T3 23 BAP64-05W SO Silicon PIN diode Rev. 3.2 -- 1 February 2019 1 Product data sheet Product profile 1.1 General description Two planar PIN diodes in common cathode configuration in a SOT323 small plastic SMD package. 1.2 Features and benefits * * * * * * * High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz AEC-Q101 qualified 1.3 Applications * RF attenuators and switches BAP64-05W NXP Semiconductors Silicon PIN diode 2 Pinning information Table 1. Discrete pinning Pin Description Simplified outline 1 anode (a1) 2 anode (a2) 3 common cathode Symbol 3 3 2 1 sym136 1 2 top view 3 Ordering information Table 2. Ordering information Type number Package BAP64-05W 4 Name Description Version - plastic surface-mounted package; 3 leads SOT323 Marking Table 3. Marking Type number Marking Description BAP64-05W 5W% % = t: made in Malaysia % = W: made in China Table 4. Marking 5 Type number Marking code BAP64-05W 5W- Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Values are specified per diode. BAP64-05W Product data sheet Symbol Parameter VR Conditions Min Max Unit reverse voltage - 100 V IF forward current - 100 mA Ptot total power dissipation - 240 mW Tstg storage temperature -65 +150 C Tj junction temperature -65 +150 C Tsp 90 C All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 2 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 6 Thermal characteristics Table 6. Thermal characteristics BAP64-05W Product data sheet Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 Typ Unit 250 K/W (c) NXP B.V. 2019. All rights reserved. 3 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 7 Characteristics Table 7. Characteristics Values are specified per diode; Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 60 V - - 10 A VR = 20 V - - 1 A VR = 0 V - 0.52 - pF VR = 1 V - 0.37 - pF - 0.23 0.35 pF IF = 0.5 mA - 20 40 IF = 1 mA - 10 20 IF = 10 mA - 2.0 3.8 IF = 100 mA - 0.7 1.35 - 1.55 - s - 1.2 - nH Cd diode capacitance see Figure 1; f = 1 MHz; VR = 20 V rD diode forward resistance L charge carrier life time LS series inductance [1] see Figure 2; f = 100 MHz; when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA [1] Guaranteed on AQL basis: inspection level S4, AQL 1.0. BAP64-05W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 4 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 7.1 Graphical data aaa-017759 500 Cd (fF) rD () aaa-017777 102 400 10 300 200 1 100 0 0 4 8 12 16 VR (V) 20 10-1 10-1 1 10 IF (mA) 102 f = 1 MHz; Tj = 25 C. f = 100 MHz; Tj = 25 C. Figure 1. Diode capacitance as a function of reverse voltage; typical values Figure 2. Forward resistance as a function of forward current; typical values Lins (dB) aaa-017761 0 -0.5 ISL (dB) aaa-017760 0 -1 (1) (2) (3) (4) -5 -1.5 -10 -2 -15 -2.5 0.5 1 -20 1.5 2 2.5 f (GHz) 3 Tamb = 25 C Diode zero biased and inserted in series with a 50 stripline circuit Tamb = 25 C 1. IF = 100 mA 2. IF = 10 mA 3. IF = 1 mA 4. IF = 0.5 mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer T-network Figure 3. Isolation of the diode as a function of frequency; typical values Figure 4. Insertion loss of the diode as a function of frequency; typical values -25 0.5 BAP64-05W Product data sheet 1 1.5 2 2.5 f (GHz) 3 All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 5 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode aaa-018155 150 IP2 (dB) 125 100 (2) (1) 75 50 25 0 10-1 1 IF (mA) 10 Tamb = 25 C 1. f = 900 MHz 2. f = 1800 MHz Figure 5. Second-order intercept point as a function of forward current; typical values BAP64-05W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 6 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 8 Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC SOT323 JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Figure 6. Package outline SOT323 BAP64-05W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 7 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 9 Abbreviations Table 8. Abbreviations Acronym Description AQL acceptable quality level PIN P-type, intrinsic, N-type SMD surface-mounted device S4 special inspection level 4 10 Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAP64-05W v.3.2 20190201 Product data sheet - BAP64-05W v.3.1 Modifications * changed condition for reverse current for VR from 100 V to 60 V BAP64-05W v.3.1 20181211 Modifications * adapted marking code BAP64-05W v.3 20180713 Modifications * changed IRconditions at characteristics * adapted the layout of the data sheet BAP64-05W v.2 20150428 Modifications * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. * Legal texts have been adapted to the new company name where appropriate. * AEC-Q101 qualified BAP64-05W v.1 (9397 750 07192) 20000713 BAP64-05W Product data sheet Product data sheet Product data sheet Product data sheet Product specification - BAP64-05W v.3 - BAP64-05W v.2 - BAP64-05W v.1 - All information provided in this document is subject to legal disclaimers. Rev. 3.2 -- 1 February 2019 - (c) NXP B.V. 2019. All rights reserved. 8 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode 11 Legal information 11.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. 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Rev. 3.2 -- 1 February 2019 (c) NXP B.V. 2019. All rights reserved. 9 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 11.4 Trademarks BAP64-05W Product data sheet Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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All rights reserved. 10 / 11 BAP64-05W NXP Semiconductors Silicon PIN diode Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 Product profile .................................................... 1 General description ............................................1 Features and benefits ........................................1 Applications ........................................................1 Pinning information ............................................ 2 Ordering information .......................................... 2 Marking .................................................................2 Limiting values .................................................... 2 Thermal characteristics ......................................3 Characteristics .................................................... 4 Graphical data ................................................... 5 Package outline ...................................................7 Abbreviations ...................................................... 8 Revision history .................................................. 8 Legal information ................................................ 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. (c) NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 February 2019 Document identifier: BAP64-05W