Sprague-Goodman ENGINEERING BULLETIN SG-950 VARACTOR DIODES Sprague-Goodman Electronics, Inc. 1700 SHAMES DRIVE, WESTBURY, NY 11590 TEL: 516-334-8700 * FAX: 516-334-8771 E-MAIL: info@spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES * Mesa epitaxial silicon construction * Low voltage wireless phase locked loop VCOs * Silicon dioxide passivated * Phase shifters * Superior mid range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 12 V min * High Q Maximum reverse leakage current at -10 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * TCXOs, VCXOs Operating junction temperature: -55C to +125C * Low voltage wireless open loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -2 V min max 46 100 Total Capacitance C T (pF) at -7 V typ 68 150 3 Total Capacitance C T (pF) at -10 V min max 6.1 13.0 TOP VIEW 4.2 8.6 3 5.2 10.6 Model Number Q min at -2 V (10 MHz) Single Common Cathode 75 50 GVD1401-001 GVD1404-001 GVD1401-004 -- 500 0.031 TYP 0.80 0.035 TYP 0.90 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 100 0.038 0.003 0.96 0.065 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 0.037 0.95 50 CT (pF) 0.037 0.95 PAD LAYOUT 0.021 0.003 0.53 0.08 0.016 0.002 0.41 0.04 TYP 0.075 0.005 1.91 0.13 0.007 0.003 0.18 0.08 GVD1404-001 GVD1401-001 0.040 0.007 1.03 0.18 10 0.0047 0.0013 0.12 0.033 TYP 5 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 2 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES * Mesa epitaxial silicon construction * Low voltage wireless phase locked loop VCOs * Silicon dioxide passivated * Phase shifters * Superior mid range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 12 V min * High Q Maximum reverse leakage current at -10 V (at 25C): 0.05 A DC * Available in common cathode Style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * TCXOs, VCXOs Operating junction temperature: -55C to +125C * Low voltage wireless open loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -1 V min max Capacitance Ratio Capacitance Ratio C T at -1 V C T at -3 V min max C T at -1 V C T at -6 V min max 3.00 5.85 10.35 15.50 45.00 1.4 1.6 1.6 1.6 1.6 3.60 7.15 12.65 18.50 54.00 3 TOP VIEW 1.9 2.0 2.0 2.0 2.0 3 2.6 2.8 2.9 3.0 3.0 3.3 3.4 3.4 3.5 3.5 0.031 TYP 0.80 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 0.051 0.004 1.3 0.1 0.037 0.95 0.075 0.005 1.91 0.13 Common Cathode 1500 1200 1000 900 750 GVD20433-001 GVD20434-001 GVD20435-001 GVD20436-001 GVD20437-001 GVD20433-004 GVD20434-004 GVD20435-004 GVD20436-004 GVD20437-004 50.0 10.0 5.0 0.037 0.95 GVD20436-001 3.0 PAD LAYOUT 0.021 0.003 0.53 0.08 Single CT (pF) 0.038 0.003 0.96 0.065 0.091 0.008 2.3 0.2 Q min at -4 V (50 MHz) 100.0 0.035 TYP 0.90 1 2 (SINGLE) Model Number GVD20435-001 2.0 GVD20434-001 0.040 0.007 1.03 0.18 1.0 0.5 0.016 0.002 0.41 0.04 TYP 0.3 0.007 0.003 0.18 0.08 0.0047 0.0013 0.12 0.033 TYP 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com 3 VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES * Mesa epitaxial silicon construction * Low voltage wireless phase locked loop VCOs * Silicon dioxide passivated * Phase shifters * Superior mid range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 12 V min * High Q Maximum reverse leakage current at -10 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * TCXOs, VCXOs Operating junction temperature: -55C to +125C * Low voltage wireless open loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -1 V min Total Capacitance C T (pF) at -2.5 V min max 13.0 13.0 17.0 17.0 26.0 26.0 36.0 36.0 6.5 6.5 8.5 8.5 13.0 13.0 18.0 18.0 Total Capacitance C T (pF) at -1 V min 9.0 3 Q min at -4 V (50 MHz) Single Common Cathode 2.7 2.7 3.2 3.2 4.7 4.7 6.2 6.2 750 350 600 300 500 225 400 150 GVD20442-001 GVD20443-001 GVD20444-001 GVD20445-001 GVD20446-001 GVD20447-001 GVD20448-001 GVD20449-001 GVD20442-004 GVD20443-004 GVD20444-004 GVD20445-004 GVD20446-004 GVD20447-004 GVD20448-004 GVD20449-004 Total Capacitance C T (pF) at -4 V max Q min at -4 V (50 MHz) Single Common Cathode 3.0 400 GVD20450-001 GVD20450-004 10.0 10.0 13.0 13.0 20.0 20.0 27.0 27.0 Total Capacitance C T (pF) at -2.5 V min max 4.5 TOP VIEW Total Capacitance C T (pF) at -8 V max 6.5 3 Model Number Model Number 50.0 0.031 TYP 0.80 0.035 TYP 0.90 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 10.0 0.038 0.003 0.96 0.065 0.037 0.95 CT (pF) 5.0 GVD20448-001 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 0.037 0.95 3.0 GVD20446-001 2.0 GVD20444-001 1.0 GVD20450-001 PAD LAYOUT 0.021 0.003 0.53 0.08 0.075 0.005 1.91 0.13 0.040 0.007 1.03 0.18 0.5 0.016 0.002 0.41 0.04 TYP 0.3 0.007 0.003 0.18 0.08 0.0047 0.0013 0.12 0.033 TYP 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 4 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES APPLICATIONS * Mesa epitaxial silicon construction * PCS * WANS * DECT * Silicon dioxide passivated * GSM * TAGS * AMPS * Fits footprint for SOD-323, SOD-123 and smaller * Cellular * High frequency (VHF to 8 GHz) SPECIFICATIONS * Available on carrier and reel * Available in chip form (add suffix -000) Reverse breakdown voltage at 10 A DC (at 25C): 12 V min * Two package styles including lower cost, flat top version Maximum reverse leakage current at -10 V (at 25C): 0.05 A DC * Alternate notched termination version available, contact factory for outline drawing Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) Operating junction temperature: -65C to +125C Storage temperature: -65C to +125C Total Capacitance C T (pF) at -1 V min 36.0 26.0 17.0 13.0 9.0 4.0 1.8 1.2 0.6 Total Capacitance C T (pF) at -2.5 V min max 18.0 27.0 13.0 20.0 8.5 13.0 6.5 10.0 4.5 6.5 2.0 3.0 1.1 1.5 0.8 1.1 0.5 0.8 Total Capacitance C T (pF) at -4 V max 12.0 9.0 6.0 4.5 3.0 1.5 0.8 0.6 0.4 Total Capacitance C T (pF) at -8 V max 6.2 4.7 3.2 2.7 1.7 1.0 0.55 0.45 0.35 Q min at -4 V (50 MHz) 400 500 600 750 900 1200 1400 1600 1800 Model Number* GVD90001 - _ GVD90002 - _ GVD90003 - _ GVD90004 - _ GVD90005 - _ GVD90006 - _ GVD90007 - _ GVD90008 - _ GVD90009 - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select "Dash No." from chart below. TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END D TYP TOP VIEW EPOXY ENCAPSULANT K TYP A - 011 0.10 - 111 2.5 - 012 0.12 - 112 3.0 B C1 C2 D K L M B A BOTTOM VIEW Dash No. 0.050 0.035 0.050 1.3 0.89 1.3 0.060 0.035 0.050 1.5 0.89 1.3 0.015 0.004 0.38 0.1 0.020 0.005 0.51 0.1 0.030 0.070 0.112 0.76 1.8 2.84 0.030 0.080 0.132 0.76 2.0 3.35 C1 L - 013 0.200 0.100 0.035 0.050 - 113 5.08 - 014 0.075 0.050 0.035 0.050 2.54 0.89 1.3 0.020 0.005 0.51 0.1 0.030 0.120 0.212 0.76 3.05 5.38 SIDE VIEW FOR - 01__ M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 SIDE VIEW FOR - 11__ - 115 1.9 1.3 0.89 1.3 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.015 0.004 0.38 0.1 0.011 0.003 0.28 0.08 0.030 0.070 0.087 0.76 1.8 2.2 0.020 0.060 0.072 0.51 1.5 1.8 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com 5 VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES Microwave Hyperabrupt Series FEATURES * Mesa epitaxial silicon construction * High linearity VCOs * Silicon dioxide passivated * Phase shifters * Superior wide range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 20 V min * High Q Maximum reverse leakage current at -20 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * Low phase noise VCOs Operating junction temperature: -55C to +125C * Phase locked loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -0 V min 2.7 4.2 6.3 11.9 26.0 3 TOP VIEW Total Capacitance C T (pF) at -4 V min max Total Capacitance C T (pF) at -20 V min max 1.25 1.70 2.20 3.70 9.00 0.43 0.52 0.68 0.94 1.90 1.75 2.50 3.80 5.50 11.00 3 0.57 0.72 0.96 1.30 2.50 0.031 TYP 0.80 Model Number Q min at -4 V (50 MHz) Single 1000 850 700 600 400 GVD30422-001 GVD30432-001 GVD30442-001 GVD30452-001 GVD30462-001 Common Cathode GVD30422-004 GVD30432-004 GVD30442-004 GVD30452-004 GVD30462-004 50.0 0.035 TYP 0.90 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 10.0 0.038 0.003 0.96 0.065 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 0.037 0.95 0.037 0.95 CT (pF) GVD30432-001 5.0 GVD30452-001 3.0 2.0 PAD LAYOUT 0.021 0.003 0.53 0.08 0.075 0.005 1.91 0.13 GVD30422-001 1.0 0.040 0.007 1.03 0.18 0.5 0.016 0.002 0.41 0.04 TYP 0.3 0.007 0.003 0.18 0.08 0.0047 0.0013 0.12 0.033 TYP 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 6 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES VHF/UHF Hyperabrupt Series FEATURES * Mesa epitaxial silicon construction * High linearity VCOs * Silicon dioxide passivated * Phase shifters * Superior wide range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 25 V min * High Q Maximum reverse leakage current at -20 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * Low phase noise VCOs Operating junction temperature: -55C to +125C * Phase locked loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -3 V min max Total Capacitance C T (pF) at -25 V min max 9.5 9.5 26.0 26.0 1.8 1.8 4.3 4.3 14.5 14.5 32.0 32.0 3 TOP VIEW Single 200 750 200 500 GVD30501-001 GVD30502-001 GVD30503-001 GVD30504-001 2.8 2.8 6.0 6.0 3 Model Number Q min at -4 V (50 MHz) Common Cathode GVD30501-004 GVD30502-004 GVD30503-004 GVD30504-004 50.0 0.031 TYP 0.80 0.035 TYP 0.90 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 GVD30503-001 10.0 CT (pF) 0.038 0.003 0.96 0.065 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 0.037 0.95 0.037 0.95 5.0 3.0 GVD30502-001 2.0 PAD LAYOUT 0.021 0.003 0.53 0.08 0.075 0.005 1.91 0.13 1.0 0.040 0.007 1.03 0.18 0.5 0.016 0.002 0.41 0.04 TYP 0.3 0.007 0.003 0.18 0.08 0.0047 0.0013 0.12 0.033 TYP 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com 7 VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES VHF/UHF Hyperabrupt Series FEATURES * Mesa epitaxial silicon construction * High linearity VCOs * Silicon dioxide passivated * Phase shifters * Superior wide range linear characteristics SPECIFICATIONS * High tuning ratios Reverse breakdown voltage at 10 A DC (at 25C): 22 V min * High Q Maximum reverse leakage current at -20 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * Low phase noise VCOs Operating junction temperature: -55C to +125C * Phase locked loop VCOs Storage temperature: -55C to +125C Total Capacitance C T (pF) at -4 V min max 18.0 45.0 100.0 Total Capacitance C T (pF) at -8 V min max 22.0 55.0 120.0 3 TOP VIEW 7.5 18.0 39.0 Total Capacitance C T (pF) at -20 V min max 10.5 25.0 55.0 3 2.7 6.6 14.0 Model Number Q min at -4 V (50 MHz) Single Common Cathode 160 125 80 GVD30601-001 GVD30602-001 GVD30603-001 GVD30601-004 GVD30602-004 -- 3.5 9.0 19.0 500 0.031 TYP 0.80 0.035 TYP 0.90 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 100 0.079 2.0 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 GVD30602-001 50 0.038 0.003 0.96 0.065 0.037 0.95 GVD30603-001 CT (pF) 0.037 0.95 GVD30601-001 PAD LAYOUT 0.021 0.003 0.53 0.08 0.016 0.002 0.41 0.04 TYP 0.075 0.005 1.91 0.13 0.007 0.003 0.18 0.08 0.040 0.007 1.03 0.18 10 5 0.0047 0.0013 0.12 0.033 TYP 3 0.5 1 2 3 4 5 6 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 8 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES APPLICATIONS * Mesa epitaxial silicon construction * PCS * WANS * AMPS * Silicon dioxide passivated * GSM * TAGS * DECT * Fits Footprint for SOD-323, SOD-123 and smaller * Cellular * High frequency (VHF to 8 GHz) SPECIFICATIONS * Available on carrier and reel * Available in chip form (add suffix -000) Reverse breakdown voltage at 10 A DC (at 25C): 22 V min * Two package styles including lower cost, flat top version Maximum reverse leakage current at -20 V (at 25C): 0.05 A DC * Alternate notched termination version available, contact factory for outline drawing Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) Operating junction temperature: -65C to +125C Storage temperature: -65C to +125C Total Capacitance C T (pF) at 0 V typical 26.0 14.0 7.0 5.0 3.0 2.0 Total Capacitance C T (pF) at -4 V min max Total Capacitance C T (pF) at -20 V min max 8.75 4.45 2.65 1.75 1.30 0.85 1.85 0.85 0.65 0.50 0.40 0.30 10.80 5.50 3.30 2.20 1.65 1.10 Q min at -4 V (50 MHz) 2.50 1.30 0.90 0.70 0.55 0.45 Model Number* GVD92101 - _ GVD92102 - _ GVD92103 - _ GVD92104 - _ GVD92105 - _ GVD92106 - _ 400 600 700 850 1000 1200 _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select "Dash No." from chart below. TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END D TYP TOP VIEW EPOXY ENCAPSULANT K TYP A - 011 0.10 - 111 2.5 - 012 0.12 - 112 3.0 B C1 C2 D K L M B A BOTTOM VIEW Dash No. 0.050 0.035 0.050 1.3 0.89 1.3 0.060 0.035 0.050 1.5 0.89 1.3 0.015 0.004 0.38 0.1 0.020 0.005 0.51 0.1 0.030 0.070 0.112 0.76 1.8 2.84 0.030 0.080 0.132 0.76 2.0 3.35 C1 L - 013 0.200 0.100 0.035 0.050 - 113 5.08 - 014 0.075 0.050 0.035 0.050 2.54 0.89 1.3 0.020 0.005 0.51 0.1 0.030 0.120 0.212 0.76 3.05 5.38 SIDE VIEW FOR - 01__ M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 SIDE VIEW FOR - 11__ - 115 1.9 1.3 0.89 1.3 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.015 0.004 0.38 0.1 0.011 0.003 0.28 0.08 0.030 0.070 0.087 0.76 1.8 2.2 0.020 0.060 0.072 0.51 1.5 1.8 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com 9 VARACTOR DIODES SG-950 HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES * Mesa epitaxial silicon construction * Phase locked loop VCOs * Silicon dioxide passivated * Moderate bandwidth VCOs * Economy price SPECIFICATIONS * Mil grade performance Reverse breakdown voltage at 10 A DC (at 25C): 30 V min * High Q Maximum reverse leakage current at -25 V (at 25C): 0.05 A DC * Available in common cathode style * Available in chip form (add suffix -000) APPLICATIONS Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) * Low phase noise VCOs Operating junction temperature: -55C to +125C Storage temperature: -55C to +125C Total Capacitance C T (pF) at -4 V (10 %) Capacitance Ratio C T at 0 V C T at -30 V min Q min at -4 V (50 MHz) Single Common Cathode 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 3.4 3.5 3.5 3.7 3.7 3.8 3.9 3.9 4.0 4.0 4.0 4.1 4.1 4.2 4.2 4.2 3200 3000 3000 3000 2500 2500 2500 2000 2000 2000 2000 1800 1600 1250 1000 850 GVD1202-001 GVD1203-001 GVD1204-001 GVD1205-001 GVD1206-001 GVD1207-001 GVD1208-001 GVD1209-001 GVD1210-001 GVD1211-001 GVD1212-001 GVD1213-001 GVD1214-001 GVD1215-001 GVD1216-001 GVD1217-001 GVD1202-004 GVD1203-004 GVD1204-004 GVD1205-004 GVD1206-004 GVD1207-004 GVD1208-004 GVD1209-004 GVD1210-004 GVD1211-004 GVD1212-004 GVD1213-004 GVD1214-004 GVD1215-004 GVD1216-004 GVD1217-004 3 TOP VIEW 3 Model Number 20 0.031 TYP 0.80 0.035 TYP 0.90 1 2 (SINGLE) 10 1 2 (COMMON CATHODE) 0.115 0.005 2.93 0.13 0.079 2.0 GVD1213-001 5 0.038 0.003 0.96 0.065 0.051 0.004 1.3 0.1 0.091 0.008 2.3 0.2 0.037 0.95 0.037 0.95 GVD1211-001 JUNCTION 3 CAPACITANCE (pF) 2 GVD1207-001 GVD1203-001 PAD LAYOUT 0.021 0.003 0.53 0.08 0.016 0.002 0.41 0.04 TYP 0.075 0.005 1.91 0.13 GVD1209-001 1 0.040 0.007 1.03 0.18 0.5 0.007 0.003 0.18 0.08 0.0047 0.0013 0.12 0.033 TYP 1 2 3 4 5 6 10 20 30 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 10 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES APPLICATIONS * Mesa epitaxial silicon construction * PCS * WANS * AMPS * Silicon dioxide passivated * GSM * TAGS * DECT * Fits Footprint for SOD-323, SOD-123 and smaller * Cellular * High Frequency (VHF to 8 GHz) SPECIFICATIONS * Available on carrier and reel * Available in chip form (add suffix -000) Reverse breakdown voltage at 10 A DC (at 25C): 30 V min * Two package styles including lower cost, flat top version Maximum reverse leakage current at -25 V (at 25C): 0.05 A DC * Alternate notched termination version available, contact factory for outline drawing Device dissipation at 25C: 250 mW (derated linearly to zero at +125C) Operating junction temperature: -65C to +125C Storage temperature: -65C to +125C Capacitance Ratio C T at 0 V C T at -4 V min 1.5 1.6 1.7 1.8 1.9 2.0 2.0 2.1 2.1 2.2 2.2 Total Capacitance C T (pF) at -4 V (10%) 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 Capacitance Ratio C T at -4 V C T at -30 V min 1.45 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 Q min at -4 V (50 MHz) Model Number* 3900 3800 3700 3600 3500 3400 3300 3100 2700 2600 2500 GVD91300 GVD91301 GVD91302 GVD91303 GVD91304 GVD91305 GVD91306 GVD91307 GVD91308 GVD91309 GVD91310 - - - - - - - - - - - K L _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select "Dash No." from chart below. TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END D TYP TOP VIEW EPOXY ENCAPSULANT K TYP A - 011 0.10 - 111 2.5 - 012 0.12 - 112 3.0 B C1 C2 D M B A BOTTOM VIEW Dash No. 0.050 0.035 0.050 1.3 0.89 1.3 0.060 0.035 0.050 1.5 0.89 1.3 0.015 0.004 0.38 0.1 0.020 0.005 0.51 0.1 0.030 0.070 0.112 0.76 1.8 2.84 0.030 0.080 0.132 0.76 2.0 3.35 C1 L - 013 0.200 0.100 0.035 0.050 - 113 5.08 - 014 0.075 0.050 0.035 0.050 2.54 0.89 1.3 0.020 0.005 0.51 0.1 0.030 0.120 0.212 0.76 3.05 5.38 SIDE VIEW FOR - 01__ M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 SIDE VIEW FOR - 11__ - 115 1.9 1.3 0.89 1.3 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.015 0.004 0.38 0.1 0.011 0.003 0.28 0.08 0.030 0.070 0.087 0.76 1.8 2.2 0.020 0.060 0.072 0.51 1.5 1.8 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com 11 VARACTOR DIODES SG-950 MINIATURE MICROWAVE SILICON VARACTOR DIODES Surface Mount Monolithic Package (SMMP) FEATURES APPLICATIONS * Multilayer construction Microwave Voltage Controlled Oscillators (VCOs) * Low SMT profile Ideal for Wide Bandwidth Applications (VHF-10 GHz) * Low series inductance SPECIFICATIONS * Low parasitic capacitance ( 0.06 pF ) Reverse breakdown voltage at 10 A DC (at 25C): See below * High Q Maximum reverse leakage current at -10 V (at 25C): 0.05 A DC * Available on carrier and reel Operating junction temperature: -65C to +125C Storage temperature: -65C to +125C Total Capacitance C T (pF) at -1 V min max 2.6 3.8 Capacitance Ratio C T at -1 V C T at -3 V min max 1.4 2.2 Capacitance Ratio C T at -1 V C T at -6 V min max 2.6 3.6 Q min at -4 V (50 MHz) Model Number 1500 GVD60100 Q min at -4 V (50 MHz) Model Number 1000 GVD60200 Reverse breakdown voltage at 10 A DC: 15 V min Total Capacitance C T (pF) at -0 V typical 3.25 Total Capacitance C T (pF) at -4 V min max 0.9 1.5 Total Capacitance C T (pF) at -20 V max max 0.2 0.45 Reverse breakdown voltage at 10 A DC: 22 V min Models shown above supplied bulk in vials. For 300 pc gel pack, add "-03" to the model number. For 5000 pc carrier and reel, add "-50" to the model number. MARKING FOR CATHODE END 0.019 0.48 TOP VIEW 0.040 1.02 0.015 0.38 SIDE VIEW GOLD METALIZED PADS (2 PLACES) 0.020 0.51 BOTTOM VIEW 0.011 0.28 0.016 0.41 0.012 0.30 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1. 12 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 * TEL: 516-334-8700 * FAX: 516-334-8771 * E-MAIL: info@ spraguegoodman.com (c) 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED. PRINTED IN THE U.S.A. 50104