2009-12-04
BFP540
1
1
2
3
4
NPN Silicon RF Transistor
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding Gms = 21.5 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0°C
TA ≤ 0°C
VCEO
4.5
4
V
Collector-emitter voltage VCES 14
Collector-base voltage VCBO 14
Emitter-base voltage VEBO 1
Collector current IC80 mA
Base current IB8
Total power dissipation2)
TS ≤ 77°C
Ptot 250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
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BFP540
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 290 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 14 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
hFE 50 110 185 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 4 V, f = 1 GHz
fT21 30 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.14 0.24 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.33 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.65 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
F
-
-
0.9
1.3
1.4
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21.5 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma - 16 - dB
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
16
-
18.5
14.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, ZS=ZL=50 Ω, f = 1.8 GHz
IP3- 24.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
2009-12-04
BFP540
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Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website: www.infineon.com/rf.models. Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 8 GHz using typical
devices. The BFP540 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
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BFP540
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 2.5 3 V4
VCB
0
0.05
0.1
pF
0.2
Ccb
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Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
0 10 20 30 40 50 60 70 80 mA 100
IC
2
4
6
8
10
12
14
16
18
20
22
24
26
dBm
30
IP3
1V
1.5V
2V
3V
4V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 mA 90
IC
0
5
10
15
20
25
GHz
35
fT
0.5
1
1.5
2
3
4
Power gain Gma, Gms = ƒ(IC)
VCE = 2V
f = Parameter in GHz
0 10 20 30 40 50 60 70 mA 90
IC
0
5
10
15
20
dB
30
G
1
2
3
4
5
6
Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 2V, IC = 20mA
01234GHz 6
G
5
10
15
20
25
30
35
40
dB
50
IC
|S21|²
Gms
Gma
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Power gain Gma, Gms = ƒ (VCE)
IC = 20mA
f = Parameter in GHz
0 0.5 1 1.5 2 2.5 3 V4
VCE
0
5
10
15
20
dB
30
G
1
2
3
4
5
6
Noise figure F = ƒ(IC)
VCE = 2V, ZS = ZSopt
0 10 20 30 40 50 60 mA 80
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
Noise figure F = ƒ(IC)
VCE = 2V, f = 1.8GHz
0 10 20 30 40 50 60 mA 80
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
ZS = 50Ohm
ZS = Zsopt
Noise figure F = ƒ(f)
VCE = 2V, ZS = ZSopt
01234GHz 6
f
0
0.5
1
1.5
2
dB
3
F
IC = 20mA
IC = 5mA
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Source impedance for min.
noise figure vs. frequency
VCE = 2V, IC = 5mA / 20mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
5GHz
6GHz
5mA
20mA
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2009-12-04
BFP540
10
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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