TPCF8201 - Toshiba - Datasheet.Live

TPCF8201

2009-09-29

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8201

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 5.4 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)

• Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 20 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V

Gate-source voltage VGSS ±12 V

DC (Note 1) ID 3

Drain current

Pulse (Note 1) IDP 12

Single-device operation

(Note 3a)

PD (1) 1.35

Drain power

dissipation

(t = 5 s) (Note 2a) Single-device value at

dual operation (Note 3b) PD (2) 1.12

Single-device operation

(Note 3a)

PD (1) 0.53

Drain power

dissipation

(t = 5 s) (Note 2b) Single-device value at

dual operation (Note 3b) PD (2) 0.33

Single pulse avalanche energy (Note 4) EAS 1.46 mJ

Avalanche current IAR 1.5 A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR 0.11 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with caution.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

1 2 3 4

8 7 6 5

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Thermal Characteristics

Characteristics Symbol Max Unit

Single-device operation

(Note 3a) Rth (ch-a) (1) 92.6

Thermal resistance,

channel to ambient

(t = 5 s) (Note 2a) Single-device value at

dual operation (Note 3b) Rth (ch-a) (2) 111.6

°C/W

Single-device operation

(Note 3a) Rth (ch-a) (1) 235.8

Thermal resistance,

channel to ambient

(t = 5 s) (Note 2b) Single-device value at

dual operation (Note 3b) Rth (ch-a) (2) 378.8

°C/W

Marking (Note 6)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

Note 3: a) he power dissipation and thermal resistance values are shown for a single device.

(During single-device operation, power is only applied to one device.)

b) he power dissipation and thermal resistance values are shown for a single device.

(During dual operation, power is evenly applied to both devices.)

Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 1.5 A

Note 5: Repetitive rating: Pulse width limited by maximum channel temperature

Note 6: “●” on the lower left of the marking indicates Pin 1.

Note 7 A dot marking identifies the indication of product Labels.

Without a dot: [[Pb]]/INCLUDES > MCV

With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

25.4

Part No.

(or abbreviation code) F4A

Note 7

Lot code (month) Lot No.

Pin #1 Lot code

(year)

Product-specific code

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TPCF8201

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain cut-off current IDSS V

DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA

V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯

Drain-source breakdown voltage

V (BR) DSX ID = 10 mA, VGS = -12 V 8 ⎯ ⎯

Gate threshold voltage Vth V

DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V

RDS (ON) V

GS = 2.0 V, ID = 1.5 A ⎯ 62 100

RDS (ON) V

GS = 2.5 V, ID = 1.5 A ⎯ 50 66

Drain-source ON resistance

RDS (ON) V

GS = 4.5 V, ID = 1.5 A ⎯ 38 49

mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.5 A 2.7 5.4 ⎯ S

Input capacitance Ciss ⎯ 590 ⎯

Reverse transfer capacitance Crss ⎯ 70 ⎯

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯ 85 ⎯

Rise time tr ⎯ 3.0 ⎯

Turn-on time ton ⎯ 7.5 ⎯

Fall time tf ⎯ 4.4 ⎯

Switching time

Turn-off time toff

Duty ≤ 1%, tw = 10 μs ⎯ 26 ⎯

Total gate charge

(gate-source plus gate-drain) Qg ⎯ 7.5 ⎯

Gate-source charge1 Qgs1 ⎯ 1.3 ⎯

Gate-drain (“miller”) charge Qgd

VDD

∼

−

16 V, VGS = 5 V, ID = 3.0 A

⎯ 2.1 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 12 A

Forward voltage (diode) VDSF IDR = 3.0 A, VGS = 0 V ⎯ ⎯ -1.2 V

RL = 0.67Ω

VDD

∼

−

10 V

0 V

VGS

5 V

4.7 Ω

ID = 1.5 A

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2009-09-29

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (A)

Drain-source voltage VDS (V)

Drain current ID (A)

ID – VDS

0 0.2

1.7

0.4 0.6 0.8

VGS = 1.4 V

1.5

1.6

1.8

5 1.9

10 Common source

Ta = 25°C

Pulse test

0 3 4 5

VGS = 1.4V

1.5

1.6

1.7

2.1

10 3

1.9

1.8

Common source

Ta = 25°C

Pulse test

ID – VGS

Gate-source voltage VGS (V)

Drain current ID (A)

0 1 2 3 4 5

Ta = −55°C

100

Common source

VDS = 10 V

Pulse test

Drain-source voltage VDS (V)

VDS – VGS

Gate-source voltage VGS (V)

0.4

0.6

0.8

ID = 3 A

2 4 6 8 10

0.75

1.5

0.2

Common source

Ta = 25℃

Pulse test

Forward transfer admittance

⎪Yfs⎪ (S)

Drain current ID (A)

⎪Yfs⎪ – ID

100

0.1 1 10

100

Ta = −55°C

Common source

VDS = 10 V

Pulse test

Drain-source ON resistance

RDS (ON) (mΩ)

Drain current ID (A)

RDS (ON) – ID

0.1 1 10

100

1000

VGS = 4.5V

2.0

2.5

Common source

Ta = 25°C

Pulse test

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Drain-source ON resistance

RDS (ON) (m Ω)

Ambient temperature Ta (°C)

RDS (ON) – Ta

160 −40 0 40 80 120 −80

120

100

ID = 3A,1.5A,0.75A

VGS = 2.0 V

VGS = 4.5 V

ID = 3A,1.5A,0.75A

VGS = 2.5 V

ID = 1.5A,0.75A

ID = 3A

Common source

Pulse test

IDR – VDS

Drain reverse current IDR (A)

Drain-source voltage VDS (V)

0.1 −0.4

0.3

0.5

−0.8 −1.2

VGS = 0 V

2.5

2.0

Common source

Ta = 25°C

Pulse test

Capacitance – VDS

Capacitance C (pF)

Drain-source voltage VDS (V)

0.1

100

1000

1 3 5 10 30 50 100

Ciss

Coss

Crss

Common source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Vth – Ta

Gate threshold voltage

Vth (V)

Ambient temperature Ta (°C)

0.4

0.6

0.8

1.2

−80 −40 0 40 80 120 160

0.2

Common source

VDS = 10 V

ID = 200μA

Pulse test

PD – Ta

Drain power dissipation

PD (W)

Ambient temperature Ta (°C)

0 40 80 120 160

0.4

0.8

1.2

1.6

(4)

(1)

(3)

(2)

t = 5 s Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

Drain-source voltage VDS (V)

Total gate charge Qg (nC)

Gate-source voltage VGS (V)

Dynamic input / output

characteristics

0 8

VDD = 16 V

VDS 4

2 4 6

VGS

Common source

ID = 3 A

Ta = 25°C

Pulse test

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Safe operating Area

Drain-source voltage VDS (V)

Drain current ID (A)

0.1

0.1 1 10 100

100

10 ms*

ID max (pulse)*

VDSS max

1 ms*

*: Single pulse

Ta= 25 ℃

Curves must be derated linearly with

increase in temperature.

rth – tw

Pulse width tw (s)

Transient thermal impedance

rth (°C/W)

1 m 10 m 100 m 1 10 100 1000

100

1000

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

(4)

(1)

(2)

(3)

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TPCF8201

2009-09-29

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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