VS-43CTQ100PbF, VS-43CTQ100-N3
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Revision: 11-Oct-11 1Document Number: 94223
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 20 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 20 A
VR100 V
VF at IF0.67 V
IRM max. 11 mA at 125 °C
TJ 175 °C
Diode variation Common cathode
EAS 7.50 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 40 A
VRRM 100 V
IFSM tp = 5 μs sine 850 A
VF20 Apk, TJ = 125 °C (per leg) 0.67 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-43CTQ100PbF VS-43CTQ100-N3 UNITS
Maximum DC reverse voltage VR100 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and
with rated VRRM
applied
850
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 2Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
20 A TJ = 25 °C 0.81
V
40 A 0.98
20 A TJ = 125 °C 0.67
40 A 0.81
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
1mA
TJ = 125 °C 11
Threshold voltage VF(TO) TJ = TJ maximum 0.71 V
Forward slope resistance rt0.43 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1480 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package 1.0
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB 43CTQ100
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 3Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
0.8 1.2
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.40.2 0.6 1.0 1.4 1.8
1000
1.6
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
1
10
100
0.001
0.01
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
80 100
1000
4020 60
TJ = 150 °C
TJ = 175 °C
TJ = 50 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
10 000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
1000
TJ = 25 °C
080
100
4020 60
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1 100
0.01
10
Single pulse
(thermal resistance) Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 4Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
030
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
201510525
DC
100
110
120
130
140
150
160
170
180
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
025
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
5101520 30
0
5
10
15
20
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
1000
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 5Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-43CTQ100PbF 50 1000 Antistatic plastic tube
VS-43CTQ100-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220ABPbF www.vishay.com/doc?95225
TO-220AB-N3 www.vishay.com/doc?95028
SPICE model www.vishay.com/doc?95065
Device code
62 43 5 7
43 C T Q 100 PbFVS-
1
2- Current rating (40 A)
3- Circuit configuration
C = Common cathode
4- Package
T = TO-220
5- Schottky “Q” series
6- Voltage rating (100 = 100 V)
7-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
1-Vishay Semiconductors product
Environmental digit
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
13
2
D
D1
H1
Q13
2
C
C
DD
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
MM
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1 (2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1 (6)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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