Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line ! Designed for high current low power amplifiers up to 1.0 GHz. * Low Noise (2.0 dB @ 500 MHz) * Low Intermodulation Distortion * High Gain IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON * State-of-the-Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization Nichrome Thin-Film Ballasting Resistors * Excellent Dynamic Range * Fully Characterized * High Current-Gain Bandwidth Product * MRF5812 available in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel CASE 317-01, STYLE 2 MRF581 CASE 751-06, STYLE 1 SORF (SO-8) MRF5812 MAXIMUM RATINGS Symbol MRF581 MRF5812 Unit Collector-Emitter Voltage Rating VCEO 18 15 Vdc Collector-Base Voltage VCBO 36 30 Vdc Emitter-Base Voltage VEBO 2.5 Vdc IC 200 mAdc Collector Current -- Continuous Thermal Resistance JC (1) MRF581 RJC 40 C/W Thermal Resistance JC (1) MRF5812 RJC 45 C/W Total Device Dissipation @ TC = 75C (1) Derate above TC = 75C PD MRF581 1.88 25 Watts mW/C Total Device Dissipation @ TC = 75C (1) Derate above TC = 75C PD MRF5812 1.67 22.2 Watts mW/C Tstg - 55 to +150 C TJmax 150 C Storage Junction Temperature Range Maximum Junction Temperature DEVICE MARKING MRF5812 = 5812 NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 9 RF DEVICE DATA MOTOROLA Motorola, Inc. 1998 MRF581 MRF5812R1, R2 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) MRF581 V(BR)CEO 18 15 -- -- -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) MRF5812 V(BR)CEO 15 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) MRF5812 V(BR)CES 30 -- -- Vdc Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) MRF581 V(BR)CBO 36 30 -- -- -- -- Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) MRF581 MRF5812 V(BR)EBO 2.5 -- -- Vdc Emitter Cutoff Current (VEB = 2.0 Vdc, VBE = 0) MRF581 IEBO -- -- 100 Adc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) MRF581 ICBO -- -- 100 Adc Collector Cutoff Current (VCB = 15 Vdc, VBE = 0, TC = 25C) MRF5812 ICBO -- -- 0.1 mAdc DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 hFE 50 -- 200 -- DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) MRF5812 hFE 30 90 200 -- Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MRF581 Cob -- 1.4 2.0 pF Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MRF5812 Ccb -- 1.2 2.0 pF Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) MRF581 fT -- 5.0 -- GHz Current-Gain -- Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) MRF5812 fT -- 5.5 -- GHz Noise Figure (Minimum) (Figure 11) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581 NFmin -- 2.0 3.0 dB Noise Figure (Minimum) (Figure 11) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF5812 NFmin -- 2.0 -- dB Noise Figure (50 Ohm Insertion) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF5812 NF50 -- 2.5 3.0 dB Power Gain at Optimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581 GNF 13 15.5 -- dB Insertion Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF5812 |S21|2 13 15.5 -- dB GUmax(2) -- 17 -- dB IMD(d3) -- - 65 -- dB ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS Maximum Unilateral Gain (IC = 75 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Intermodulation Distortion (3) (VCE = 10 V, IC = 75 mA, Vout = + 50 dBmV) NOTE: 1. 300 s pulse on Tektronix 576 or equivalent. |S21|2 2. GUmax = (1 - |S11|2)(1 - |S22|2) 3. 2 Tones, f1 = 497 MHz, f2 = 503 MHz, 3rd Order Single Tone reference. MRF581 MRF5812R1, R2 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS MRF581 5 10 f = 1 MHz f = 1 MHz 4 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 8 Cib 6 4 Cob 2 Ccb 1 2 0 3 0 1 2 VEB, EMITTER-BASE VOLTAGE (VOLTS) 0 3 Figure 1. Cib Input Capacitance versus Voltage 10 Figure 2. Ccb, Cob Collector-Base Capacitance versus Voltage 8 Pout Pout , OUTPUT POWER (dBm) f T, GAIN-BANDWIDTH PRODUCT (GHz) 4 6 8 2 Vcb, COLLECTOR-BASE VOLTAGE (VOLTS) 0 6 4 VCE = 10 Vdc f = 1 GHz 2 40 30 + 35 dBm IP3 (3RD ORDER INTERCEPT) Pout (-1 dB) 20 10 0 f1 = 500 MHz f2 = 500.3 MHz VCE = 10 V IC = 75 mA - 10 - 20 - 30 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) 120 Figure 3. Gain-Bandwidth Product versus Collector Current MOTOROLA RF DEVICE DATA 140 - 40 - 30 0 10 - 20 - 10 Pin, INPUT POWER (dBm) 20 Pin Figure 4. 3rd Order Intercept Point MRF581 MRF5812R1, R2 3 TYPICAL CHARACTERISTICS MRF581 25 25 |S21|2 GUmax = (1 - |S11|2)(1 - |S22|2) 15 GUmax 10 VCE = 10 V IC = 75 mA |S21|2 GAmax = 20 GAIN (dB) 0 0.1 0.2 0.3 0.5 0.7 1 2 f, FREQUENCY (GHz) 3 5 7 10 VCE = 10 V IC = 75 mA 0 0.3 10 Figure 5. GUmax -- Maximum Unilateral Gain, |S21|2 versus Frequency 0.5 0.7 1 f, FREQUENCY (GHz) 2 3 Figure 6. GAmax, Maximum Available Gain versus Frequency 25 S = opt 4 MRF581 3 15 MRF581 10 2 0 0.1 VCE = 10 V IC = 50 mA 0.2 5 MRF581 0.3 0.5 f, FREQUENCY (GHz) 0.7 2 NF50 W 0 1 0 Figure 7. Minimum Noise Figure and Gain Associated with Minimum Noise Figure versus Frequency 25 VCE = 10 Vdc 50 75 100 IC, COLLECTOR CURRENT (mA) 3 2 MRF581 0 25 4 S = L = 0 Zo = 50 MRF581 0 125 Figure 9. Noise Figure versus Collector Current 3 2 NF50 W 1 50 75 100 IC, COLLECTOR CURRENT (mA) MRF581 MRF5812R1, R2 4 5 NF, NOISE FIGURE (dB) 4 S = L = 0 Zo = 50 VCE = 10 V f = 200 MHz 1 0 125 Figure 8. Noise Figure versus Collector Current f = 500 MHz 5 NF50 W 4 3 1 NFmin 5 S = L = 0 Zo = 50 NF, NOISE FIGURE (dB) GNF 20 NF, NOISE FIGURE (dB) G NF , GAIN ASSOCIATED WITH NOISE FIGURE (dB) K1 15 5 5 |S21| (K K2 - 1), |S12| NF, NOISE FIGURE (dB) GAIN (dB) 20 1 VCE = 10 Vdc f = 50 MHz 0 25 50 75 100 IC, COLLECTOR CURRENT (mA) 0 125 Figure 10. Noise Figure and Gain Associated with Noise Figure versus Collector Current MOTOROLA RF DEVICE DATA **MICROLAB/FXR **SF-11N FOR f < 1 GHz **SF-31N FOR f > 1 GHz *HP11590B BIAS *NETWORK VBE VCE = 10 Vdc *** D.U.T. RF OUTPUT RF INPUT **SLUG TUNER *BIAS TEE **SLUG TUNER *BIAS TEE ***HP11608A TRANSISTOR FIXTURE Figure 11. MRF581, MRF5812 Functional Circuit Schematic TYPICAL CHARACTERISTICS MRF5812 12 5 f = 1 MHz f = 1 MHz C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10 8 Cib 6 4 3 Cob 2 Ccb 1 2 0 4 1 2 3 0 0 2 4 6 8 VEB, EMITTER-BASE VOLTAGE (VOLTS) Vcb, COLLECTOR-BASE (VOLTS) Figure 12. Cib Input Capacitance versus Voltage Figure 13. Ccb, Cob Collector-Base Capacitance versus Voltage MOTOROLA RF DEVICE DATA 10 MRF581 MRF5812R1, R2 5 3 NFMIN 12 2 VCE = 10 Vdc IC = 50 mA CKT -- FIGURE 1 6 0 0.1 0.2 0.3 0.5 f, FREQUENCY (GHz) 1 0 1 0.7 20 |S21|2 16 S = L = 0 Zo = 50 12 8 4 NF50 4 0 0 GUmax 15 GAmax = 20 VCE = 10 Vdc IC = 75 mA |S21|2 10 |S21| (K |S12| " K2 - 1), K 1 15 10 5 VCE = 10 Vdc IC = 75 mA 5 0 0.15 0 125 50 75 100 IC, COLLECTOR CURRENT (mA) 25 |S21|2 GUmax = (1 - |S11|2)(1 - |S22|2) GAIN (dB) GAIN (dB) 25 1 Figure 15. Noise Figure and Insertion Gain versus Collector Current 25 20 2 f = 500 MHz VCE = 10 Vdc Figure 14. Minimum Noise Figure and Gain Associated with Noise Figure versus Frequency 0 0.3 0.5 0.7 1 f, FREQUENCY (GHz) 2 3 0 Figure 16. GUmax -- Maximum Unilateral Gain, |S21|2 versus Frequency 8 0.3 0.5 0.7 1 f, FREQUENCY (GHz) 2 3 Figure 17. GAmax, Maximum Available Gain versus Frequency Pout Pout , OUTPUT POWER (dBm) f T, GAIN-BANDWIDTH PRODUCT (GHz) 3 NOISE FIGURE (dB) GNF 18 G NF, GAIN ASSOCIATED WITH NOISE FIGURE (dB) 24 NOISE FIGURE (dB) G NF, GAIN ASSOCIATED WITH NOISE FIGURE (dB) 30 6 4 VCE = 10 Vdc f = 1 GHz 2 40 30 + 35 dBm IP3 (3RD ORDER INTERCEPT) Pout (-1 dB) 20 10 0 f1 = 500 MHz f2 = 500.3 MHz VCE = 10 V IC = 75 mA - 10 - 20 - 30 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) 120 Figure 18. Gain-Bandwidth Product versus Collector Current MRF581 MRF5812R1, R2 6 140 - 40 - 30 0 10 20 - 20 - 10 Pin, INPUT POWER (dBm) Pin Figure 19. 3rd Order Intercept Point and 1.0 dB Compression Point MOTOROLA RF DEVICE DATA VCE = 10 V + j50 + j25 IC = 50 mA 1.5 S11 10 1.5 f = 0.3 GHz S21 +150 1 + j500 0.5 25 1.5 50 100 150 180 10 250 500 1 f = 0.3 GHz S22 0.5 f = 0.3 GHz 6 4 0.5 f = 0.3 GHz 1.5 2 0.1 S21 - j500 - j250 - j10 8 + 30 0.5 1 S12 + j250 1 0 + 60 +120 + j100 + j150 + j10 + 90 0.2 0 S12 - 30 -150 - j150 - 60 -120 - j100 - j25 - 90 - j50 Figure 20. MRF581 Input/Output Reflection Coefficient versus Frequency VCE (Volts) IC (mA) f (MHz) 5.0 25 10 15 Figure 21. MRF581 Forward/Reverse Transmission Coefficients versus Frequency S11 S21 - 169 176 157 139 0.70 0.72 0.72 0.76 - 173 173 157 138 300 500 1000 1500 0.70 0.72 0.72 0.76 100 300 500 1000 1500 25 S22 93 82 62 50 |S12| 0.06 0.07 0.12 0.17 7.14 4.27 2.24 1.61 93 82 65 53 - 175 172 155 138 7.26 4.33 2.28 1.64 0.70 0.72 0.72 0.75 - 176 172 155 137 300 500 1000 1500 0.66 0.69 0.70 0.74 50 300 500 1000 1500 75 300 500 1000 1500 50 300 500 1000 1500 75 S12 |S21| 6.57 3.95 2.10 1.47 |S11| 0.69 0.72 0.73 0.76 39 47 60 61 |S22| 0.34 0.29 0.27 0.33 - 129 - 142 - 165 - 172 0.05 0.07 0.13 0.18 45 53 62 61 0.38 0.34 0.33 0.37 - 144 - 157 - 179 - 173 92 82 65 53 0.05 0.07 0.13 0.19 48 55 63 61 0.40 0.37 0.30 0.39 - 148 - 161 - 176 - 170 7.30 4.34 2.28 1.64 92 82 65 53 0.05 0.07 0.13 0.19 48 56 63 61 0.40 0.37 0.36 0.39 - 151 - 163 - 175 - 168 - 165 178 159 141 7.58 4.56 2.39 1.65 95 82 64 50 0.05 0.07 0.11 0.16 40 48 61 64 0.29 0.23 0.19 0.26 - 106 - 116 - 141 - 153 0.65 0.68 0.69 0.72 - 169 175 157 139 8.25 4.96 2.60 1.82 94 82 65 52 0.05 0.07 0.12 0.17 46 54 63 63 0.30 0.24 0.22 0.27 - 126 - 138 - 164 - 171 300 500 1000 1500 0.66 0.68 0.69 0.72 - 171 175 157 139 8.49 5.06 2.64 1.86 93 82 65 53 0.05 0.07 0.12 0.17 48 55 64 63 0.30 0.25 0.23 0.27 - 132 - 145 - 170 - 176 100 300 500 1000 1500 0.66 0.68 0.68 0.72 - 172 174 157 139 8.46 5.06 2.64 1.86 93 82 65 52 0.05 0.07 0.12 0.17 49 56 64 63 0.30 0.25 0.23 0.27 - 134 - 147 - 172 - 177 25 300 500 1000 1500 0.65 0.67 0.68 0.72 - 163 179 160 141 7.96 4.82 2.51 1.73 95 82 63 49 0.05 0.06 0.11 0.16 40 48 62 65 0.28 0.21 0.17 0.24 - 92 - 98 - 119 - 137 50 300 500 1000 1500 0.64 0.66 0.67 0.71 - 167 177 159 141 8.76 5.37 2.75 1.91 94 82 65 51 0.0 0.06 0.11 0.16 46 54 64 64 0.26 0.20 0.16 0.22 - 112 - 122 - 148 - 157 75 300 500 1000 1500 0.64 0.66 0.69 0.70 - 168 176 158 140 8.93 5.34 2.78 1.93 93 82 65 51 0.05 0.06 0.11 0.16 47 55 65 64 0.25 0.20 0.16 0.22 - 117 - 128 - 154 - 162 100 300 500 1000 1500 0.64 0.66 0.67 0.70 - 169 176 158 140 8.91 5.33 2.78 1.93 93 82 64 51 0.05 0.06 0.11 0.16 48 56 65 64 0.25 0.19 0.16 0.21 - 117 - 129 - 154 - 160 Table 1. MRF581 Common Emitter S-Parameters MOTOROLA RF DEVICE DATA MRF581 MRF5812R1, R2 7 VCE (Volts) IC (mA) f (MHz) 5.0 25 50 75 100 10 25 50 75 100 15 25 50 75 100 S11 S21 118 92 81 63 39 23 20.2 7.6 4.6 2.3 1.3 1.0 114 91 81 63 39 23 - 137 - 173 174 151 107 69 20.8 7.7 4.7 2.4 1.4 1.1 0.64 0.65 0.64 0.61 0.54 0.52 - 140 - 174 173 151 107 65 100 300 500 1000 2000 3000 0.65 0.63 0.62 0.60 0.55 0.55 100 300 500 1000 2000 3000 - 123 - 167 178 154 109 68 |S21| 18.3 7.0 4.3 2.2 1.3 1.0 100 300 500 1000 2000 3000 0.64 0.65 0.65 0.61 0.56 0.52 - 133 - 171 175 152 109 70 100 300 500 1000 2000 3000 0.64 0.66 0.64 0.61 0.54 0.52 100 300 500 1000 2000 3000 S22 100 300 500 1000 2000 3000 S12 |S12| 0.04 0.06 0.08 0.13 0.28 0.41 |S11| 0.66 0.66 0.65 0.62 0.57 0.55 43 44 52 61 57 41 |S22| 0.53 0.31 0.28 0.28 0.31 0.34 - 79 - 120 - 133 - 141 - 148 - 164 0.04 0.06 0.08 0.13 0.28 0.41 44 50 56 63 57 39 0.51 0.34 0.31 0.28 0.30 0.29 - 93 - 137 - 148 - 149 - 150 - 169 113 91 82 65 42 24 0.04 0.06 0.08 0.14 0.30 0.42 44 52 59 64 55 37 0.50 0.35 0.32 0.30 0.27 0.25 - 99 - 142 - 154 - 164 - 167 - 172 20.8 7.6 4.7 2.4 1.4 1.1 112 90 81 65 42 24 0.03 0.06 0.08 0.15 0.30 0.42 44 53 60 64 54 37 0.50 0.36 0.33 0.31 0.27 0.25 - 103 - 145 - 156 - 166 - 169 - 174 - 112 - 162 - 178 157 112 69 20.2 8.0 5.0 2.5 1.4 1.0 121 93 82 63 39 23 0.04 0.05 0.07 0.11 0.25 0.39 46 46 52 63 61 47 0.56 0.29 0.25 0.26 0.35 0.40 - 62 - 93 - 102 - 112 - 125 - 145 0.63 0.62 0.60 0.58 0.51 0.50 - 122 - 167 178 154 111 70 22.9 8.8 5.3 2.7 1.5 1.2 117 92 82 64 40 24 0.03 0.05 0.07 0.12 0.26 0.39 46 51 58 65 59 44 0.50 0.28 0.24 0.23 0.28 0.34 - 74 - 112 - 122 - 129 - 132 - 144 100 300 500 1000 2000 3000 0.63 0.63 0.62 0.58 0.52 0.50 - 126 - 168 177 154 111 70 23.8 9.0 5.5 2.8 1.5 1.2 116 92 82 65 41 24 0.03 0.05 0.07 0.12 0.26 0.39 45 51 58 65 58 42 0.49 0.28 0.24 0.23 0.27 0.32 - 80 - 120 - 130 - 137 - 135 - 145 100 300 500 1000 2000 3000 0.62 0.62 0.60 0.57 0.51 0.50 - 128 - 169 176 152 109 68 23.8 8.9 5.4 2.8 1.5 1.2 114 91 81 64 40 24 0.03 0.05 0.07 0.12 0.27 0.39 46 54 61 66 59 43 0.46 0.26 0.23 0.21 0.26 0.32 - 82 - 120 - 130 - 136 - 134 - 145 100 300 500 1000 2000 3000 0.66 0.63 0.61 0.58 0.54 0.56 - 106 - 159 - 177 156 110 68 21 8.5 5.2 2.6 1.4 1.0 123 94 82 62 36 22 0.03 0.05 0.06 0.11 0.23 0.37 47 46 52 64 63 49 0.57 0.30 0.26 0.28 0.39 0.46 - 54 - 77 - 84 - 96 - 115 - 137 100 300 500 1000 2000 3000 0.62 0.60 0.58 0.56 0.52 0.52 - 114 - 163 - 179 154 109 67 24 9.2 5.7 2.9 1.5 1.1 119 93 81 63 39 22 0.03 0.05 0.07 0.12 0.25 0.37 46 51 58 66 60 46 0.51 0.26 0.22 0.23 0.32 0.39 - 64 - 92 - 100 - 109 - 118 - 137 100 300 500 1000 2000 3000 0.62 0.59 0.58 0.56 0.50 0.52 - 118 - 165 179 154 109 67 24.6 9.4 5.7 2.9 1.5 1.1 117 92 81 63 38 22 0.03 0.05 0.07 0.12 0.25 0.37 46 53 60 66 60 46 0.48 0.24 0.21 0.22 0.31 0.38 - 67 - 96 - 104 - 111 - 118 - 136 100 300 500 1000 2000 3000 0.62 0.60 0.58 0.56 0.50 0.50 - 121 - 165 179 155 111 68 24.8 9.3 5.7 2.9 1.5 1.1 116 91 81 63 39 23 0.03 0.05 0.07 0.12 0.25 0.37 46 53 61 65 62 47 0.46 0.23 0.20 0.22 0.32 0.39 - 68 - 96 - 102 - 109 - 117 - 136 Table 2. MRF5812 Common Emitter S-Parameters MRF581 MRF5812R1, R2 8 MOTOROLA RF DEVICE DATA + j50 + j100 + j25 + j150 3.0 + j10 2.2 + j250 2.5 MS NF OPT 0 MS 18 dB 10 + j500 2.0 25 50 100 150 250 500 - j500 16 - j250 14 - j10 - j150 12 10 - j100 - j25 VCE = 10 V IC = 50 mA - j50 f (MHz) MS ML MS NF OPT 0.91 176 0.78 77 0.39 159 500 GAMAX (dB) Rn () 18 10.5 NF NF OPT (50 ) 2.0 2.5 Circuit Per Figure 14 Figure 22. MRF581 Constant Gain Contours Noise Figure Contours RFC RFC VBB C7 VCC C8 C9 C10 FB TL9 R1 TL10 FB C5 RF INPUT TL1 C1 C6 TL2 TL3 TL4 D.U.T. TL5 TL6 C2 C1, C4, C5, C6, C8, C9 -- 1000 pF, Chip Capacitor C2, C3 -- 1.0 - 10 pF, Johanson Capacitor C7, C10 -- 10 F, Tantalum Capacitor R1 -- 1.0 k Res. RFC -- VK-200, Ferroxcube FB -- Ferrite Bead, Ferroxcube, 56-590-65/3B Board Material -- 0.0625 Thick Glass Teflon r = 2.55 TL7 C4 TL8 RF OUTPUT C3 TL1, TL7, TL8 -- Microstrip 0.162 x 0.600 TL2 -- Microstrip 0.162 x 1.000 TL3 -- Microstrip 0.162 x 0.800 TL4 -- Microstrip 0.162 x 0.440 TL5 -- Microstrip 0.120 x 0.440 TL6 -- Microstrip 0.120 x 1.160 TL9, TL10 -- Microstrip 0.025 x 4.250 Figure 23. MRF581 Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF581 MRF5812R1, R2 9 PACKAGE DIMENSIONS L A NOTES: 1. DIMENSION D NOT APPLICABLE IN ZONE N. D 1 4 2 3 DIM A C D F G K L N K N 4 PL G C F SEATING PLANE STYLE 2: PIN 1. 2. 3. 4. 8 5 0.25 H M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 COLLECTOR EMITTER BASE EMITTER NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C E B 0.25 M C B S A INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.080 0.012 0.030 0.045 0.285 0.320 0.415 0.450 --- 0.065 CASE 317-01 ISSUE E MRF581 D A MILLIMETERS MIN MAX 4.44 5.21 1.90 2.54 0.84 0.99 0.20 0.30 0.76 1.14 7.24 8.13 10.54 11.43 --- 1.65 S CASE 751-06 ISSUE T MRF5812 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER COLLECTOR COLLECTOR EMITTER EMITTER BASE BASE EMITTER DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ Motorola reserves the right to make changes without further notice to any products herein. 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