IL766 DUAL CHANNEL ILD766 SINGLE CHANNEL Bidirectional Input Darlington Optocoupler FEATURES * Internal RBE for Better Stability * High Current Transfer Ratios, VCE=5.0 V IL/ILD766-1: 500% at IF=2.0 mA IL/ILD766-2: 500% at IF=1.0 mA * BVCEO >60 V * AC or Polarity Insensitive Inputs * Built-In Reverse Polarity Input Protection * Industry Standard DIP Package * Underwriters Lab File #E52744 Dimensions in inches (mm) Single Channel pin one ID 1 .248 (6.30) .256 (6.50) 4 5 Anode/ Cathode 1 6 Base Cathode/ Anode 2 5 Collector 6 NC 3 4 Emitter .335 (8.50) .343 (8.70) The IL/ILD766 are bidirectional input optically coupled isolators. They consist of two Gallium Arsenide infrared emitting diodes coupled to a silicon NPN photodarlington per channel. .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. DESCRIPTION The IL766 are single channel optocouplers. The ILD766 has two isolated channels in a single DIP package. They are designed for applications requiring detection or monitoring of AC signals. 2 3 .130 (3.30) .150 (3.81) 18 4 typ. .031 (0.80) min. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .114 (2.90) .130 (3.0) .100 (2.54) typ. Dual Channel pin one ID 4 3 2 1 Anode 1 Maximum Ratings .255 (6.48) Cathode 2 .268 (6.81) Emitter (Each Channel) 5 6 7 8 Continuous Forward Current......................... 60 mA Cathode 3 Power Dissipation at 25C .379 (9.63) Single Channel ....................................... 200 mW Anode 4 .390 (9.91) .030 (0.76) Dual Channel............................................ 90 mW .300 (7.62) .045 (1.14) .031 (0.79) Derate Linearly from 25C typ. 4 typ. Single Channel ................................... 2.6 mW/C .130 (3.30) .150 (3.81) Dual Channel...................................... 1.2 mW/C .050 (1.27) 10 Detector (Each Channel) .020 (.51 ) 3-9 Collector-Emitter Breakdown Voltage ............. 60 V .018 (.46) .035 (.89 ) .022 (.56) .008 (.20) Collector-Base Breakdown Voltage ................ 70 V .100 (2.54) typ. .012 (.30) Power Dissipation at 25C ......................... 100 mW Derate Linearly from 25C .................. 1.33 mW/C Electrical Characteristics TA=25C Package Parameter Sym Min Typ Max Isolation Test Voltage Emitter (t=1.0 sec.) .......................................... 5300 VRMS Isolation Resistance Forward Voltage -- 1.2 1.5 VF TA=25C ................................................. 1012 Detector TA=100C ............................................... 1011 Breakdown Voltage, -- Total Power Dissipation at TA=25C 75 Collector-Emitter BVCEO 60 (LED Plus Detector) BVCBO 60 90 Collector-Base Single Channel ....................................... 250 mW -- 10 100 Leakage Current, ICEO Dual Channel.......................................... 400 mW Collector-Emitter Derate Linearly from 25C Package Single Channel ................................... 3.3 mW/C Saturation Voltage, -- 1.0 VCEsat -- Dual Channel .................................... 5.3 mW/C Collector-Emitter Creepage ................................................. 7.0 mm DC Current Transfer Ratio CTR -- -- Clearance ................................................ 7.0 mm IL766/ILD766-1 500 Comparative Tracking Index per IL766-2 500 DIN IEC 112/VDE303, part 1 ......................... 175 Rise Time, Fall Time -- -- 100 -- Storage Temperature ................... -55C to +150C Operating Temperature................ -55C to +100C Lead Soldering Time at 260C.................... 10 sec. 8 Emitter 7 Collector 6 Collector 5 Emitter .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Unit Condition V IF=10 mA V V nA IC=1.0 mA IC=10 A VCE=10 V V IF=10 mA IC=10 mA VCE=5.0 V IF=2.0 mA IF=1.0 mA VCC=10 V IF=2.0 mA RL=100 % % s 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-159 March 1, 2000-01 Figure 1. Input characteristics Figure 4. ICEO at VCE=10 V versus temperature Figure 2. Transistor current versus voltage Figure 5. Normalized CTR versus forward current NCTRce - Normalized CTR 10 1 VCE = 5 V .1 .01 Figure 3. Transistor output current versus voltage Normalized @ IF = 10 mA TA = 25C VCE = 1 V .1 1 10 IF - LED Current - mA 100 Figure 6. tr versus forward current Trise (s) 30 RL = 1k 20 RL = 10k 10 .0 1 10 IF - LED Current - mA 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) IL/ILD766 2-160 March 1, 2000-01 Figure 7. Saturated switching characteristics measurements--schematic and waveform Figure 10. toff versus forward current 700 VCC=10 V RL = 10k 500 RL Toff (s) F=10 KHz, DF=50% 600 VO 400 300 200 IF=2 mA RL = 1k 100 0 IF 1 10 IF - LED Current - mA Figure 11. tphl versus forward current tD tR 30 tPLH tS tPHL RL = 1k 20 VTH=1.5 V tF Ton (s) VO RL = 10k 10 Figure 8. tfall versus forward current 600 0 1 RL = 10k Tfall (s) 500 10 IF - LED Current - mA 400 Figure 12. tplh versus forward current 300 400 200 RL = 1k 100 300 1 Tplh (s) 0 10 IF - LED Current - mA RL = 10k 200 100 RL = 1k Figure 9. ton versus forward current 20 0 1 Tphl (s) 10 IF - LED Current - mA RL = 1k 10 RL = 10k 0 1 10 IF - LED Current - mA 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) IL/ILD766 2-161 March 1, 2000-01