 63 FBGA(8.5x13) x8 1.8 1120 - M/P
K9F1208U0C-JIB0 63 FBGA(8.5x13) x8 3.3 1120 - M/P
256Mb Based 256Mb Mono
K9F5608U0D-PCB0 TSOP1 x8 3.3 960 1000 M/P
K9F5608U0D-PIB0 TSOP1 x8 3.3 1000 1000 M/P
K9F5608R0D-JIB0 63 FBGA(9x11) x8 1.8 1280 2000 M/P
K9F5608U0D-JIB0 63 FBGA(9x11) x8 3.3 1280 2000 M/P
Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free
152H 2010www.samsung.com/semi/ash MLC Flash, SD/MicroSD Flash Cards & SSD
FLASH
SD and MicroSD FLASH CARDS
Application Density Controller
SD Card
2GB
Contact your local Samsung rep for availability and ordering information
4GB
8GB
16GB
MicroSD Card
2GB
Contact your local Samsung rep for availability and ordering information
4GB
8GB
16GB
32GB
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
SOLID STATE DRIVES (SSD)
Interface Size Connector Controller Comp. Capacity Part Number
SATA II (Native) 2.5" Thin SATA
MAX 16Gb
64GB MZ5PA064HMCD-0A000
128GB MZ5PA128HMCD-0A000
256GB MZ5PA256HMDR-0A000
TMDDR Controller 32Gb Toggle-Mode DDR NAND 512GB Contact Sales
SATA II (Native) mSATA mSATA MAX 16Gb
32GB MZMPA032HMCD-00000
64GB MZMPA064HMDR-00000
128GB MZMPA128HMFU-00000
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
MLC FLASH
Type Family Density Technology Part Number Package
Type Org. Vol(V)
MOQ
CommentsTray T/R
-xxxx0xx -xxx0Txx
2bit
32Gb Based
32Gb Mono 27nm K9HDG08U1A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
64Gb DDP 27nm K9LCG08U0A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
128Gb QDP 27nm K9GBG08U0A-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
16Gb Based
16Gb Mono 32nm K9GAG08U0E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
32Gb DDP 32nm K9LBG08U0E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
64Gb QDP 32nm K9HCG08U1E-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
8Gb Based 8Gb Mono 32nm K9G8G08U0C-SCB0 TSOP - Lead free & Halogen free x8 3.3 960 1000
3bit 32Gb Based
32Gb mono 32nm K9CDG08U5A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to
2xnm Q3'10
64Gb DDP 32nm K9BCG08U1A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to
2xnm Q3'10
128Gb QDP 32nm K9ABG08U0A-MCB0001 LGA - Lead free & Halogen free x8 3.3 840 - Moving to
2xnm Q3'10
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
16 2H 2010 www.samsung.com/semi/ashFlash Ordering Information
1. Memory (K)
2. NAND Flash : 9
3. Small Classification
(SLC : Single Level Cell, MLC : Multi Level Cell)
7 : SLC moviNAND
8 : MLC moviNAND
F : SLC Normal
G : MLC Normal
H : MLC QDP
K : SLC DDP
L : MLC DDP
M : MLC DSP
N : SLC DSP
P : MLC 8 Die Stack
Q : SLC 8 Die Stack
S : SLC Single SM
T : SLC SINGLE (S/B)
U : 2 Stack MSP
W : SLC 4 Die Stack
4~5. Density
12 : 512M
56 : 256M
1G : 1G
2G : 2G
4G : 4G
8G : 8G
AG : 16G BG :
32G CG : 64G
DG : 128G
EG : 256G
LG : 24G
NG : 96G
ZG : 48G
00 : NONE
6~7. Organization
00 : NONE
08 : x8
16 : x16
8. Vcc
A : 1.65V~3.6V B : 2.7V (2.5V~2.9V)
C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V)
E : 2.3V~3.6V R : 1.8V (1.65V~1.95V)
Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V
U : 2.7V~3.6V V : 3.3V (3.0V~3.6V)
W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE
9. Mode
0 : Normal
1 : Dual nCE & Dual R/nB
3 : Tri /CE & Tri R/B
4 : Quad nCE & Single R/nB
5 : Quad nCE & Quad R/nB
9 : 1st block OTP
A : Mask Option 1
L : Low grade
10. Generation
M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
11. “ ----”
12. Package
A : COB
B : FBGA (Halogen-Free, Lead-Free)
C : CHIP BIZ D : 63-TBGA
F : WSOP (Lead-Free) G : FBGA
H : TBGA (Lead-Free)
I : ULGA (Lead-Free) (12*17)
J : FBGA (Lead-Free)
L : ULGA (Lead-Free) (14*18)
M : TLGA N : TLGA2
P : TSOP1 (Lead-Free)
Q : TSOP2 (Lead-Free)
S : TSOP1 (Halogen-Free, Lead-Free)
T : TSOP2 U : COB (MMC)
V : WSOP W : Wafer
Y : TSOP1 Z : WELP (Lead-Free)
13. Temp
C : Commercial I : Industrial
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
14. Customer Bad Block
B : Include Bad Block
D : Daisychain Sample
L : 1~5 Bad Block
N : ini. 0 blk, add. 10 blk
S : All Good Block
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
15. Pre-Program Version
0 : None
Serial (1~9, A~Z)
FLASH PRODUCT ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
K 9 X X X X X X X X - X X X X
SAMSUNG Memory
NAND Flash
Small Classication
Density
Density
Organization
Organization
Vcc
Pre-Program Version
Customer Bad Block
Temp
Package
---
Generation
Mode
172H 2010www.samsung.com/semi/ash NtRAM & Late Write RR SRAM
SRAM
NtRAM
Type Density Organization Part
Number
Package Operating
Mode
Vdd
(V)
Access Time
tCD (ns)
Speed
tCYC (MHz)
I/O Voltage
(V)
Production
Status
NtRAM
72Mb 2Mx36 K7N643645M 100-TQFP, 165FBGA SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production
4Mx18 K7N641845M 100-TQFP, 165FBGA SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production
36Mb
1Mx36 K7N323635C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production
2Mx18 K7N321835C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production
1Mx36 K7M323635C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production
2Mx18 K7M321835C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production
18Mb
1Mx18 K7N161831B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production
512Kx36 K7N163631B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production
1Mx18 K7M161835B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production
512Kx36 K7M163635B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production
8Mb
256Kx36 K7N803601B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs
512Kx18 K7N801801B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs
256Kx36 K7N803609B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs
512Kx18 K7N801809B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs
256Kx36 K7N803645B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs
512Kx18 K7N801845B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs
256Kx36 K7N803649B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs
512Kx18 K7N801849B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs
512Kx18 K7M801825B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs
256Kx36 K7M803625B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs
4Mb 128Kx36 K7N403609B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs
256Kx18 K7N401809B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs
SPB and FT 4Mb 256Kx18 K7B401825B 100-TQFP SB 3.3 6.5 133 3.3, 2.5 Not for new designs
NOTES: All TQFP products are lead free
NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz
NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns
Late-Write RR SRAM
Density Organization Part Number Package Operating
Mode
Vdd (V) Access Time
tCD (ns)
Speed tCYC
(MHz)
I/O Voltage (V) Production Status
32Mb 1Mx36 K7P323674C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production
2Mx18 K7P321874C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production
8Mb
256Kx36 K7P803611B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production
512Kx18 K7P801811B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production
256Kx36 K7P803666B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production
512Kx18 K7P801866B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production
18 2H 2010 www.samsung.com/semi/sramDDR I / II / II+
DDR SYNCHRONOUS SRAM
Type Density Organization Part
Number
Package Vdd
(V)
Access Time
tCD (ns)
Cycle Time
(MHz)
I/O Voltage
(V)
Production
Status
Comments
DDR
16Mb 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production
1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production
8Mb 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs
512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs
DDR
II CIO/
SIO
72Mb
4Mx18
K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
K7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
2Mx36
K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
K7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
36Mb
2Mx18
K7I321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B
K7I321884C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B
K7J321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B
1Mx36
K7I323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B
K7I323684C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B
K7J323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B
18Mb
1Mx18
K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
K7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
512Kx36
K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
K7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
DDR II+
CIO
36Mb
2Mx18
K7K3218T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B,
2 clocks latancy
K7K3218U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B,
2.5 clocks latancy
1Mx36
K7K3236T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B,
2 clocks latancy
K7K3236U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B,
2.5 clocks latancy
18Mb
1Mx18
K7K1618T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B,
2 clocks latancy
K7K1618U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B,
2.5 clocks latancy
512Kx36
K7K1636T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B,
2 clocks latancy
K7K1636U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B,
2.5 clocks latancy
NOTES: 2B = Burst of 2
4B = Burst of 4
SIO = Separate I/O
CIO = Common I/O
For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
192H 2010www.samsung.com/semi/sram QDR I / II / II+
SRAM
QDR SYNCHRONOUS SRAM
Type Density Organization Part
Number
Package Vdd
(V)
Access Time
tCD (ns)
Cycle Time I/O Voltage
(V)
Production
Status
Comments
QDR I 18Mb
1Mx18 K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B
K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B
512Kx36 K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B
K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B
QDR II
72Mb
8Mx9 K7R640982M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
4Mx18 K7R641882M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
K7R641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B
2Mx36 K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
K7R643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B
36Mb
4Mx9 K7R320982C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B
2Mx18 K7R321882C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B
K7R321884C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B
1Mx36 K7R323682C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B
K7R323684C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B
18Mb
2Mx9 K7R160982B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
1Mx18 K7R161882B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
K7R161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B
512Kx36 K7R163682B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
K7R163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B
QDR II+
36Mb
1Mx36
K7S3236T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II +
4B, 2 clocks
latancy
K7S3236U4C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production
QDR II + 4B,
2.5 clocks
latancy
2Mx18
K7S3218T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II +
4B, 2 clocks
latancy
K7S3218U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II + 4B,
2.5 clocks
latancy
18Mb
1Mx18 K7S1618T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II +
4B, 2 clocks
latancy
512Kx36 K7S1636U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II + 4B,
2.5 clocks
latancy
NOTES: For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4
For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit
For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended
For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
20 2H 2010 www.samsung.com/semi/sramSRAM Ordering Information
1. Memory (K)
2. Sync SRAM: 7
3. Small Classification
A: Sync Pipelined Burst
B: Sync Burst
D: Double Data Rate
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
S: Quad Data Rate II+
4~5. Density
80: 8M 16: 18M
40: 4M 32: 36M
64: 72M
6~7. Organization
08: x8 09: x9
18: x18 32: x32
36: x36
8~9. Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE
01: 3.3V,LVTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
12: 3.3V,HSTL,R-L
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
23: 3.3V,LVTTL,R-L
25: 3.3V,LVTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
45: 2.5V,LVTTL,2E2D
49: 2.5V,LVTTL,Hi SPEED
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
74: 1.8V,2.5V,HSTL,All
82: 1.8V,HSTL,Burst2
84: 1.8V,HSTL,Burst4
88: 1.8V,HSTL,R-R
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
11. “--”
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
E: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ
W: WAFER
13. Temp, Power
COMMON (Temp,Power)
0: NONE,NONE (Containing of error
handling code)
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
Sync Burst,Sync Burst + NtRAM
< Mode is R-L > (Clock Accesss Time)
65: 6.5ns 70: 7ns
75: 7.5ns 80: 8ns
85: 8.5ns
Other Small Classification (Clock Cycle Time)
10: 100MHz 11: 117MHz
13: 133MHz 14: 138MHz
16: 166MHz 20: 200MHz
25: 250MHz
26: 250MHz(1.75ns) 27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz 37: 375MHz
40: 400MHz(t-CYCLE) 42: 425MHz
45: 450MHz
50: 500MHz (except Sync Pipe)
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL (In Mask ROM, divided
into TRAY, AMMO packing separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray, Tube, Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
SYNCHRONOUS SRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
K 7 X X X X X X X X - X X X X X
SAMSUNG Memory
Sync SRAM
Small Classication
Density
Density
Organization
Organization
Vcc, Interface, Mode
Packaging Type
Speed
Speed
Temp, Power
Package
---
Generation
Vcc, Interface, Mode
212H 2010 MCPwww.samsung.com/semi/mcp
MCP
MCP: NAND/DRAM
Memory NAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package
NAND & DRAM
1Gb
256Mb (x16,x32) 3.0V/1.8V - 1.8V 107/137FBGA 152FBGA
512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA 119/152FBGA
1Gb (x32) 1.8V - 1.8V 137FBGA -
2Gb
512Mb (x16,x32) 1.8V - 1.8V 107/137FBGA 119/152FBGA
1Gb (x16,x32) 1.8V - 1.8V 107/137FBGA 152/160/168FBGA
4Gb 1Gb (x32) 2.7V - 1.8V 137FBGA -
MCP: OneNAND/DRAM
Memory OneNAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package
OneNAND & DRAM
512Mb
256Mb (x32) 3.3V/1.8V - 1.8V 188FBGA 152FBGA
512Mb (x16,x32) 1.8V - 1.8V 167/202FBGA 152FBGA
1Gb
512Mb (x16,x32) 1.8V - 1.8V 167/202FBGA 168FBGA
1Gb (x32) 1.8V - 1.8V - 168FBGA
2Gb
512Mb (x16,x32) 1.8V - 1.8V - 152/160/168FBGA
1Gb (x16,x32) 1.8V - 1.8V 167/202FBGA 152/160/168FBGA
2Gb (x32) 1.8V - 1.8V - 152/168FBGA
4Gb 1Gb (x16) 1.8V - 1.8V 202FBGA -
MCP: Flex-OneNAND/DRAM
Memory Flex-OneNAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package
Flex-OneNAND
& DRAM 8Gb 2Gb (x32) 1.8V - 1.8V 202FBGA -
MCP: OneNAND/DRAM/OneNAND
Memory Flex-OneNAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package PoP Package
OneNAND & DRAM
& OneDRAM 2Gb 1Gb (x16) 1.8V - 1.8V 216FBGA
22 2H 2010 www.samsung.com/semi/mcpMCP
MCP: NOR/DRAM
Memory NOR Density DRAM Density (Org.) Voltages (NOR-DRAM) Package Remark
NOR & DRAM 512Mb 128Mb (x16) 1.8V - 1.8V 103FBGA
256Mb (x16) 1.8V - 1.8V 103FBGA
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
MCP: NOR/UtRAM
Memory NOR Density UtRAM Density (Org.) Voltages (NOR-UtRAM) MCP Package Remark
NOR & UtRAM
512Mb 128Mb 1.8V - 1.8V 107FBGA
256Mb
128Mb 1.8V - 1.8V 107FBGA
1.8V - 1.8V 56FBGA
128Mb
64Mb 1.8V - 1.8V 84/88FBGA
32Mb 1.8V - 1.8V 84/88FBGA
MCP: moviNAND/NAND/DRAM
Memory movi & NAND Density DRAM Density (Org.) Voltages (NAND-DRAM) MCP Package Remark
moviNAND &
NAND & DRAM
512Mb
256Mb(x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA
512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA
1Gb
256Mb (x16,x32) 3.0V/1.8V - 1.8V 107/137FBGA
512Mb (x16,x32) 2.7V/1.8V - 1.8V 107/137FBGA
1Gb (x32) 1.8V - 1.8V 137FBGA
2Gb
512Mb (x16,x32) 1.8V - 1.8V 107/137FBGA
1Gb (x16,x32) 1.8V - 1.8V 107/137FBGA
4Gb 1Gb (x32) 2.7V - 1.8V 137FBGA
232H 2010www.samsung.com/semi/fusion Fusion Memory
FUSION
OneDRAM™
OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.
Density Part Number Package Type Org. Vol (V) Temp. Speed
512Mb
KJA51Z23PC-AAO 216FBGA (14x14)
A-port: x16 (SDR/DDR)
1.8V extended 133MHz
B-port: x16 (SDR/DDR)
KJA51Y23PC-AAO 152FBGA (14x14)
A-port: x16 (SDR/DDR)
B-port: x16 (SDR/DDR)
1Gb
KJA1GW25PD-EAO
240FBGA (14x14)
A-port: x32SDR
1.8V extended 166MHz
B-port: x32DDR"
KJA1GZ45PD-EAO
A-port: x16DDR
B-port: x32DDR"
KJA1GZ45PD-EAO
A-port: x16DDR
B-port: x16DDR"
KJA1GY25PD-EAO
A-port: x16SDR
B-port: x32DDR"
Please contact your local Samsung sales representative for the latest product offerings.
Note: All parts are lead free
moviNAND™
moviNAND combines high-density MLC NAND Flash with an MMC controller in a single chip that has an MMC interface. moviNAND delivers dense, cost-effectice storage for embedded applications.
Density Package Type Org. Vol (V) Remarks
2GB FBGA x8 1.8/3.3 MMC 4.3 & MMC 4.4
4GB FBGA x8 1.8/3.3
Contact your local Samsung rep for availability and
ordering information.
8GB FBGA x8 1.8/3.3
16GB FBGA x8 1.8/3.3
32GB FBGA x8 1.8/3.3
64GB FBGA x8 1.8/3.3
Please contact your local Samsung sales representative for the latest product offerings.
Note: All parts are lead free
24 2H 2010 www.samsung.com/semi/hddHard Disk Drives
3.5" Hard Disk Drives
Family Capacity (GB) RPM Interface Buffer Sector Model
F1DT
80 7200 SATA 3.0 Gbps 8 512 HD083GJ
80 7200 SATA 3.0 Gbps 16 512 HD084GJ
160 7200 SATA 3.0 Gbps 8 512 HD161GJ
160 7200 SATA 3.0 Gbps 16 512 HD162GJ
250 7200 SATA 3.0 Gbps 8 512 HD251HJ
250 7200 SATA 3.0 Gbps 16 512 HD252HJ
320 7200 SATA 3.0 Gbps 8 512 HD321HJ
320 7200 SATA 3.0 Gbps 16 512 HD322HJ
500 7200 SATA 3.0 Gbps 8 512 HD501IJ
500 7200 SATA 3.0 Gbps 16 512 HD502IJ
640 7200 SATA 3.0 Gbps 16 512 HD642JJ
750 7200 SATA-2 16 512 HD752LJ
750 7200 SATA 3.0 Gbps 32 512 HD753LJ
1 TB 7200 SATA 3.0 Gbps 16 512 HD102UJ
1 TB 7200 SATA 3.0 Gbps 32 512 HD103UJ
F2EG
500 5400 SATA 3.0 Gbps 16 512 HD502HI
1 TB 5400 SATA 3.0 Gbps 32 512 HD103SI
1.5 TB 5400 SATA 3.0 Gbps 32 512 HD154UI
F3
160 7200 SATA 3.0 Gbps 8 512 HD164GJ
250 7200 SATA 3.0 Gbps 8 512 HD254GJ
320 7200 SATA 3.0 Gbps 8 512 HD324HJ
160 7200 SATA 3.0 Gbps 16 512 HD163GJ
250 7200 SATA 3.0 Gbps 16 512 HD253GJ
320 7200 SATA 3.0 Gbps 16 512 HD323HJ
500 7200 SATA 3.0 Gbps 16 512 HD502HJ
750 7200 SATA 3.0 Gbps 32 512 HD754JJ
1TB 7200 SATA 3.0 Gbps 32 512 HD103SJ
F3EG
250 - SATA 3.0 Gbps 16 512 HD253GI
320 - SATA 3.0 Gbps 16 512 HD324HI
500 - SATA 3.0 Gbps 16 512 HD503HI
750 - SATA 3.0 Gbps 32 512 HD754JI
1TB - SATA 3.0 Gbps 32 512 HD105SI
1.5 TB - SATA 3.0 Gbps 32 512 HD153WI
2 TB - SATA 3.0 Gbps 32 512 HD203WI
F4
160 7200 SATA 3.0 Gbps 8 512 HD165GJ
160 7200 SATA 3.0 Gbps 16 512 HD166GJ
250 7200 SATA 3.0 Gbps 8 512 HD255GJ
250 7200 SATA 3.0 Gbps 16 512 HD255GJ
320 7200 SATA 3.0 Gbps 16 512 HD323HJ
252H 2010www.samsung.com/hdd Hard Disk Drives
STORAGE
2.5" Hard Disk Drives
Family Capacity (GB) RPM Interface Buffer Sector Model
M7E
160 5400 SATA 3.0 Gbps 8 512 HM161GI
250 5400 SATA 3.0 Gbps 8 512 HM251HI
320 5400 SATA 3.0 Gbps 8 512 HM321HI
500 5400 SATA 3.0 Gbps 8 512 HM501JI
640 5400 SATA 3.0 Gbps 8 512 HM641JI
M7
120 5400 SATA 3.0 Gbps 8 512 HM120JI
160 5400 SATA 3.0 Gbps 8 512 HM161JI
250 5400 SATA 3.0 Gbps 8 512 HM250II
320 5400 SATA 3.0 Gbps 8 512 HM320HI
400 5400 SATA 3.0 Gbps 8 512 HM400HI
500 5400 SATA 3.0 Gbps 8 512 HM500GI
MP4
250 7200 SATA 3.0 Gbps 16 512 HM250HJ
320 7200 SATA 3.0 Gbps 16 512 HM320HJ
500 7200 SATA 3.0 Gbps 16 512 HM500JJ
640 7200 SATA 3.0 Gbps 16 512 HM640JJ
MT2 750 5400 SATA 3.0 Gbps 8 512 HM750LI
1 TB 5400 SATA 3.0 Gbps 8 512 HM100UI
3.5" Enterprise RAID Drives
Family Capacity (GB) RPM Interface Buffer Sector Model
F1R
250 7200 SATA 3.0 Gbps 16 512 HE252HJ
320 7200 SATA 3.0 Gbps 16 512 HE322HJ
500 7200 SATA 3.0 Gbps 16 512 HE502IJ
640 7200 SATA 3.0 Gbps 16 512 HE642JJ
750 7200 SATA 3.0 Gbps 32 512 HE753LJ
1 TB 7200 SATA 3.0 Gbps 32 512 HE103UJ
F3R
250 7200 SATA 3.0 Gbps 16 512 HE253GJ
500 7200 SATA 3.0 Gbps 16 512 HE502HJ
750 7200 SATA 3.0 Gbps 32 512 HE754JJ
1 TB 7200 SATA 3.0 Gbps 32 512 HE103SJ
26 2H 2010 www.samsung.com/hddOptical Disk Drives
DVD-W
Interface Speed Type Loading Lightscribe Medel
SATA
DVD Write 22X H/H Tray X TS-H653G
DVD Write 20X H/H Tray X TS-H653H
DVD Write 20X H/H Tray X TS-H653J
PATA DVD Write 22X H/H Tray X TS-H662A / SH-S222A
SATA
DVD Write 22X H/H Tray X TS-H663C / SH-S223C
DVD Write 24X H/H Tray X TS-H663D / SH-S243D
DVD Write 22X H/H Tray O TS-H653R
DVD Write 16X H/H Tray O TS-H653T
PATA DVD Write 22X H/H Tray O TS-H662L / SH-S222L
SATA DVD Write 22X H/H Tray O TS-H663L / SH-S223L
DVD Write 24X H/H Tray O TS-H663N / SH-S243N
SATA DVD Write 8X
Slim
Tray
X
TS-L633B / SN-S083B
TS-L633C / SH-S083C
TS-L633F / SN-S083F
TS-L633J
O
TS-L633N / SN-S083N
TS-L633R / SN-S083R
TS-L633Y
Slot X TS-T633C / SN-T083C
O TS-T633P
Ultra Slim
Tray X TS-U633F
TS-U633J / SU-S083J
Slot X TS-D633A
TS-D633C
BD-COMBO
Interface Speed Type Loading Lightscribe Medel
SATA
BD ROM READ 8X H/H Tray X TS-HB33A / SH-B083A
O TS-HB33L / SH-B083L
BD ROM READ 12X H/H Tray X TS-HB43A / SH-B123A
O TS-HB43L / SH-B123L
BD-ROM READ 4X Slim Tray
X
TS-LB23A / SN-B043A
TS-LB23B
TS-LB23D
OTS-LB23L / SN-B043L
TS-LB23P
Slot O TS-TB23L
272H 2010
STORAGE
www.samsungodd.com Optical Disk Drives
DVD-W Slim External
Interface Speed Type Loading Lightscribe Medel
USB 2.0 DVD Write 8X
Slim Tray X SE-S084C
Ultra Slim Tray X SE-S084D
Slim Tray X SE-S084F
Slot O SE-T084P
DVD-ROM
Interface Speed Type Loading Lightscribe Medel
SATA
DVD 16X H/H Tray X TS-H353C / SH-D163J
DVD 8X Slim Tray X TS-L333B
TS-L333D
DVD 8X Utra Slim Tray X TS-U333A
DVD-W Loader
Interface Speed Type Loading Lightscribe Medel
PATA DVD 8X H/H Tray X TS-P632F
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of
publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences
resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products
or product specications with the intent to improve function or design at any time and without notice and is not
required to update this documentation to reect such changes. This publication does not convey to a purchaser of
semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes
no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does
Samsung assume any liability arising out of the application or use of any product or circuit and specically disclaims any
and all liability, including without limitation any consequential or incidental damages.
Copyright 2010. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co.,
Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates,
gures, diagrams and tables are subject to change at any time, without notice.
BR-10-ALL-001 Printed 07/10
Samsung Semiconductor, Inc.
3655 North First Street
San Jose, CA 95134-1713
www.samsung.com/us/business/components
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