2STA1943 - STMicroelectronics

December 2007 Rev 2 1/9

Features

■High breakdown voltage VCEO > -230V

■Complementary to 2STC5200

■Fast-switching speed

■Typical fT = 30 MHz

Application

■Audio power amplifier

Description

This device is a NPN transistor manufactured

using new BiT-LA (Bipolar Transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour. Figure 1. Internal schematic diagram

Table 1. Device summary

TO-264

123

Order code Marking Package Packaging

2STA1943 2STA1943 TO-264 Tube

2STA1943

High power PNP epitaxial planar bipolar transistor

www.st.com

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Electrical ratings 2STA1943

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) -230 V

VCEO Collector-emitter voltage (IB = 0) -230 V

VEBO Emitter-base voltage (IC = 0) -5 V

ICCollector current -15 A

ICM Collector peak current -30 A

Ptot Total dissipation at TC = 25°C 150 W

Tstg Storage temperature -55 to 150 °C

TJOperating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

RthJ-case Thermal resistance junction-case Max 0.83 °C/W

2STA1943 Electrical characteristics

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2 Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

ICBO

Collector cut-off current

(IE = 0) VCB = -230 V -5 µA

IEBO

Emitter cut-off current

(IC = 0) VEB = -5 V -5 µA

V(BR)CEO(1)

1. Pulsed: pulse duration = 300 µs, duty cycle < 1.5%

Collector-emitter breakdown

voltage (IB = 0) IC = -50 mA -230 V

V(BR)CBO

Collector-base breakdown

voltage (IE = 0) IC = -100 µA -230 V

V(BR)EBO(1) Emitter-base breakdown

voltage (IC = 0) IE = -1 mA -5 V

VCE(sat)(1) Collector-emitter saturation

voltage IC = -8 A IB = -800 mA -3 V

VBE Base-emitter voltage IC = -7 A VCE = -5 V -1.5 V

hFE DC current gain IC = -1 A VCE = -5 V

IC = -7 A VCE = -5 V

160

ton

Resistive load

Turn-on time

Storage time

Fall time

VCC = -60 V IC = -5A

IB1= -IB2 = -0.5 A

0.24

1.2

0.21

µs

fTTransition frequency IC = -1 A VCE = -5 V 30 MHz

CCBO

Collector-base capacitance

(IE = 0) VCB = -10 V f = 1 MHz 225 pF

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Electrical characteristics 2STA1943

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Derating curve

Figure 4. Output characteristics Figure 5. DC current gain

Figure 6. Collector-emitter saturation voltage Figure 7. Collector current vs base-emitter

voltage

2STA1943 Electrical characteristics

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2.2 Test circuit

Figure 8. Resistive load switching test circuit

1) Fast electronic switch

2) Non-inductive resistor

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Package mechanical data 2STA1943

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

2STA1943 Package mechanical data

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Dim. mm.

Min. Typ Max.

A4.805.20

A1 2.50 3.10

b0.90 1.0 1.25

b1 2.5

b22.8

c 0.50 0.60 0.85

D 25.6 26.4

E19.80 20.20

e5.15 5.75

L19.50 20.50

L1 2.302.70

øP 3.55 3.65

TO-264 Mechanical data

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Revision history 2STA1943

4 Revision history

Table 5. Document revision history

Date Revision Changes

18-Jun-2007 1Initial release.

12-Dec-2007 2 Document promoted from preliminary data to datasheet.

2STA1943 Revision history

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