MAXIMUM RATINGS: (TC=25°C) SYMBOL BSX62 BSX63 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC3.0 A
Power Dissipation PD5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=40V (BSX62) 100 nA
ICBO VCB=40V, TC=150°C (BSX62) 100 μA
ICBO VCB=60V (BSX63) 100 nA
ICBO VCB=60V, TC=150°C (BSX63) 100 μA
IEBO VEB=5.0V 100 nA
VCE(SAT) IC=1.0A, IB=100mA 0.7 V
VCE(SAT) IC=2.0A, IB=200mA 0.8 V
VBE(SAT) IC=1.0A, IB=100mA 1.2 V
VBE(SAT) IC=2.0A, IB=200mA 1.3 V
VBE(ON) VCE=1.0V, IC=100mA 1.0 V
VBE(ON) VCE=1.0V, IC=1.0A 1.2 V
VBE(ON) VCE=5.0V, IC=2.0A 1.3 V
hFE VCE=1.0V, IC=1.0A (BSX62, 63-10) 63 160
hFE VCE=1.0V, IC=1.0A (BSX62, 63-16) 100 250
Cob VCB=10V, IE=0, f=1.0MHz 70 pF
fTVCE=10V, IC=200mA, f=100MHz 30 MHz
ton IC=1.0A, IB1=IB2=50mA 300 ns
toff IC=1.0A, IB1=IB2=50mA 4.0 μs
BSX62
BSX63
NPN SILICON TRANSISTOR
TO-39 CASE
Central
Semiconductor Corp.
TM
R0 (2-April 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BSX62,
BSX63 types are NPN Silicon Transistors
designed for general purpose applications
where high collector current is required.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
BSX62
BSX63
NPN SILICON TRANSISTOR
R0 (2-April 2008)
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR (case)
MARKING: FULL PART NUMBER
