AP20T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic G BVDSS 30V RDS(ON) 50m ID 12.5A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current 12.5 A ID@TC=100 Continuous Drain Current 8 A 40 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 12.5 W Linear Derating Factor 0.1 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 10 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data & specifications subject to change without notice 200107041 AP20T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 50 m VGS=4.5V, ID=5A - - 80 m VDS=VGS, ID=250uA 1 - 3 V VDS=5V, ID=5A - 6 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=10A - 4 7 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=10A - 30 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 10 - ns tf Fall Time RD=1.5 - 3 - ns Ciss Input Capacitance VGS=0V - 270 430 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20T03GH/J 20 18 o T C =25 C ID , Drain Current (A) 16 14 TC=150oC 16 10V 7.0V 5.0V 4.5V 10V 7.0V 5.0V 14 ID , Drain Current (A) 18 12 10 8 6 12 4.5V 10 8 6 4 4 V G =3.0V V G =3.0V 2 2 0 0 0.0 0.5 1.0 1.5 2.0 0 2.5 1 1 2 2 3 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 ID=5A T C =25 o C I D =8A V G =10V 1.5 Normalized R DS(ON) RDS(ON)(m ) 65 55 45 1.3 1.0 0.8 0.5 35 3 5 7 9 -50 11 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 10 8 2.0 Is (A) T j =150 o C VGS(th) (V) 6 T j =25 o C 4 1.5 2 0 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP20T03GH/J f=1.0MHz 14 1000 I D = 10 A V DS =15V V DS =20V V DS =24V 10 Ciss 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 100 Coss Crss 4 2 0 10 0 3 6 9 12 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us 10 ID (A) 9 V DS ,Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC 1 0.1 o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.01 0.1 1 10 100 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q