SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL FZT688B
COMPLEMENTARY TYPE - FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 12 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC4A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 12 V IC=100µA
V(BR)CEO 12 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=10V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA*
Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE
=2V
Static Forward Current Transfer
Ratio
hFE 500
400
100
IC=0.1A, VCE
=2V*
IC=3A, VCE
=2V*
IC=10A, VCE
=2V*
Transition Frequency fT150 MHz IC=50mA,VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5Vf=1MHz
Output Capacitance Cobo 40 pF VCB
=10V,f=1MHz
Switching Times ton
toff
40
500
ns
ns
IC=500mA, IB1=50A
IB2=50mA, VCC
=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT688B FZT688B
C
C
E
B
3 - 218 3 - 217
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h- Typical Gain
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
T
amb
=25°C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100 I
C
/I
B
=100
-55°C
+25°C
+100°C
+175°C
0
0
I
C
-Collector Current (A)
1
0.1
Safe Operating Area
V
CE -
Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
0.1V
10
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL FZT688B
COMPLEMENTARY TYPE - FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 12 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC4A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 12 V IC=100µA
V(BR)CEO 12 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=10V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA*
Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE
=2V
Static Forward Current Transfer
Ratio
hFE 500
400
100
IC=0.1A, VCE
=2V*
IC=3A, VCE
=2V*
IC=10A, VCE
=2V*
Transition Frequency fT150 MHz IC=50mA,VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5Vf=1MHz
Output Capacitance Cobo 40 pF VCB
=10V,f=1MHz
Switching Times ton
toff
40
500
ns
ns
IC=500mA, IB1=50A
IB2=50mA, VCC
=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT688B FZT688B
C
C
E
B
3 - 218 3 - 217
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h- Typical Gain
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
T
amb
=25°C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100 I
C
/I
B
=100
-55°C
+25°C
+100°C
+175°C
0
0
I
C
-Collector Current (A)
1
0.1
Safe Operating Area
V
CE -
Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
0.1V
10
