CS45-16io1 Thyristor VRRM = 1600 V I TAV = 45 A VT = 1.37 V Single Thyristor Part number CS45-16io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1 Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25C 50 A VR/D = 1600 V TVJ = 125C 3 mA TVJ = 25C 1.36 V 1.73 V 1.37 V VT IT = forward voltage drop 45 A IT = 90 A IT = 45 A IT = 90 A I TAV average forward current TC = 110C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 C for power loss calculation only Ptot It min. 1.85 V T VJ = 150 C 45 A 71 A TVJ = 150 C 0.88 V 310 W t = 10 ms; (50 Hz), sine TVJ = 45C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 150 C 440 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 t = 10 ms; (50 Hz), sine TVJ = 45C 1.35 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.31 kAs TVJ = 150 C 970 As 940 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 22 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.25 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 11 0.4 TVJ = 125C; f = 50 Hz repetitive, IT = 135 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM non-repet., IT = 45 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 80 mA TVJ = -40 C 200 mA TVJ = 125 C 0.2 V 10 mA TVJ = 25 C 150 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 45 A; VD = VDRM TVJ = 150 C di/dt = 15 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1 Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 150 C Weight 6 MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking Logo Part Number DateCode Assembly Code abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Number CS45-16io1 Similar Part CS45-08io1 CS45-12io1 CS45-16io1R Equivalent Circuits for Simulation I V0 R0 Marking on Product CS45-16io1 Package TO-247AD (3) TO-247AD (3) ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 467693 Voltage class 800 1200 1600 T VJ = 150C Thyristor V 0 max threshold voltage 0.88 V R 0 max slope resistance * 8.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1 Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1 Thyristor 100 450 80 400 10000 50 Hz, 80% VRRM VR = 0 V TVJ = 45C 60 IT 350 2 It [A] 40 TVJ = 45C 1000 ITSM 300 2 [A s] [A] 125C 150C 20 TVJ = 125C 250 TVJ = 25C 0 0.5 1.0 TVJ = 125C 200 1.5 100 2.0 0.01 0.1 1 2 3 t [s] VT [V] t [ms] Fig. 3 I t versus time (1-10 ms) 1000 1: IGD, TVJ = 150C 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward characteristics 10 1 80 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C dc = 1 0.5 0.4 0.33 0.17 0.08 60 6 2 VG 1 100 5 3 typ. tgd IT(AV)M Limit 40 1 [s] [V] 4 [A] 10 TVJ = 125C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 1 10 10000 0 100 dc = 1 0.5 0.4 0.33 0.17 0.08 60 [W] 25 50 75 Fig. 6 Max. forward current at case temperature 0.4 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 40 0.3 ZthJC 0.2 [K/W] 20 0.1 0 0 100 125 150 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics P(AV) 0 IG [mA] IG [mA] 80 1000 20 40 IF(AV) [A] 0 50 100 150 Tamb [C] (c) 2013 IXYS all rights reserved 101 102 ti [s] 0.044 0.039 0.011 0.0001 0.047 0.09 0.18 0.02 0.4 0.12 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0.0 100 Rthi [K/W] Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c