2N6307
NPN Silicon
High Voltage
Transistors
Features
• High current capability
• Fast switching speed
• High power TO-3 package
• Horizontal deflection colour TV
• Switching regulators
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 400 V
VCES Collector- Emitter Voltage 1000 V
VEBO Emitter-Base Voltage 8.0 V
IC Collector Current 10 A
ICM Peak Collector Current 15 A
IB Base Current 3.0 A
PC Collector power dissipation 100 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) 1000 --- --- Vdc
ICES Collector Cutoff Current
(VCE=1000Vdc, VBE=0) --- --- 1.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=8.0Vdc, IC=0) --- --- 1.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio*
(IC=8.0Adc, VCE=5.0Vdc) 15 --- --- ---
VCE(sat) Collector-Emitter Saturation Voltage*
(IC=8.0Adc, IB=2.5Adc) --- --- 3.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage*
(IC=8.0Adc,IB=2.5Adc) --- --- 2.2 Vdc
fT Transition Frequency
(IC=0.5A dc, VCE=10V dc) --- 10 --- MHz
ton Turn on Time
(IC=5.0Adc, VCE=250Vdc,
IB1=1.0Adc) --- 0.2 --- us
tF Full time
(VCE=40V, IC=8.0A, IB1=IB2=2.5A) --- --- 1.0 us
tS Storage Time
Fall Time IC=5.0A, VCE=250V,
IB1=IB2=1.0A --- --- 1.7
0.3 us
*Pulsed: Pulse duration=300us, duty cycle 1.5%
TO-3
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
H
V
U
L
G
B
Q
1
2
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Revision: 2 2003/04/30
omponents
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