Corey DUAL LOW VOLTAGE POWER AMPLIFIER NJM2076 The NJM2076 is a dual power amplifier, which operates with 1.0V minimum supply voltage. The NJM2076 is suit- able to small radio and head-phone of stereo and single BTL application. = Package Outline = Features QA - BTL operation Pn>=90mW type. te - Less external components WJM2076M - Headphone stereo Amp. with external transistors - Low operation voltage (1.0V MIN.) - Low supply current (4.7mA TYP.) = Absolute Maximum Ratings (Ta=25C) Supply Voltage vt 4.5V WJM20765 Maximum Input Signal Vin 200m Vrms Power Dissipation Pp (D,S-Type) 500m W (M-Type} 300m W Operating Temperature Range Topr 20~+75T Storage Temperature Range Tsig 40~ + 125C = Electrical Characteristics (Ta=25C. v*=1.5V) Parameter Symbol Test Condition Min. | Typ. | Max. Unit Supply Current le Input: Open _ 47 7.0 | mA (1) Stereo Configuration (Test Circuit 1. Rt =160) Voltage Gain Av Vin=10mVrms 26.5 28.0 | 29.5 | dB Max. Output Power Poi THD= 10%(S-Type} 15 200 | | mw THD=10%(D, M-Type) 15 17.5 |mw Po2 THD=10%. V*=1.0V _ 3 _ mW Total Harmonic Distortion THD, Po=ImW (126mrms/160) _ 0.4 08 | % Output Noise Voltage Veo Rg=0, A Curve _ 50 150 uv Ripple Rejection Ratio RR, Re=0.f Rk =IkHz, Vg =30mvrms 25 35 | 4B {Input Resistance Rin 25 33 43 kQ Output Pin Voltage Vo (DC) 0.62 0.70) U.77] V (1) BTL Configuration {Test Circuit 2, Ry =8) Max. Output power Po3 THD=10% (S-Type) 75 100 _ mw THD= 10% (D,M-Type) 75 90 |mw Pos THD=10%, V*=1.0V (S-Type) _ 30 | mw THD= 10%. V+=L.OV(D, M-Type) _ 20 |mw Total Harmonic Distortion THD, Po =10mW(283mVrms/8Q. 1.5 45 |% Output Noise Voltage Vno2 Rg=0, A Curve ~ 85 250 uv Ripple Rejection Ratio RR, Rg=0, fp=1kHz, Vp=30mVims 20 25 _ dB Voltage Difference between Two Output Pins | AVo(DC) _ _ 50 mV 4-44 New Japan Radio Co,Ltd.NJM2076 w Connection Diagram = Test Circuit D.M-Type (Top View) 1 2 3 4 AO Of 4 7 6 UUUY 5 PIN FUNCTION . Inverting Amp. Input (A) . Non-Inverting Amp. Input(B) _ Vv . Base(B) . GND . (A) Output . Base (A) Test Circuit 1 Stereo Configuration SG (Rg=600Q) Test Circuit 2 BTL Configuration SG Rg =6002 ) t 2 3 4. 5. (B) Output 6. 7 8 S-Type 123 45 67 8 9 PIN FUNCTION ye . Base (B) . (B) Output . Power GND GND (A) Output Base (A) . Inverting Amp Input (A) . Non-Inverting Amp Input (B) OW OADASWH = 28A1313(O): hrp=115~125 (Ic=100mA) + 28A1313(0) 1eF 22042 Oo 7 Ver 2SA1313(0) + = 2SA1313(0) lp +y HK 2204 3 wr 4-45 Mew Japan Radio Co, tid.NJM2076 = Typical Characteristics Output Voltage (Test Circuit 1) Supply Current (Test Circuit 1) oo z 3S bat 3 5 > UU > a 3 2 nn v lec wy (mA) 2 3 Supply Voltage V*(V) Supply Voltage V+ (V) Supply Current (Stereo) (Vt=1.5V, f=1kHz) e E Voltage Gain 9 (V=1.5V, RL=16Q. Vin=10mVrms, C=470pF) a> e 3 Test Circuit 1 S o % 3 loc 3 ~ (mA) AV (dB) 0.02 0.1 1 10-30 30 50 100 1k 1 100k Output Power Po (mW) Frequency f (Hz) T Harmonic Distortion (Stereo om : Forel SV. Ri =16Q, Po=ImW ts rereo) ; Total Harmonic Distortion (Stereo) g (WaLSV. R= 16h, Poole (Vt=15V. Ri =16Q, Po=ImW, Test Circuit 1) & S type = E s M g A 2 gE 5 es eo Amp = 5 THD et 0.3 (%) ? 100 Ik 10k 100k THD 100 ik 100k (%) Frequency f (Hz) Frequency f (Hz) 4-46 New Japan Radio o.Lhd.NJM2076 = Typical Characteristics Harmonic Distortion Distortion Total Harmonic 3 HD 3o 3 Distortion Total Harmonic s HD (%) Total Harmonic Distortion (BTL) (V7 =1.5V. BR, =8Q, Po=10mW, Test Circuit 2 ) Ss 100 1k 10k 100k Frequency f (Hz) Total Harmonic Distortion (Stereo) (Vt=1.5V, RL=16Q2. f=1kHz, Test Circuit 1) S type 0.2 1 10 100 Output Power Po (mW) Total Harmonic Distortion (BTL) (V*=1.5V, RL =8Q, f=I1kHz, Test Circuit 2) S type 0.2 1 10 100 Output Power Po (mW) New Japan Radio Co,Ltd. Total Harmonic Distortion (BTL) (VT=1.5V, Ri=82, Po=10mW. Test Circuit 2 ) eC 5 M type z 2 e gE a THD 100 1k 1 (%) Frequency f (Hz) Total Harmonic Distortion (Stereo) {V-=1.8V, RB, =16Q, f=1kHz, Test Circuit 1) 4 | M type Cc g c S & a 2 Cc f zE S a ex THD (%) 1 10 Output Power Po (mW) Total Harmonic Distortion (BTL) (V*=1.5V. RL =8Q, f=1kHz, Test Circuit 2 } M type e g te & Z < x er THD (%) 0.2 1 10 100 Output Power Po (mW) 4-47NJM2076 Typical Application 1. For Stereo Head-Phone Head-phone Q3 INPUT SELL ELL 5 of oe f 2g 2 eg eS Zz Zz 5s 6&6 #* Ss | Ss a NIM 2076 2. BTL Amp. for Speaker (N 9 8 cl N 4 Zz NJM 2076 % 4-48______- New Japan Radio Co.Ltd.NJM2076 a Notice (1) External PNP Transistor Maximum output power becomes large with low saturation voltage transistor, and so select transistor of low saturation. Saturation Voltage: less than 0.1V (ic=100mA. Ip=10mA). hre: 120 (2) External Frequency Compensation Recommend tantalum capacitor with low tan6 (less than 0.25 at f=10kHz) and 102 resistor. Stable with large capacitor of less high frequency distortion and worse tand. For example: IuF, tand S 0.6 (3) Layout on PCB Be careful to get maximum output power and low distortion set. DIP/DMP: Signal ground has to be close to IC ground pin. Impedance of ground line must be low. SIP: Two terminals (Power GND, GND) are connected at one point on PCB. 4-49