2SC4505 Transistor, NPN Features Dimensions (Units : mm) available in MPT3 (MPT3, SOT-89, SC-62) package 2804505 ate 2 * package marking: 2SC4505; CEx, 3 i201 i where * is Neg code eo) ss == * high voltage BVcE9 = 400 V We) Le Fe * low collector saturation voltage, + eH C _ (19.4 o0s cL typically Ve (say) = 0.05 V for seasbsr lloras rere Ic/lp = 10 mMA/I MA me 30202 (1) Base * high speed switching time, typically t= 1.7 us for le = 100 MA Applications low frequency power amplifier Absolute maximum ratings (T, = 25C) (2) Collector (3) Emitter Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcso 400 Vv Collector-to-emitter voltage Vceo 400 V Emitter-to-base voltage VeBo 7 V lo 0.1 DC Collector current A lop 0.2 Pw =20 ms, duty = 50% 0.5 Collector dissipation Pe 30 W [Mounted on 40 x 40 x 0.7 mm ceramic , substrate Junction temperature T; 150 C Storage temperature T stg 55 ~ +150 C Surface Mount Transistors RONM 19728C4505 Transistor, NPN, 2SC Series Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min |Typical| Max Unit Conditions Collector-to-base _ breakdown voltage BVcpo | 400 Vi |lc=S0nA Collector-to-emitter _ breakdown voltage BVceo | 400 Vi fic=1mA Emitter-to-base = breakdown voltage BVEBo ? Vi [le = 50 HA Collector cutoff current IcBo 10 HA |Vog = 400 V Emitter cutoff current leEBO 10 WA |Veg=6V DC current gain hee 56 120 270 VoE=10V, Io =10mA Collector-to-emitter _ saturation voltage VE (sat) 0.5 V_|ic/lg = 10 mA/1 mA Base-to-emitter saturation voltage VBE (sat) 1.5 Vv Iofla ={0mA/I mA Transition frequency f 20 MHz [Voge = 10V, le = 10 mA, f= 10 MHz Output capacitance Cob 7 PF |Vceg = !0V, lr =0A, f= 1 MHz Turn on time ton 1.0 hs Io = 100 MA, Ig; = Igo = 10 mA, Storage time tstg 5.5 Hs |Voc = 1S0V Fall time t 17 us See test circuit hee rankings Item N P Q Nee 56 ~ 120 82 ~ 180 120 ~ 270 Test circuits Figure 1 Switching time test circuit Figure 2 Switching time waveforms Ru:= 1.5k0 nn wa , Base current waveform f ley Vin fr ( Ag (a1 | Ht oO WWA--~Q- Transistor Ve ~ 150V i ie under test Pw ke Py. ~ 50ns duty cycles 1%, Ic Collector current waveform - Ven ~6V 198 ROM Surface Mount TransistorsTransistor, NPN, 2SC Series 2SC4505 Electrical characteristic curves 126 T (%) 8 ~~ a I N\ & N\ COLLECTOR DISSIPATION: P, /P: max 2B op - NY 0 0. 2 50 75 100 125 180 AMBIENT TEMPERATURE : Ta (C) Figure 3 200) Ta 25C 160 2 = 2 120 us c x 2 Oo x 80 Oo Fe oO 4 a 40 Q oO 0 ip OmA 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : Vor (V) Figure 5 1000 i xo z) a= oa kb Zz Ww a a B10 oO Oo 1 0.001 0.01 0.1 COLLECTOR CURRENT : lc (A) Figure 7 < 2 L 0.1 Zz uJ ac ac > oO ac S wu 0.01 ! 8 0.001 02 04 06 O08 10 1t2 14 16 BASE TO EMITTER VOLTAGE : Var (V) Figure 4 1000 wi 2 z 100 << oO b z= wd c xc B 10 QO a COLLECTOR SATURATION VOLTAGE : Vee (sa) (V) 0.01 0.1 1 COLLECTOR CURRENT : Ic (A) Figure 6 3 Ic/la 20 9 a 001 0.001 0.01 0.1 1 COLLECTOR CURRENT : le (A) Figure 8 Surface Mount Transistors 1992$C4505 Transistor, NPN, 2SC Series 10 loft 10 Vv) VBE isat: 01 CE (sati4 - 2 g 0.01 o1 | COLLECTOR CURRENT : Ic (A) Figure 9 COLLECTOR SATURATION VOLTAGE : Vceisani( V ) 8 BASE SATURATION VOLTAGE Vaeisan ( 8 8 10 COLLECTOR OUTPUT CAPACITANCE : Con (pF) 1 50 COLLECTOR TO BASE VOLTAGE : Vca (V) Figure 11 Ordering information Package Tape Code T100 T200 Basic order quantity 1000 4000 2804505 * * * = Standard, * = Semi-standard, * = Special order TRANSITION FREQUENGY : fr (MHz) 500 Ta -25C Vee 10V EMITTER CURRENT te (A) Figure 10 200 ROnmM Surface Mount Transistors