! " * + ,# -.#. #" . #- / / / / $ " -, *$ / / / . 666;" . 666;" " % % !"#$ % &'() !"#$ % !"#$ % &'() !"#$ % 0 12 3 4 5 8 2 9: !$ % & () 6$ %78"% & () 6$ %78"% /7( 6 ($ )$ - *'#$ $%+$, *'#$ -$$ #$%$% & '& & " 7=7. "" . , " 7 7", 7*=7A 7- (B #C 7."=7. 7$" "" *7" 7 7,=7, 7A $ 7, ( / (B #C 7 7, #C 0< / 8"="% 1=9 - )+" /)8"% 1=944 29 2944 4 1>3 :91 9;944 ") 7?@ 8 &0 5 91< D 944 8 / 8"="% 8"% 8"% /7 - 1 #1 /# 78"% &1 91 HI392 @14 :96*-"- J 4 E0 5 91< 3 4 8 "/ &1 91 8"% (&>9 "# % #*, ., ( ( >= E *- 3=13 3=3 "F. F 3 3:5 9> 29G> - 7" ( . " !"%7>: 9K &3 4 1 /I99::1/L :I 4 ( 39:92=9414 39 C 2151/> /33>394&>>7&:9 495>9& 2393 >16 I ( 1& 2393 3 3: 49( 9&3 4 ( 391>391 3>&9( 933 36 9K92>L&19 (&: 1 (121 21: 7&49(39> : 6 ms11nec063t1.xls - 1 20 A 18 18 17V 15V 13V 11V 9V 7V 16 14 12 17V 15V 13V 11V 9V 7V 16 14 12 10 10 8 8 6 6 4 4 2 IC 2 IC ms11nec063t1.xls - 2 20 A 0 0 0 1 VCE 2 3 4 5 0 V 26&69>&>33 37&$ )"% ms11nec063t1.xls - 3 3 mWs 2,5 2 1 VCE 2 3 4 26&69>&>33 37&$ )"% 8"% - +" ms11nec063t1.xls - 4 3 8"% - +" / mWs 2,5 2 Eon 1,5 1,5 1 1 Eon Eoff 0,5 Eoff 0,5 E E 0 0 0 5 IC 10 15 20 25 0 A 26-><9#<94424= RG 100 200 300 400 500 26.><9#<94424= ms11nec063t1.xls - 5 20 V 5 V &>: / ms11nec063t1.xls - 6 10 nF 18 4?@ 100V 16 14 300V Cies 1 12 10 8 Coes 0,1 6 4 VGE 0 0,01 0 10 QGate 20 30 40 50 26"&623233 3 Cres C 2 60 0 nC VCE 10 20 V 30 26*&63&3 36 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 Tj = 150 C VGE = 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) Tj = 150 C VGE = 15 V tsc = 10 s Lext < 25 nH Tj = 150 C VGE = 15 V Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode (c) by SEMIKRON 0698 B 16 - 3 # # !" !