1
MRF581 MRF5812R1, R2MOTOROLA RF DEVICE DATA
The RF Line
 
 ! 
Designed for high current low power amplifiers up to 1.0 GHz.
•Low Noise (2.0 dB @ 500 MHz)
•Low Intermodulation Distortion
•High Gain
•State–of–the–Art Technology
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin–Film Ballasting Resistors
•Excellent Dynamic Range
•Fully Characterized
•High Current–Gain Bandwidth Product
•MRF5812 available in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating Symbol MRF581 MRF5812 Unit
Collector–Emitter Voltage VCEO 18 15 Vdc
Collector–Base Voltage VCBO 36 30 Vdc
Emitter–Base Voltage VEBO 2.5 Vdc
Collector Current — Continuous IC200 mAdc
Thermal Resistance θJC (1) MRF581 RθJC 40 °C/W
Thermal Resistance θJC (1) MRF5812 RθJC 45 °C/W
Total Device Dissipation @ TC = 75°C (1)
Derate above TC = 75°C MRF581 PD1.88
25 Watts
mW/°C
Total Device Dissipation @ TC = 75°C (1)
Derate above TC = 75°C MRF5812 PD1.67
22.2 Watts
mW/°C
Storage Junction Temperature Range Tstg – 55 to +150 °C
Maximum Junction Temperature TJmax 150 °C
DEVICE MARKING
MRF5812 = 5812
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF581/D

SEMICONDUCTOR TECHNICAL DATA


IC = 200 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
NPN SILICON
CASE 317–01, STYLE 2
MRF581
CASE 751–06, STYLE 1
SORF (SO–8)
MRF5812
Motorola, Inc. 1998
REV 9
MRF581 MRF5812R1, R2
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MRF581
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 18
15 —
——
—Vdc
Collector–Emitter Breakdown Voltage MRF5812
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 15 — — Vdc
Collector–Emitter Breakdown Voltage MRF5812
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 30 — — Vdc
Collector–Base Breakdown Voltage MRF581
(IC = 1.0 mAdc, IE = 0) V(BR)CBO 36
30 —
——
—Vdc
Emitter–Base Breakdown Voltage MRF581
(IE = 0.1 mAdc, IC = 0) MRF5812 V(BR)EBO 2.5 — — Vdc
Emitter Cutoff Current MRF581
(VEB = 2.0 Vdc, VBE = 0) IEBO — — 100 µAdc
Collector Cutoff Current MRF581
(VCB = 15 Vdc, IE = 0) ICBO — — 100 µAdc
Collector Cutoff Current MRF5812
(VCB = 15 Vdc, VBE = 0, TC = 25°C) ICBO — — 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain (1) MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc) hFE 50 — 200 —
DC Current Gain (1) MRF5812
(IC = 50 mAdc, VCE = 5.0 Vdc) hFE 30 90 200 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance MRF581
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob —1.4 2.0 pF
Collector–Base Capacitance MRF5812
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb —1.2 2.0 pF
Current–Gain Bandwidth Product MRF581
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) fT— 5.0 — GHz
Current–Gain — Bandwidth Product MRF5812
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) fT— 5.5 — GHz
FUNCTIONAL TESTS
Noise Figure (Minimum) (Figure 11) MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) NFmin —2.0 3.0 dB
Noise Figure (Minimum) (Figure 11) MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) NFmin —2.0 — dB
Noise Figure (50 Ohm Insertion) MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) NF50 Ω—2.5 3.0 dB
Power Gain at Optimum Noise Figure MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) GNF 13 15.5 — dB
Insertion Gain MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) |S21|213 15.5 — dB
Maximum Unilateral Gain
(IC = 75 mAdc, VCE = 10 Vdc, f = 0.5 GHz) GUmax(2) — 17 — dB
Intermodulation Distortion (3)
(VCE = 10 V, IC = 75 mA, Vout = +50 dBmV) IMD(d3) — –65 — dB
NOTE:
1. 300 µs pulse on Tektronix 576 or equivalent.
2. GUmax =
3. 2 Tones, f1 = 497 MHz, f2 = 503 MHz, 3rd Order Single Tone reference.
|S21|2
(1
–
|S11|2)(1
–
|S22|2)
3
MRF581 MRF5812R1, R2MOTOROLA RF DEVICE DATA
Figure 1. Cib Input Capacitance versus Voltage Figure 2. Ccb, Cob Collector–Base Capacitance
versus Voltage
3210 VEB, EMITTER–BASE VOLTAGE (VOLTS)
f = 1 MHz
C, CAPACITANCE (pF)
10
8
6
4
2
0
Cib
20 Vcb, COLLECTOR–BASE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
5
4
2
0
3
1
46810
C
ob
Ccb
f = 1 MHz
Figure 3. Gain–Bandwidth Product versus
Collector Current Figure 4. 3rd Order Intercept Point
f , GAIN-BANDWIDTH PRODUCT (GHz)
T
02040
8
6
4
2
060 80 100
VCE = 10 Vdc
f = 1 GHz
120 140
IC, COLLECTOR CURRENT (mA)
P , OUTPUT POWER (dBm)
out
40
Pin, INPUT POWER (dBm)
30
20
10
0
–10
–40 –30 –20 –10
(3RD ORDER
INTERCEPT)
01020
f
1
= 500 MHz
f2 = 500.3 MHz
VCE = 10 V
IC = 75 mA
Pout (–1 dB)
–20
–30
Pin
Pout
+35 dBm IP3
TYPICAL CHARACTERISTICS
MRF581
MRF581 MRF5812R1, R2
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF581
Figure 5. GUmax — Maximum Unilateral Gain,
|S21|2 versus Frequency Figure 6. GAmax, Maximum Available Gain
versus Frequency
Figure 7. Minimum Noise Figure and Gain
Associated with Minimum Noise
Figure versus Frequency
Figure 8. Noise Figure versus Collector
Current f = 500 MHz
Figure 9. Noise Figure versus Collector Current Figure 10. Noise Figure and Gain Associated
with Noise Figure versus Collector Current
25
0.20.1 f, FREQUENCY (GHz)
20
15
GAIN (dB)
|S21|2
GUmax VCE = 10 V
IC = 75 mA
GUmax = |S21|2
(1 – |S11|2)(1 – |S22|2)
10
5
00.3 0.5 0.7 1 2 3 5 7 10
GAmax = |S21|
|S12|(K
±
K2–1
Ǹ
), K
≥
1
25
f, FREQUENCY (GHz)
20
15
GAIN (dB)
10
5
0
0.3 0.5 0.7 1 2 3
VCE = 10 V
IC = 75 mA
25
0.20.1 f, FREQUENCY (GHz)
20
15
10
5
00.3 0.5 0.7 1
GNF, GAIN ASSOCIATED WITH NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
3
2
1
0
GNF
MRF581
MRF581
VCE = 10 V
IC = 50 mA
250 IC, COLLECTOR CURRENT (mA)
50 75 100 125
NF, NOISE FIGURE (dB)
3
2
1
0
4
5
Γ
S =
Γ
L = 0
Zo = 50
Ω
4
MRF581
VCE = 10 Vdc
IC, COLLECTOR CURRENT (mA)
NF, NOISE FIGURE (dB)
3
2
1
250 IC, COLLECTOR CURRENT (mA)
50 75 100 125
NF, NOISE FIGURE (dB)
3
2
1
0
4
5
4
250 50 75 100 125
0
5
Γ
S =
Γ
L = 0
Zo = 50
ΩΓ
S =
Γ
L = 0
Zo = 50
Ω
MRF581
MRF581
VCE = 10 V
f = 200 MHz VCE = 10 Vdc
f = 50 MHz
NFmin NF50
W
NF50
W
NF50
W
Γ
S =
Γ
opt
5
MRF581 MRF5812R1, R2MOTOROLA RF DEVICE DATA
Figure 11. MRF581, MRF5812 Functional Circuit Schematic
Figure 12. Cib Input Capacitance versus Voltage Figure 13. Ccb, Cob Collector–Base Capacitance
versus Voltage
TYPICAL CHARACTERISTICS
MRF5812
*BIAS
TEE **SLUG TUNER *BIAS
TEE
**SLUG TUNER RF OUTPUT
RF INPUT
***
D.U.T.
**MICROLAB/FXR
**SF–11N FOR f < 1 GHz
**SF–31N FOR f > 1 GHz
VBE VCE = 10 Vdc
*HP11590B BIAS
*NETWORK
***HP11608A TRANSISTOR FIXTURE
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
12
10
8
6
4
2
0321
VEB, EMITTER–BASE VOLTAGE (VOLTS)
f = 1 MHz
Cib
5
2
00Vcb, COLLECTOR–BASE (VOLTS)
4
3
1
24 6810
f = 1 MHz
Cob
Ccb
MRF581 MRF5812R1, R2
6MOTOROLA RF DEVICE DATA
Figure 14. Minimum Noise Figure and Gain
Associated with Noise Figure versus
Frequency
Figure 15. Noise Figure and Insertion Gain
versus Collector Current
Figure 16. GUmax — Maximum Unilateral Gain,
|S21|2 versus Frequency Figure 17. GAmax, Maximum Available Gain
versus Frequency
Figure 18. Gain–Bandwidth Product versus
Collector Current Figure 19. 3rd Order Intercept Point and 1.0 dB
Compression Point
GNF, GAIN ASSOCIATED WITH NOISE FIGURE (dB)
NOISE FIGURE (dB)
30
24
f, FREQUENCY (GHz)
0.2 0.3
18
12
6
00.1 0.5 0.7 10
1
2
3
GNF, GAIN ASSOCIATED WITH NOISE FIGURE (dB)
NOISE FIGURE (dB)
20
16
IC, COLLECTOR CURRENT (mA)
25
12
8
4
000
1
2
3
50 75 100 125
4
0.15 f, FREQUENCY (GHz)
0.3 0.5 1 20.7 3
GAIN (dB)
25
20
15
10
0
5
0f, FREQUENCY (GHz)
0.3 0.5 1 20.7 3
GAIN (dB)
25
20
15
10
0
5
f , GAIN-BANDWIDTH PRODUCT (GHz)
T
IC, COLLECTOR CURRENT (mA)
0
8
4
020 6040 80 100
6
2
120 140
GNF
VCE = 10 Vdc
IC = 50 mA
CKT — FIGURE 1
NFMIN
|S21|2
NF50
Ω
Γ
S =
Γ
L = 0
Zo = 50
Ω
f = 500 MHz
VCE = 10 Vdc
GUmax = |S21|2
(1 – |S11|2)(1 – |S22|2)
GUmax
|S21|2
VCE = 10 Vdc
IC = 75 mA
VCE = 10 Vdc
IC = 75 mA
GAmax = |S21|
|S12|(K
"
K2–1
Ǹ
),K
≥
1
VCE = 10 Vdc
f = 1 GHz
P , OUTPUT POWER (dBm)
out
40
Pin, INPUT POWER (dBm)
30
20
10
0
–10
–40 –30 –20 –10
(3RD ORDER
INTERCEPT)
01020
f
1
= 500 MHz
f2 = 500.3 MHz
VCE = 10 V
IC = 75 mA
Pout (–1 dB)
–20
–30
Pin
Pout
+35 dBm IP3
7
MRF581 MRF5812R1, R2MOTOROLA RF DEVICE DATA
Figure 20. MRF581 Input/Output Reflection
Coefficient versus Frequency Figure 21. MRF581 Forward/Reverse
Transmission Coefficients versus Frequency
VCE = 10 V IC = 50 mA
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
25 50 100 150 250 50010
S111.5
10.5
S22 1
1.5
0.5
10 8 6 4 20.2
+90
°
+60
°
+30
°
0
°
–30
°
–60
°
–90
°
–120
°
–150
°
180
°
+150
°
+120
°
0.1
S21 S12
S21 S12
0.5
11.5
0.5
1
1.5
f = 0.3 GHz f = 0.3 GHz
f = 0.3 GHz
f = 0.3 GHz
V
CE
I
C
fS11 S21 S12 S22
VCE
(Volts)
IC
(mA)
f
(MHz) |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
5.0 25 300
500
1000
1500
0.69
0.72
0.73
0.76
–169
176
157
139
6.57
3.95
2.10
1.47
93
82
62
50
0.06
0.07
0.12
0.17
39
47
60
61
0.34
0.29
0.27
0.33
–129
–142
–165
–172
50 300
500
1000
1500
0.70
0.72
0.72
0.76
–173
173
157
138
7.14
4.27
2.24
1.61
93
82
65
53
0.05
0.07
0.13
0.18
45
53
62
61
0.38
0.34
0.33
0.37
–144
–157
–179
–173
75 300
500
1000
1500
0.70
0.72
0.72
0.76
–175
172
155
138
7.26
4.33
2.28
1.64
92
82
65
53
0.05
0.07
0.13
0.19
48
55
63
61
0.40
0.37
0.30
0.39
–148
–161
–176
–170
100 300
500
1000
1500
0.70
0.72
0.72
0.75
–176
172
155
137
7.30
4.34
2.28
1.64
92
82
65
53
0.05
0.07
0.13
0.19
48
56
63
61
0.40
0.37
0.36
0.39
–151
–163
–175
–168
10 25 300
500
1000
1500
0.66
0.69
0.70
0.74
–165
178
159
141
7.58
4.56
2.39
1.65
95
82
64
50
0.05
0.07
0.11
0.16
40
48
61
64
0.29
0.23
0.19
0.26
–106
–116
–141
–153
50 300
500
1000
1500
0.65
0.68
0.69
0.72
–169
175
157
139
8.25
4.96
2.60
1.82
94
82
65
52
0.05
0.07
0.12
0.17
46
54
63
63
0.30
0.24
0.22
0.27
–126
–138
–164
–171
75 300
500
1000
1500
0.66
0.68
0.69
0.72
–171
175
157
139
8.49
5.06
2.64
1.86
93
82
65
53
0.05
0.07
0.12
0.17
48
55
64
63
0.30
0.25
0.23
0.27
–132
–145
–170
–176
100 300
500
1000
1500
0.66
0.68
0.68
0.72
–172
174
157
139
8.46
5.06
2.64
1.86
93
82
65
52
0.05
0.07
0.12
0.17
49
56
64
63
0.30
0.25
0.23
0.27
–134
–147
–172
–177
15 25 300
500
1000
1500
0.65
0.67
0.68
0.72
–163
179
160
141
7.96
4.82
2.51
1.73
95
82
63
49
0.05
0.06
0.11
0.16
40
48
62
65
0.28
0.21
0.17
0.24
–92
–98
–119
–137
50 300
500
1000
1500
0.64
0.66
0.67
0.71
–167
177
159
141
8.76
5.37
2.75
1.91
94
82
65
51
0.0
0.06
0.11
0.16
46
54
64
64
0.26
0.20
0.16
0.22
–112
–122
–148
–157
75 300
500
1000
1500
0.64
0.66
0.69
0.70
–168
176
158
140
8.93
5.34
2.78
1.93
93
82
65
51
0.05
0.06
0.11
0.16
47
55
65
64
0.25
0.20
0.16
0.22
–117
–128
–154
–162
100 300
500
1000
1500
0.64
0.66
0.67
0.70
–169
176
158
140
8.91
5.33
2.78
1.93
93
82
64
51
0.05
0.06
0.11
0.16
48
56
65
64
0.25
0.19
0.16
0.21
–117
–129
–154
–160
Table 1. MRF581 Common Emitter S–Parameters
MRF581 MRF5812R1, R2
8MOTOROLA RF DEVICE DATA
V
CE
I
C
fS11 S21 S12 S22
VCE
(Volts)
IC
(mA)
f
(MHz) |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
5.0 25 100
300
500
1000
2000
3000
0.66
0.66
0.65
0.62
0.57
0.55
–123
–167
178
154
109
68
18.3
7.0
4.3
2.2
1.3
1.0
118
92
81
63
39
23
0.04
0.06
0.08
0.13
0.28
0.41
43
44
52
61
57
41
0.53
0.31
0.28
0.28
0.31
0.34
–
ā
79
–
ā
120
–
ā
133
–
ā
141
–
ā
148
–
ā
164
50 100
300
500
1000
2000
3000
0.64
0.65
0.65
0.61
0.56
0.52
–133
–171
175
152
109
70
20.2
7.6
4.6
2.3
1.3
1.0
114
91
81
63
39
23
0.04
0.06
0.08
0.13
0.28
0.41
44
50
56
63
57
39
0.51
0.34
0.31
0.28
0.30
0.29
–
ā
93
–
ā
137
–
ā
148
–
ā
149
–
ā
150
–
ā
169
75 100
300
500
1000
2000
3000
0.64
0.66
0.64
0.61
0.54
0.52
–137
–173
174
151
107
69
20.8
7.7
4.7
2.4
1.4
1.1
113
91
82
65
42
24
0.04
0.06
0.08
0.14
0.30
0.42
44
52
59
64
55
37
0.50
0.35
0.32
0.30
0.27
0.25
–
ā
99
–
ā
142
–
ā
154
–
ā
164
–
ā
167
–
ā
172
100 100
300
500
1000
2000
3000
0.64
0.65
0.64
0.61
0.54
0.52
–140
–174
173
151
107
65
20.8
7.6
4.7
2.4
1.4
1.1
112
90
81
65
42
24
0.03
0.06
0.08
0.15
0.30
0.42
44
53
60
64
54
37
0.50
0.36
0.33
0.31
0.27
0.25
–
ā
103
–
ā
145
–
ā
156
–
ā
166
–
ā
169
–
ā
174
10 25 100
300
500
1000
2000
3000
0.65
0.63
0.62
0.60
0.55
0.55
–112
–162
–178
157
112
69
20.2
8.0
5.0
2.5
1.4
1.0
121
93
82
63
39
23
0.04
0.05
0.07
0.11
0.25
0.39
46
46
52
63
61
47
0.56
0.29
0.25
0.26
0.35
0.40
–
ā
62
–
ā
93
–
ā
102
–
ā
112
–
ā
125
–
ā
145
50 100
300
500
1000
2000
3000
0.63
0.62
0.60
0.58
0.51
0.50
–122
–167
178
154
111
70
22.9
8.8
5.3
2.7
1.5
1.2
117
92
82
64
40
24
0.03
0.05
0.07
0.12
0.26
0.39
46
51
58
65
59
44
0.50
0.28
0.24
0.23
0.28
0.34
–
ā
74
–
ā
112
–
ā
122
–
ā
129
–
ā
132
–
ā
144
75 100
300
500
1000
2000
3000
0.63
0.63
0.62
0.58
0.52
0.50
–126
–168
177
154
111
70
23.8
9.0
5.5
2.8
1.5
1.2
116
92
82
65
41
24
0.03
0.05
0.07
0.12
0.26
0.39
45
51
58
65
58
42
0.49
0.28
0.24
0.23
0.27
0.32
–
ā
80
–
ā
120
–
ā
130
–
ā
137
–
ā
135
–
ā
145
100 100
300
500
1000
2000
3000
0.62
0.62
0.60
0.57
0.51
0.50
–128
–169
176
152
109
68
23.8
8.9
5.4
2.8
1.5
1.2
114
91
81
64
40
24
0.03
0.05
0.07
0.12
0.27
0.39
46
54
61
66
59
43
0.46
0.26
0.23
0.21
0.26
0.32
–
ā
82
–
ā
120
–
ā
130
–
ā
136
–
ā
134
–
ā
145
15 25 100
300
500
1000
2000
3000
0.66
0.63
0.61
0.58
0.54
0.56
–106
–159
–177
156
110
68
21
8.5
5.2
2.6
1.4
1.0
123
94
82
62
36
22
0.03
0.05
0.06
0.11
0.23
0.37
47
46
52
64
63
49
0.57
0.30
0.26
0.28
0.39
0.46
–
ā
54
–
ā
77
–
ā
84
–
ā
96
–
ā
115
–
ā
137
50 100
300
500
1000
2000
3000
0.62
0.60
0.58
0.56
0.52
0.52
–114
–163
–179
154
109
67
24
9.2
5.7
2.9
1.5
1.1
119
93
81
63
39
22
0.03
0.05
0.07
0.12
0.25
0.37
46
51
58
66
60
46
0.51
0.26
0.22
0.23
0.32
0.39
–
ā
64
–
ā
92
–
ā
100
–
ā
109
–
ā
118
–
ā
137
75 100
300
500
1000
2000
3000
0.62
0.59
0.58
0.56
0.50
0.52
–118
–165
179
154
109
67
24.6
9.4
5.7
2.9
1.5
1.1
117
92
81
63
38
22
0.03
0.05
0.07
0.12
0.25
0.37
46
53
60
66
60
46
0.48
0.24
0.21
0.22
0.31
0.38
–
ā
67
–
ā
96
–
ā
104
–
ā
111
–
ā
118
–
ā
136
100 100
300
500
1000
2000
3000
0.62
0.60
0.58
0.56
0.50
0.50
–121
–165
179
155
111
68
24.8
9.3
5.7
2.9
1.5
1.1
116
91
81
63
39
23
0.03
0.05
0.07
0.12
0.25
0.37
46
53
61
65
62
47
0.46
0.23
0.20
0.22
0.32
0.39
–
ā
68
–
ā
96
–
ā
102
–
ā
109
–
ā
117
–
ā
136
Table 2. MRF5812 Common Emitter S–Parameters
9
MRF581 MRF5812R1, R2MOTOROLA RF DEVICE DATA
Figure 22. MRF581 Constant Gain Contours Noise Figure Contours
f (MHz) ΓMS
500 0.91 ∠176°
ΓML
0.78 ∠77°
ΓMS
NF OPT
0.39 ∠159°
GAMAX
(dB)
18
Rn
(Ω)
10.5
NF
OPT
2.0
NF
(50 Ω)
2.5
Circuit Per Figure 14
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
Γ
MS NF OPT
25 50 150 25010 100 500
18 dB
Γ
MS
16
14
12
10
2.5
3.0
2.2
2.0
VCE = 10 V
IC = 50 mA
Figure 23. MRF581 Test Fixture Schematic
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor
C2, C3 — 1.0–10 pF, Johanson Capacitor
C7, C10 — 10 µF, Tantalum Capacitor
R1 — 1.0 kΩ Res.
RFC — VK–200, Ferroxcube
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
Board Material — 0.0625″ Thick Glass Teflon εr = 2.55
TL1, TL7, TL8 — Microstrip 0.162″ x 0.600″
TL2 — Microstrip 0.162″ x 1.000″
TL3 — Microstrip 0.162″ x 0.800″
TL4 — Microstrip 0.162″ x 0.440″
TL5 — Microstrip 0.120″ x 0.440″
TL6 — Microstrip 0.120″ x 1.160″
TL9, TL10 — Microstrip 0.025″ x 4.250″
R1
FB
RFC RFC
VBB VCC
C7 C8 C9 C10
FB
C6C5
TL9 TL10
TL1 C1 TL2 TL3 TL4 TL5 TL6 TL7 C4 TL8
RF
INPUT RF
OUTPUT
D.U.T.
C2 C3
MRF581 MRF5812R1, R2
10 MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317–01
ISSUE E
MRF581
NOTES:
1. DIMENSION D NOT APPLICABLE IN ZONE N.
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
3
1
42
SEATING
PLANE
L
K
D
A
N
G
F
C
4 PL
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A4.44 5.21 0.175 0.205
C1.90 2.54 0.075 0.100
D0.84 0.99 0.033 0.039
F0.20 0.30 0.080 0.012
G0.76 1.14 0.030 0.045
K7.24 8.13 0.285 0.320
L10.54 11.43 0.415 0.450
N––– 1.65 ––– 0.065
CASE 751–06
ISSUE T
MRF5812
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
SEATING
PLANE
14
58
A0.25 MCBSS
0.25 MBM
h
q
C
X 45
_
L
DIM MIN MAX
MILLIMETERS
A1.35 1.75
A1 0.10 0.25
B0.35 0.49
C0.19 0.25
D4.80 5.00
E1.27 BSCe3.80 4.00
H5.80 6.20
h
0 7
L0.40 1.25
q
0.25 0.50
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D
EH
A
Be
B
A1
CA
0.10
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MRF581/D
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