SIEMENS BCR 198 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=47kQ, Ro=47kQ) PS05161 Type Marking |Ordering Code | Pin Configuration Package BCR 198 WRs Q62702-C2266 |1=B |2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vceo 50 Vv Collector-base voltage Vopo 50 Emitter-base voltage VeBo 10 Input on Voltage Vion) 50 DC collector current le 70 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature jj 150 C Storage temperature Tstg - 65... + 150 Thermal Resistance Junction ambient =? Ringa S$ 350 KW Junction - soldering point Ainos $240 1) Package mourited on peb 40mm x 40mm x 1.5mm J Gem? Cu Semiconductor Group 743 11.96SIEMENS BCR 198 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Vaiues Unit min. _|typ. |max DC Characteristics Collector-emitter breakdown voitage VieR)CEO v Io = 100 pA, fg = 0 50 - - Collector-base breakdown voltage VipR)}cBo Io = 10 pA, Ip =0 50 - . Collector cutoff current lopo nA Vop = 40 V, ie =0 - - 100 Emitter cutoff current leso pA Veg = 10 V, lo =0 - - 164 DC current gain hee - Io=5 mA, Vog=5V 70 - - Collector-emitter saturation voltage 1) | Voesat Vv Ig = 10 mA, fp = 0.5 MA - - 0.3 Input off voltage Vicor) Io = 100 pA, Vog = 5 V 0.8 - 1.5 Input on Voltage Vion) le =2 MA, Vogp =0.3V 1 - 3 Input resistor A, 32 47 62 kQ Resistor ratio R,/Re 0.9 1 1.1 : AC Characteristics Transition frequency fr MHz lo = 10 MA, Veg = 5 V, f= 100 MHz - 190 - - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300p1s; D < 2% Semiconductor Group 744 11.96SIEMENS DC Current Gain he = f (Ic) Vog = 5V (common emitter configuration) 103 10? 10 10 19 10 mA Input on Voitage Viton) = A/c) Vce = 0.3V (common emitter configuration) a al ifon) Semiconductor Group BCR 198 Collector-Emitter Saturation Voltage Voesat = Alc), hee = 20 10? 10 0.90 0.2 04 0.6 Vv 1.0 > Meee Input off voltage Vio) = Ac) Voce = 5V (common emitter configuration) Muon 11.96SIEMENS BCR 198 Total power dissipation Fi, = f(Ta*; Ts) * Package mounted on epoxy 300 mw . \ . \ 0 a 20 40 80 80 100 120 C 150 sh ar's Permissible Pulse Load Rinys = Aip) Permissible Pulse Load Piotmax / Ptotoc = Nip) Oi Prins. | Li col on nc 10 s 10 i ton Tr TAN Semiconductor Group 746 11.96