BCP54...BCP56 NPN Silicon AF Transistors 4 * For AF driver and output stages * High collector current 3 * Low collector-emitter saturation voltage 2 * Complementary types: BCP51...BCP53 (PNP) 1 Pin Configuration VPS05163 Type Marking BCP54 BCP54 1=B 2=C 3=E 4=C - - SOT223 BCP54-10 ...-10 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 ...-16 1=B 2=C 3=E 4=C - - SOT223 BCP55 BCP55 1=B 2=C 3=E 4=C - - SOT223 BCP55-10 ...-10 1=B 2=C 3=E 4=C - - SOT223 BCP55-16 ...-16 1=B 2=C 3=E 4=C - - SOT223 BCP56-10 ...-10 1=B 2=C 3=E 4=C - - SOT223 BCP56-16 ...-16 1=B 2=C 3=E 4=C - - SOT223 1 Package Jan-28-2005 BCP54...BCP56 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP54 45 BCP55 60 BCP56 80 Collector-emitter voltage RBE 1k Unit VCER BCP54 45 BCP55 60 BCP56 100 Collector-base voltage VCBO BCP54 45 BCP55 60 BCP56 100 Emitter-base voltage VEBO BCP54 5 BCP55 5 BCP56 5 1 A Collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg mA TS 124C -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jan-28-2005 BCP54...BCP56 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BCP54... 45 - - IC = 10 mA, IB = 0 , BCP55... 60 - - IC = 10 mA, IB = 0 , BCP56-10, -16 80 - - IC = 100 A, IE = 0 , BCP54... 45 - - IC = 100 A, IE = 0 , BCP55... 60 - - IC = 100 A, IE = 0 , BCP56-10, -16 100 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A I CBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 20 DC current gain1) - h FE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, V CE = 2 V, BCP54 / BCP55 40 - 250 IC = 150 mA, V CE = 2 V, BCP54-10...BCP56-10 63 100 160 IC = 150 mA, V CE = 2 V, BCP54-16...BCP56-16 100 160 250 IC = 500 mA, V CE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, V CE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 3 Jan-28-2005 BCP54...BCP56 DC current gain hFE = (IC) VCE = 2 V 10 3 h FE Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 BCP 54...56 EHP00268 5 C EHP00271 mA 10 3 100 C 25 C 10 2 BCP 54...56 10 4 -50 C 5 100 C 25 C -50 C 10 2 10 1 10 1 5 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 C 4 IC = (V BEsat), hFE = 10 C BCP 54...56 0.2 V 0.8 V CEsat EHP00270 10 4 CBO mA BCP 54...56 EHP00269 nA max 10 3 10 0.6 0.4 Collector cutoff current ICBO = (TA) VCBO = 30 V Base-emitter saturation voltage 10 4 0 3 100 C 25 C -50 C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 Jan-28-2005 BCP54...BCP56 Transition frequency fT = (IC) VCE = 10 V 10 3 fT Total power dissipation Ptot = (TS) BCP 54...56 EHP00267 1800 mA MHz 5 1500 1350 IF 1200 1050 10 2 900 750 5 600 450 300 150 10 1 10 0 5 10 1 5 10 2 mA 0 0 10 3 15 30 45 60 75 90 105 120 C 150 TS C Permissible Pulse Load RthJS = (tp ) Permissible Pulse Load Ptotmax/P totDC = (tp) 10 2 10 3 Ptotmax/PtotDC K/W RthJS 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 -1 10 -2 -7 10 10 -6 10 -5 10 -4 10 -3 10 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jan-28-2005 Package SOT223 Package Outline 1.6 0.1 6.5 0.2 0.1 MAX. 2 B 0.5 MIN. 1 +0.2 acc. to DIN 6784 3.5 0.2 4 7 0.3 3 0.1 15 MAX. A 3 0.28 0.04 2.3 0.7 0.1 4.6 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout Manufacturer Date code (Year/Calendarweek) 2003, July Type code BCP52-16 Pin 1 Example Packing Code E6327: Reel o180 mm = 1.000 Pieces/Reel Code E6433: Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. Pin 1 6.8 12 7.55 8 1.75 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). 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