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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2004 Fairchild Semiconductor Corporation BAV70 / 74, Rev. D1
BAV70 / 74
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady lim its. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Charac t eris tics
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Re petitive Reverse Voltage BAV70
BAV74 70
50 V
V
I
F(AV)
Average Rect ified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Wi dth = 1.0 second
Pulse Wi dth = 1.0 microsecond 1.0
2.0 A
A
T
STG
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature 150 °C
Symbol Parameter Value Units
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Conditions Min. Max. Units
V
R
Breakdown Voltage BAV70
BAV74 I
R
= 100µA
I
R
= 5.0µA75
50 V
V
V
F
Forward Voltage BAV70
BAV74
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
I
F
= 100mA
715
855
1.0
1.25
1.0
mV
mV
V
V
V
I
R
Revers e Leakage BAV70
BAV74
V
R
= 25V, T
A
= 150°C
V
R
= 70V
V
R
= 70V, T
A
= 150°C
V
R
= 50V
V
R
= 50V, T
A
= 150°C
60
5.0
100
100
100
µA
µA
µA
nA
µA
C
T
Total Capacitance BAV70
BAV74 V
R
= 0V, f = 1.0MHz
V
R
= 0V, f = 1.0MHz 1.5
2.0 pF
pF
t
rr
Reverse Recovery Time BAV70
BAV74
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100
6.0
4.0
ns
ns
BAV70 / 74
Connection Diagram
12
3
A4
1
2
3
SOT-23
3
12
BAV70 A4 BAV74 JA
MARKING
©2004 Fairchild Semiconductor Corporation
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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