Central BSX62 BSX63 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX62, BSX63 types are NPN Silicon Transistors designed for general purpose applications where high collector current is required. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage SYMBOL VCBO BSX62 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 5.0 Collector Current IC 3.0 A Power Dissipation PD 5.0 W TJ, Tstg -65 to +200 C JC 35 C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V (BSX62) ICBO VCB=40V, TC=150C (BSX62) ICBO VCB=60V (BSX63) ICBO VCB=60V, TC=150C (BSX63) IEBO VEB=5.0V VCE(SAT) IC=1.0A, IB=100mA VCE(SAT) IC=2.0A, IB=200mA VBE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=2.0A, IB=200mA VBE(ON) VCE=1.0V, IC=100mA VBE(ON) VCE=1.0V, IC=1.0A VBE(ON) VCE=5.0V, IC=2.0A hFE VCE=1.0V, IC=1.0A (BSX62, 63-10) 63 hFE VCE=1.0V, IC=1.0A (BSX62, 63-16) 100 Cob VCB=10V, IE=0, f=1.0MHz fT VCE=10V, IC=200mA, f=100MHz 30 ton IC=1.0A, IB1=IB2=50mA toff IC=1.0A, IB1=IB2=50mA TYP BSX63 80 UNITS V 60 V V MAX 100 100 100 100 100 0.7 0.8 1.2 1.3 1.0 1.2 1.3 160 250 70 300 4.0 UNITS nA A nA A nA V V V V V V V pF MHz ns s R0 (2-April 2008) Central TM BSX62 BSX63 Semiconductor Corp. NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR (case) MARKING: FULL PART NUMBER R0 (2-April 2008)