ON Semiconductor PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. * Low Collector-Emitter Saturation Voltage -- * * IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 = 1.5 Vdc (Max) 2N5745 DC Current Gain Specified -- = 1.0 to 30 Adc Complements to NPN 2N5301, 2N5302, 2N303 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIII III IIII III IIIIIIIII IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III *MAXIMUM RATINGS Rating Symbol 2N4398 2N4399 2N5745 Unit Collector-Emitter Voltage VCEO 40 60 80 Vdc Collector-Base Voltage VCB 40 60 80 Vdc Emitter-Base Voltage VEB Collector Current -- Continuous Peak IC Base Current -- Continuous Peak IB Total Device Dissipation @ TA = 25C** Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range 5.0 30 50 20, 30 AMPERE POWER TRANSISTORS PNP SILICON 40-60-180 VOLTS 200 WATTS Vdc 30 50 20 50 Adc 7.5 15 Adc 5.0 28.6 Watts mW/C PD 200 1.15 Watts W/C TJ, Tstg -65 to +200 C CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 0.875 C/W Thermal Resistance, Junction to Ambient JA 35 C/W * Indicates JEDEC Registered Data. ** ON Semiconductor guarantees this data in addition to JEDEC Registered Data. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 9 1 Publication Order Number: 2N4398/D 2N4398 2N4399 2N5745 PD, POWER DISSIPATION (WATTS) TA TC 10 200 9.0 180 8.0 160 7.0 140 6.0 120 TC 5.0 100 4.0 80 3.0 60 2.0 40 1.0 20 0 0 TA 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power-Temperature Derating Curve Safe Area Curves are indicated by Figure 13. All limits are applicable and must be observed. http://onsemi.com 2 2N4398 2N4399 2N5745 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 40 60 80 -- -- -- Vdc -- -- -- 5.0 5.0 5.0 -- -- -- -- -- 5.0 5.0 5.0 10 10 -- -- -- 1.0 1.0 1.0 -- 5.0 40 15 15 5.0 5.0 -- 60 60 -- -- -- -- -- -- -- -- -- 0.75 1.0 1.0 1.5 2.0 2.0 4.0 -- -- -- -- -- -- 1.6 1.7 1.85 2.0 2.5 2.5 -- -- -- -- 1.5 1.7 2.5 3.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N4398 2N4399 2N5745 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) ICEO 2N4398 2N4399 2N5745 Collector Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 30 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) mAdc ICEX 2N4398 2N4399 2N5745 2N4398, 2N4399 2N5745 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) mAdc ICBO 2N4398 2N4399 2N5745 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 20 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) hFE All Types 2N5745 2N4398, 2N4399 2N5745 2N4398, 2N4399 Collector-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) -- VCE(sat) 2N4398, 2N4399 2N5745 2N4398, 2N4399 2N5745 2N4398, 2N4399 2N5745 2N4398, 2N4399 (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc)** Vdc VBE(sat) (IC = 20 Adc, IB = 2.0 Adc)** (IC = 20 Adc, IB = 4.0 Adc) 2N4398, 2N4399 2N5745 2N4398, 2N4399 2N5745 2N4398, 2N4399 2N5745 Base-Emitter On Voltage (1) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5745 2N4398, 2N4399 2N5745 2N4398, 2N4399 (IC = 15 Adc, IB = 1.5 Adc) Vdc VBE(on) * Indicates JEDEC Registered Data. ** ON Semiconductor Guarantees this Data in Addition to JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% http://onsemi.com 3 Vdc (continued) 2N4398 2N4399 2N5745 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III IIIIIIII IIIIIIII IIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS -- continued Characteristic Symbol Min Max Unit 4.0 2.0 -- -- hfe 40 -- -- 2N4398, 2N4399 2N5745 tr -- -- 0.4 1.0 s 2N4396, 2N4399 2N5745 ts -- -- 1.5 2.0 s 2N4398, 2N4399 2N5746 tf -- -- 0.6 1.0 s DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2N4398, 2N4399 2N5745 Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) MHz SWITCHING CHARACTERISTIC Rise Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Storage Time Fall Time (2) fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS VCC RL +2.0 V 10 0 tr 20 ns RB -30 V VCC 3.0 +9.0 V TO SCOPE tr 20 ns 0 -11 V 10 10 to 100 s tr 20 ns 10 to 100 s VBB +4.0 V DUTY CYCLE 2.0% Figure 2. Turn-On Time Figure 3. Turn-Off Time http://onsemi.com 4 3.0 TO SCOPE tr 20 ns RB -11 V DUTY CYCLE 2.0% RL -30 V 2N4398 2N4399 2N5745 TYPICAL "ON" REGION CHARACTERISTICS hFE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 VCE = 10 Vdc VCE = 2.0 Vdc TJ = 175C 25C 1.0 0.7 0.5 -55C 0.3 0.2 0.1 0.03 0.05 0.07 0.1 0.2 0.3 3.0 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 20 10 30 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. DC Current Gain 2.0 TJ = 25C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.4 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (AMP) 0.7 1.0 2.0 3.0 5.0 7.0 10 10 20 30 Figure 5. Collector Saturation Region 1.8 TEMPERATURE COEFFICIENTS (mV/ C) 2.0 TJ = 25C VOLTAGE (VOLTS) 1.6 1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 0.6 VBE @ VCE = 2.0 V 0.4 0.2 0 0.03 0.05 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 2.5 2.0 1.0 0.5 *VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB for VBE -2.0 -2.5 0.03 0.05 20 30 *APPLIES FOR IC/IB < hFE/2 1.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 6. "On" Voltages Figure 7. Temperature Coefficients http://onsemi.com 5 2N4398 2N4399 2N5745 RATINGS AND THERMAL DATA IC, COLLECTOR CURRENT (AMP) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 1.0 ms 50 5.0ms 20 10 5.0 2N4398, 2N4399 2N5745 dc TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2N4398 2N4399 2N5745 2.0 1.0 0.5 0.2 0.1 1.0 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 8. Active Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 D = 0.5 STEADY STATE VALUES JC() = 0.875C/W JC(t) = r(t) JC() 0.2 0.1 0.1 0.07 0.05 0.05 0.03 0.01 0.02 0.01 0.01 0 (SINGLE PULSE) 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 500 1000 Figure 9. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model as shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 9 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 9 by the steady state value JC(). Example: The 2N4398 is dissipating 100 watts under the following conditions: t1 = 1.0 ms, tP = 5.0 ms. (D = 0.2) Using Figure 9, at a pulse width of 1.0 ms and D = 0.2, the reading of r (t) is 0.28. The peak rise in junction temperature is therefore tP PP PP t1 1/f t DUTY CYCLE, D = t1 f - 1 tP PEAK PULSE POWER = PP T = r(t) x PP x JC() = 0.28 x 100 x 0.875 = 24.5C http://onsemi.com 6 2N4398 2N4399 2N5745 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N4398 2N4399 2N5745 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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