BAS40-06LT1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2003

January, 2003 - Rev. 4 1Publication Order Number:

BAS40-06LT1/D

BAS40−06LT1

Preferred Device

Common Anode Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed

switching applications, circuit protection, and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature

surface mount package is excellent for hand held and portable

applications where space is limited.

•Extremely Fast Switching Speed

•Low Forward Voltage

MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR40 V

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF225

1.8 mW

mW/°C

Operating Junction and Storage

Temperature Range TJ, Tstg -55 to

+150 °C

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

Reverse Breakdown Voltage

(IR = 10 A) V(BR)R 40 - V

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT- 5.0 pF

Reverse Leakage

(VR = 25 V) IR- 1.0 Adc

Forward Voltage

(IF = 1.0 mAdc) VF- 380 mVdc

Forward Voltage

(IF = 10 mAdc) VF- 500 mVdc

Forward Voltage

(IF = 40 mAdc) VF- 1.0 Vdc

40 VOLTS

SCHOTTKY BARRIER DIODE

Device Package Shipping

ORDERING INFORMATION

BAS40-06LT1 SOT-23 3000 / Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

ANODE

CATHODE

http://onsemi.com

SOT-23 (TO-236AB)

CASE 318

Style 12

MARKING

DIAGRAM

L2 D

L2 = Specific Device Code

D = Date Code

BAS40-06LT1

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100

0 0.1

VF, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

5.0 10 15 20 25

3.5

VR, REVERSE VOLTAGE (VOLTS)

3.0

1.0

0.5

CT, CAPACITANCE (pF)

5.0 10 15 40

IF, FORWARD CURRENT (mA)

Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse

Voltage

Figure 3. Typical Capacitance

−40°C

25°C

TA = 150°C

25°C

IR, REVERSE CURRENT (µA)

0.8

−55°C

125°C

150°C

100

2520

1.5

2.0

2.5

0.6 0.7

125°C

85°C

30 35

BAS40-06LT1

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The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device

which in this case is 225 milliwatts.

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT-23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

PD = TJ(max) - TA

RJA

PD = 150°C - 25°C

556°C/W = 225 milliwatts

The power dissipation of the SOT-23 is a function of the

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

mined by TJ(max), the maximum rated junction tempera-

ture of the die, RJA, the thermal resistance from the

device junction to ambient, and the operating tempera-

ture, TA. Using the values provided on the data sheet for

the SOT-23 package, PD can be calculated as follows:

The 5 5 6 °C/W for the SOT-23 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 225 milli-

watts. There are other alternatives to achieving higher

power dissipation from the SOT-23 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the

same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the

rated temperature of the device. When the entire device

is heated to a high temperature, failure to complete

soldering within a short time could result in device

failure. Therefore, the following items should always be

observed in order to minimize the thermal stress to which

the devices are subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of

the leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet.

When using infrared heating with the reflow

soldering method, the difference shall be a maximum

of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

•After soldering has been completed, the device

should be allowed to cool naturally for at least three

minutes. Gradual cooling should be used as the use

of forced cooling will increase the temperature

gradient and result in latent failure due to mechanical

stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces-

BAS40-06LT1

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PACKAGE DIMENSIONS

SOT-23 (TO-236AB)

PLASTIC PACKAGE

CASE 318-08

ISSUE AH

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0385 0.0498 0.99 1.26

D0.0140 0.0200 0.36 0.50

G0.0670 0.0826 1.70 2.10

H0.0040 0.0098 0.10 0.25

J0.0034 0.0070 0.085 0.177

K0.0180 0.0236 0.45 0.60

L0.0350 0.0401 0.89 1.02

S0.0830 0.0984 2.10 2.50

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01, −02, AND −06 OBSOLETE, NEW

STANDARD 318−09.

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: 81-3-5773-3850

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BAS40-06LT1/D

Thermal Clad is a trademark of the Bergquist Company.

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