CCD area image sensor
Low readout noise, high resolution
(pixel size: 12 Njm)
S10140/S10141 series
www.hamamatsu.com 1
S10140/S10141 series is a family of back-thinned FFT-CCD image sensors speci¿ cally designed for low-light-level detection in
scienti¿ c applications. By using the binning operation, S10140/S10141 series can be used as a linear image sensor having a
long aperture in the direction of the device length. This makes S10140/S10141 series ideally suited for use in spectrophotom-
etry. The binning operation offers signi¿ cant improvement in S/N and signal processing speed compared with conventional
methods by which signals are digitally added by an external circuit. S10140/S10141 series also features low noise and low dark
signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic
range.
S10140/S10141 series has an effective pixel size of 12 × 12 Njm and is available in image areas ranging from 12.288 (H) × 1.464
(V) mm2 (1024 × 122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels).
Features Applications
Low readout noise: 4 e-rms typ.
High resolution: pixel size 12 × 12 Njm
Non-cooled type: S10140 series
One-stage TE-cooled type: S10141 series
Line, pixel binning, area scanning
Wide spectral response range
Wide dynamic range
MPP operation
High UV sensitivity with good stability
Same pin connections as S7030/S7031 series
Greater than 90% quantum ef¿ ciency at peak sensitivity
wavelength
Fluorescence spectrometer, ICP
Industrial inspection requiring
Semiconductor inspection
DNA sequencer
Low-light-level detection
Raman spectroscopy
Selection guide
Type No. Cooling Number of total pixels Number of active
pixels
Active area
[mm (H) × mm (V)]
Suitable multichannel
detector head
S10140-1007
Non-cooled
1044 × 128 1024 × 122 12.288 × 1.464
C10150
S10140-1008 1044 × 256 1024 × 250 12.288 × 3.000
S10140-1009 1044 × 512 1024 × 506 12.288 × 6.072
S10140-1107 2068 × 128 2048 × 122 24.576 × 1.464
S10140-1108 2068 × 256 2048 × 250 24.576 × 3.000
S10140-1109 2068 × 512 2048 × 506 24.576 × 6.072
S10141-1007S
One-stage
TE-cooled
1044 × 128 1024 × 122 12.288 × 1.464
C10151
S10141-1008S 1044 × 256 1024 × 250 12.288 × 3.000
S10141-1009S 1044 × 512 1024 × 506 12.288 × 6.072
S10141-1107S 2068 × 128 2048 × 122 24.576 × 1.464
S10141-1108S 2068 × 256 2048 × 250 24.576 × 3.000
S10141-1109S 2068 × 512 2048 × 506 24.576 × 6.072
CCD area image sensor S10140/S10141 series
2
General ratings
Absolute maximum ratings (Ta=25 °C)
Operating conditions (MPP mode, Ta=25 °C)
Parameter S10140 series S10141 series
Pixel size 12 (H) × 12 (V) m
Vertical clock phase 2 phases
Horizontal clock phase 2 phases
Output circuit One-stage MOSFET source follower
Package 24-pin ceramic DIP (refer to dimensional outlines)
Window*1Quartz glass AR-coated sapphire
*1: Temporary window type (ex. S10140-1107N) is available upon request.
Parameter Symbol Min. Typ. Max. Unit
Operating temperature*2To pr -50 - +50 ° C
Storage temperature Tstg -50 - +70 °C
Output transistor drain voltage VOD -0.5 - +30 V
Reset drain voltage VRD -0.5 - +18 V
Vertical input source voltage VISV -0.5 - +18 V
Horizontal input source voltage VISH -0.5 - +18 V
Vertical input gate voltage VIG1V, VIG2V -10 - +15 V
Horizontal input gate voltage VIG1H, VIG2H -10 - +15 V
Summing gate voltage VSG -10 - +15 V
Output gate voltage VOG -10 - +15 V
Reset gate voltage VRG -10 - +15 V
Transfer gate voltage VTG -10 - +15 V
Vertical shift register clock voltage VP1V, VP2V -10 - +15 V
Horizontal shift register clock voltage VP1H, VP2H -10 - +15 V
*2: Package temperature (S10140 series), chip temperature (S10141 series)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 23 24 25 V
Reset drain voltage VRD 11 12 13 V
Output gate voltage VOG 2.5 3 3.5 V
Substrate voltage VSS -0-V
Test point
vertical input source VISV -VRD -V
horizontal input source VISH -VRD -V
vertical input gate VIG1V, VIG2V -9 -8 - V
horizontal input gate VIG1H, VIG2H -9 -8 - V
Vertical shift register
clock voltage
High VP1VH, VP2VH 2.5 3 3.5 V
Low VP1VL, VP2VL -9 -8 -7
Horizontal shift register
clock voltage
High VP1HH, VP2HH 456
V
Low VP1HL, VP2HL -9 -8 -7
Summing gate voltage High VSGH 456
V
Low VSGL -9 -8 -7
Reset gate voltage High VRGH 456
V
Low VRGL -9 -8 -7
Transfer gate voltage High VTGH 2.5 3 3.5 V
Low VTGL -9 -8 -7
External load resistance RL90 100 110 k:
CCD area image sensor S10140/S10141 series
3
Electrical characteristics (Ta=25 °C)
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - 250 500 kHz
Vertical shift register
capacitance
S1014*-1007
CP1V, CP2V
- 800 -
pF
S1014*-1008/-1107 - 1600 -
S1014*-1108/-1009 - 3200 -
S1014*-1109 - 6400 -
Horizontal shift register
capacitance
S1014*-1007/-1008/-1009 CP1H, CP2H -80-
pF
S1014*-1107/-1108/-1109 - 150 -
Summing gate capacitance CSG -30-pF
Reset gate capacitance CRG -30-pF
Transfer gate capacitance S1014*-1007/-1008/-1009 CTG -50-
pF
S1014*-1107/-1108/-1109 - 70 -
Charge transfer ef¿ ciency*3CTE 0.99995 0.99999 - -
DC output level*4Vout 16 17 18 V
Output impedance*4Zo - 8 - k:
Power consumption*4 *5P-4-mW
*3: Charge transfer ef¿ ciency per pixel, measured at half of the full well capacity
*4: The values depend on the load resistance. (Typ. VOD=24 V, Load resistance=100 k:)
*5: Power consumption of the on-chip ampli¿ er plus load resistance
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat - Fw × Sv - V
Full well capacity
Vertical
Fw
45 60 -
ke-
Horizontal 120 150 -
Summing 150 200 -
CCD node sensitivity Sv 4 5 6 V/e-
Dark current*6
MPP mode
25 °C DS - 100 1000 e-/pixel/s
0 °C - 5 50
Readout noise*7Nr - 4 18 e- rms
Dynamic range*8Line binning DR 30000 37500 - -
Area scanning 15000 18500 - -
Photo response non-uniformity*9PRNU - ±3 ±10 %
Spectral response range O- 200 to 1100 - nm
Blemish
Point defect*10 White spots
-
--0-
Black spots - - 10 -
Cluster defect*11 --3-
Column defect*12 --0-
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -50 °C, Operating frequency is 20 kHz.
*8: Dynamic range = Full well/Readout noise
*9: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
*10: White spots
Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C.
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the
saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more contiguous defective pixels
Fixed pattern noise (peak to peak)
Signal × 100
[%]Photo response non-uniformity (PRNU) =
CCD area image sensor S10140/S10141 series
Spectral response (without window)*13
Dark current vs. temperatureSpectral transmittance characteristics
4
*13:
Spectral response with quartz glass or AR-coated sapphire are decreased according to the spectral transmittance characteristics of window material.
Type No. Window material
S10140 series Quartz glass*14
(option: window-less)
S10141 series AR-coated sapphire*15
(option: window-less)
S10142 series
(two-stage TE-cooled types,
made to order)
AR-coated sapphire*15
(option: window-less)
*14: Resin sealing
*15: Hermetic sealing
Window material
Quantum efficiency (%)
Wavelength (nm)
(Typ. Ta=25 °C)
0
200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
Front-illuminated
Back-thinned
S10140/S10141
series
Front-illuminated
(UV coat)
0
10
100 200
Wavelength (nm)
Transmittance (%)
300 400 500 600 700 800 900
1000 1100 1200
20
30
40
50
60
70
80
90
100 (Typ. Ta=25 °C)
Quartz window
AR coated sapphire
-50 -40 -30 -20 0-10 10 20 30
Temperature (°C)
0.01
0.1
1
10
100
1000
Dark current (e-/pixel/s)
(Typ.)
KMPDB0255EA
KMPDB0254EB
KMPDB0110EA
CCD area image sensor S10140/S10141 series
5
Device structure (Conceptual drawing of top view)
23
22
21
20
14
15
24
1
2
12
11
893
4
5
2-bevel
signal out
2n
4 blank pixels 4 blank pixels
V=122, 250, 50
H=1024, 2048
4-bevel
Thinning
Thinning
12345
2
3
4
5
V
H
6-bevel 6-bevel
2
nsignal out
13
10
KMPDC0244EB
CCD area image sensor S10140/S10141 series
Line binning
Timing chart
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG*16 Pulse width
S1014*-1007
Tpwv
1.5 2 -
s
S1014*-1008/-1107 34-
S1014*-1009/-1108 68-
S1014*-1109 12 16 -
Rise and fall time Tprv, Tpfv 20 - - ns
P1H, P2H*16
Pulse width Tpwh 1000 2000 - ns
Rise and fall time Tprh, Tpfh 10 - - ns
Duty ratio - 40 50 60 %
SG
Pulse width Tpws 1000 2000 - ns
Rise and fall time Tprs, Tpfs 10 - - ns
Duty ratio - 40 50 60 %
RG Pulse width Tpwr 100 1000 - ns
Rise and fall time Tprr, Tpfr 5 - - ns
TG – P1H Overlap time Tovr 1 2 - s
*16: The clock pulses should be overlapped at 50% of clock pulse amplitude.
Integration period
(Shutter must be open)
Vertical binning period
(Shutter must be closed)
P1V
P2V, TG
P1H
P2H, SG
Readout period (Shutter must be closed)
3..126
3..254
3..510
127
255
511
128←
256←
512←
122 + 6 (bevel): S1014*-1007/-1107
250 + 6 (bevel): S1014*-1008/-1108
506 + 6 (bevel): S1014*-1009/-1109
Tpwv
Tovr
Tpwh, Tpws
Tpwr
123
1043
2067
1044
2068
: S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
4..1042
4..2066
12
D19D2D1 D20
D3..D10, S1..S2048, D11..D18
RG
OS
S1..S1024
: S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
KMPDC0242EB
6
CCD area image sensor S10140/S10141 series
7
Area scanning
Integration period
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
Readout period (Shutter must be closed)
Enlarged view
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D10, S1..S2048, D11..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123
S1..S1024 : S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
4..127
4..255
4..511
128←122 + 6 (bevel): S1014*-1007/-1107
256←250 + 6 (bevel): S1014*-1008/-1108
512←506 + 6 (bevel): S1014*-1009/-1109
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG*17 Pulse width
S1014*-1007
Tpwv
1.5 2 -
s
S1014*-1008/-1107 34-
S1014*-1009/-1108 68-
S1014*-1109 12 16 -
Rise and fall time Tprv, Tpfv 20 - - ns
P1H, P2H*17
Pulse width Tpwh 1000 2000 - ns
Rise and fall time Tprh, Tpfh 10 - - ns
Duty ratio - 40 50 60 %
SG
Pulse width Tpws 1000 2000 - ns
Rise and fall time Tprs, Tpfs 10 - - ns
Duty ratio - 40 50 60 %
RG Pulse width Tpwr 100 1000 - ns
Rise and fall time Tprr, Tpfr 5 - - ns
TG – P1H Overlap time Tovr 1 2 - s
*17: The clock pulses should be overlapped at 50% of clock pulse amplitude.
KMPDC0243EB
CCD area image sensor S10140/S10141 series
8
KMPDA0208EB
Dimensional outlines (unit: mm)
S10140-1007/-1008/-1009 S10140-1107/-1108/-1109
4.4 ± 0.44
4.8 ± 0.49
2.4 ± 0.15
3.8 ± 0.44
Photosensitive surface
1st pin indication pad
3.0
(24 ×) 0.5 ± 0.05
Window 16.3*
8.2*
34.0 ± 0.34
2.54 ± 0.13
22.9 ± 0.30
22.4 ± 0.30
A
Active area
12.29
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics” graph.
S10140-1007: A=1.464
S10140-1008: A=3.000
S10140-1009: A=6.072
24 13
112
3.0
4.4 ± 0.44
2.4 ± 0.15
4.8 ± 0.49
3.8 ± 0.44
Window 28.6*
22.9 ± 0.30
22.4 ± 0.30
Active area 24.58
A
8.2*
44.0 ± 0.44
2.54 ± 0.13
1st pin indication pad
S10140-1107: A=1.464
S10140-1108: A=3.000
S10140-1109: A=6.072
(24 ×) 0.5 ± 0.05
Photosensitive surface
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics” graph.
24 13
112
KMPDA0207EB
CCD area image sensor S10140/S10141 series
S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S
Window 16.3*
8.2*
34.0 ± 0.34
50.0 ± 0.30
2.54 ± 0.13
22.9 ± 0.30
19.0
4.0
42.0
22.4 ± 0.30
A
7.3 ± 0.63
1.0
7.7 ± 0.68
6.7 ± 0.63
4.8 ± 0.15
Active area
12.29
1st pin indication pad
3.0
TE-cooler
S10141-1007S: A=1.464
S10141-1008S: A=3.000
S10141-1009S: A=6.072
(24 ×) 0.5 ± 0.05
Photosensitive surface
24 13
112
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics” graph.
(24 ×) 0.5
7.3 ± 0.63
1.0
3.0
6.7 ± 0.63
4.8 ± 0.15
7.7 ± 0.68
1st pin indication pad
A
4.0
19.0
22.4 ± 0.30
22.9 ± 0.30
44.0 ± 0.44
52.0
60.0 ± 0.30
2.54 ± 0.13
Window 28.6*
Active area 24.58
8.2*
S10141-1107S: A=1.464
S10141-1108S: A=3.000
S10141-1109S: A=6.072
TE-cooler
Photosensitive surface
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics” graph.
24 13
112
KMPDA0209EC
KMPDA0210EC
9
CCD area image sensor S10140/S10141 series
10
Speci¿ cations of built-in TE-cooler (Typ.)
Pin connections
Parameter Symbol Condition S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S Unit
Internal resistance Rint Ta=25 °C 2.5 1.2 :
Maximum current*19 Imax Tc*20=Th*21=25 °C 1.5 3.0 A
Maximum voltage Vmax Tc*20=Th*
21
=25 °C 3.8 3.6 V
Maximum heat absorption
*21 Qmax 3.4 5.1 W
Maximum temperature
of heat radiating side -7070°C
*19: If the current greater than this value À ows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule
heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable
operation, the supply current should be less than 60 % of this maximum current.
*20: Temperature of the cooling side of thermoelectric cooler.
*21: Temperature of the heat radiating side of thermoelectric cooler.
*22: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum
current is supplied to the unit.
Pin
No.
S10140 series S10141 series Remark
(standard operation)
Symbol Function Symbol Function
1 RD Reset drain RD Reset drain +12 V
2 OS Output transistor source OS Output transistor source
RL=100 k:
3 OD Output transistor drain OD Output transistor drain +24 V
4 OG Output gate OG Output gate +3 V
5 SG Summing gate SG Summing gate Same pulse as P2H
6- -
7- -
8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2
9 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1
10 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) -8 V
11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) -8 V
12 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD
13 TG*18 Transfer gate TG*18 Transfer gate Same pulse as P2V
14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2
15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1
16 - Th1 Thermistor
17 - Th2 Thermistor
18 - P- TE-cooler-
19 - P+ TE-cooler+
20 SS Substrate (GND) SS Substrate (GND) GND
21 ISV Test point (vertical input source) ISV Test point (vertical input source) Connect to RD
22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) -8 V
23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) -8 V
24 RG Reset gate RG Reset gate
*18: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.
CCD area image sensor S10140/S10141 series
11
KMPDB0111EB
S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S
0
1
2
3
Voltage (V)
CCD temperature (°C)
4
7
6
5
-40
-30
2.01.51.0
Current (A)
0.50
-20
-10
0
10
20
30
(Typ. Ta=25 °C)
Voltage vs. Current
CCD temperature vs. Current
0
1
2
3
Voltage (V)
CCD temperature (°C)
4
7
6
5
-40
-30
432
Current (A)
10
-20
-10
0
10
20
30
(Typ. Ta=25 °C)
Voltage vs. Current
CCD temperature vs. Current
10 kΩ
220 240 260
Temperature (K)
Resistance
280 300
100 kΩ
1 MΩ
Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the
thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: resistance at absolute temperature T1 [K]
RT2: Resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
The characteristics of the thermistor used are as follows.
R298=10 k:
B298/323=3450 K
KMPDB0178EA KMPDB0179EA
CCD area image sensor S10140/S10141 series
Precaution for use (Electrostatic countermeasures)
Element cooling/heating temperature incline rate
O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in
order to prevent electrostatic damage due to electrical charges from friction.
O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
O Provide ground lines or ground connection with the work-À oor, work-desk and work-bench to allow static electricity to discharge.
O Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage
that occurs.
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change)
for cooling or allowing the CCD to warm back is less than 5 K/minute.
12
Multichannel detector heads C10150, C10151
Features
Designed for back-thinned CCD area image sensor
C10150: for non-cooled type (S10140 series)
C10151: for TE-cooled type (S10141 series)
Line binning operation/area scanning operation
Driver/amplifier circuit for low noise CCD operation
Highly stable temperature controller (C10151)
Cooling temperature: -10 ± 0.05 °C
Simple signal input operation
Compact configuration
Multichannel detector head controller C7557-01
Features
For control of multichannel detector head and data
acquisition
Easy control and data acquisition using supplied
software via USB interface
www.hamamatsu.com
Information described in this material is current as of January, 2011. Product specifications are subject to change without prior notice due to improvements or other
reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix
"(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year
period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
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North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
CCD area image sensor S10140/S10141 series
Cat. No. KMPD1094E07 Jan. 2011 DN
Connection example
AC cable (100 to 240 V;
included with the C7557-01
)
PC (Windows 2000/XP/Vista)
C7557-01
USB cable
(Included with
the C7557-01)
Image sensor
+
Multichannel
detector head
(USB 2.0)
Shutter *
timing pulse
Dedicated cable
(Included with the C7557-01)
* Shutter, etc. are not available.
TE CONTROL I/O
SIGNAL I/O
POWER
Trig.
KACCC0402EA
13
