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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
v01.0610
General Description
Features
Functional Diagram
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Ampli ers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The ampli er
has been optimized to provide 0.7 dB noise gure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise gure, please see the HMC617LP3(E).
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Electrical Speci cations, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
• UHF Reallocation Applications
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 810 - 960 700 - 1000 MHz
Gain 12.5 14.5 11.5 14.5 dB
Gain Variation Over Temperature 0.005 0.01 0.005 0.01 dB / °C
Noise Figure 0.7 1.0 0.7 1.0 dB
Input Return Loss 13 14 dB
Output Return Loss 12 12 dB
Reverse Isolation 20 22 dB
Output Power for 1dB Compression (P1dB) 21.5 21 dBm
Saturated Output Power (Psat) 22 22 dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing) 36 36 dBm
Supply Current (Idd) 73 73 mA
*Rbias resistor value sets current, see application circuit herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
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7 - 2
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
-25
-15
-5
5
15
25
0.25 0.5 0.75 1 1.25 1.5 1.75 2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
v01.0610
0
0.4
0.8
1.2
1.6
0.6 0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.6 0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.6 0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
0.6 0.7 0.8 0.9 1 1.1
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
Output Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
0.6 0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3 / 376LP3E
v01.0610
P1dB vs. Temperature @ Idd = 73 mA Psat vs. Temperature @ Idd = 73 mA
Output IP3 vs. Temperature @ Idd = 73 mA
15
17
19
21
23
25
0.7 0.75 0.8 0.85 0.9 0.95 1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
0.7 0.75 0.8 0.85 0.9 0.95 1
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
15
17
19
21
23
25
0.7 0.75 0.8 0.85 0.9 0.95 1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
Gain, Noise Figure &
Power vs. Supply Current @ 900 MHz
12
14
16
18
20
22
24
0.4
0.6
0.8
1
60 70 80 90 100 110 120
GAIN
P1dB
Noise figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY CURRENT (mA)
Typical Supply Current vs. Vdd
with Rbias = 10 Ohms
Vdd (Vdc) Idd (mA)
+4.5 73.0
+5.0 73.4
+5.5 73.6
Drain Bias Voltage (Vdd) +8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc) +15 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 11.83 mW/°C above 85 °C) 0.769 W
Thermal Resistance
(channel to ground paddle) 84.5 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings
Idd (mA) Rbias (Ohms)
60 12
70 10
80 9.1
100 6.8
120 5.1
Recommended Bias Resistor Values
for Various Idd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3 / 376LP3E
v01.0610
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC376LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H376
XXXX
HMC376LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H376
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
Pin Number Function Description Interface Schematic
1, 4, 5, 7, 9,
12 - 14, 16 N/C No connection necessary. These pins may be connected
to RF/DC ground. Performance will not be affected.
2RFIN This pin is matched to 50 Ohms with a 47 nH
inductor to ground. See application circuit.
3, 6, 10 GND These pins and package bottom must be
connected to RF/DC ground.
8Res
This pin is used to set the DC current of the ampli er
by selection of external bias resistor.
See application circuit.
11 RFOU T This pin is AC coupled and matched
to 50 Ohms from 0.7 - 1.0 GHz.
15 Vdd Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Pin Descriptions
Application Circuit
Note 1: L1, L2 and C1 should be located as close to the pins as possible.
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3 / 376LP3E
v01.0610
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3 / 376LP3E
v01.0610
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 - J4 DC Pin
C1 1000 pF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 15000 pF Capacitor, 0603 Pkg.
L1 18 nH Inductor, 0603 Pkg.
L2 47 nH Inductor, 0603 Pkg.
R1 Resistor, 0402 Pkg.
U1 HMC376LP3 / HMC376LP3E Ampli er
PCB [2] 112580 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 112585 [1]
