GaAs IRED & PHOTO-THYRISTOR TLP 74 7J (TLP747)) OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. 6 5 SOLID STATE RELAY. ret SWITCHING POWER SUPPLY. * wo gua The TOSHIBA TLP747J consists of a photo-thyristor optically coupled 1203 to a gallium arsenide infrared emitting diode in a six lead plastic pte en28 628025 DIP package. S| 8 - +01 | 925-005 1.85~ 880 = e Peak Off-State Voltage: 600V Min. e Trigger LED Current : 15mA Max. 5 e On-State Current : 150mA Max. . UL Recognized : UL1577, File No. 67349 . BSI Approved : BS415 : 1990, BS7002 : 1989 (EN60950) JEDEC _ Certificate No. 7364, 7365 EIAJ _ SEMKO Approved : $S4330784 TOSHIBA 11-7A6 Certificate No. 9203174 Weight : 0.42g Isolation Voltage : 4000Vrms Min. P Vi . Option (D4) type IN CONFIGURATIONS (TOP VIEW) VDE Approved : DIN VDE0884 / 08.87 Certificate No. 74286 1 iy H 6 Maximum Operating Insulation Voltage : 6380VpK 2o-7 Ss le 5 Highest Permissible Over Voltage : 6000VpK 30 4 (Note) When a VDE0884 approved type is needed, Please 1: ANODE designate the Option (D4) 2+-CATHODE 3.:NC 7.62mm pich 10.16mm pich 4 : CATHODE standard type TLPX xX XF type 5 +: ANODE 6 : GATE e Creepage Distance : 7.0mm (Min.) 8.0mm (Min.) Clearance : 7.0mm (Min.) 8.0mm (Min.) Isolation Thickness : 0.5mm (Min.) 0.5mm (Min.) 549 TLP747) (TLP747)) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current Ip 60 mA pi Forward Current Derating (Ta = 39C) Alp/C -0.7 mA /C ) Peak Forward Current (100s pulse, 100pps) Ifp 1 A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Peak Forward Voltage (RGK =27kQ) VDRM 600 v Peak Reverse Voltage (RGK = 27k) VRRM 600 v mC On-StateCurrent It(RMS) 150 mA ae On-StateCurrent Derating (Ta: 25C) Alp / c 2.0 mA/C BG Peak On-StateCurrent (100s pulse, 120pps) Ipp 3 A Peak One Cycle Surge Current ITSM 2 A Peak Reverse Gate Voltage VGM 5 Vv Power Dissipation Pp 150 mW Power Dissipation Derating (Ta= 25C) 4Pp/C 2.0 mW /C Junction Temperature Tj 100 C Storage Temperature Range Tsig 55~125 C Operating Temperature Range Topr 40~100 C Lead Soldering Temperatur(10 sec.) Tsold 260 C Total Package Power Dissipation Pr 250 mW Total Package Power Dissipation Derating (Ta= 25C) 4Pp/C 3.3 mW /C Isolation Voltage (AC, Imin., R. H. * 60%) (Note) BVs 4000 Vrms Note: Device considered a two terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together.TLP 747) (TLP747J) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT qa Forward Voltage VR Ip=10mA 1.0 | 1.15 1.3 Vv | Reverse Current IR VR=5V 10 | uA Capacitance Cr V=0, f=1MHz _ 30 ~ pF VAK =600V Ta=25C | 10 | 5000 | nA Off-State Current IDRM RGK = 27k Tazescl o 1 150 | wA mC R c I VK A =600V Ta = 25C _ 10 | 5000 nA a everse Current RRM RGK =27k0 Ta =85C _ 1 a uA HIG On-State Voltage VIM Ilpy = 100mA 0.9 1.3 v Holding Current Iq RGK =27k2 _ 0.2 mA Off-State dv/dt dv/dt VaAK =420V, RoK =27kQ 10 |Vius V=0, f=1MHz Capacitance Cj Anode to Gate 20 _ pF Gate to Cathode = 350 COUPLED CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Trigger LED Current Ipt VaK=8V, RGK=27k0 _ 15 mA Turn-on Time ton teeann _ 10 _ ws Coupled dv/dt dy /dt Vg=500V, RaK =27kQ 500 |Vius Capacitance(Input to Output) Cs Vg=0, f=1MHz _ 0.8 pF Isolation Resistance Rg Vg=500V, R. H. 560% 5x10!) 1014 _ 2 AC, 1 minute 4000 _ _ Isolation Voltage BVsS AC, 1 second, in oil 10000; Vrms DC, 1 minute, in oil 10000 Vdc RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Vac _ _ 240 | Vac Forward Current Ip 20 25 mA Operating Temperature Topr 25 85 C Gate to Cathode Resistance RGK ~ 10 27 | ka Gate to Cathode Capacity Cok _ 0.01 0.1 uF 551 TLP 747) (TLP7471) IratMs) Ta 100 250 be doh _4 - 3 80} - 5 200 pe -b 5 8 2 peop Ley. - e 1-4 ' bf fe a 5 Se 60 of ot 150] . re ZE & = _ N ae an <A ou. as mE 40}-4-- 7 _ 2 E 109 pf 3 } of < ye - 4 - = = Q 20) jo: 2 50 : { o a i 1 < - }- - | a } | NL | : ol i 20 0 20 40 60 gu 100120 -20 0 20 40 Go 80 100-420 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) lep DR Te Ve PULSE WIDTIL & 100p8 Ta=28C 3 Ta= 25C 2 ee! : E. t a a 5 fA a 4 z = 2 z g =e < 2a = 88 z 35 2 eco 1 0. 3 e438 lo? 3 oh 3 10 bs 08 1.0 1.2 14 16 18 DUTY CYCLE RATIO. DR FORWARD VOLTAGE Ve (V) AVy/ATa Ip Ipp - Veep oy | (mV /C) (mA} Ipp wy m oI E < a Ee 5 20 S ~~ ze eo Fes az D ot n ies ' ev iH Th a : da Ce a ' < BR oly tf _f- = gs : lh. & PULSE WIDTH 5 10p8 Se Tl, a REPETITIVE as 0.8 | hyip I R FREQUENCY = 100Hz ES | | 2 Ta=25C 88 o305 35 10 30 50 de 10 14 18 22 26 FORWARD CURRENT ly (mA PULSE FORWARD VOLTAGE Vpp (VpCRITICAL RATE OF RISE OF (ys) imA) TRIGGER LED CURRENT [py (mA) TURN.ON TIME to, ty HOLDING CURRENT OFF-STATE VOLTAGE dv/dt (v/,s) ton IF 10 20 30 40 FORWARD CURRENT If (mA) Ipr - Ta Rox = 10k 0 20 40 60 VaK=6 R= 1002 80 AMBIENT TEMPERATURE Ta (C} I Ta RGK = 10kN 20 40 60 80 AMBIENT TEMPERATURE Ta (*C) dv/dt Cok Ta=85C Vak =400 =27KN 0.001 0.003 0.005, 0.01 GATE-CATHODE CAPACITANCE CoK (#F) 100 100 CRITICAL RATE OP RISE OF OFF-STATE VOLTAGE dv/dt (v/ya) (mA) lpr TRIGGER LED CURRENT (mA) MH HOLDING CURRENT dv/dt - Rok Vak 2200V TLP747) Ta=25C 3 6 10 3050 GATE-CATHODE RESISTANCE Rox (kN) IrT Rak 3 5 0 30 50 100 GATE-CATHODE RESISTANCE Rox (kf) IH - RGK 100 200 Tas25C 3 & 10 30.60=(50 100 GATE-CATHQODE RESISTANCE RGxK (kf) 200