SCHOTTKY DIE SPECIFICATION TYPE: MBR340
40 V 3 A (Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.55 Volt
IR MAX 0.08 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um
2
Mil
2
A1524 60.00
B1424 56.1
C1444 56.9
D254 10
305 12
Micro-Electro-Magnetical Tech Co.
Spec. Limit
40
3
Thickness (Max)
0.1
Top Metal Pad Size
Passivation Seal
Thickness (Min)
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
General Description:
80
-65 to +125
-65 to +125
0.56 @ 3 Amperes,Ta= 25°C
Maximum Instantaneous Reverse Voltage
VR= 40 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
