BCW66
SMALL SIGNAL NPN TRANSISTORS
■SILICONEPITAXIALPLANARNPN
TRANSISTORS
■MINIATUREPLASTICPACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■PNP COMPLEMENTIS BCW68
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type Marking
BCW66F EF
BCW66G EG
BCW66H EH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 75 V
V
CEO Collector-Emitter Voltage (IB=0) 45 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 0.8 A
ICM Collector Peak Current 1 A
IBBase Current 0.1 A
Ptot Total Dissipation at Tc=25o
C 360 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-amb •
Rthj-SR • Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Substrate Max 375
278
oC/W
oC/W
•Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE =RatedV
CES
VCE =RatedV
CES Tamb = 150 oC20
20 nA
µA
IEBO Collector Cut-off
Current (IE=0) V
EB =4V 20 nA
V
(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB=0)
I
C=10mA 45 V
V
V
(BR)CES∗Collector-Emitter
Breakdown Voltage
(VEB =0)
I
C=10µA75
V
V
V
(BR)EBO Emitter-Base
Breakdown Voltage
(IC=0)
I
C=10µA5V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=100mA I
B=10mA
I
C=500mA I
B=50mA 0.3
0.7 V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC=100mA I
B=10mA
I
C=500mA I
B=50mA 1.25
2V
V
hFE∗DC Current Gain IC=0.1mA V
CE =10V
for group F
for group G
for group H
IC=10mA V
CE =1V
for group F
for group G
for group H
IC=100mA V
CE =1V
for group F
for group G
for group H
IC=500mA V
CE =2V
for group F
for group G
for group H
35
50
80
75
110
180
100
160
250
35
60
100
250
400
630
fTTransition Frequency IC=20mA V
CE = 10V f = 100MHz 100 MHz
CCB Collector Base
Capacitance IE=0 V
CB = 10 V f = 1 MHz 12 pF
CEB Emitter Base
Capacitance IC=0 V
CE =0.5V f=1MHz 80 pF
NF Noise Figure VCE =5V I
C=0.2mA f=1KHz
∆f = 200 Hz RG=2KΩ210dB
t
on Switching On Time IC=150mA I
B1 =-I
B2 =15 mA
RL=150Ω100 ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤2%
BCW66
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DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
BCW66
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Information furnished is believed to be accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequencesofuse ofsuch informationnor for anyinfringement of patentsor otherrights ofthird parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatentrights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil - Canada - China- France- Germany- HongKong - Italy- Japan- Korea- Malaysia- Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
.
BCW66
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