1N4150
www.vishay.com Vishay Semiconductors
Rev. 1.9, 06-Jul-17 1Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High speed switch and general purpose use in computer
and industrial applications
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 50 V
Reverse voltage VR50 V
Peak forward surge current tp = 1 μs IFSM 4A
Average peak forward current IFRM 600 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IF(AV) 150 mA
Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW
l = 4 mm, TL ≤ 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
1N4150
www.vishay.com Vishay Semiconductors
Rev. 1.9, 06-Jul-17 2Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF0.540 0.620 V
IF = 10 mA VF0.660 0.740 V
IF = 50 mA VF0.760 0.860 V
IF = 100 mA VF0.820 0.920 V
IF = 200 mA VF0.870 1 V
Reverse current VR = 50 V IR100 nA
VR = 50 V, Tj = 150 °C IR100 μA
Diode capacitance VR = 0 V, f = 1 MHz,
VHF = 50 mV CD2.5 pF
Reverse recovery time IF = IR = (10 to 100) mA,
iR = 0.1 x IR, RL = 100 Ωtrr 4ns
0 40 80 120 160 200
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
J
- Junction Temperature (°C)
94 9100
Scattering Limit
V
R
= 50 V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9162
Scattering Limit
T
J
= 25 °C
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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