FZT689B
Document number: DS33155 Rev. 4 - 2
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FZT689B
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A Product Line of
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20V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
Features
BVCEO > 20V
BVCBO > 20V
IC = 3.0A High Continuous Current
hFE > 400 @ 2A and Low Saturation Voltage
Extremely Low Equivalent On-Resistance; RCE(SAT) 92mΩ at 3A
Complementary PNP Type: FZT789B
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Darlington Replacement
Flash Gun Convertors and Battery Powered Circuits
Ordering Information (Note 4)
Product
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
FZT689BTA
AEC-Q101
FZT689B
7
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
SOT223
Top View
Device Symbol
Top View
Pin-Out
Green
C
E
B
C
E
C
B
YWW
FZT
689B
FZT 689B = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT689B
Document number: DS33155 Rev. 4 - 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
3
A
Peak Pulse Current
ICM
8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
3.0
W
(Note 6)
2.0
(Note 7)
1.6
(Note 8)
1.2
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
41.7
°C/W
(Note 6)
62.5
(Note 7)
78.1
(Note 8)
104
Thermal Resistance Junction to Lead
(Note 9)
RJL
12.9
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT689B
Document number: DS33155 Rev. 4 - 2
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A Product Line of
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Thermal Characteristics and Derating Information
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
Tamb=25°C
25mm x 25mm
2oz FR4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 110 100 1k
1
10
100
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
FZT689B
Document number: DS33155 Rev. 4 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
20
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
20
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
V
IE = 100µA
Collector-Base Cut-Off Current
ICBO
0.1
µA
VCB = 16V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB = 5.6V
DC Current Gain (Note 11)
hFE
500
400
150
IC = 0.1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
0.10
0.50
0.45
V
IC = 0.1A, IB = 0.5mA
IC = 2A, IB = 10mA
IC = 3A, IB = 20mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
0.9
V
IC = 1A, IB = 10mA
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
0.9
V
IC = 1A, VCE = 2V
Input Capacitance
Cibo
200
pF
VEB = 0.5V, f = 1MHz
Output Capacitance
Cobo
16
pF
VCB = 10V, f = 1MHz
Current Gain-Bandwidth Product
fT
150
MHz
VCE = 5V, IC = 50mA, f=50MHz
Turn-On Time
ton
30
ns
VCC = 10V, IC = 500mA
IB1 = -IB2 = 50mA
Turn-Off Time
toff
800
ns
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
FZT689B
Document number: DS33155 Rev. 4 - 2
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FZT689B
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT689B
Document number: DS33155 Rev. 4 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
FZT689B
Document number: DS33155 Rev. 4 - 2
7 of 7
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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