© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 16 1Publication Order Number:
BD438/D
BD436G, BD438G, BD440G,
BD442G
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary
types are BD437 and BD441.
Features
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD436G
BD438G
BD440G
BD442G
VCEO 32
45
60
80
Vdc
Collector−Base Voltage
BD436G
BD438G
BD440G
BD442G
VCBO 32
45
60
80
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC4.0 Adc
Base Current IB1.0 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD36
288 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 3.5 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMP POWER
TRANSISTORS PNP SILICON
Y = Year
WW = Work Week
BD4xx = Device Code
xx = 36, 36T, 38, 38T, 40, 42
G = Pb−Free Package
MARKING DIAGRAM
Device Package Shipping
BD438G TO−225
(Pb−Free) 500 Units/Box
BD436TG TO−225
(Pb−Free) 50 Units/Rail
ORDERING INFORMATION
BD436G TO−225
(Pb−Free) 500 Units/Box
BD438TG TO−225
(Pb−Free) 50 Units/Rail
BD440G TO−225
(Pb−Free) 500 Units/Box
BD442G TO−225
(Pb−Free) 500 Units/Box
YWW
BD4xxG
BASE 3
EMITTER 1
COLLECTOR 2, 4
TO−225
CASE 77−09
STYLE 1
123
BD436G, BD438G, BD440G, BD442G
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
BD436G
BD438G
BD440G
BD442G
V(BR)CEO
32
45
60
80
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD436G
BD438G
BD440G
BD442G
V(BR)CBO
32
45
60
80
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 32 V, IE = 0)
BD436G
(VCB = 45 V, IE = 0)
BD438G
(VCB = 60 V, IE = 0)
BD440G
(VCB = 80 V, IE = 0)
BD442G
ICBO
0.1
0.1
0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 V) IEBO 1.0 mAdc
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD436G
BD438G
BD440G
BD442G
hFE
40
30
20
15
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD436G
BD438G
BD440G
BD442G
hFE
85
85
40
40
475
475
475
475
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD436G
BD438G
BD440G
BD442G
hFE
50
40
25
15
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 A)
BD436G
(IC = 3.0 A, IB = 0.3 A)
BD438G
BD440G
BD442G
VCE(sat)
0.5
0.7
0.8
0.8
Vdc
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
BD436G/BD438G
BD440G/BD442G
VBE(ON)
1.1
1.5
Vdc
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) fT3.0 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BD436G, BD438G, BD440G, BD442G
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3
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
00.05
1.6
1.2
0.8
0.4
1.0 2.0 10 70 500
IC = 10 mA 100 mA 1.0 A
0.1 100205.0
TJ =
255C
3.0 300.07 300200507.00.2 0.3 0.5 0.7
3.0 A
Figure 2. Current Gain
200
010
80
12 53 100 IC, COLLECTOR CURRENT (AMP)
hFE, CURRENT GAIN (NORMALIZED)
100
60
40
20
2.0
0.005
IC, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 3. “On” Voltage
0.020.030.05 0.1 0.2
VBE @ VCE = 2.0 V
0.01 0.3 0.5 1.02.0 3.04
.0
Figure 4. Active Region Safe Operating Area
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
4.0
1.0
0.1 2.0 10 20 10
0
0.5
I
C
, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5 ms
1.0 5.0 50
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD438
BD440
BD442
BD436G, BD438G, BD440G, BD442G
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4
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
ec
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
123321
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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Phone: 81−3−5817−1050
BD438/D
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