ZHCS750
Document number: DS33218 Rev. 3 - 2 1 of 5
www.diodes.com February 2011
© Diodes Incorporated
ZHCS750
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
V
R = 40V
I
F = 750mA
I
R = 50μA
Description and Applications
DC – DC Converters
Mobile Telecomms
PCMIA
Features and Benefits
High current capability (IF = 750mA)
Low VF
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (approximate)
Ordering Information (Note 1)
Device Packaging Shipping
ZHCS750TA SOT23 3000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View
ZS7 = Product Type Marking Code
SOT23
ZS7
ZHCS750
Document number: DS33218 Rev. 3 - 2 2 of 5
www.diodes.com February 2011
© Diodes Incorporated
ZHCS750
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Reverse Voltage VR 40 V
Continuous Forward Current IF 750 mA
Forward Voltage @ IF = 750mA VF 490 mV
Average Peak Forward Current; D.C. = 50% IFAV 1500 mA
Non Repetitive Forward Current t
100
μ
s IFSM 12 A
t
10ms 5.2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C PD 500 mW
Junction Temperature TJ 125 °C
Storage Temperature Range TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(
BR
)
R 40 60 - V
IR = 300μA
Forward Voltage (Note 2) VF
- 225 280
mV
IF = 50mA
- 235 310 IF = 100mA
- 290 350 IF = 250mA
- 340 420 IF = 500mA
- 390 490 IF = 750mA
- 440 540 IF = 1A
- 530 650 IF = 1.5A
Reverse Current IR - 50 100
μA VR = 30V
Diode Capacitance CD - 25 - pF
f = 1MHz, VR = 25V
Reverse Recovery Time trr - 12 - ns
Switched from IF = 500mA to
IR = 500mA
Measured @ IR = 50mA
Notes: 2. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.
ZHCS750
Document number: DS33218 Rev. 3 - 2 3 of 5
www.diodes.com February 2011
© Diodes Incorporated
ZHCS750
ZHCS750
Document number: DS33218 Rev. 3 - 2 4 of 5
www.diodes.com February 2011
© Diodes Incorporated
ZHCS750
MAXIMUM TRANSIENT THERMAL RESISTANCE*
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
ZHCS750
Document number: DS33218 Rev. 3 - 2 5 of 5
www.diodes.com February 2011
© Diodes Incorporated
ZHCS750
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