ADVANCE 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG- 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES * Temperature Compensated Self Refresh (TCSR) * Fully synchronous; all signals registered on positive edge of system clock * Internal pipelined operation; column address can be changed every clock cycle * Internal banks for hiding row access/precharge * Programmable burst lengths: 1, 2, 4, 8, or full page * Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes * Self Refresh Mode * 64ms, 8,192-cycle refresh * LVTTL-compatible inputs and outputs * Low voltage power supply * Deep Power Down * Partial Array Self Refresh power-saving mode * Industrial operating temperature (-40oC to +85oC) OPTIONS PIN ASSIGNMENT (Top View) 54-Ball FBGA 1 MARKING * VDD/VDDQ 2.5V/1.8V 1.8V/1.8V * Configurations 16 Meg x 16 (4 Meg x 16 x 4 banks) * WRITE Recovery (tWR/tDPL) tWR = 2 CLK * Plastic Packages - OCPL1 54-ball FBGA (8mm x 14mm) * Timing (Cycle Time) 8.0ns @ CL = 3 (125MHz) 10ns @ CL = 3 (100MHz) V H 2 3 4 5 6 7 8 9 A VSS DQ15 VSSQ VDDQ DQ0 VDD B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 C DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CK CKE CAS\ RAS\ WE\ G NC/A12 A11 A9 BA0 BA1 CS\ H A8 A7 A6 A0 A1 A10 J VSS A5 A4 A3 A2 VDD 16M16 FG1 -8 -10 Configuration Refresh Count Row Addressing 16 Meg x 16 4 Meg x 16 x 4 banks 8K 8K (A0-A12) Bank Addressing 4 (BA0, BA1) Column Addressing 512 (A0-A8) NOTE: 1. See page 58 for FBGA Device Marking Table. KEY TIMING PARAMETERS 256Mb SDRAM PART NUMBERS PART NUMBER MT48V16M16LFFG MT48H16M16LFFG ARCHITECTURE 16 Meg x 16 16 Meg x 16 VDD 2.5V 1.8V SPEED GRADE CLOCK FREQUENCY ACCESS TIME CL=1* CL=2* CL=3* SETUP HOLD TIME TIME -8 -10 125 MHz 100 MHz - - - - 7ns 7ns 2.5ns 2.5ns 1.0ns 1.0ns -8 100 MHz - 8ns - 2.5ns 1.0ns -10 83 MHz - 8ns - 2.5ns 1.0ns -8 50 MHz 19ns - - 2.5ns 1.0ns -10 40 MHz 22ns - - 2.5ns 1.0ns *CL = CAS (READ) latency 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PUROPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 256Mb: x16 MOBILE SDRAM 256Mb SDRAM PART NUMBERS PART NUMBER VDD/VDDQ MT48V16M16LFFG-10 2.5V / 1.8V ARCHITECTURE 16 Meg x 16 PACKAGE 54-BALL FBGA MT48V16M16LFFG-8 2.5V / 1.8V 16 Meg x 16 54-BALL FBGA MT48H16M16LFFG-10 1.8V / 1.8V 16 Meg x 16 54-BALL FBGA MT48H16M16LFFG-8 1.8V / 1.8V 16 Meg x 16 54-BALL FBGA GENERAL DESCRIPTION The 256Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a highspeed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, highspeed, random-access operation. The 256Mb SDRAM is designed to operate in 2.5V and 1.8V memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible. SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during a burst access. The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16's 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM TABLE OF CONTENTS Functional Block Diagram - 16 Meg x 16 .................. 54-Ball FBGA Pin Description .................................... 4 5 Functional Description ............................................... Initialization ........................................................... Register Definition ................................................ Mode Register ................................................... Burst Length ................................................ Burst Type ................................................... CAS Latency ................................................ Operating Mode .......................................... Write Burst Mode ........................................ Extended Mode Register ........................... Temperature Compensated Self Refresh Partial Array Self Refresh ........................... Deep Power Down ...................................... Driver Strength ........................................... Commands ................................................................... Truth Table 1 (Commands and DQM Operation) .............. Command Inhibit .................................................. No Operation (NOP) .............................................. Load mode register ................................................ Active ....................................................................... Read ....................................................................... Write ....................................................................... Precharge ................................................................ Auto Precharge ....................................................... Auto Refresh ........................................................... Self Refresh ............................................................. Operation ..................................................................... Bank/Row Activation ............................................. Reads ....................................................................... Writes ....................................................................... Precharge ................................................................ Power-Down ........................................................... Deep Power-Down ................................................ Clock Suspend ........................................................ Burst Read/Single Write ....................................... Concurrent Auto Precharge ................................. 6 6 6 6 6 7 8 8 8 9 9 10 10 10 11 11 12 12 12 12 12 12 12 12 12 13 14 14 15 21 23 23 24 24 24 25 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 Truth Table 2 (CKE) ...................................................... Truth Table 3 (Current State, Same Bank) ...................... Truth Table 4 (Current State, Different Bank) ................. 27 28 30 Absolute Maximum Ratings ....................................... 32 DC Electrical Characteristics and Operating Conditions ..................................... 32 Capacitance .................................................................. 33 AC Electrical Characteristics (Timing Table) ......... 33 IDD Specifications and Conditions ............................. 35 Timing Waveforms Initialize and Load mode register ........................ Power-Down Mode ................................................ Clock Suspend Mode ............................................ Auto Refresh Mode ................................................ Self Refresh Mode .................................................. Reads Read - Without Auto Precharge ..................... Read - With Auto Precharge ........................... Single Read - Without Auto Precharge ......... Single Read - With Auto Precharge ............... Alternating Bank Read Accesses .................... Read - Full-Page Burst .................................... Read - DQM Operation ................................... Writes Write - Without Auto Precharge ..................... Write - With Auto Precharge ........................... Single Write - Without Auto Precharge ......... Single Write - Without Auto Precharge ......... Alternating Bank Write Accesses ................... Write - Full-Page Burst .................................... Write - DQM Operation ................................... Package Dimensions 54-pin FBGA ............................................................ 3 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM FUNCTIONAL BLOCK DIAGRAM 16 Meg x 16 SDRAM CKE CLK COMMAND DECODE CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1 MODE REGISTER REFRESH 13 COUNTER 12 ROWADDRESS MUX 13 13 BANK0 ROWADDRESS LATCH & DECODER 8192 BANK0 MEMORY ARRAY (8,192 x 512 x 16) 2 DQML, DQMH SENSE AMPLIFIERS 16 8192 15 ADDRESS REGISTER 2 DATA OUTPUT REGISTER I/O GATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS 2 A0-A12, BA0, BA1 2 BANK CONTROL LOGIC 16 16 512 (x16) DQ0DQ15 DATA INPUT REGISTER COLUMN DECODER 9 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 COLUMNADDRESS COUNTER/ LATCH 9 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM BALL DESCRIPTIONS 54-BALL FBGA SYMBOL TYPE F2 CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. F3 CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), ACTIVE POWER-DOWN (row active in any bank) or CLOCK SUSPEND operation (burst/access in progress). CKE is synchronous except after the device enters power-down and self refresh modes, where CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK, are disabled during power-down and self refresh modes, providing low standby power. CKE may be tied HIGH. G9 CS# Input Chip Select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external bank selection on systems with multiple banks. CS# is considered part of the command code. F7, F8, F9 CAS#, RAS#, WE# Input Command Inputs: CAS#, RAS#, and WE# (along with CS#) define the command being entered. E8, F1 LDQM, UDQM Input Input/Output Mask: DQM is sampled HIGH and is an input mask signal for write accesses and an output enable signal for read accesses. Input data is masked during a WRITE cycle. The output buffers are placed in a High-Z state (two-clock latency) when during a READ cycle. LDQM corresponds to DQ0-DQ7, UDQM corresponds to DQ8-DQ15. LDQM and UDQM are considered same state when referenced as DQM. G7, G8 BA0, BA1 Input Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. These pins also provide the op-code during a LOAD MODE REGISTER command H7, H8, J8, J7, J3, J2, H3, H2, H1, G3, H9, G2,G1 A0-A12 Input Address Inputs: A0-A12 are sampled during the ACTIVE command (rowaddress A0-A12) and READ/WRITE command (column-address A0-A8; with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. A8, B9, B8, C9, C8, D9, D8, E9, E1, D2, D1, C2, C1, B2, B1, A2 DQ0-DQ15 I/O E2, A7, B3, C7, D3 NC VDDQ - Supply A3, B7, C3, D7, V SSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity. A9, E7, J9 VDD Supply Power Supply: Voltage dependant on option. A1, E3, J1 VSS Supply Ground. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 DESCRIPTION Data Input/Output: Data bus No Connect: This pin should be left unconnected. DQ Power: Provide isolated power to DQs for improved noise immunity. 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM FUNCTIONAL DESCRIPTION REGISTER DEFINITION In general, the 256Mb SDRAMs (4 Meg x 16 x 4 banks) are quad-bank DRAMs that operate at 2.5V or 1.8V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16's 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0-A12 select the row). The address bits ( x16: A0-A8) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. Prior to normal operation, the SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation. Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in Figure 1. The mode register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power. Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4-M6 specify the CAS latency, M7 and M8 specify the operating mode, M9 specifies the write burst mode, and M10, M11, and M12 should be set to zero. M13and M14 should be set to zero to prevent extended mode reister. The mode register must be loaded when all banks are idle, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. Burst Length Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in Figure 1. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a fullpage burst is available for the sequential type. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1-A8 (x16) when the burst length is set to two; by A2-A8 (x16) when the burst length is set to four; and by A3-A8 (x16) when the burst length is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached. Initialization SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Once power is applied to VDD and VDDQ (simultaneously) and the clock is stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin), the SDRAM requires a 100s delay prior to issuing any command other than a COMMAND INHIBIT or NOP. CKE must be held high during the entire initialization period until the PRECHARGE command has been issued. Starting at some point during this 100s period and continuing at least through the end of this period, COMMAND INHIBIT or NOP commands should be applied. Once the 100s delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command should be applied. All banks must then be precharged, thereby placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is ready for mode register programming. Because the mode register will power up in an unknown state, it should be loaded prior to applying any operational command. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Table 1. Table 1 Burst Definition Burst Starting Column Order of Accesses Within a Burst Length Address Type = Sequential Type = Interleaved 2 Figure 1 Mode Register Definition BA1 BA0 A12 A11 A10 A9 A8 14 8 13 Reserved** 12 11 10 Reserved* 9 A7 A6 7 WB Op Mode 6 A5 A4 5 4 CAS Latency A3 A2 3 1 2 BT 0 4 Address Bus A0 A1 Mode Register (Mx) Burst Length 8 Burst Length *Should program M12, M11, M10 = 0, 0, 0 to ensure compatibility with future devices. M2 M1 M0 ** BA1, BA0 = 0, 0 to prevent Extended Mode Register. M3 = 0 M3 = 1 0 0 0 1 1 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Full Page Reserved 0 Sequential 1 Interleaved M6 M5 M4 CAS Latency 0 0 0 Reserved 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved M8 M7 M6-M0 Operating Mode 0 0 Defined Standard Operation - - - M9 Write Burst Mode 0 Programmed Burst Length 1 Single Location Access n = A0-8 (location 0-y) 0-1 1-0 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Cn, Cn + 1, Cn + 2 Cn + 3, Cn + 4... ...Cn - 1, Cn... 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not Supported NOTE: 1. For full-page accesses: y = 512 (x16) 2. For a burst length of two, A1-A8 (x16) select the block-of-two burst; A0 selects the starting column within the block. 3. For a burst length of four, A2-A8 (x16) select the block-of-four burst; A0-A1 select the starting column within the block. 4. For a burst length of eight, A3-A8 (x16) select the block-of-eight burst; A0-A2 select the starting column within the block. 5. For a full-page burst, the full row is selected and A0-A8 (x16) select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For a burst length of one, A0-A8 (x16) select the unique column to be accessed, and mode register bit M3 is ignored. Burst Type M3 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 Full Page (y) A0 0 1 A1 A0 0 0 0 1 1 0 1 1 A2 A1 A0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 All other states reserved 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in Figure 2. Table 2 below indicates the operating frequencies at which each CAS latency setting can be used. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M0M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses. Figure 2 CAS Latency T0 T1 T2 T3 T4 Table 2 CAS Latency T5 CLK COMMAND READ NOP NOP NOP ALLOWABLE OPERATING FREQUENCY (MHz) NOP READ X = 0 cycles ADDRESS BANK, COL n BANK, COL b DOUT n+2 DOUT n+1 DOUT n DQ SPEED DOUT n+3 DOUT b CAS Latency = 1 T0 T1 T2 T3 T4 T5 CAS CAS CAS LATENCY = 1 LATENCY = 2 LATENCY = 3 -8 50 100 125 - 10 40 83 100 T6 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP NOP READ NOP X = 1 cycle BANK, COL b DOUT n+2 DOUT n+1 DOUT n DQ DOUT n+3 DOUT b CAS Latency = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP NOP READ NOP NOP X = 2 cycles BANK, COL b DOUT n DQ DOUT n+1 DOUT n+2 DOUT n+3 DOUT b CAS Latency = 3 NOTE: Each READ command may be to either bank. DQM is LOW. DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM EXTENDED MODE REGISTER BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus 14 13 12 11 10 9 Extended Mode Register (Ex) 1 0 8 7 6 5 All have to be set to "0" A4 4 3 DS TCSR 2 0 A3 Maximum Case Temp 1 1 85C 0 Half Strength 0 0 70C 1 Full Strength 0 1 45C 1 0 15C A5 Driver Strength 1 PASR Self Refresh Coverage A2 A1 A0 0 0 0 Four Banks 0 0 1 Two Banks (BA1=0) 0 1 0 One Bank (BA1=BA0=0) 0 1 1 RFU 1 0 0 RFU 1 0 1 Half Bank (BA1=BA0=0) 1 1 0 Quarter Bank (BA1=BA0=0) 1 1 1 RFU NOTE: 1. E14 and E13 (BA1 and BA0) must be "1, 0" to select the Extended Mode Register (vs. the base Mode Register). TEMPERATURE COMPENSATED SELF REFRESH Temperature Compensated Self Refresh allows the controller to program the Refresh interval during SELF REFRESH mode, according to the case temperature of the BATRAM device. This allows great power savings during SELF REFRESH during most operating temperature ranges. Only during extreme temperatures would the controller have to select a TCSR level that will guarantee data during SELF REFRESH. Every cell in the DRAM requires refreshing due to the capacitor losing its charge over time. The refresh rate is dependent on temperature. At higher temperatures a capacitor loses charge quicker than at lower temperatures, requiring the cells to be refreshed more often. Historically, during Self Refresh, the refresh rate has been set to accomodate the worst case, or highest temperature range expected. EXTENDED MODE REGISTER The Extended Mode Register controls the functions beyond those controlled by the Mode Register. These additional functions are special features of the BATRAM device. They include Temperature Compensated Self Refresh (TCSR) Control, and Partial Array Self Refresh (PASR). The Extended Mode Register is programmed via the Mode Register Set command (BA1=1,BA0=0) and retains the stored information until it is programmed again or the device loses power. The Extended Mode Register must be programmed with M6 through M12 set to "0". The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before before initiating any subsequent operation. Violating either of these requirements results in unspecified operation. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Thus, during ambiant temperatures, the power consumed during refresh was unnecessarily high, because the refresh rate was set to accommodate the higher temperatures. Setting M4 and M3, allow the DRAM to accomodate more specific temperature regions during SELF REFRESH. There are four temperature settings, which will vary the SELF REFRESH current according to the selected temperature. This selectable refresh rate will save power when the DRAM is operating at normal temperatures. DEEP POWER DOWN Deep Power Down is an operating mode to achieve maximum power reduction by eliminating the power of the whole memory array of the devices. Data will not be retained once the device enters Deep Power Down Mode. This mode is entered by havingall banks idle then / CS and /WE held low with /RAS and /CAS held high at the rising edge of the clock, while CKE is low. This mode is exited by asserting CKE high. PARTIAL ARRAY SELF REFRESH For further power savings during SELF REFRESH, the PASR feature allows the controller to select the amount of memory that will be refreshed during SELF REFRESH. The refresh options are Four Bank;all four banks, Two Bank;banks 0 and 1, One Bank;bank 0, Half Bank; bank 0 with row address MSB 0; Quarter Bank; bank 0 with row address 2 MSB's 0. WRITE and READ commands can still occur during standard operation, but only the selected banks will be refreshed during SELF REFRESH. Data in banks that are disabled will be lost. DRIVER STRENGTH Bits A5 and A6 of the extended mode register can be used to select the driver strength of the DQ outputs. This value should be set according to the applications requirements. Full drive strength is suitable to drive outputs on systems in which the SDRAM component is placed on a module. Full drive strength will drive loads up to 50pf. The half- and quarter-drive strengths can be used for point-to-point applications. Point-to-point systems are usually lightly loaded with a memory controller accessing one to eight SDRAM components on the memory bus with module stubs between these devices. Driver strength chosen should be load dependent. The lighter the load, the less driver strength that is needed for the outputs. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Commands Truth Table 1 provides a quick reference of available commands. This is followed by a written description of each command. Three additional Truth Tables appear following the Operation section; these tables provide current state/next state information. TRUTH TABLE 1 - COMMANDS AND DQM OPERATION (Notes: 1) NAME (FUNCTION) CS# RAS# CAS# WE# DQM ADDR DQs X X NOTES COMMAND INHIBIT (NOP) H X X X X NO OPERATION (NOP) L H H H X X X ACTIVE (Select bank and activate row) L L H H X Bank/Row X 3 H L/H8 Bank/Col X 4 Bank/Col Valid 4 READ (Select bank and column, and start READ burst) L H L WRITE (Select bank and column, and start WRITE burst) L H L L L/H8 DEEP POWER DOWN L H H L X X Active 9 PRECHARGE (Deactivate row in bank or banks) L L H L X Code X 5 AUTO REFRESH or SELF REFRESH (Enter self refresh mode) L L L H X X X 6, 7 LOAD MODE REGISTER L L L L X Op-Code X 2 Write Enable/Output Enable - - - - L - Active 8 Write Inhibit/Output High-Z - - - - H - High-Z 8 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. CKE is HIGH for all commands shown except SELF REFRESH. A0-A11 define the op-code written to the mode register, and A12 should be driven LOW. A0-A12 provide row address, and BA0, BA1 determine which bank is made active. A0-A8 (x16)provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which bank is being read from or written to. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are "Don't Care." This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. Internal refresh counter controls row addressing; all inputs and I/Os are "Don't Care" except for CKE. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay). Standard SDRAM parts assign this command sequence as Burst Terminate. For Bat Ram parts, the Burst Terminate command is assigned to the Deep Power Down function. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM COMMAND INHIBIT The COMMAND INHIBIT function prevents new commands from being executed by the SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively deselected. Operations already in progress are not affected. inputs A0-A8 (x16) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Input data appearing on the DQs is written to the memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. NO OPERATION (NOP) The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM which is selected (CS# is LOW). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as "Don't Care." Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. LOAD MODE REGISTER The mode register is loaded via inputs A0-A12 (A13 and A14 should be driven LOW to prevent Extended Mode Register.) See mode register heading in the Register Definition section. The LOAD MODE REGISTER command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. ACTIVE The ACTIVE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-A12 selects the row. This row remains active (or open) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. READ The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-A8 (x16) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Read data appears on the DQs subject to the logic level on the DQM inputs two clocks earlier. If a given DQM signal was registered HIGH, the corresponding DQs will be High-Z two clocks later; if the DQM signal was registered LOW, the DQs will provide valid data. AUTO PRECHARGE Auto precharge is a feature which performs the same individual-bank PRECHARGE function described above, without requiring an explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE command. A PRECHARGE of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst, except in the full-page burst mode, where AUTO PRECHARGE does not apply. Auto precharge is nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the Operation section of this data sheet. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on AUTO REFRESH AUTO REFRESH is used during normal operation of the SDRAM and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in conventional DRAMs. This 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM command is nonpersistent, so it must be issued each time a refresh is required. All active banks must be precharged prior to issuing an AUTO REFRESH command. The AUTO REFRESH command should not be issued until the minimum tRP has been met after the PRECHARGE command as shown in the operations section. The addressing is generated by the internal refresh controller. This makes the address bits "Don't Care" during an AUTO REFRESH command. The 256Mb SDRAM requires 8,192 AUTO REFRESH cycles every 64ms (tREF), regardless of width option. Providing a distributed AUTO REFRESH command every 7.81s will meet the refresh requirement and ensure that each row is refreshed. Alternatively, 8,192 AUTO REFRESH commands can be issued in a burst at the minimum cycle rate (tRC), once every 64ms. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is disabled (LOW). Once the SELF REFRESH command is registered, all the inputs to the SDRAM become "Don't Care" with the exception of CKE, which must remain LOW. Once self refresh mode is engaged, the SDRAM provides its own internal clocking, causing it to perform its own AUTO REFRESH cycles. The SDRAM must remain in self refresh mode for a minimum period equal to tRAS and may remain in self refresh mode for an indefinite period beyond that. The procedure for exiting self refresh requires a sequence of commands. First, CLK must be stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) prior to CKE going back HIGH. Once CKE is HIGH, the SDRAM must have NOP commands issued (a minimum of two clocks) for tXSR because time is required for the completion of any internal refresh in progress. Upon exiting the self refresh mode, AUTO REFRESH commands must be issued every 7.81s or less as both SELF REFRESH and AUTO REFRESH utilize the row refresh counter. SELF REFRESH The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the SDRAM retains data without external clocking. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Operation Figure 3 Activating a Specific Row in a Specific Bank BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be "opened." This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Figure 3). After opening a row (issuing an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered. For example, a tRCD specification of 20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to 3. This is reflected in Figure 4, which covers any case where 2 < tRCD (MIN)/tCK 3. (The same procedure is used to convert other specification limits from time units to clock cycles.) A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been "closed" (precharged). The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD. CLK CKE HIGH CS# RAS# CAS# WE# ROW ADDRESS A0-A12 BANK ADDRESS BA0, BA1 DON'T CARE Figure 4 Example: Meeting tRCD (MIN) When 2 < tRCD (MIN)/tCK < 3 T0 T1 T2 NOP NOP T3 T4 CLK COMMAND ACTIVE READ or WRITE tRCD DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM READs READ bursts are initiated with a READ command, as shown in Figure 5. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic READ commands used in the following illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CAS latency after the READ command. Each subsequent data-out element will be valid by the next positive clock edge. Figure 6 shows general timing for each possible CAS latency setting. Upon completion of a burst, assuming no other commands have been initiated, the DQs will go High-Z. A full-page burst will continue until terminated. (At the end of the page, it will wrap to the start address and continue.) Data from any READ burst may be truncated with a subsequent READ command, and data from a fixedlength READ burst may be immediately followed by data from a READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. Figure 5 READ Command Figure 6 CAS Latency CLK CKE HIGH CKE CLK COMMAND DECODE CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1 CS# MODE REGISTER REFRESH 13 COUNTER 12 ROWADDRESS MUX 13 13 BANK0 ROWADDRESS LATCH & DECODER RAS# 8192 BANK0 MEMORY ARRAY (8,192 x 256 x 32) 4 DQM0DQM3 SENSE AMPLIFIERS 32 8192 15 ADDRESS REGISTER 2 CAS# DATA OUTPUT REGISTER I/O GATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS 2 A0-A12, BA0, BA1 4 BANK CONTROL LOGIC 32 32 256 (x32) DQ0DQ31 DATA INPUT REGISTER COLUMN DECODER 8 COLUMNADDRESS COUNTER/ LATCH 8 WE# A0-A8: x16 COLUMN ADDRESS A9, A11: x16 ENABLE AUTO PRECHARGE A10 DISABLE AUTO PRECHARGE BA0,1 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 BANK ADDRESS 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM This is shown in Figure 7 for CAS latencies of two and three; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. The 256Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architecture. A READ command can be initiated on any clock cycle following a previous READ command. Fullspeed random read accesses can be performed to the same bank, as shown in Figure 8, or each subsequent READ may be performed to a different bank. Figure 7 Consecutive READ Bursts T0 T1 T2 T3 T4 T5 CLK COMMAND READ NOP NOP NOP READ NOP X = 0 cycles ADDRESS BANK, COL n BANK, COL b DOUT n DQ DOUT n+2 DOUT n+1 DOUT n+3 DOUT b CAS Latency = 1 T0 T1 T2 T3 T4 T5 T6 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP NOP READ NOP X = 1 cycle BANK, COL b DOUT n DQ DOUT n+2 DOUT n+1 DOUT n+3 DOUT b CAS Latency = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP READ NOP NOP NOP X = 2 cycles BANK, COL b DOUT n DQ DOUT n+1 DOUT n+2 DOUT n+3 DOUT b CAS Latency = 3 NOTE: Each READ command may be to either bank. DQM is LOW. DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Figure 8 Random READ Accesses T0 T1 T2 T3 T4 CLK COMMAND READ READ READ READ ADDRESS BANK, COL n BANK, COL a BANK, COL x BANK, COL m DOUT n DQ NOP DOUT x DOUT a DOUT m CAS Latency = 1 T0 T1 T2 T3 T4 T5 CLK COMMAND READ READ READ READ ADDRESS BANK, COL n BANK, COL a BANK, COL x BANK, COL m DOUT n DQ NOP NOP DOUT x DOUT a DOUT m CAS Latency = 2 T0 T1 T2 T3 T4 T5 T6 CLK COMMAND READ READ READ READ ADDRESS BANK, COL n BANK, COL a BANK, COL x BANK, COL m NOP DOUT a DOUT n DQ NOP DOUT x NOP DOUT m CAS Latency = 3 NOTE: Each READ command may be to either bank. DQM is LOW. DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM Data from any READ burst may be truncated with a subsequent WRITE command, and data from a fixedlength READ burst may be immediately followed by data from a WRITE command (subject to bus turnaround limitations). The WRITE burst may be initiated on the clock edge immediately following the last (or last desired) data element from the READ burst, provided that I/O contention can be avoided. In a given system design, there may be a possibility that the device driving the input data will go Low-Z before the SDRAM DQs go High-Z. In this case, at least a single-cycle delay should occur between the last read data and the WRITE command. The DQM input is used to avoid I/O contention, as shown in Figures 9 and 10. The DQM signal must be asserted (HIGH) at least two clocks prior to the WRITE command (DQM latency is two clocks for output buffers) to suppress data-out from the READ. Once the WRITE command is registered, the DQs will go High-Z (or remain High-Z), regardless of the state of the DQM signal; provided the DQM was active on the clock just prior to the WRITE command that truncated the READ command. If not, the second WRITE will be an invalid WRITE. For example, if DQM was LOW during T4 in Figure 10, then the WRITEs at T5 and T7 would be valid, while the WRITE at T6 would be invalid. The DQM signal must be de-asserted prior to the WRITE command (DQM latency is zero clocks for input buffers) to ensure that the written data is not masked. Figure 9 shows the case where the clock frequency allows for bus contention to be avoided without adding a NOP cycle, and Figure 10 shows the case where the additional NOP is needed. Figure 9 READ to WRITE Figure 10 READ to WRITE With Extra Clock Cycle T0 T1 T2 T3 T4 CLK T0 T1 T2 T3 T4 T5 CLK DQM DQM COMMAND READ ADDRESS BANK, COL n NOP NOP NOP WRITE BANK, COL b tCK tHZ DOUT n DQ COMMAND READ ADDRESS BANK, COL n DQ DIN b NOP NOP WRITE BANK, COL b DOUT n DIN b tDS DON'T CARE DON'T CARE A CAS latency of three is used for illustration. The READ command may be to any bank, and the WRITE command may be to any bank. If a burst of one is used, then DQM is not required. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 NOP tHZ tDS NOTE: NOP NOTE: 18 A CAS latency of three is used for illustration. The READ command may be to any bank, and the WRITE command may be to any bank. Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page burst may be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Figure 11 for each possible CAS latency; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the Figure 11 READ to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 CLK t RP COMMAND READ NOP NOP PRECHARGE NOP NOP NOP ACTIVE X = 0 cycles ADDRESS BANK (a or all) BANK a, COL n DOUT n+2 DOUT n+1 DOUT n DQ BANK a, ROW DOUT n+3 CAS Latency = 1 T0 T1 T2 T3 T4 T5 T6 T7 CLK t RP COMMAND READ NOP NOP PRECHARGE NOP NOP NOP ACTIVE X = 1 cycle ADDRESS BANK (a or all) BANK a, COL n DOUT n+2 DOUT n+1 DOUT n DQ BANK a, ROW DOUT n+3 CAS Latency = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK t RP COMMAND READ NOP NOP PRECHARGE NOP NOP NOP ACTIVE X = 2 cycles ADDRESS BANK (a or all) BANK a, COL n DOUT n DQ DOUT n+1 BANK a, ROW DOUT n+2 DOUT n+3 CAS Latency = 3 NOTE: DQM is LOW. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 DON'T CARE 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Full-page READ bursts can be truncated with the BURST TERMINATE command, and fixed-length READ bursts may be truncated with a BURST TERMINATE command, provided that auto precharge was not activated. The BURST TERMINATE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Figure 12 for each possible CAS latency; data element n + 3 is the last desired data element of a longer burst. Figure 12 Terminating a READ Burst T0 T1 T2 T3 T4 T5 T6 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP BURST TERMINATE NOP NOP X = 0 cycles DOUT n DQ DOUT n+2 DOUT n+1 DOUT n+3 CAS Latency = 1 T0 T1 T2 T3 T4 T5 T6 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP BURST TERMINATE NOP NOP X = 1 cycle DOUT n+2 DOUT n+1 DOUT n DQ DOUT n+3 CAS Latency = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND READ ADDRESS BANK, COL n NOP NOP NOP BURST TERMINATE NOP NOP NOP X = 2 cycles DOUT n DQ DOUT n+1 DOUT n+2 DOUT n+3 CAS Latency = 3 NOTE: DQM is LOW. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 DON'T CARE 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITEs WRITE bursts are initiated with a WRITE command, as shown in Figure 13. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic WRITE commands used in the following illustrations, auto precharge is disabled. During WRITE bursts, the first valid data-in element will be registered coincident with the WRITE command. Subsequent data elements will be registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have been initiated, the DQs will remain High-Z and any additional input data will be ignored (see Figure 14). A full-page burst will continue until terminated. (At the end of the page, it will wrap to the start address and continue.) Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixedlength WRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE command, and the data provided coincident with the new command applies to the new command. An ex- ample is shown in Figure 15. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. The 256Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architecture. A WRITE command can be initiated on any clock cycle following a previous WRITE command. Full-speed random write accesses within a page can be performed to the same bank, as shown in Figure 16, or each subsequent WRITE may be performed to a different bank. Figure 14 WRITE Burst T0 T1 T2 T3 COMMAND WRITE NOP NOP NOP ADDRESS BANK, COL n CLK DIN n+1 DIN n DQ Figure 13 WRITE Command Figure 15 WRITE to WRITE CLK CKE HIGH CS# T0 T1 T2 COMMAND WRITE NOP WRITE ADDRESS BANK, COL n CLK RAS# CAS# WE# A0-A8: x16 COLUMN ADDRESS DQ DIN n BANK, COL b DIN n+1 DIN b A9, A11: x16 DON'T CARE ENABLE AUTO PRECHARGE NOTE: DQM is LOW. Each WRITE command may be to any bank. A10 DISABLE AUTO PRECHARGE BA0,1 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 BANK ADDRESS 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM requires a tWR of at least one clock plus time, regardless of frequency. In addition, when truncating a WRITE burst, the DQM signal must be used to mask input data for the clock edge prior to, and the clock edge coincident with, the PRECHARGE command. An example is shown in Figure 18. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The precharge can be issued coincident with the first coincident clock edge (T2 in Figure 18) on an A1 Version and with the second clock on an A2 Version (Figure 18.) In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Data for any WRITE burst may be truncated with a subsequent READ command, and data for a fixedlength WRITE burst may be immediately followed by a READ command. Once the READ command is registered, the data inputs will be ignored, and WRITEs will not be executed. An example is shown in Figure 17. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. Data for a fixed-length WRITE burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page WRITE burst may be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued tWR after the clock edge at which the last desired input data element is registered. The auto precharge mode Figure 16 Random WRITE Cycles T0 T1 T2 T3 COMMAND WRITE WRITE WRITE WRITE ADDRESS BANK, COL n BANK, COL a BANK, COL x BANK, COL m CLK Figure 18 WRITE to PRECHARGE T0 T1 T2 T3 NOP PRECHARGE NOP T4 T5 T6 NOP ACTIVE NOP CLK DIN n DQ tWR @ tCLK 15ns DIN m DIN x DIN a DQM t RP DON'T CARE COMMAND NOTE: Each WRITE command may be to any bank. DQM is LOW. ADDRESS WRITE BANK (a or all) BANK a, COL n BANK a, ROW t WR Figure 17 WRITE to READ DQ DIN n DIN n+1 tWR = tCLK < 15ns T0 T1 T2 T3 T4 T5 DQM CLK t RP COMMAND COMMAND WRITE ADDRESS BANK, COL n NOP READ NOP NOP DIN n+1 NOP PRECHARGE BANK (a or all) BANK a, COL n BANK, COL b NOP ACTIVE BANK a, ROW t WR DQ DIN n NOP NOP ADDRESS DQ WRITE NOP DOUT b DIN n DIN n+1 DOUT b+1 DON'T CARE DON'T CARE NOTE: NOTE: DQM could remain LOW in this example if the WRITE burst is a fixed length of two. The WRITE command may be to any bank, and the READ command may be to any bank. DQM is LOW. CAS latency = 2 for illustration. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM PRECHARGE The PRECHARGE command (see Figure 20) is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as "Don't Care." Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW at that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is shown in Figure 19, where data n is the last desired data element of a longer burst. Figure 19 Terminating a WRITE Burst T0 T1 T2 CLK BURST TERMINATE NEXT COMMAND COMMAND WRITE ADDRESS BANK, COL n (ADDRESS) DIN n (DATA) DQ POWER-DOWN Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND INHIBIT when no accesses are in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. CKE must be held low during power down. The device may not remain in the power-down state longer than the refresh period (64ms) since no refresh operations are performed in this mode. The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE HIGH at the desired clock edge (meeting tCKS). See Figure 21. NOTE: DQMs are LOW. DON'T CARE Figure 20 PRECHARGE Command CLK CKE HIGH Figure 21 Power-Down CS# RAS# CLK CAS# CKE (( )) (( )) tCKS (( )) COMMAND WE# > tCKS (( )) (( )) NOP NOP All banks idle Input buffers gated off A0-A9, A11, A12 Enter power-down mode. Exit power-down mode. ACTIVE tRCD tRAS tRC DON'T CARE All Banks A10 Bank Selected BA0, BA1 BANK ADDRESS DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM DEEP POWER-DOWN Deep Power Down mode is a maximum power savings feature achieved by shutting off the power to the entire memory array of the device. Data will not be retained once Deep Power Down mode is executed. Deep Power Down mode is entered by having all banks idle then /CS and /WE held low with /RAS and /CAS high at the rising edge of the clock, while CKE is low.CKE must be held low during Deep Power Down. In order to exit Deep Power Down mode, CKE must be asserted high. After exiting, the following sequence is needed in order to enter a new command. Maintain NOP input conditions for a minimum of 200us. Issue PRECHARGE commands for all banks. Issue eight or more AUTOREFRESH commands. Issue a MODE REGISTER set command to initialize mode register. Issue a EXTENDED MODE REGISTER set command to initialize the extended mode register. See Figure 21A. CLOCK SUSPEND The clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, "freezing" the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or data present on the input pins at the time of a suspended internal clock edge is ignored; any data present on the DQ pins remains driven; and burst counters are not incremented, as long as the clock is suspended. (See examples in Figures 22 and 23.) Clock suspend mode is exited by registering CKE HIGH; the internal clock and related operation will resume on the subsequent positive clock edge. Figure 21A Deep Power-Down CLK CKE CS# RAS# CAS# WE# Figure 22 Clock Suspend During WRITE Burst (( )) (( )) T1 NOP WRITE T2 T3 T4 T5 NOP NOP DIN n+1 DIN n+2 CLK (( )) (( )) (( )) (( )) CKE (( )) (( )) INTERNAL CLOCK (( )) (( )) COMMAND (( )) (( )) ADDRESS Enter deep power-down mode. T0 Exit deep power-down mode. DIN BANK, COL n DIN n DON T CARE DON'T CARE NOTE: For this example, burst length = 4 or greater, and DM is LOW. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (M9 = 0). Figure 23 Clock Suspend During READ Burst T0 T1 T2 T3 T4 T5 T6 CLK CKE INTERNAL CLOCK COMMAND READ ADDRESS BANK, COL n DQ NOP NOP DOUT n NOP DOUT n+1 NOP DOUT n+2 NOP DOUT n+3 DON'T CARE NOTE: For this example, CAS latency = 2, burst length = 4 or greater, and DQM is LOW. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM CONCURRENT AUTO PRECHARGE An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. Micron SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE occurs are defined below. on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 24). 2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25). READ with Auto Precharge 1. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a READ Figure 24 READ With Auto Precharge Interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND BANK n Internal States READ - AP BANK n NOP Page Active READ - AP BANK m NOP READ with Burst of 4 NOP NOP NOP NOP Idle Interrupt Burst, Precharge tRP - BANK m t RP - BANK n Page Active BANK m BANK n, COL a ADDRESS Precharge READ with Burst of 4 BANK m, COL d DOUT a+1 DOUT a DQ DOUT d DOUT d+1 CAS Latency = 3 (BANK n) CAS Latency = 3 (BANK m) NOTE: DQM is LOW. DON'T CARE Figure 25 READ With Auto Precharge Interrupted by a WRITE T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND BANK n Internal States READ - AP BANK n Page Active NOP NOP NOP READ with Burst of 4 WRITE - AP BANK m NOP NOP Interrupt Burst, Precharge Idle tRP - BANK n Page Active BANK m ADDRESS NOP Write-Back WRITE with Burst of 4 BANK n, COL a t WR - BANK m BANK m, COL d 1 DQM DOUT a DQ DIN d DIN d+1 DIN d+2 DIN d+3 CAS Latency = 3 (BANK n) NOTE: 1. DQM is HIGH at T2 to prevent DOUT-a+1 from contending with DIN-d at T4. DON'T CARE 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 4. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m (Figure 27). Figure 26 WRITE With Auto Precharge Interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND BANK n Internal States NOP WRITE - AP BANK n Page Active READ - AP BANK m NOP WRITE with Burst of 4 DIN a DQ NOP Precharge tWR - BANK n tRP - BANK n NOP tRP - BANK m READ with Burst of 4 BANK n, COL a ADDRESS NOP Interrupt Burst, Write-Back Page Active BANK m NOP BANK m, COL d DOUT d+1 DOUT d DIN a+1 CAS Latency = 3 (BANK m) NOTE: 1. DQM is LOW. DON'T CARE Figure 27 WRITE With Auto Precharge Interrupted by a WRITE T0 T1 T2 T3 T4 T5 T6 T7 CLK COMMAND BANK n Internal States NOP WRITE - AP BANK n Page Active NOP NOP WRITE with Burst of 4 NOP Interrupt Burst, Write-Back tWR - BANK n BANK m ADDRESS DQ Page Active BANK n, COL a DIN a NOP NOP Precharge tRP - BANK n t WR - BANK m Write-Back WRITE with Burst of 4 BANK m, COL d DIN a+1 DIN a+2 NOTE: 1. DQM is LOW. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 WRITE - AP BANK m DIN d DIN d+1 DIN d+2 DIN d+3 DON'T CARE 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM TRUTH TABLE 2 - CKE (Notes: 1-4) CKEn-1 CKEn L L L H H L H H CURRENT STATE COMMANDn ACTIONn Power-Down X Maintain Power-Down Self Refresh X Maintain Self Refresh Clock Suspend X Maintain Clock Suspend Power-Down COMMAND INHIBIT or NOP Deep Power-Down X NOTES Exit Power-Down 5 Exit Deep Power-Down 8 Self Refresh COMMAND INHIBIT or NOP Exit Self Refresh 6 Clock Suspend X Exit Clock Suspend 7 All Banks Idle COMMAND INHIBIT or NOP Power-Down Entry All Banks Idle DEEP POWER DOWN All Banks Idle AUTO REFRESH Reading or Writing VALID Deep Power-Down Entry 8 Self Refresh Entry Clock Suspend Entry See Truth Table 3 NOTE: 1. 2. 3. 4. 5. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. Current state is the state of the SDRAM immediately prior to clock edge n. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. All states and sequences not shown are illegal or reserved. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n + 1 (provided that tCKS is met). 6. Exiting self refresh at clock edge n will put the device in the all banks idle state once tXSR is met. COMMAND INHIBIT or NOP commands should be issued on any clock edges occurring during the tXSR period. A minimum of two NOP commands must be provided during tXSR period. 7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock edge n + 1. 8. Deep Power-Down is a power savings feature of this Mobile SDRAM device. This command is Burst Terminate on traditional SDRAM components. For Bat Ram devices, this command sequence is assigned to Deep Power Down. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM TRUTH TABLE 3 - CURRENT STATE BANK n, COMMAND TO BANK n (Notes: 1-6; notes appear below and on next page) CURRENT STATE CS# RAS# CAS# WE# Any COMMAND (ACTION) NOTES H X X X COMMAND INHIBIT (NOP/Continue previous operation) L H H H NO OPERATION (NOP/Continue previous operation) L L H H ACTIVE (Select and activate row) L L L H AUTO REFRESH 7 L L L L LOAD MODE REGISTER 7 L L H L PRECHARGE 11 L H L H READ (Select column and start READ burst) 10 Row Active L H L L WRITE (Select column and start WRITE burst) 10 L L H L PRECHARGE (Deactivate row in bank or banks) 8 Read L H L H READ (Select column and start new READ burst) 10 (Auto L H L L WRITE (Select column and start WRITE burst) 10 Precharge L L H L PRECHARGE (Truncate READ burst, start PRECHARGE) 8 Disabled) L H H L DEEP POWER DOWN 9 Write L H L H READ (Select column and start READ burst) 10 (Auto L H L L WRITE (Select column and start new WRITE burst) 10 Precharge L L H L PRECHARGE (Truncate WRITE burst, start PRECHARGE) 8 Disabled) L H H L BURST TERMINATE 9 Idle NOTE: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. 4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to Truth Table 4. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in the idle state. Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be in the row active state. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM NOTE (continued): 5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRC is met, the SDRAM will be in the all banks idle state. Accessing Mode Register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. Once tMRD is met, the SDRAM will be in the all banks idle state. Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all banks will be in the idle state. 6. All states and sequences not shown are illegal or reserved. 7. Not bank-specific; requires that all banks are idle. 8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging. 9. Deep Power-Down is a power savings feature of this BAT-RAM device. This command is Burst Terminate on traditional SDRAM components. For Bat Ram devices, this command sequence is assigned to Deep Power Down. 10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 11. Does not affect the state of the bank and acts as a NOP to that bank. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 30 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM TRUTH TABLE 4 - CURRENT STATE BANK n, COMMAND TO BANK m (Notes: 1-6; notes appear on next page) CURRENT STATE CS# RAS# CAS# WE# Any Idle COMMAND (ACTION) NOTES H X X X COMMAND INHIBIT (NOP/Continue previous operation) L H H H NO OPERATION (NOP/Continue previous operation) X X X X Any Command Otherwise Allowed to Bank m Row L L H H ACTIVE (Select and activate row) Activating, L H L H READ (Select column and start READ burst) 7 Active, or L H L L WRITE (Select column and start WRITE burst) 7 Precharging L L H L PRECHARGE Read L L H H ACTIVE (Select and activate row) (Auto L H L H READ (Select column and start new READ burst) 7, 10 Precharge L H L L WRITE (Select column and start WRITE burst) 7, 11 Disabled) L L H L PRECHARGE Write L L H H ACTIVE (Select and activate row) 9 (Auto L H L H READ (Select column and start READ burst) 7, 12 Precharge L H L L WRITE (Select column and start new WRITE burst) 7, 13 Disabled) L L H L PRECHARGE Read L L H H ACTIVE (Select and activate row) (With Auto L H L H READ (Select column and start new READ burst) 7, 8, 14 Precharge) L H L L WRITE (Select column and start WRITE burst) 7, 8, 15 L L H L PRECHARGE Write L L H H ACTIVE (Select and activate row) (With Auto L H L H READ (Select column and start READ burst) 7, 8, 16 Precharge) L H L L WRITE (Select column and start new WRITE burst) 7, 8, 17 L L H L PRECHARGE 9 9 9 NOTE: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 31 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM NOTE: (continued) 4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle. 5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. All states and sequences not shown are illegal or reserved. 7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the auto precharge command when its burst has been interrupted by bank m's burst. 9. Burst in bank n continues as initiated. 10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later (Figure 7). 11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered (Figures 9 and 10). DQM should be used one clock prior to the WRITE command to prevent bus contention. 12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered (Figure 17), with the data-out appearing CAS latency later. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. 13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered (Figure 15). The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. 14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 24). 15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25). 16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to bank m (Figure 27). 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 32 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Voltage on VDD/VDDQ Supply Relative to VSS(2.5V) .......................... -0.5V to +3.6V Relative to VSS(1.8V) ....................... -0.35V to +2.8V Voltage on Inputs, NC or I/O Pins Relative to VSS(1.8V) ...................... -0.35V to +2.8V Operating Temperature, TA (industrial; IT parts) ..................... -40C to +85C Storage Temperature (plastic) ............ -55C to +150C Power Dissipation ........................................................ 1W DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - V version (Notes: 1, 5, 6; notes appear on page 37; VDD = 2.5 0.2V, VDDQ = +1.8V 0.15V ) PARAMETER/CONDITION SUPPLY VOLTAGE I/O SUPPLY VOLTAGE INPUT HIGH VOLTAGE: Logic 1; All inputs SYMBOL MIN MAX UNITS NOTES VDD 2.3 2.7 V VDDQ 1.65 1.95 V VIH 1.25 VDD + 0.3 V 22 22 INPUT LOW VOLTAGE: Logic 0; All inputs VIL -0.3 0.55 V DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs VOH VDDQ -0.2 - V DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs VOL - 0.2 V II -1.0 1.0 A IOZ -1.5 1.5 A INPUT LEAKAGE CURRENT: Any input 0V VIN VDD (All other pins not under test = 0V) OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V VOUT VDDQ DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - H version (Notes: 1, 5, 6; notes appear on page 37; VDD = 1.8 0.15V, VDDQ = +1.8V 0.15V ) PARAMETER/CONDITION SUPPLY VOLTAGE I/O SUPPLY VOLTAGE SYMBOL MIN MAX VDD 1.65 1.95 1.65 1.95 VDDQ INPUT HIGH VOLTAGE: Logic 1; All inputs VIH INPUT LOW VOLTAGE: Logic 0; All inputs VIL -0.3 DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs VOH VDDQ -0.2 DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs VOL INPUT LEAKAGE CURRENT: 0.8*VDDQ VDD + 0.3 UNITS NOTES V V V 22 0.3 V 22 - V - 0.2 V II -1.0 1.0 A IOZ -1.5 1.5 A Any input 0V VIN VDD (All other pins not under test = 0V) OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V VOUT VDDQ 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 33 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM CAPACITANCE (Note: 2; notes appear on page 37) PARAMETER SYMBOL MIN MAX UNITS NOTES Input Capacitance: CLK CI1 1.5 3.0 pF 29 Input Capacitance: All other input-only pins CI2 1.5 3.3 pF 30 Input/Output Capacitance: DQs CIO 3.0 5.0 pF 31 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Notes: 5, 6, 8, 9, 11; notes appear on page 37) AC CHARACTERISTICS PARAMETER Access time from CLK (pos. edge) Address hold time Address setup time CLK high-level width CLK low-level width Clock cycle time CKE hold time CKE setup time CS#, RAS#, CAS#, WE#, DQM hold time CS#, RAS#, CAS#, WE#, DQM setup time Data-in hold time Data-in setup time Data-out high-impedance time -8 CL = 3 CL = 2 CL = 1 CL = 3 CL = 2 CL = 1 CL = 3 CL = 2 CL = 1 Data-out low-impedance time Data-out hold time (load) Data-out hold time (no load) ACTIVE to PRECHARGE command ACTIVE to ACTIVE command period ACTIVE to READ or WRITE delay Refresh period (8,192 rows) AUTO REFRESH period PRECHARGE cmd period ACTIVE bank a to bank b command Transition time WRITE recovery time tXSR Exit SELF REFRESH to ACTIVE command 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 SYMBOL tAC(3) tAC(2) tAC(1) tAH tAS tCH tCL tCK(3) tCK(2) tCK(1) tCKH tCKS tCMH tCMS tDH tDS tHZ(3) tHZ(2) tHZ(1) tLZ tOH tOH N tRAS tRC tRCD tREF tRFC tRP tRRD tT tWR 34 MIN -10 MAX 7 8 19 1 2.5 3 3 8 10 20 1 2.5 1 2.5 1 2.5 MIN 1 2.5 3 3 10 12 25 1 2.5 1 2.5 1 2.5 7 8 19 1 2.5 1.8 48 80 20 120,000 1 2.5 1.8 50 100 20 64 80 20 20 0.5 1CLK+ 7ns 15 80 1.2 100 20 20 0.5 1CLK+ 5ns 15 100 MAX 7 8 22 UNITS NOTES ns 27 ns ns ns ns ns D ns D ns 23 ns 23 ns ns ns ns ns ns ns 7 ns 10 8 ns 10 22 ns ns ns ns 28 120,000 ns D ns D,E ns D 64 ms ns D,E ns D ns 1.2 ns 7 ns 24 D,E 25,D ns E Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM AC FUNCTIONAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 11; notes appear on page 37) PARAMETER SYMBOL -8 -10 READ/WRITE command to READ/WRITE command tCCD 1 1 tCK 17 CKE to clock disable or power-down entry mode tCKED 1 1 tCK 14 CKE to clock enable or power-down exit setup mode tPED 1 1 tCK 14 DQM to input data delay tDQD 0 0 tCK 17 DQM to data mask during WRITEs tDQM 0 0 tCK 17 DQM to data high-impedance during READs tDQZ 2 2 tCK 17 WRITE command to input data delay tDWD 0 0 tCK 17 Data-in to ACTIVE command tDAL 5 5 tCK 15, 21 Data-in to PRECHARGE command tDPL 2 2 tCK 16, 21 Last data-in to burst STOP command tBDL 1 1 tCK 17 Last data-in to new READ/WRITE command tCDL 1 1 tCK 17 Last data-in to PRECHARGE command tRDL 2 2 tCK 16, 21 tMRD 2 2 tCK 26 17 LOAD MODE REGISTER command to ACTIVE or REFRESH command Data-out to high-impedance from PRECHARGE command 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 35 UNITS NOTES CL = 3 tROH(3) 3 3 tCK CL = 2 tROH(2) 2 2 tCK 17 CL = 1 tROH(1) 1 1 tCK 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM IDD SPECIFICATIONS AND CONDITIONS (Notes: 1, 5, 6, 11, 13; notes appear on page 37;VDD = 2.5 0.2V or +1.8V 0.15V, VDDQ = +1.8V 0.15V ) PARAMETER/CONDITION SYMBOL MAX -8 - 1 0 U N I T S NOTES OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE; tRC = tRC (MIN) IDD1 78 75 mA 19, 32 3, 18, STANDBY CURRENT: Power-Down Mode; All banks idle; CKE = LOW IDD2 350 350 A 32 STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress IDD3 25 25 mA 3, 12, 19, 32 OPERATING CURRENT: Burst Mode; Continuous burst; READ or WRITE; All banks active IDD4 90 80 mA 3, 18, 19, 32 3, 12, 18, 19, 32, 33 AUTO REFRESH CURRENT CKE = HIGH; CS# = HIGH tRFC = tRFC (MIN) IDD5 160 150 mA tRFC = 7.8s IDD6 2.5 2.5 mA IDD8 10 10 A DEEP POWER DOWN IDD7 - SELF REFRESH CURRENT OPTIONS (Temperature Compensated Self Refresh) (Notes: 1, 6, 11, 13; notes appear on page 37) VDD = 2.5 0.2V or +1.8V 0.15V, VDDQ = +1.8V 0.15V Temperature Compensated Self Refresh Max Parameter/Condition Temperature -8 -10 UNITS NOTES Self Refresh 85C 600 600 A 4 Current: 70C 350 350 A 4 CKE < 0.2V 45C 200 200 A 4 15C 160 160 A 4 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM NOTES 1. 2. 3. 4. 5. 6. 7. 8. 9. All voltages referenced to VSS. This parameter is sampled; f = 1 MHz, TJ = 25C; 0.9V bias, 200mV swing, VDD = +2.5V, VDDQ = +1.8V. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. Enables on-chip refresh and address counters. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range (0C TA +70C and - 40C TA +85C for IT parts) is ensured. An initial pause of 100s is required after powerup, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. AC characteristics assume tT = 1ns. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. Outputs measured at 0.9V with equivalent load: 17. Required clocks are specified by JEDEC functionality and are not dependent on any timing parameter. 18. The IDD current will increase or decrease proportionally according to the amount of frequency alteration for the test condition. 19. Address transitions average one transition every two clocks. 20. CLK must be toggled a minimum of two times during this period. 21. Based on tCK = 7.5ns for -75, tCK=8ns for -8, tCK=10ns for -10 . 22. VIH overshoot: VIH (MAX) = VDDQ + 2V for a pulse width 3ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width 1/3 tCK. 23. The clock frequency must remain constant (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) during access or precharge states (READ, WRITE, including tWR, and PRECHARGE commands). CKE may be used to reduce the data rate. 24. Auto precharge mode only. The precharge timing budget (tRP) begins 7.5ns after the first clock delay, after the last WRITE is executed. May not exceed limit set for precharge mode. 25. Precharge mode only. 26. JEDEC and PC100 specify three clocks. 27. tAC for -75 at CL = 3 with no load is 5.4ns and is guaranteed by design. 28. Parameter guaranteed by design. A. Maximum capacitance can be 3.0 pF but not desired. B. Maximum capacitance can be 5.0pF but not desired. C. Maximum capacitance can be 3.3pF but not desired. D. Target values listed with alternative values in parantheses. E. tRFC must be less than or equal to tRC+1CLK tXSR must be less than or equal to tRC+1CLK F. For full I/V relationships see IBIS Section. 29. PC100 specifies a maximum of 4pF. 30. PC100 specifies a maximum of 5pF. 31. PC100 specifies a maximum of 6.5pF. 32. For -75, CL = 3 and tCK = 7.5ns; for -8, CL = 2 and tCK = 10ns. 33. CKE is HIGH during refresh command period tRFC (MIN) else CKE is LOW. The IDD6 limit is actually a nominal value and does not result in a fail value. Q 30pF 10. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. The last valid data element will meet tOH before going High-Z. 11. AC timing and IDD tests have VIL = 0.0V and VIH 1.65V, with timing referenced to VIH/2 crossover point. If the input transition time is longer than 1 ns, then the timing is referenced at VIL (MAX) and VIH (MIN) and no longer at the ISV crossover point. 12. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid VIH or VIL levels. 13. IDD specifications are tested after the device is properly initialized. 14. Timing actually specified by tCKS; clock(s) specified as a reference only at minimum cycle rate. 15. Timing actually specified by tWR plus tRP; clock(s) specified as a reference only at minimum cycle rate. 16. Timing actually specified by tWR. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 37 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM INITIALIZE AND LOAD MODE REGISTER T1 T0 T3 T5 CLK (( )) (( )) CKE (( )) (( )) COMMAND6 (( )) (( )) DQML/U (x16) (( )) (( )) (( )) (( )) A0-A9, A11, A12 (( )) (( )) (( )) (( )) CODE (( )) (( )) A10 (( )) (( )) (( )) (( )) CODE (( )) (( )) T7 T9 T19 T29 (( )) (( tCK ) ) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tCKS tCKH tCMH tCMS NOP (( )) (( )) PRE (( )) (( )) LMR4 (( )) (( )) LMR4 (( )) (( )) PRE3 (( )) (( )) (( )) (( )) AR4 AR4 (( )) (( )) ACT4 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) CODE (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) RA CODE ( ( ALL BANKS )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) RA (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) BA (( )) (( )) tAS tAH BA0, BA1 (( )) (( )) DQ (( )) ALL BANKS tAS tAH tAS (( )) (( )) High-Z tAH tAS (( )) (( )) BA0 = L, BA1 = H BA0 = L, BA1 = L tAH (( )) (( )) (( )) (( )) tRP tMRD tMRD tRP T = 100s Power-up: VDD and CK stable Load Extended Mode Register tRFC tRFC Load Mode Register DON'T CARE NOTE: 1. The two AUTO REFRESH commands at T9 and T19 may be applied before either LOAD MODE REGISTER (LMR) command. 2. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH command, ACT = ACTIVE command, RA = Row Address, BA = Bank Address 3. Optional refresh command. 4. The Load Mode Register for both MR/EMR and 2 Auto Refresh commands can be in any order. However, all must occur prior to an Active command. 5. Device timing is -10 with 100MHz clock. TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) MIN MAX MIN -10 MAX -8 UNITS SYMBOL* 1 2.5 3 1 2.5 3 ns ns ns tCKH 3 8 3 10 ns ns tCMS 10 20 12 25 ns ns tRFC tCKS tCMH tMRD3 tRP MIN MAX MIN -10 MAX UNITS 1 2.5 1 1 2.5 1 ns ns ns 2.5 2 2.5 2 tCK 80 20 100 20 ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 38 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM POWER-DOWN MODE 1 T0 T1 T2 tCK CLK tCKS tCH CKE tCKS Tn + 2 tCKS (( )) tCKH tCMS tCMH COMMAND Tn + 1 (( )) (( )) tCL PRECHARGE NOP (( )) (( )) NOP NOP ACTIVE DQM/ DQML, DQMU (( )) (( )) A0-A9, A11, A12 (( )) (( )) ROW (( )) (( )) ROW (( )) (( )) BANK ALL BANKS A10 SINGLE BANK tAS BA0, BA1 tAH BANK(S) High-Z (( )) DQ Two clock cycles Input buffers gated off while in power-down mode Precharge all active banks All banks idle All banks idle, enter power-down mode Exit power-down mode DON'T CARE NOTE: 1. Violating refresh requirements during power-down may result in a loss of data. TIMING PARAMETERS -8 SYMBOL* tAH MIN MAX MIN -10 MAX -8 UNITS SYMBOL* 1 2.5 3 1 2.5 3 ns ns ns tCK (1) 3 10 ns ns tCMH tCK (3) 3 8 tCK (2) 10 12 ns tAS tCH tCL tCKH tCKS tCMS MIN MAX MIN -10 MAX UNITS 20 1 2.5 25 1 2.5 ns ns ns 1 2.5 1 2.5 ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 39 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM CLOCK SUSPEND MODE 1 T0 T1 T2 tCK CLK T3 T4 T5 T6 T7 T8 NOP WRITE T9 tCL tCH tCKS tCKH CKE tCKS tCKH tCMS tCMH COMMAND READ NOP NOP NOP NOP NOP tCMS tCMH DQM/ DQML, DQMU A0-A9, A11, A12 tAS tAH COLUMN m 2 tAS tAH tAS tAH COLUMN e 2 A10 BA0, BA1 BANK BANK tAC tOH tAC DQ tHZ DOUT m tLZ DOUT m + 1 tDS tDH DOUT e DOUT + 1 DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 2, the CAS latency = 3, and auto precharge is disabled. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* MIN tAC (3) tAC (2) tAC (1) MAX MIN -10 MAX -8 SYMBOL* UNITS 7 8 7 8 ns ns tCKH 19 22 tCMH 2.5 1 2.5 1 ns ns 2.5 3 3 ns ns tDS 8 10 10 12 ns ns tHZ (2) tCK (2) tCK (1) 20 25 ns tLZ tCK (3) UNITS tDH 3 3 tCL MAX ns ns ns tCKS 1 2.5 tCH MIN 1 2.5 1 1 2.5 tAS -10 MAX 1 2.5 1 ns ns ns tAH MIN tCMS tHZ (3) tHZ (1) tOH 2.5 7 8 7 8 19 22 ns ns ns 1 1 ns ns 2.5 2.5 ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 40 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM AUTO REFRESH MODE 1 T0 CLK T1 T2 tCK (( )) (( )) tCH tCKS tCKH tCMS tCMH COMMAND PRECHARGE AUTO REFRESH NOP NOP (( )) ( ( NOP )) (( )) AUTO REFRESH NOP (( )) (( )) DQM / DQML, DQMU A0-A9, A11, A12 ALL BANKS A10 SINGLE BANK tAS BA0, BA1 To + 1 (( )) (( )) (( )) CKE DQ Tn + 1 tCL (( )) ( ( NOP )) ACTIVE (( )) (( )) (( )) (( )) (( )) (( )) ROW (( )) (( )) (( )) (( )) ROW tAH BANK(S) High-Z tRP (( )) (( )) (( )) (( )) (( )) (( )) tRFC BANK tRFC Precharge all active banks DON'T CARE NOTE: 1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not required. TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) MIN 1 MAX MIN 1 -10 MAX -8 UNITS ns SYMBOL* tCK (1) 2.5 3 2.5 3 ns ns tCKH 3 8 10 3 10 12 ns ns ns tCMH MIN 20 -10 MAX MIN 25 MAX UNITS ns 1 2.5 1 1 2.5 1 ns ns ns tRFC 2.5 80 2.5 100 ns ns tRP 20 20 ns tCKS tCMS *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 41 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM SELF REFRESH MODE T0 CLK T1 tCK tCL tCH T2 tCKS > tRAS CKE tCKS tCKH tCMS tCMH COMMAND Tn + 1 (( )) (( )) (( )) (( )) (( )) PRECHARGE AUTO REFRESH NOP (( )) (( )) (( )) (( )) A0-A12 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) SINGLE BANK BA0, BA1 DQ AUTO REFRESH )) (( )) (( )) tAS tCKS (( )) (( )) (( )) ALL BANKS To + 2 NOP ( ( DQM/ DQML, DQMH A10 To + 1 tAH BANK(S) High-Z tRP Precharge all active banks tXSR Enter self refresh mode Exit self refresh mode (Restart refresh time base) DON'T CARE CLK stable prior to exiting self refresh mode TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) MIN MAX MIN -10 MAX -8 UNITS SYMBOL* 1 2.5 3 1 2.5 3 ns ns ns tCKH 3 8 3 10 ns ns tCMS 10 20 12 25 ns ns tRP tCKS tCMH tRAS tXSR MIN MAX 1 2.5 1 2.5 48 20 80 MIN -10 MAX 1 2.5 1 120,000 2.5 50 20 100 UNITS ns ns ns 120,000 ns ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 42 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM READ - WITHOUT AUTO PRECHARGE 1 T0 T1 T2 tCK CLK T3 T4 T5 NOP NOP T6 T7 T8 NOP ACTIVE tCL tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP READ tCMS NOP PRECHARGE tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH tAS ROW tAH ALL BANKS ROW A10 tAS BA0, BA1 COLUMN m 2 ROW ROW SINGLE BANK DISABLE AUTO PRECHARGE tAH BANK BANK BANK tAC tOH tAC DQ DOUT m tLZ tRCD tAC tOH DOUT m + 1 BANK tAC tOH tOH DOUT m + 2 DOUT m + 3 tHZ tRP CAS Latency tRAS tRC DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a "manual" PRECHARGE. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAC (3) tAC (2) tAC MIN -10 MAX 7 8 MIN -8 MAX 7 8 UNITS ns ns 22 SYMBOL* tCMH tCMS 1 1 ns ns tHZ (3) tAH tAS 2.5 3 3 2.5 3 3 ns ns ns tHZ (1) 8 10 10 12 ns ns tRAS 20 1 25 1 ns ns tRCD tCKH tCKS 2.5 2.5 ns (1) tCH tCL tCK (3) tCK (2) tCK (1) 19 MIN 1 2.5 tOH tRC tRP MIN 1 2.5 7 8 tHZ (2) tLZ -10 MAX 19 1 2.5 48 80 20 20 MAX UNITS ns ns 7 8 ns ns 22 ns ns ns 120,000 ns ns 1 2.5 120,000 50 100 20 20 ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 43 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM READ - WITH AUTO PRECHARGE 1 T0 T1 T2 tCK CLK tCKS T3 T4 T5 NOP NOP T6 T7 T8 NOP ACTIVE tCL tCH tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ tCMS NOP NOP tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH ROW ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 COLUMN m 2 ROW tAS A10 tAH ROW tAH BANK BANK BANK tAC tOH tAC DQ DOUT m tLZ tRCD tAC tOH DOUT m + 1 tAC tOH tOH DOUT m + 2 DOUT m + 3 tHZ tRP CAS Latency tRAS tRC DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAC (3) tAC tAC MIN (2) (1) tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS MAX 7 MIN 8 19 -10 MAX 7 8 22 -8 UNITS ns SYMBOL* tCMH MIN 1 MAX MIN 1 -10 MAX ns ns tCMS tHZ (3) 7 7 8 19 8 22 2.5 2.5 UNITS ns ns ns 1 2.5 3 1 2.5 3 ns ns ns tHZ (2) 3 8 3 10 ns ns tOH 10 20 12 25 ns ns tRC tRCD 80 20 70 20 ns ns 1 2.5 1 2.5 ns ns tRP 20 20 ns tHZ (1) tLZ tRAS 1 1 2.5 48 2.5 50 120,000 120,000 ns ns ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 44 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM SINGLE READ - WITHOUT AUTO PRECHARGE 1 T0 T1 T2 tCK CLK T3 T4 T5 NOP 2 NOP 2 T6 T7 T8 tCL tCH tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ PRECHARGE ACTIVE NOP NOP tCMS tCMH DQM / DQML, DQMU tAS A0-A9, A11,A12 tAH COLUMN m3 ROW tAS ROW tAH ALL BANKS ROW A10 tAS BA0, BA1 ROW DISABLE AUTO PRECHARGE tAH BANK SINGLE BANKS BANK tOH tAC DQ tLZ tRCD BANK BANK(S) DOUT m tHZ tRP CAS Latency tRAS tRC DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 1, the CAS latency = 2, and the READ burst is followed by a "manual" PRECHARGE. 2. PRECHARGE command not allowed else tRAS would be violated. 3. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAC (3) tAC tAC MIN (2) (1) tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS MAX 7 MIN 8 19 -10 MAX 7 8 22 -8 UNITS ns SYMBOL* tCMH MIN 1 MAX MIN 1 -10 MAX ns ns tCMS tHZ (3) 7 7 8 19 8 22 1 2.5 3 1 2.5 3 ns ns ns tHZ (2) 3 8 3 10 ns ns tOH 10 20 12 25 ns ns tRC 1 2.5 1 2.5 ns ns tRP 2.5 tHZ (1) tLZ tRAS tRCD 2.5 1 1 2.5 48 2.5 50 80 20 20 120,000 100 20 20 120,000 UNITS ns ns ns ns ns ns ns ns ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 45 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM SINGLE READ - WITH AUTO PRECHARGE 1 T0 T1 T2 tCK CLK tCKS T3 T4 T5 T6 READ NOP T7 T8 tCL tCH tCKH CKE tCMS tCMH COMMAND ACTIVE NOP2 NOP NOP2 tCMS NOP ACTIVE NOP tCMH DQM / DQML, DQMU tAS A0-A9, A11 tAH COLUMN m3 ROW tAS tAH ROW ENABLE AUTO PRECHARGE ROW A10 tAS BA0, BA1 ROW tAH BANK BANK BANK tAC t OH DOUT m DQ tRCD CAS Latency tHZ tRP tRAS tRC DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 1, and the CAS latency = 2. 2. READ command not allowed else tRAS would be violated since AUTO PRECHARGE is enabled. 3. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* MIN tAC (3) tAC (2) tAC (1) tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS MAX MIN 7 8 19 -10 MAX 7 8 22 -8 UNITS SYMBOL* ns ns ns tCMH MIN MAX -10 MAX tHZ (3) 7 7 1 2.5 1 2.5 ns ns tHZ (2) 8 19 8 22 ns ns 3 3 8 3 3 10 ns ns ns tLZ 120,000 ns ns ns 10 20 12 25 ns ns tRC 1 2.5 1 2.5 ns ns tHZ (1) tOH tRAS 1 2.5 48 1 2.5 UNITS ns ns ns tCMS 1 2.5 MIN 120,000 1 2.5 50 tRCD 80 20 100 20 ns ns tRP 20 20 ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 46 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM ALTERNATING BANK READ ACCESSES 1 T0 T1 T2 tCK CLK T3 T4 T5 NOP ACTIVE T6 T7 T8 READ NOP ACTIVE tCL tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP READ tCMS NOP tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAS A10 COLUMN m 2 tAH COLUMN b 2 ROW ENABLE AUTO PRECHARGE ROW ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 tAH ROW ROW ROW tAH BANK 0 BANK 0 BANK 3 tAC tOH tAC DQ DOUT m tLZ tRCD - BANK 0 BANK 3 tAC tOH DOUT m + 1 BANK 0 tAC tOH tAC tOH DOUT m + 2 tAC tOH DOUT m + 3 DOUT b tRP - BANK 0 CAS Latency - BANK 0 tRCD - BANK 0 tRAS - BANK 0 tRC - BANK 0 tRCD - BANK 1 tRRD CAS Latency - BANK 1 DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* MIN tAC (3) tAC (2) tAC (1) tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH MAX MIN -10 MAX -8 UNITS SYMBOL* tCKS 7 8 7 8 ns ns 19 22 tCMS tCMH 1 2.5 1 2.5 ns ns ns 3 3 3 3 ns ns tRAS 8 10 20 10 12 25 ns ns ns tRCD 1 1 ns tLZ tOH tRC tRP tRRD MIN 2.5 MAX MIN 2.5 -10 MAX UNITS ns 1 2.5 1 2.5 ns ns 1 2.5 48 1 2.5 50 ns ns ns 120,000 120,000 80 20 100 20 ns ns 20 20 20 20 ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 47 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM READ - FULL-PAGE BURST 1 T0 T1 T2 tCL CLK T3 T4 T5 T6 (( )) (( )) tCK tCH tCKS tCMH ACTIVE NOP READ tCMS NOP NOP NOP NOP tCMH tAS tAH tAH NOP BURST TERM NOP NOP (( )) (( )) ROW tAS (( )) (( )) (( )) (( )) COLUMN m 2 ROW tAS BA0, BA1 Tn + 4 (( )) (( )) DQM/ DQML, DQMH A10 Tn + 3 (( )) (( )) tCMS A0-A9, A11, A12 Tn + 2 tCKH CKE COMMAND Tn + 1 tAH BANK (( )) (( )) BANK tAC tAC tAC tOH DOUT m DQ DOUT m+1 tLZ tRCD tAC ( ( tOH ) ) tOH DOUT (( )) m+2 (( )) tAC tAC tOH tOH tOH DOUT m-1 Dout m DOUT m+1 tHZ 512 (x16) locations within same row 1,024 (x8) locations within same row 2,048 (x4) locations within same row CAS Latency Full page completed DON'T CARE Full-page burst does not self-terminate. 3 Can use BURST TERMINATE command. UNDEFINED NOTE: 1. For this example, the CAS latency = 2. 2. x16: A9, A11 and A12 = "Don't Care" 3. Page left open; no tRP. TIMING PARAMETERS -8 SYMBOL* tAC (3) tAC (2) tAC MIN -10 MAX 7 8 MIN -8 MAX 7 8 UNITS ns ns 22 SYMBOL* tCKH tCKS MIN 1 2.5 -10 MAX MIN 1 2.5 MAX UNITS ns ns 1 1 ns ns tCMH tAH tAS 2.5 3 3 2.5 3 3 ns ns ns tHZ (3) 8 10 10 12 ns ns tLZ tCK (2) tOH 1 2.5 1 2.5 ns ns tCK (1) 20 25 ns tRCD 20 20 ns (1) tCH tCL tCK (3) 19 tCMS 1 2.5 1 2.5 7 8 19 tHZ (2) tHZ (1) ns ns 7 8 22 ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 48 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM READ - DQM OPERATION 1 T0 T1 T2 tCK CLK tCKS tCKH tCMS tCMH T3 T4 T5 NOP NOP T6 T7 T8 NOP NOP NOP tCL tCH CKE COMMAND ACTIVE NOP READ tCMS NOP tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH A10 tAH ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 COLUMN m 2 ROW tAS DISABLE AUTO PRECHARGE tAH BANK BANK tAC DQ tOH DOUT m tLZ tRCD tAC tHZ tAC tOH tOH DOUT m + 2 DOUT m + 3 tLZ tHZ CAS Latency DON'T CARE UNDEFINED NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* MIN tAC (3) tAC (2) tAC tAS tCH tCL tCK (3) tCK (2) tCK (1) MIN 7 8 -10 MAX -8 UNITS SYMBOL* 7 8 ns ns tCKH 22 tCKS MIN MAX MIN -10 MAX UNITS 1 2.5 1 2.5 ns ns 1 2.5 1 2.5 1 2.5 ns ns ns tCMH 1 2.5 tHZ (3) 7 7 ns ns ns 3 3 3 3 ns ns tHZ (2) 8 19 8 22 ns ns 8 10 20 10 12 25 ns ns ns tLZ (1) tAH MAX 19 tCMS tHZ (1) tOH tRCD 1 2.5 20 1 2.5 20 ns ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 49 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITE - WITHOUT AUTO PRECHARGE 1 T0 tCK CLK T1 T2 tCL T3 T4 T5 T6 NOP NOP NOP NOP T7 T8 T9 tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP WRITE NOP PRECHARGE ACTIVE tCMS tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 ROW tAH ALL BANKs ROW tAS BA0, BA1 COLUMN m 2 ROW tAS A10 tAH ROW tAH DISABLE AUTO PRECHARGE SINGLE BANK BANK BANK BANK tDS tDH DIN m DQ tDS tDH tDS DIN m + 1 tDH DIN m + 2 tDS BANK tDH DIN m + 3 t WR 3 tRCD tRAS tRP tRC DON'T CARE NOTE: 1. For this example, the burst length = 4, and the WRITE burst is followed by a "manual" PRECHARGE. 2. x16: A9, A11 and A12 = "Don't Care" 3. 14ns to 15ns is required between <DIN m> and the PRECHARGE command, regardless of frequency. TIMING PARAMETERS -8 SYMBOL* tAH MAX 1 MIN -10 MAX UNITS 1 -8 SYMBOL* ns tCMH 2.5 3 2.5 3 ns ns tCMS 3 8 10 3 10 12 ns ns ns tDS 25 1 ns ns tRCD tCKH 20 1 tCKS 2.5 2.5 ns tAS tCH tCL tCK (3) tCK (2) tCK (1) tDH tRAS tRC MIN MAX 1 2.5 1 2.5 48 MIN -10 MAX 1 2.5 1 120,000 2.5 50 UNITS ns ns ns 120,000 ns ns tRP 80 20 20 100 20 20 ns ns ns tWR 15 15 ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 50 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITE - WITH AUTO PRECHARGE 1 T0 tCK CLK tCKS tCKH tCMS tCMH T1 T2 tCL T3 T4 T5 T6 T7 T8 T9 NOP NOP NOP NOP NOP NOP ACTIVE tCH CKE COMMAND ACTIVE NOP WRITE tCMS tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH ROW ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 COLUMN m 2 ROW tAS A10 tAH ROW tAH BANK BANK tDS BANK tDH tDS DIN m DQ tDH tDS DIN m + 1 tDH DIN m + 2 tDS tDH DIN m + 3 tRCD tRAS tRP tWR tRC DON'T CARE NOTE: 1. For this example, the burst length = 4. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS tCMH MIN 1 2.5 -10 MAX MIN 1 2.5 MAX -8 UNITS ns ns SYMBOL* tCMS tDH 3 3 3 3 ns ns tDS 8 10 20 10 12 25 ns ns ns tRC 1 2.5 1 2.5 ns ns tWR 1 1 ns tRAS tRCD tRP MIN 2.5 1 2.5 48 -10 MAX 120,000 MIN 2.5 1 2.5 50 MAX 120,000 UNITS ns ns ns ns 80 20 20 100 20 20 ns ns ns 1 CLK + 7ns 1 CLK + 5ns - *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 51 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM SINGLE WRITE - WITHOUT AUTO PRECHARGE 1 T0 tCK CLK T1 T2 tCL T3 T4 NOP 2 NOP 2 T5 T6 T7 T8 ACTIVE NOP tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP WRITE PRECHARGE NOP tCMS tCMH DQM / DQML, DQMU tAS A0-A9, A11 tAH ALL BANKS ROW tAS BA0, BA1 COLUMN m 3 ROW tAS A10 tAH ROW tAH DISABLE AUTO PRECHARGE SINGLE BANK BANK BANK BANK tDS BANK tDH DIN m DQ tRCD tRAS tRP t WR 4 tRC DON'T CARE NOTE: 1. 2. 3. 4. For this example, the burst length = 1, and the WRITE burst is followed by a "manual" PRECHARGE. PRECHARGE command not allowed else tRAS would be violated. x16: A9, A11 and A12 = "Don't Care" 14ns to 15ns is required between <DIN m> and the PRECHARGE command, regardless of frequency. With a single write t WR has been increased to meet minimum tRAS requirement. TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS MIN MAX MIN -10 MAX -8 SYMBOL* UNITS 1 2.5 1 2.5 ns ns tCMH 3 3 8 3 3 10 ns ns ns tDH 10 20 12 25 ns ns tRC 1 2.5 1 2.5 ns ns tCMS tDS tRAS MIN MAX 1 2.5 1 2.5 48 MIN -10 MAX 1 2.5 1 120,000 2.5 50 UNITS ns ns ns 120,000 ns ns tRP 80 20 20 100 20 20 ns ns ns tWR 15 15 ns tRCD *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 52 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM SINGLE WRITE - WITH AUTO PRECHARGE 1 T0 tCK CK tCKS tCKH tCMS tCMH T1 T2 tCL T3 T4 T5 T6 T7 NOP2 WRITE NOP NOP NOP T8 T9 tCH CKE COMMAND NOP2 ACTIVE NOP2 tCMS NOP ACTIVE tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH ROW ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 COLUMN m 3 ROW tAS A10 tAH ROW tAH BANK BANK tDS BANK tDH DIN m DQ tRCD tRAS tRP tWR4 tRC DON'T CARE NOTE: 1. 2. 3. 4. For this example, the burst length = 1. Requires one clock plus time (5ns to 7ns) with auto precharge or 14ns to 15ns with PRECHARGE. x16: A9, A11 and A12 = "Don't Care" WRITE command not allowed else tRAS would be violated. TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS tCMH MIN -10 MAX MIN MAX -8 UNITS SYMBOL* 1 2.5 3 3 1 2.5 3 3 ns ns ns ns tCMS 8 10 10 12 ns ns tRC 20 1 2.5 25 1 2.5 ns ns ns tRP 1 1 ns tDH tDS tRAS tRCD tWR MIN 2.5 1 2.5 48 -10 MAX MIN 120,000 2.5 1 2.5 50 MAX UNITS 120,000 ns ns ns ns 80 20 100 20 ns ns 20 1 CLK + 7ns 20 1 CLK + 5ns ns - *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 53 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM ALTERNATING BANK WRITE ACCESSES 1 T0 tCK CLK T1 T2 tCL T3 T4 T5 T6 T7 T8 T9 NOP NOP ACTIVE tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP WRITE tCMS NOP ACTIVE NOP WRITE tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH COLUMN b 3 ROW ENABLE AUTO PRECHARGE ROW ENABLE AUTO PRECHARGE ROW tAS BA0, BA1 COLUMN m 3 ROW tAS A10 tAH ROW ROW tAH BANK 0 BANK 0 tDS tDH DIN m DQ BANK 1 tDS tDH tDS DIN m + 1 tDH DIN m + 2 BANK 1 tDS tDH DIN m + 3 tDS tDH DIN b BANK 0 tDS tDH tDS DIN b + 1 tDS DIN b + 2 tDH DIN b + 3 tRP - BANK 0 tWR - BANK 0 tRCD - BANK 0 tDH tRCD - BANK 0 tRAS - BANK 0 tRC - BANK 0 tWR - BANK 1 tRCD - BANK 1 tRRD DON'T CARE NOTE: 1. For this example, the burst length = 4. 2. Requires one clock plus time (5ns or 7ns) with auto precharge or 14ns to 15ns with PRECHARGE. 3. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) tCKH tCKS tCMH MIN 1 MAX MIN 1 -10 MAX -8 SYMBOL* UNITS ns tCMS 2.5 3 2.5 3 ns ns tDH 3 8 10 3 10 12 ns ns ns tRAS 20 1 25 1 ns ns tRP 2.5 1 2.5 1 ns ns tWR tDS tRC tRCD tRRD MIN MAX 2.5 1 2.5 48 80 MIN -10 MAX 2.5 1 2.5 120,000 50 100 UNITS ns ns ns 120,000 ns ns 20 20 20 20 20 20 ns ns ns 1 CLK + 7ns 1 CLK + 5ns - *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 54 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITE - FULL-PAGE BURST T0 T1 T2 tCL CLK T3 T4 T5 (( )) (( )) tCK tCH tCKS tCKH COMMAND tCMH ACTIVE NOP WRITE NOP NOP NOP tCMS tCMH A0-A9, A11, A12 A10 (( )) (( )) NOP BURST TERM NOP (( )) (( )) COLUMN m 1 tAH (( )) (( )) ROW tAS BA0, BA1 tAH ROW tAS Tn + 3 (( )) (( )) DQM/ DQML, DQMH tAS Tn + 2 (( )) (( )) CKE tCMS Tn + 1 tAH BANK (( )) (( )) BANK tDS tDH DIN m DQ tDS tDH DIN m + 1 tDS tDH DIN m + 2 tRCD tDS tDH DIN m + 3 (( )) (( )) tDS tDH DIN m - 1 Full-page burst does not self-terminate. Can use BURST TERMINATE command to stop.2, 3 512 (x16) locations within same row 1,024 (x8) locations within same row 2,048 (x4) locations within same row Full page completed DON'T CARE NOTE: 1. x16: A9, A11 and A12 = "Don't Care" 2. tWR must be satisfied prior to PRECHARGE command. 3. Page left open; no tRP. TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) MIN MAX MIN -10 MAX -8 UNITS SYMBOL* 1 2.5 3 1 2.5 3 ns ns ns tCKH 3 8 3 10 ns ns tCMS 10 20 12 25 ns ns tDS tCKS tCMH tDH tRCD MIN MAX MIN -10 MAX UNITS 1 2.5 1 1 2.5 1 ns ns ns 2.5 1 2.5 1 ns ns 2.5 20 2.5 20 ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 55 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM WRITE - DQM OPERATION 1 T0 T1 tCK CLK T2 T3 T4 T5 NOP NOP NOP T6 T7 NOP NOP tCL tCH tCKS tCKH tCMS tCMH CKE COMMAND ACTIVE NOP WRITE tCMS tCMH DQM/ DQML, DQMU tAS A0-A9, A11, A12 tAH COLUMN m 2 ROW tAS tAH ENABLE AUTO PRECHARGE ROW A10 tAS BA0, BA1 tAH DISABLE AUTO PRECHARGE BANK BANK tDS tDH tDS DIN m DQ tDH DIN m + 2 tDS tDH DIN m + 3 tRCD DON'T CARE NOTE: 1. For this example, the burst length = 4. 2. x16: A9, A11 and A12 = "Don't Care" TIMING PARAMETERS -8 SYMBOL* tAH tAS tCH tCL tCK (3) tCK (2) tCK (1) MIN MAX MIN -10 MAX -8 UNITS SYMBOL* 1 2.5 1 2.5 ns ns tCKH 3 3 8 3 3 10 ns ns ns tCMH 10 20 12 25 ns ns tDS tCKS tCMS tDH tRCD MIN MAX MIN -10 MAX UNITS 1 2.5 1 2.5 ns ns 1 2.5 1 1 2.5 1 ns ns ns 2.5 20 2.5 20 ns ns *CAS latency indicated in parentheses. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 56 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM FBGA "FG" PACKAGE 54-pin, 8mm x 14mm 0.700 0.075 SEATING PLANE 0.10 C 0.10 0.013 C 6.40 1.80 0.05 CTR 0.80 TYP 54X 0.35 SOLDER BALL DIAMETER REFERS TO POST REFLOW CONDITION. THE PREREFLOW DIAMETER IS O 0.33 BALL A9 1.00 MAX PIN A1 ID PIN A1 ID BALL A1 0.80 TYP CL 6.40 14.00 0.10 3.20 0.05 7.00 0.05 3.20 0.05 CL 4.00 0.05 MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE: PLASTIC LAMINATE 8.00 0.10 SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb or 62% Sn, 36% Pb, 2%Ag SOLDER BALL PAD: O .27mm (Bottom View) NOTE: 1. All dimensions are in millimeters. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 57 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc. ADVANCE 256Mb: x16 MOBILE SDRAM FBGA DEVICE MARKING DBFCF Due to the size of the package, Micron's standard part number is not printed on the top of each device. Instead, an abbreviated device mark comprised of a five-digit alphanumeric code is used. The abbreviated device marks are cross referenced to Micron part numbers in Table 1. Speed Grade B = -10 C = -8 Width ( I/Os) D = x16 Device Density H = 256 Product Type R = 2.5V SDR SDRAM, Low Power version (54-ball, 8 x 14) S = 1.8V SDR SDRAM, Low Power version (54-ball, 8 x 14) Product Group D = DRAM Z = DRAM ENGINEERING SAMPLE CROSS REFERENCE FOR FBGA DEVICE MARKING ENGINEERING PART NUMBER ARCHITECTURE MT48V16M16LFFG-8 MT48V16M16LFFG-10 MT48V16M16LFFG-10 MT48H16M16LFF-8 16 Meg x 16 16 Meg x 16 16 Meg x 16 16 Meg x 16 FBGA 54-ball, 54-ball, 54-ball, 54-ball, 8 8 8 8 SAMPLE x x x x 14 14 14 14 ZSHDC ZRHDB ZSHDB ZRHDC PRODUCTION MARKING DSHDC DRHDB DSHDB DRHDC DATA SHEET DESIGNATION Advance: This data sheet contains initial descriptions of products still under development. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 - Pub. 5/02 58 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2002, Micron Technology, Inc.