15. MISCEL IN ORDER OF: (1)CATEGORY,{2)TYPE NO. [2 ] 11 [CATEGORY | M/DWG #/L'C LINE TYPE U]STRUC- A{200 0 DESCRIPTION No. No. S| TURE TI] s/a D E T0200 E Ser. 1 SDiO76~ 18 |N-PE Si {W52e HE Comm;Po 7OWmin,Gp 13-5dBmin at 30MHz,12.5V;Pd 220W:Vcbho 36V z $D1080-2 18 jN-PE Si |W54 VCBO 36V:ic 750mA;Pt 5.0W;Po 750mW:;Pg 8.0dB:Zin 3.8 J4.0;Zout 25 J22 | 3 $D01115-2 [18 [N-PE Si_[W66 VCBO 36ViIc 1.0A;Pt 5.0W;Po 3.0W;Pg 10dB;fo 175MHz 4 $01127 18 |N-PE Si [TO39 VEBO 36V;lc 640mA;Pt 8. OW;Po 4.0W;Pg 10dB;Zin 4.1 -J5.6;Zout 13.5 -J20 5 $01143-1 18 |N-PE Si |W52 VCBO 36Vilc 2.0A;Pt 37W:Po 10W;Pg 10dB;Zin 1.24 J2.88;Zout 5.32 J6.15 __ _|$01169 ABIN-PE = jSi_)T72r VCBO 36Viilc 6.0A;Pt 8OW;Po 40W;Pg 6.0dB;Zin 0.85 JO0.3;Zout 1.73 J1.52 __ 7 $01212-7 18 |N-PE Si |262a VEBO 36V;Ic GOOMA;Pt 9.6W:Po 6. OW:Pg 10dB;Zin 3.9 J7.3;Zout 17.8 J5.6 8 $D1214-6 18 |N-PE Si |202a VCBO 36V;Ic 2.0A;Pt 15W:Po 14W;Pg 11dB;Zin 2.4 JO.8;Zout 6.1 J2.6 | 9 _{D1219-5 18 |N-E Si [T72h VHF;Po 50W at 136MHz,28V;:Power Gain 10dB;BVces 65V;lc 6.5Amax _ 10 $D1229-1 18 IN-PE Si (W52 VCBO 36Vilc 4.0A;Pt 65W:Po 25W;Pg 5.0dB;Zin 1.0 J1.83;Zout 2.89 14.14 11 $D1278 18 |N-E Si |772h VHF;Po 40W at 175MHz,12.5V;Power Gain 6.0dB;BVces 36V;Ilc 6.0Amax 12 $D1405 18 |N-PE Si |W52) VCBO 36V;lc_ 15A;Pt 270W:Po 60W;:Pg 13dB;Zin 0.7 J.75:Zout 1.2 J1.0 | 13 $01416 18 [N-PE Si [W55 VCBO 36V;ic 20A;Pt 220W;Po 7OW:Pg 6.7dB:Zin 58 J.44;Zout .72 J.44 14 $D1438 18 |N-PE Si |[W52 VCBO 65V;lc 9.0A;Pt 103W;Po 80W:Pg 6.7dB;Zin 1.3 J1.7;Zout 3.8 J4.4 15 $D1438-2 1BIN-PE | Si_ | W552 VHF Comm;Po 100Wmin,Gp 7.0dBmin,Zin .90 j1.1,2cl 3.4 j2.9 at 136MHz,28V;Pd 103W = 16 $01446 18 [N-PE Si |W52 VCBO 36Vile TZA;Pt 183W;Po 7OW;Pg 10dB;Zin 0.8 J0.9;Zout 1.2 JO.6 17 $01477 18 |N-PE Si |W55 VHE Comm:Po 100Wmin,Gp 6.0dBmin,Zin 1.5-j.90,Zcl .50-}1.0 at 175MHz,12V;Pd 270W 18 [$01487_ 18 IN-PE Si |W55 HF Comm:Po 100Wmin,Gp t0dBmin at 30MHz,12.5V;Pd 290W;Vecbo 36V 19# |SRF402 718 [N-PL Si [TO39 Po 3.0Wmin,Pin 300mW:ET 60% min at 175MHzVec 12.5V;Cob t2pf 20# |SRF404 18 |N-PL Si |TO39 Po 3.0Wmin,Pin 300mW:Eff 60% min at 175MHz,Vcc 12.5V;Cob 15pf 21# |SRF405 _ 18 (|N-PL =| Si_ |TO39 Po 3.0Wmin,Pin 300mW-Eff 50% min at 175MHz,Vec 28V;Cob 12pf 22# |Z2TB3-12 48 N-PL Si [T162 Pout 3-OWmin at 175MHz,Vcc 12.5;150-175MHz Range:Cob 15pf max;Eff 60%min 23% {ZTB3-28 18 jN-PL Si |T162 Pout 3.0Wmin at 175MHz,Vcc 28V;:Gain 13dBmin;Cob 12pf max;Eff 50%min 24% |2TB3-28FL 18{N-PL ss |Si_ [W159 Pout 3.0Wmin at 175MHz,Vce 28V:Gain 13dBmin;Cob 12pf max;Eff 50%min | 25% [ZTB12-12 18 [N-PL Si [7162 Pout 12Wmin at 175MHz,Vcc 12.5;150-175MHz Range;Cob 35pf max;Pin 2.5Wmax 26% |ZTB12-28 18 |N-PL Si |T162 Pout 12Wmin at 175MHz,Vec 28V;Gain 10.8dBmin;Cob 25pf max:Eff 50%min 27# |Z7B12-28FL_ 18 IN-PL [Si |W159 Pout 12Wmin at 175MHz,Vcco 28V:Gain 10.8dBmin;Cob 25pf max:Eff 50%min 2 28# (ZTB25-12 18 [N-PL Si |T162 Pout 25Wmin at 175MHz,Vec 12.5;150-175MHz Range;Cob S5pf max:Pin 6.0OWmax 29# |ZTB25-28 18 |N-PL Si iT162 Pout 25Wmin at 175MHz,Vcec 28V;Gain 8.5dBmin;Cob 50pf max;Eff 50%min 30# {|ZTB25-28FL 18|N-PL ss |Si_ |W189 Pout 25Wmin at 175MHz,Vcc 28V;Gain 8.5dBmin;Cob 50pf max;Eff 50%min 2 31# [(ZTB70-28FL 18 [N-PL Si [WS2v Pout 70Wmin at 175MHz,Vce 28V;Pin 2ZOWmax;Cob 250pf max;Eff 50% min 32# |BZW20 19 |N Si |y236 Transistor w/integrated base emitter resistance and a Z dicde = ---} .. - 1 a _. 4}