TOSHIBA 28C5468 TENTATIVE VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC5468 Unit in mm 8.3MAX. : ea: 58 3140.1 e High Transition Frequency : fp = 400 MHz (Typ.) of =z al (Vcr = 10V, I = 50mA) 4 ae CE e DAVE 3} Bs @ Low Collector Output Capacitance : Cobh = 3 pF (Typ.) a = (VcB = 30 V) ; | e High Voltage > VCEO = 120 V 4.0MAX. | nf ! romax. If Tit z MAXIMUM RATINGS (Tc = 25C) 0.75 20.15 eS CHARACTERISTIC SYMBOL | RATING UNIT Collector-Base Voltage VCBO 120 Vv Collector-Emitter Voltage VCEO 120 Vv Emitter-Base Voltage VEBO 5 Vv 5 I 3 in Collector Current DC Cc o A = 1. EMITTER Pulse Icp 0.5 2. COLLECTOR Base Current Ip 0.1 A 3. BASE Collector Power Ta = 25C 1.5 JEDEC aeer 3 Po WwW Dissipation Te = 25C 8 JEITA Junction Temperature Tj 150 Cc TOSHIBA 9-8H1A Storage Temperature Range Tstg 55~150 C - Weight : 0.82 g (Typ.) ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp = 120V, In = 0 100 | vA Emitter Cut-off Current IEBO VEB = 5V, Ic =0 1] pA Collector-Base Breakdown Voltage | V (BR) CBO |Ic = 1 mA, Ip = 0 120| Vv Collector-Emitter Breakdown Voltage V (BR) CEO |Ic = 10 mA, Ip = 0 120) ~ Vv . hFE (1) | VCE = 10V, Ic = 50mA 40; 240 DC Current Gain hyg(2) |VcE =10V,I=200mA | _25| | Collector-Emitter Saturation Voltage VCE (sat) |Ic = 50mA, Ip = 5mA 1.0 Vv Base-Emitter Saturation Voltage VBE (sat) |Ic = 50mA, Ip = 5mA 1.0 Vv Transition Frequency fp VCE = 10V, Ic = 50mA 400 | | MHz Collector Output Capacitance Cob ne 0 30V, f= 1 MHz, 3.0 | 5.0 | pF 2001-11-05TOSHIBA 25C5468 RESTRICTIONS ON PRODUCT USE 000707EAA @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2 2001-11-05