BD436G, BD438G, BD440G, BD442G Plastic Medium Power Silicon PNP Transistor This series of plastic, medium-power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. http://onsemi.com 4.0 AMP POWER TRANSISTORS PNP SILICON Features * These Devices are Pb-Free and are RoHS Compliant* COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BD436G BD438G BD440G BD442G VCEO Collector-Base Voltage BD436G BD438G BD440G BD442G VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range BASE 3 Unit Vdc 32 45 60 80 EMITTER 1 Vdc 32 45 60 80 TO-225 CASE 77-09 STYLE 1 1 2 3 MARKING DIAGRAM TJ, Tstg 36 288 W W/C - 55 to + 150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW BD4xxG Y WW BD4xx THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol Max Unit RqJC 3.5 C/W G ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2013 December, 2013 - Rev. 16 1 = Year = Work Week = Device Code xx = 36, 36T, 38, 38T, 40, 42 = Pb-Free Package Package Shipping BD436G TO-225 (Pb-Free) 500 Units/Box BD436TG TO-225 (Pb-Free) 50 Units/Rail BD438G TO-225 (Pb-Free) 500 Units/Box BD438TG TO-225 (Pb-Free) 50 Units/Rail BD440G TO-225 (Pb-Free) 500 Units/Box BD442G TO-225 (Pb-Free) 500 Units/Box Publication Order Number: BD438/D BD436G, BD438G, BD440G, BD442G ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector-Emitter Breakdown Voltage (IC = 100 mA, IB = 0) BD436G BD438G BD440G BD442G V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 mA, IB = 0) BD436G BD438G BD440G BD442G V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO ICBO Emitter Cutoff Current (VEB = 5.0 V) IEBO DC Current Gain (IC = 10 mA, VCE = 5.0 V) BD436G BD438G BD440G BD442G hFE DC Current Gain (IC = 500 mA, VCE = 1.0 V) BD436G BD438G BD440G BD442G hFE DC Current Gain (IC = 2.0 A, VCE = 1.0 V) BD436G BD438G BD440G BD442G hFE Collector Saturation Voltage (IC = 2.0 A, IB = 0.2 A) BD436G (IC = 3.0 A, IB = 0.3 A) BD438G BD440G BD442G VCE(sat) Base-Emitter On Voltage (IC = 2.0 A, VCE = 1.0 V) BD436G/BD438G BD440G/BD442G VBE(ON) Typ Max Unit Vdc 32 45 60 80 Collector Cutoff Current (VCB = 32 V, IE = 0) BD436G (VCB = 45 V, IE = 0) BD438G (VCB = 60 V, IE = 0) BD440G (VCB = 80 V, IE = 0) BD442G Current-Gain - Bandwidth Product (VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) Min - - - - - - - - Vdc 32 45 60 80 - - - - - - - - 5.0 - - Vdc mAdc - - 0.1 - - 0.1 - - 0.1 - - 0.1 - - 1.0 mAdc - 40 30 20 15 - - - - - - - - - 85 85 40 40 - - - - 475 475 475 475 - 50 40 25 15 - - - - - - - - Vdc - - 0.5 - - - - - - 0.7 0.8 0.8 Vdc - - - - 1.1 1.5 3.0 - - fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) BD436G, BD438G, BD440G, BD442G 2.0 1.6 IC = 10 mA 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 255C 0.4 0 0.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 hFE, CURRENT GAIN (NORMALIZED) Figure 1. Collector Saturation Region 200 100 80 60 40 20 0 10 2 3 100 1 5 IC, COLLECTOR CURRENT (AMP) Figure 2. Current Gain IC, COLLECTOR CURRENT (AMP) 2.0 TJ = 25C VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 10 TJ = 150C dc SECONDARY BREAKDOWN THERMAL LIMIT TC = 25C BONDING WIRE LIMIT 1.0 0.5 CURVES APPLY BELOW RATED VCEO BD438 0.1 1.0 2.0 3.0 4.0 5 ms 4.0 BD440 BD442 1.0 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 4. Active Region Safe Operating Area Figure 3. "On" Voltage http://onsemi.com 3 100 BD436G, BD438G, BD440G, BD442G PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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