5962-9218001MRA - e2v - Datasheet.Live

REVISIONS

LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

Update the boilerplate to current requirements as specified in MIL-PRF-38535.

Editorial changes throughout. – jak

06-10-02

Thomas M. Hess

REV

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SHEET 15 16 17

REV STATUS REV A A A A A A A A A A A A A A

OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14

PMIC N/A PREPARED BY

Thanh V. Nguyen

STANDARD

MICROCIRCUIT

DRAWING

CHECKED BY

Thanh V. Nguyen

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

APPROVED BY

Monica L. Poelking

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DRAWING APPROVAL DATE

94-02-18

MICROCIRCUIT, DIGITAL, ADVANCED CMOS,

OCTAL D-TYPE LATCH WITH THREE-STATE

OUTPUTS, MONOLITHIC SILICON

AMSC N/A

REVISION LEVEL

SIZE

CAGE CODE

67268

5962-92180

SHEET

1 OF

DSCC FORM 2233

APR 97 5962-E474-06

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REVISION LEVEL

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DSCC FORM 2234

APR 97

1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)

and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or

Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

1.2 PIN. The PIN is as shown in the following example:

5962 - 92180 01 M R A

Federal

stock class

designator

RHA

designator

(see 1.2.1)

Device

type

(see 1.2.2)

Device

class

designator

Case

outline

(see 1.2.4)

Lead

finish

(see 1.2.5)

\ / (see 1.2.3)

Drawing number

1.2.1 RHA designator. Device classes Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels

and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix

A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

1.2.2 Device type(s). The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function

01 54ACQ573 Octal D-type latch with three-state outputs

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

follows:

Device class Device requirements documentation

M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A

Q, or V Certification and qualification to MIL-PRF-38535

1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

R GDIP1-T20 or CDIP2-T20 20 Dual-in-line

S GDFP2-F20 or CDFP3-F20 20 Flat pack

2 CQCC1-N20 20 Square leadless chip carrier

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, and V or MIL-PRF-38535,

appendix A for device class M.

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1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage range (VCC) ........................................................................... -0.5 V dc to +7.0 V dc

DC input voltage range (VIN) ......................................................................... -0.5 V dc to VCC + 0.5 V dc

DC output voltage range (VOUT) .................................................................... -0.5 V dc to VCC + 0.5 V dc

DC input clamp current (IIK):

VIN = -0.5 V ................................................................................................. -20 mA

VIN = VCC + 0.5 V......................................................................................... +20 mA

DC output clamp current (IOK):

VOUT = -0.5 V............................................................................................... -20 mA

VOUT = VCC + 0.5 V...................................................................................... +20 mA

DC output current (IOUT) (per output pin) ....................................................... ±50 mA

DC VCC or GND current (ICC, IGND) (per pin) .................................................. ±400 mA

Storage temperature range (TSTG) ................................................................ -65°C to +150°C

Maximum power dissipation (PD) ................................................................. 500 mW

Lead temperature (soldering, 10 seconds).................................................... +300°C

Thermal resistance, junction-to-case (θJC) .................................................... See MIL-STD-1835

Junction temperature (TJ) ............................................................................. +175°C

1.4 Recommended operating conditions. 2/ 3/

Supply voltage range (VCC) ........................................................................... +2.0 V dc to +6.0 V dc

Input voltage range (VIN) ............................................................................... 0.0 V to VCC

Output voltage range (VOUT).......................................................................... 0.0 V to VCC

Minimum high level input voltage (VIH):

VCC = 3.0 V ................................................................................................. 2.1 V

VCC = 4.5 V ................................................................................................. 3.15 V

VCC = 5.5 V ................................................................................................. 3.85 V

Maximum low level input voltage (VIL):

VCC = 3.0 V ................................................................................................. 0.9 V

VCC = 4.5 V ................................................................................................. 1.35 V

VCC = 5.5 V ................................................................................................. 1.65 V

Case operating temperature range (TC) ........................................................ -55°C to +125°C

Minimum input edge rate (ΔV/Δt):

(VIN from 0.3VCC to 0.7VCC or from 0.7VCC to 0.3VCC) ................................ 125 mV/ns

Maximum high level output current (IOH):

VCC = 3.0 V ................................................................................................. -12 mA

VCC = 4.5 V ................................................................................................. -24 mA

Maximum low level output current (IOL):

VCC = 3.0 V ................................................................................................. +12 mA

VCC = 4.5 V ................................................................................................. +24 mA

1/ Stresses above the absolute maximum rating may cause permanent damage to the device, Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Unless otherwise noted, all voltages are referenced to GND.

3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature

range of -55°C to +125°C.

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APR 97

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from

the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

ELECTRONIC INDUSTRIES ALLIANCE (EIA)

JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed

CMOS Devices.

(Copies of these documents are available online at http://www.eia.org or from the Electronic Industries Alliance, 2500 Wilson

Boulevard, Arlington, VA 22201-3834.)

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth table. The truth table shall be as specified on figure 2.

3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.

3.2.5 Ground bounce waveforms and test circuit. The ground bounce waveforms and test circuit shall be as specified on

figure 4.

3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

case operating temperature range.

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3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535,

appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a

QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in

MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of

MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 38 (see MIL-PRF-38535, appendix A).

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TABLE I. Electrical performance characteristics.

Test and

MIL-STD-883

test method 1/

Symbol

Test conditions 2/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified

VCC

Group A

subgroups

Limits

Unit

Min Max

3.0 V 1, 2, 3 2.90

4.5 V 1, 2, 3 4.40

IOH = -50 μA

5.5 V 1, 2, 3 5.40

1 2.56 IOH = -12 mA 3.0 V

2, 3 2.40

1 3.86 4.5 V

2, 3 3.70

1 4.86

IOH = -24 mA

5.5 V

2, 3 4.70

High level output voltage

3006

VOH For all inputs affecting

output under test,

VIN = VIH or VIL

For all other inputs,

VIN = VCC or GND

IOH = -50 mA

5.5 V 1, 2, 3 3.85

3.0 V 1, 2, 3 0.10

4.5 V 1, 2, 3 0.10

IOL = 50 μA

5.5 V 1, 2, 3 0.10

1 0.36 IOL = 12 mA 3.0 V

2, 3 0.50

1 0.36 4.5 V

2, 3 0.50

1 0.36

IOL = 24 mA

5.5 V

2, 3 0.50

Low level output voltage

3007

VOL For all inputs affecting

output under test,

VIN = VIH or VIL

For all other inputs,

VIN = VCC or GND

IOL = 50 mA

5.5 V 1, 2, 3 1.65

Positive input clamp voltage

3022

VIC+ For input under test

IIN = 18 mA

4.5 V 5.7

Negative input clamp voltage

3022

VIC- For input under test

IIN = -18 mA

4.5 V

1, 2, 3

-1.2

1 0.1 Input current high

3010

IIH For input under test, VIN = 5.5 V

For all other inputs, VIN = VCC or GND

5.5 V

2, 3 1.0

μA

1 -0.1 Input current low

3009

IIL For input under test, VIN = 0.0 V

For all other inputs, VIN = VCC or GND

5.5 V

2, 3 -1.0

μA

1 0.5 Three-state output leakage

current, high

3021

IOZH

OE = VIH or GND

For all other inputs, VIN = VCC or GND

VOUT = 5.5 V

5.5 V

2, 3 10.0

μA

1 -0.5 Three-state output leakage

current, low

3020

IOZL

OE = VIH or GND

For all other inputs, VIN = VCC or GND

VOUT = 0.0 V

5.5 V

2, 3 -10.0

μA

1 8.0 Quiescent supply current,

output high

3005

ICCH 5.5 V

2, 3 160

μA

1 8.0 Quiescent supply current,

output low

3005

ICCL

OE = GND

For all other inputs, VIN = VCC or GND

5.5 V

2, 3 160

μA

1 8.0 Quiescent supply current,

output three-state

3005

ICCZ

5/ OE = VCC

For all other inputs, VIN = VCC or GND

5.5 V

2, 3 160

μA

See footnotes at end of table.

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TABLE I. Electrical performance characteristics – Continued.

Test and

MIL-STD-883

test method 1/

Symbol

Test conditions 2/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified

VCC

Group A

subgroups

Limits

Unit

Min Max

Input capacitance

3012

CIN GND 4 12 pF

Output capacitance

3012

COUT

5.5 V 4 15 pF

Power dissipation

capacitance

CPD

TC = +25°C

See 4.4.1c

5.0 V 4 50 pF

VOLP

5.0 V 4 1750 mV

Low level ground bounce

noise

VOLV

5.0 V 4 -1200 mV

VOHP

5.0 V 4 VOH

+1000

mV High level VCC bounce

noise

VOHV

VIH = VCC

VIL = 0.0 V

TA = +25°C

See 4.4.1d

See figure 4

5.0 V 4 VOH

-1800

3.0 V 7, 8 L H

4.5 V 7, 8 L H

Functional tests

3014

8/ For all inputs, VIN = VIH or VIL

Verify output VO

See 4.4.1b 5.5 V 7, 8 L H

9 1.5 13.0 3.0 V

10, 11 1.5 16.0

9 1.5 9.5

Propagation delay time,

Dn to On

3003

tPLH1,

tPHL1

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V

10, 11 1.5 11.0

9 1.5 12.5 3.0 V

10, 11 1.5 15.0

9 1.5 9.5

Propagation delay time,

LE to On

3003

tPLH2,

tPHL2

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V

10, 11 1.5 11.0

9 1.5 11.5 3.0 V

10, 11 1.5 13.5

9 1.5 8.5

Propagation delay time,

output enable, OE to On

3003

tPZH,

tPZL

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V

10, 11 1.5 10.0

9 1.5 11.5 3.0 V

10, 11 1.5 13.0

9 1.0 9.5

Propagation delay time,

output disable, OE to On

3003

tPHZ,

tPLZ

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V

10, 11 1.0 10.5

3.0 V 9, 10, 11 4.0 Setup time, high or low,

Dn to LE

10/

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V 9, 10, 11 4.0

3.0 V 9, 10, 11 2.0 Hold time, high or low,

Dn from LE

10/

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V 9, 10, 11 2.0

3.0 V 9, 10, 11 5.0 LE pulse width,

high

10/

CL = 50 pF minimum

RL = 500Ω

See figure 5 4.5 V 9, 10, 11 5.0

See footnotes on next sheet.

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TABLE I. Electrical performance characteristics – Continued.

1/ For tests not listed in the referenced MIL-STD-883, utilize the general test procedure under the conditions listed herein.

2/ Each input/output, as applicable, shall be tested at the specified temperature for the specified limits to the tests in table I

herein. Output terminals not designated shall be high level logic, low level logic, or open, except for all ICC tests, the output

terminals shall be open. When performing the ICC tests, the current meter shall be placed in the circuit such that all current

flows through the meter. The values to be used for VIH and VIL shall be the VIH minimum and VIL maximum values listed in

section 1.4 herein.

3/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and

the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum

and maximum limits, as applicable, listed herein. All devices shall meet or exceed the limits specified in table I, as

applicable, at 3.0 V ≤ VCC ≤ 3.6 V and 4.5 V ≤ 5.5 V.

4/ Transmission driving tests are performed at VCC = 5.5 V dc with a 2 ms duration maximum. This test may be performed

using VIN = VCC or GND. When VIN = VCC or GND is used, the test is guaranteed for VIN = 3.85 V or 1.65 V.

5/ Three-state output conditions are required.

6/ Power dissipation capacitance (CPD) determines the power consumption, PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC),

and the current consumption, IS = (CPD + CL)VCCf + ICC. For both PD and IS, f is the frequency of the input signal, and

L is the external output load capacitance.

7/ This test is for qualification only. Ground and VCC bounce tests are performed on a non-switching (quiescent) output and

are used to measure the magnitude of induced noise caused by other simultaneously switching outputs. The test is

performed on a low noise bench test fixture. For the device under test, all outputs shall be loaded with 500Ω of load

resistance and a minimum of 50 pF of load capacitance (see figure 4). Only chip capacitors and resistors shall be used.

The output load components shall be located as close as possible to the device outputs. It is suggested that, whenever

possible, this distance be kept to less than 0.25 inches. Decoupling capacitors shall be placed in parallel from VCC to

ground. The device manufacturer shall determine the values of these decoupling capacitors. The low and high level ground

and VCC bounce noise is measured at the quiet output using a 1 GHz minimum bandwidth oscilloscope with a 50Ω input

impedance.

The device inputs shall be conditioned such that all outputs are at a high nominal VOH level. The device inputs shall then be

conditioned such that they switch simultaneously and the output under test remains at VOH as all other outputs possible are

switched from VOH to VOL. VOHV and VOHP are then measured from the nominal VOH level to the largest negative and positive

peaks, respectively (see figure 4). This is then repeated with the same outputs not under test switching from VOL to VOH.

The device inputs shall be conditioned such that all outputs are at a low nominal VOL level. The device inputs shall then be

conditioned such that they switch simultaneously and the output under test remains at VOL as all other outputs possible are

switched from VOL to VOH. VOLP and VOLV are then measured from the nominal VOL level to the largest positive and negative

peaks, respectively (see figure 4). This is then repeated with the same outputs not under test switching from VOH to VOL.

8/ Tests shall be performed in sequence, attributes data only. Functional tests shall include the truth table and other logic

patterns used for fault detection. The test vectors used to verify the truth table shall, at a minimum, test all functions of each

input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table

in figure 2 herein. For output measurements, L < 0.3VCC and H ≥ 0.7VCC.

9/ AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V and guaranteed by testing at VCC = 4.5 V. AC limits at

CC = 3.6 V are equal to the limits at VCC = 3.0 V and guaranteed by testing at VCC = 3.0 V. Minimum propagation delay

time limits for VCC = 5.5 V and VCC = 3.6 V shall be guaranteed to be no more than 0.5 ns less than those specified at

CC = 4.5 V and VCC = 3.0 V, respecftively, in table I herein. For propagation delay tests, all paths must be tested.

10/ This parameter shall be guaranteed, if not tested, to the limits in table I, herein.

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Device type

Case outlines

R, S, and 2

Terminal number

Terminal symbol

GND

VCC

Terminal description

Terminal symbol Description

Dn (n = 0 to 7) Data inputs

On (n = 0 to 7) Outputs (noninverting)

LE Latch input input (active high)

OE Output enable control input

(active low)

FIGURE 1. Terminal connections.

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Device type 01

Inputs Internal Outputs

OE LE Dn On On

H X X X Z

L H L H L

L H H L H

L ↓ l H L

L ↓ h L H

L L X O0 O0

L = Low voltage level

H = High voltage level

X = Irrelevant

↓ = High-to-low transition

l = Low voltage level meeting the setup and hold times in table I

relative to the transition of LE

h = High voltage level meeting the setup and hold times in table I

relative to the transition of LE

Z = High impedance

O0 = Previous O0 before high-to-low transition of latch enable

FIGURE 2. Truth table.

FIGURE 3. Logic diagram.

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NOTES:

1. CL includes a 47 pF chip capacitor (-0 percent, +20 percent) and at least 3 pF of equivalent capacitance from the test jig

and probe.

2. RL = 450Ω ±1 percent, chip resistor in series with a 50Ω termination. For monitored outputs, the 50Ω termination shall

be the 50Ω characteristic impedance of the coaxial connector to the oscilloscope.

3. Input signal to the device under test:

a. VIN = 0.0 V to VCC; duty cycle = 50 percent; fIN ≥ 1 MHz.

b. tr, tf = 3.0 ns ±1.0 ns. For input signal generators incapable of maintaining these values of tr and tf, the 3.0 ns limit

may be increased up to 10 ns, as needed, maintaining the ±1.0 ns tolerance and guaranteeing the results at 3.0 ns

±1.0 ns; skew between any two switching input signals (tsk): ≤ 250 ps.

FIGURE 4. Ground bounce waveforms and test circuit.

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FIGURE 5. Switching waveforms and test circuit.

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NOTES:

1. When measuring tPLZ and tPZL: VTEST = 2 x VCC.

2. When measuring tPHZ, tPZH, tPLH, and tPHL: VTEST = Open.

3. The tPZL and tPLZ reference waveform is for the output under test with internal conditions such that the output is at VOL

except when disabled by the output enable control. The tPZH and tPHZ reference waveform is for the output under test

with internal conditions such that the output is at VOH except when disabled by the output enable control.

4. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance).

5. RT = 50Ω or equivalent. RL = 500Ω or equivalent.

6. Input signal from pulse generator: VIN = 0.0 V to VCC; PRR ≤ 10 MHz; tr ≤ 3.0 ns; tf ≤ 3.0 ns; tr and tf shall be measured

from 0.3VCC to 0.7VCC and from 0.7VCC to 0.3VCC, respectively; duty cycle = 50 percent.

7. Timing parameters shall be tested at a minimum input frequency of 1 MHz.

8. The outputs are measured one at a time with one transition per measurement.

FIGURE 5. Switching waveforms and test circuit.- Continued.

STANDARD

MICROCIRCUIT DRAWING

SIZE

5962-92180

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET 14

DSCC FORM 2234

APR 97

4. VERIFICATION

4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with

MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan

shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be

in accordance with MIL-PRF-38535, appendix A.

4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted

on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

4.2.1 Additional criteria for device class M.

a. Burn-in test, method 1015 of MIL-STD-883.

(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision

level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1015 of MIL-STD-883.

(2) TA = +125°C, minimum.

b. Interim and final electrical test parameters shall be as specified in table II herein.

4.2.2 Additional criteria for device classes Q and V.

a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained

under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance

with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit

shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified

in method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified in table II herein.

c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in

accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for

groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with

MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for

device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed

for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections

(see 4.4.1 through 4.4.4).

4.4.1 Group A inspection.

a. Tests shall be as specified in table II herein.

b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. The test

vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input

to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2, herein. For device

classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.

c. CIN, COUT, and CPD shall be measured only for initial qualification and after process or design changes which may affect

capacitance. CIN and COUT shall be measured between the designated terminal and GND at a frequency of 1 MHz.

CPD shall be tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein. For CIN, COUT,

and CPD, test all applicable pins on five devices with zero failures.

STANDARD

MICROCIRCUIT DRAWING

SIZE

5962-92180

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET 15

DSCC FORM 2234

APR 97

For CIN and COUT, a device manufacturer may qualify devices by functional groups. A specific functional group shall

be composed of function types, that by design, will yield the same capacitance values when tested in accordance with

table I, herein. The device manufacturer shall set a function group limit for the CIN and COUT tests. The device

manufacturer may then test one device function from a functional group to the limits and conditions specified herein.

All other device functions in that particular functional group shall be guaranteed, if not tested, to the limits and

conditions specified in table I, herein. The device manufacturer shall submit to DSCC-VA the device functions listed in

each functional group and the test results for each device tested.

d. Ground and VCC bounce tests are required for all device classes. These tests shall be performed only for initial

qualification, after process or design changes which may affect the performance of the device, and any changes to the

test fixture. VOLP, VOLV, VOHP, and VOHV shall be measured for the worst case outputs of the device. All other outputs

shall be guaranteed, if not tested, to the limits established for the worst case outputs. The worst case outputs tested

are to be determined by the manufacturer. Test 5 devices assembled in the worst case package type supplied to this

document. All other package types shall be guaranteed, if not tested, to the limits established for the worst case

package. The package type to be tested shall be determined by the manufacturer. The device manufacturer will

submit to DSCC-VA data that shall include all measured peak values for each device tested and detailed oscilloscope

plots for each VOLP, VOLV, VOHP, and VOHV from one sample part per function. The plot shall contain the waveforms of

both a switching output and the output under test.

Each device manufacturer shall test product on the fixtures they currently use. When a new fixture is used, the device

manufacturer shall inform DSCC-VA of this change and test the 5 devices on both the new and old test fixtures. The

device manufacturer shall then submit to DSCC-VA data from testing on both fixtures that shall include all measured

peak values for each device tested and detailed oscilloscope plots for each VOLP, VOLV, VOHP, and VOHV from one

sample part per function. The plot shall contain the waveforms of both a switching output and the output under test.

For VOHP, VOHV, VOLP, and VOLV, a device manufacturer may qualify devices by functional groups. A specific functional

group shall be composed of function types, that by design, will yield the same test values when tested in accordance

with table I, herein. The device manufacturer shall set a functional group limit for the VOHP, VOHV, VOLP, and VOLV tests.

The device manufacturer may then test one device function from a functional group to the limits and conditions

specified herein. All other device functions in that particular functional group shall be guaranteed, if not tested, to the

limits and conditions specified in table I, herein. The device manufacturer shall submit to DSCC-VA the device

functions listed in each functional group and the test results, along with the oscilloscope plots, for each device tested.

4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.

4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:

a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level

control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify

the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method

1005 of MIL-STD-883.

b. TA = +125°C, minimum.

c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.

4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test

temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with

MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB

in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test

circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1005 of MIL-STD-883.

4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.

STANDARD

MICROCIRCUIT DRAWING

SIZE

5962-92180

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET 16

DSCC FORM 2234

APR 97

4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness

assured (see 3.5 herein).

a. End-point electrical parameters shall be as specified in table II herein.

b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as

specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to

radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All

device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at

A = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.

TABLE II. Electrical test requirements.

Test requirements

Subgroups

(in accordance with

MIL-STD-883,

method 5005, table I)

Subgroups

(in accordance with

MIL-PRF-38535, table III)

Device

class M

Device

class Q

Device

class V

Interim electrical

parameters (see 4.2)

- - -

Final electrical

parameters (see 4.2)

1/ 1, 2, 3, 7,

8, 9

1/ 1, 2, 3, 7,

8, 9, 10, 11

2/ 1, 2, 3, 7,

8, 9, 10, 11

Group A test

requirements (see 4.4)

1, 2, 3, 4, 7,

8, 9, 10, 11

1, 2, 3, 4, 7,

8, 9, 10, 11

1, 2, 3, 4, 7,

8, 9, 10, 11

Group C end-point electrical

parameters (see 4.4)

1, 2, 3

1, 2, 3, 7, 8

1, 2, 3, 7,8

Group D end-point electrical

parameters (see 4.4)

1, 2, 3

1, 2, 3, 7, 8

Group E end-point electrical

parameters (see 4.4)

1, 7, 9

1/ PDA applies to subgroup 1.

2/ PDA applies to subgroups 1 and 7.

4.5 Methods of inspection. Methods of inspection shall be specified as follows:

4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.

Currents given are conventional current and positive when flowing into the referenced terminal.

5. PACKAGING

5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes

Q and V or MIL-PRF-38535, appendix A for device class M.

STANDARD

MICROCIRCUIT DRAWING

SIZE

5962-92180

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET 17

DSCC FORM 2234

APR 97

6. NOTES

6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications

(original equipment), design applications, and logistics purposes.

6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-

prepared specification or drawing.

6.1.2 Substitutability. Device class Q devices will replace device class M devices.

6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for

the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system

application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users

and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic

devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.

6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone

(614) 692-0547.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535 and MIL-HDBK-1331.

6.6 Sources of supply.

6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.

The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to

this drawing.

6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.

The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been

submitted to and accepted by DSCC-VA.

STANDARD MICROCIRCUIT DRAWING BULLETIN

DATE: 06-10-02

Approved sources of supply for SMD 5962-92180 are listed below for immediate acquisition information only and shall

be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised

to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate

of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next

dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of

supply at http://www.dscc.dla.mil/Programs/Smcr/.

Standard

microcircuit drawing

PIN 1/

Vendor

CAGE

number

Vendor

similar

PIN 2/

5962-9218001MRA 20714

0C7V7

54ACQ573DMQB

5962-9218001MSA 20714

0C7V7

54ACQ573FMQB

5962-9218001M2A 20714

0C7V7

54ACQ573LMQB

1/ The lead finish shown for each PIN representing

a hermetic package is the most readily available

from the manufacturer listed for that part. If the

desired lead finish is not listed, contact the vendor

to determine its availability.

2/ Caution. Do not use this number for item

acquisition. Items acquired to this number may not

satisfy the performance requirements of this drawing.

Vendor CAGE Vendor name

number and address

27014 National Semiconductor

2900 Semiconductor Drive

P.O. Box 58090

Santa Clara, CA 95052-8090

0C7V7 QP Semiconductor

2945 Oakmead Village Court

Santa Clara, CA 95051

The information contained herein is disseminated for convenience only and the

Government assumes no liability whatsoever for any inaccuracies in the

information bulletin.