IRF634B - Fairchild Semiconductor

February 2001

Rev. A, February 2001

IRF634B

250V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

Features

• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V

• Low gate charge ( typical 29 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maxim um Ratings TC = 25°C unless otherwise noted

Thermal Char acteristics

Symbol Parameter IRF634B Units

VDSS Drain-Source Voltage 250 V

IDDrain Current - Continuous (TC = 25°C) 8.1 A

- Continuous (TC = 100°C) 5.1 A

IDM Drain Current - Pulsed (Note 1) 32.4 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ

IAR Avalanche Current (Note 1) 8.1 A

EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns

PDPower Dissipation (TC = 25°C) 74 W

- Derate above 25°C 0.59 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 1.69 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

TO-220

IRF Series

Rev. A, February 2001

IRF634B

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8.1A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA250 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.27 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA

VDS = 200 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 4.05 A -- 0.345 0.45 Ω

gFS Forward Transconductance VDS = 40 V, ID = 4.05 A -- 7.6 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 780 1000 pF

Coss Output Capacitance -- 95 125 pF

Crss Reverse Transfer Capacitance -- 20 25 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125 V, ID = 8.1 A,

RG = 25 Ω

-- 15 40 ns

trTurn-On Rise Time -- 75 160 ns

td(off) Turn-Off De l a y Time -- 10 0 210 n s

tfTurn -Off Fa ll Time -- 65 140 n s

QgTotal Gate Ch arge VDS = 200 V, ID = 8.1 A,

VGS = 10 V

-- 29 38 nC

Qgs Gate-Source Charge -- 4.2 -- nC

Qgd Gate-Drain Charge -- 14 -- nC

Drain-Source Di ode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.1 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.4 A

VSD Drain-Source Diode Forward V oltage VGS = 0 V, IS = 8.1 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 8.1 A,

dIF / dt = 100 A/µs

-- 170 -- ns

Qrr Reverse Recovery Charge -- 0.91 -- µC

IRF634B

0 5 10 15 20 25 30

VDS = 125 V

VDS = 50V

VDS = 200 V

! N o te : I D = 8.1 A

VGS, Gate-Source Voltage [V]

QG, To ta l Ga te Ch a rg e [n C ]

10-1 100101

500

1000

1500

2000

Coss

Ciss = C gs + Cgd (C ds = shorted)

Coss = Cds + Cgd

Crss = C gd

! N ote s :

1. VGS = 0 V

2. f = 1 MHz

Crss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

150"

! Note s :

1. VGS = 0V

2. 25 0 #s Pulse Test

25"

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 6 12 18 24 30

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 20V

VGS = 10V

! No te : TJ = 25"

RDS(ON) [$],

Drain-Source On-Resistance

ID, Drain Current [A]

246810

10-1

100

101

150oC

25oC

-55oC

! N ote s :

1. VDS = 40V

2. 25 0 #s P ulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

10-1 100101

10-1

100

101

V GS

Top : 1 5 .0 V

1 0 .0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

5 .5 V

Botto m : 5.0 V

! N ote s :

1. 25 0 #s Pu lse Test

2. TC = 25"

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitanc e C haracteristics Figure 6. Gate Charge C haracter is tics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteristics

IRF634B

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

! Notes :

1 . Z%JC(t) = 1.6 9 "/W Ma x .

2 . Du ty F a c tor, D = t1/t2

3 . TJM - T C = PDM * Z%JC(t)

s in g le p u ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), T he r mal Re s p o n s e

t1, S quare W ave Pulse D uration [sec]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature ["

]

100101102

10-1

100

101

102

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Sin g le P u ls e

ID, Drain C u rr en t [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

! N o te s :

1 . V GS = 10 V

2 . ID = 4.05 A

RDS(ON) , (Norm alized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 #A

BV DSS , (Nor ma liz e d )

Drain-Source Breakdown Voltage

TJ, Junction Tem pe rature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

Figu re 7. Breakdown Voltage Variati on

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Transient Thermal Respons e Cur ve

PDM

IRF634B

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

IRF634B

Peak Diode Recover y dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

IRF634B

Package Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10

–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

TO-220

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when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This dat asheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. G

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TinyLogic™

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