DTA114E series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
VCC -50V
IC(MAX.) -100mA
R110kΩ DTA114EM DTA114EEB
R210kΩ (SC-105AA) (SC-89)
EMT3 UMT3F
llFeatures
1) Built-In Biasing Resistors, R1 = R2 = 10kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC114E series
DTA114EE DTA114EUB
SOT-416(SC-75A) (SC-85)
UMT3 SMT3
DTA114EUA DTA114EKA
SOT-323(SC-70) SOT-346(SC-59)
llApplication
INVERTER, INTERFACE, DRIVER
llInner circuit
DTA114EM/ DTA114EEB/ DTA114EUB DTA114EE/ DTA114EUA/ DTA114EKA
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA114EM VMT3 1212 T2L 180 8 8000 14
DTA114EEB EMT3F 1616 TL 180 8 3000 14
DTA114EE EMT3 1616 TL 180 8 3000 14
DTA114EUB UMT3F 2021 TL 180 8 3000 14
DTA114EUA UMT3 2021 T106 180 8 3000 14
DTA114EKA SMT3 2928 T146 180 8 3000 14
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© 2015 ROHM Co., Ltd. All rights reserved. 1/10 20150527 - Rev.004
DTA114E series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Supply voltage VCC -50 V
Input voltage VIN -40 to 10 V
Output current IO-50 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation
DTA114EM
PD*2
150
mW
DTA114EEB 150
DTA114EE 150
DTA114EUB 200
DTA114EUA 200
DTA114EKA 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
VI(off) VCC = -5V, IO = -100μA - - -0.5
V
VI(on) VO = -0.3V, IO = -10mA -3.0 - -
Output voltage VO(on) IO / II = -10mA / -0.5mA - -100 -300 mV
Input current II VI = -5V - - -880 μA
Output current IO(off) VCC = -50V, VI = 0V - - -500 nA
DC current gain GI VO = -5V, IO = -5mA 30 - - -
Input resistance R1- 7 10 13 kΩ
Resistance ratio R2/R1- 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
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© 2015 ROHM Co., Ltd. All rights reserved. 2/10 20150527 - Rev.004
DTA114E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.1 Input voltage vs. output current (ON
characteristics)
Fig.2 Output current vs. input voltage (OFF
characteristics)
Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current
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© 2015 ROHM Co., Ltd. All rights reserved. 3/10 20150527 - Rev.004
DTA114E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.5 Output voltage vs. output current
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© 2015 ROHM Co., Ltd. All rights reserved. 4/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 5/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 6/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 7/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 8/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 9/10 20150527 - Rev.004
DTA114E series Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 10/10 20150527 - Rev.004
