©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
File Number
2282.6
IRF9540, RF1S9540SM
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
field effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Features
• 19A, 100V
•r
DS(ON)
= 0.200
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF9540 TO-220AB IRF9540
RF1S9540SM TO-263AB RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet July 1999
T
itle
F95
1S9
0
SM
b-
t
(-
A
, -
0
V,
0
0
m
,
a
n-
w
er
O
S-
T
s)
u
tho
e
y-
r
ds
t
er-
r
po-
on,
a
n-
w
er
O
S-
T
s,
-
0
AB
O
-
3
AB
e
-
r
()
©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9540,
RF1S9540SM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100 V
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-19
-12
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
-76 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150 W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
960 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= -250
µ
A, V
GS
= 0V (Figure 10) -100 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= -250
µ
A -2 - -4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - -25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C - - -250
µ
A
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V -19 - - A
Gate to Source Leakage Current I
GSS
V
GS
=
±
20V - -
±
100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= -10A, V
GS
= -10V (Figures 8, 9) - 0.150 0.200
Ω
Forward Transconductance (Note 2) gfs V
DS
> I
D(ON)
x r
DS(ON)
MAX
, I
D
= -6A
(Figure 12)
57-S
Turn-On Delay Time t
d(ON)
V
DD
= -50V, I
D
≈
19A, R
G
= 9.1
Ω,
R
L
=
2.3
Ω,
V
GS
= -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1620ns
Rise Time t
r
- 65 100 ns
Turn-Off Delay Time t
d(OFF)
-4770ns
Fall Time t
f
-2870ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -19A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-7090nC
Gate to Source Charge Q
gs
-14-nC
Gate to Drain “Miller” Charge Q
gd
-56-nC
Input Capacitance C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-1100- pF
Output Capacitance C
OSS
- 550 - pF
Reverse Transfer Capacitance C
RSS
- 250 - pF
Internal Drain Inductance L
D
Measured From the
Contact Screw on Tab to
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die
- 4.5 - nH
Internal Source Inductance L
S
Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case R
θ
JC
--1
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
Typical Socket Mount - - 62.5
o
C/W
LS
LD
G
D
S
IRF9540, RF1S9540SM
©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET Symbol
Showing the Integral Re-
verse
P-N Junction Diode
---19A
Pulse Source to Drain Current
(Note 3)
I
SDM
---76A
Source to Drain Diode Voltage (Note 2) V
SD
T
C
= 25
o
C, I
SD
= -19A, V
GS
= 0V (Figure 13) - - -1.5 V
Reverse Recovery Time t
rr
T
J
= 150
o
C, I
SD
= 19A, dI
SD
/dt = 100A/
µ
s - 170 - ns
Reverse Recovery Charge Q
RR
T
J
= 150
o
C, I
SD = 19A, dISD/dt = 100A/µs - 0.8 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25Ω, peak IAS = 19A. (Figures 15, 16).
G
D
S
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 175
0
POWER DISSIPATION MULTIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-5
0
25 75 125
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-15
175
-10
-20
-20
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)
10-3 10-2
1
10-5 10-4
0.01
0.1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
PDM
10
10-1 1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC + TC
t1
t2
IRF9540, RF1S9540SM
©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
ID, DRAIN CURRENT (A)
100
100
1
101
0.1
10µs
100µs
1ms
10ms
100ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
BY rDS(ON)
AREA IS LIMITED
OPERATION IN THIS
500
200
ID, DRAIN CURRENT (A)
0 -10 -20 -30 -40
-20
-40
-60
-80
-100
-50
VGS = -16V
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = -14V
VGS = -7V
VGS = -6V
VGS = -8V
VGS = -12V
VGS = -10V
VGS = -9V
VGS = -4V
VGS = -5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
0-2-4-6-8
-10
-20
-30
-40
-50
-10
VGS = -16V
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = -14V
VGS = -12V
VGS = -7V
VGS = -6V
VGS = -8V
VGS = -10V
VGS = -9V
VGS = -5V
VGS = -4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0-4 -6 -8 -10-2
-0.1
-1
-10
IDS(ON), DRAIN TO SOURCE CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
-100
TJ = 25oC
TJ = -55oC
TJ = 125oC
-12 -14
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
rDS(ON), DRAIN TO SOURCE ON
0.26
0.22
0.18
0.14
0.10
0 -20 -40 -60 -80 -100
VGS = -20V
VGS = -10V
RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
2.0
1.5
1.0
0.5
0.2
NORMALIZED DRAIN TO SOURCE
VGS = -10V, ID = 10A
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
IRF9540, RF1S9540SM
©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
1.15
1.05
0.95
0.85
0.75
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
2000
400
0
0-20 -50
C, CAPACITANCE (pF)
1200
VDS, DRAIN TO SOURCE VOLTAGE (V)
1600
800
-10 -30 -40
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
CISS
COSS
CRSS
9
6
3
0
-20 -40
ID, DRAIN CURRENT (A)
0
15
12
-60 -80 -100
gfs, TRANSCONDUCTANCE (S)
TJ = 125oC
TJ = 25oC
TJ = -55oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.4 1.0 1.2 1.6 1.80.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
0.8 1.4
0.1
1
10
ISD, SOURCE TO DRAIN CURRENT (A)
100
TJ = 25oC
TJ = 150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Qg(TOT), GATE CHARGE (nC)
VGS, GATE TO SOURCE (V)
020406080
-10
- 5
0
VDS = -20V
VDS = -50V
VDS = -80V
ID = -19A
IRF9540, RF1S9540SM
©2001 Fairchild Semiconductor Corporation IRF9540, RF1S9540SM Rev. A
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-
VDD
td(ON)
tr
90%
10%
VDS 90%
tf
td(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
0
0
0.3µF
12V
BATTERY 50kΩ
+VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
-VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
0
Ig(REF)
IRF9540, RF1S9540SM
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Star* Power™
Stealth™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™